TW200739903A - Semiconductor structure and fabricating method thereof - Google Patents
Semiconductor structure and fabricating method thereofInfo
- Publication number
- TW200739903A TW200739903A TW095112821A TW95112821A TW200739903A TW 200739903 A TW200739903 A TW 200739903A TW 095112821 A TW095112821 A TW 095112821A TW 95112821 A TW95112821 A TW 95112821A TW 200739903 A TW200739903 A TW 200739903A
- Authority
- TW
- Taiwan
- Prior art keywords
- well
- conductivity type
- mos transistor
- semiconductor structure
- substrate
- Prior art date
Links
Abstract
A semiconductor structure is disclosed, including a substrate having therein a first well of a first conductivity type and a second well of a second conductivity type, a first MOS transistor of the first conductivity type and a second MOS transistor of the second conductivity type. The first MOS transistor is disposed on the second well, including a gate structure on the second well and a strained layer of the first conductivity type in an opening in the second well beside the gate structure. The difference between the cell parameter of a portion of the strained layer near the bottom of the opening and that of the substrate is less than the difference between the cell parameter of a portion of the strained layer apart from the bottom of the opening and that of the substrate. The second MOS transistor is disposed on the first well.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW95112821A TWI295852B (en) | 2006-04-11 | 2006-04-11 | Semiconductor structure and fabricating method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW95112821A TWI295852B (en) | 2006-04-11 | 2006-04-11 | Semiconductor structure and fabricating method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200739903A true TW200739903A (en) | 2007-10-16 |
TWI295852B TWI295852B (en) | 2008-04-11 |
Family
ID=45068559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW95112821A TWI295852B (en) | 2006-04-11 | 2006-04-11 | Semiconductor structure and fabricating method thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI295852B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9324863B2 (en) | 2012-05-01 | 2016-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device |
TWI809643B (en) * | 2021-10-26 | 2023-07-21 | 南亞科技股份有限公司 | Semiconductor device structure |
-
2006
- 2006-04-11 TW TW95112821A patent/TWI295852B/en active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9324863B2 (en) | 2012-05-01 | 2016-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device |
US9735271B2 (en) | 2012-05-01 | 2017-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device |
TWI809643B (en) * | 2021-10-26 | 2023-07-21 | 南亞科技股份有限公司 | Semiconductor device structure |
Also Published As
Publication number | Publication date |
---|---|
TWI295852B (en) | 2008-04-11 |
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