TW200739903A - Semiconductor structure and fabricating method thereof - Google Patents

Semiconductor structure and fabricating method thereof

Info

Publication number
TW200739903A
TW200739903A TW095112821A TW95112821A TW200739903A TW 200739903 A TW200739903 A TW 200739903A TW 095112821 A TW095112821 A TW 095112821A TW 95112821 A TW95112821 A TW 95112821A TW 200739903 A TW200739903 A TW 200739903A
Authority
TW
Taiwan
Prior art keywords
well
conductivity type
mos transistor
semiconductor structure
substrate
Prior art date
Application number
TW095112821A
Other languages
Chinese (zh)
Other versions
TWI295852B (en
Inventor
Shyh-Fann Ting
Cheng-Tung Huang
Wen-Han Hung
Li-Shian Jeng
Kun-Hsien Lee
Tzyy Ming Cheng
Jing Chang Wu
Tzermin Shen
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW95112821A priority Critical patent/TWI295852B/en
Publication of TW200739903A publication Critical patent/TW200739903A/en
Application granted granted Critical
Publication of TWI295852B publication Critical patent/TWI295852B/en

Links

Abstract

A semiconductor structure is disclosed, including a substrate having therein a first well of a first conductivity type and a second well of a second conductivity type, a first MOS transistor of the first conductivity type and a second MOS transistor of the second conductivity type. The first MOS transistor is disposed on the second well, including a gate structure on the second well and a strained layer of the first conductivity type in an opening in the second well beside the gate structure. The difference between the cell parameter of a portion of the strained layer near the bottom of the opening and that of the substrate is less than the difference between the cell parameter of a portion of the strained layer apart from the bottom of the opening and that of the substrate. The second MOS transistor is disposed on the first well.
TW95112821A 2006-04-11 2006-04-11 Semiconductor structure and fabricating method thereof TWI295852B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95112821A TWI295852B (en) 2006-04-11 2006-04-11 Semiconductor structure and fabricating method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95112821A TWI295852B (en) 2006-04-11 2006-04-11 Semiconductor structure and fabricating method thereof

Publications (2)

Publication Number Publication Date
TW200739903A true TW200739903A (en) 2007-10-16
TWI295852B TWI295852B (en) 2008-04-11

Family

ID=45068559

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95112821A TWI295852B (en) 2006-04-11 2006-04-11 Semiconductor structure and fabricating method thereof

Country Status (1)

Country Link
TW (1) TWI295852B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324863B2 (en) 2012-05-01 2016-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
TWI809643B (en) * 2021-10-26 2023-07-21 南亞科技股份有限公司 Semiconductor device structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324863B2 (en) 2012-05-01 2016-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US9735271B2 (en) 2012-05-01 2017-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
TWI809643B (en) * 2021-10-26 2023-07-21 南亞科技股份有限公司 Semiconductor device structure

Also Published As

Publication number Publication date
TWI295852B (en) 2008-04-11

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