TW200737694A - Wideband ultra low noise amplifier - Google Patents
Wideband ultra low noise amplifierInfo
- Publication number
- TW200737694A TW200737694A TW096108887A TW96108887A TW200737694A TW 200737694 A TW200737694 A TW 200737694A TW 096108887 A TW096108887 A TW 096108887A TW 96108887 A TW96108887 A TW 96108887A TW 200737694 A TW200737694 A TW 200737694A
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- amplifier
- low noise
- noise amplifier
- ultra low
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
- H03F1/342—Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/151—A source follower being used in a feedback circuit of an amplifier stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/72—Indexing scheme relating to amplifiers the amplifier stage being a common gate configuration MOSFET
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/377,824 US7378911B2 (en) | 2006-03-16 | 2006-03-16 | Wideband ultra low noise amplifier |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200737694A true TW200737694A (en) | 2007-10-01 |
TWI346448B TWI346448B (en) | 2011-08-01 |
Family
ID=38517184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096108887A TWI346448B (en) | 2006-03-16 | 2007-03-15 | Wideband ultra low noise amplifier |
Country Status (3)
Country | Link |
---|---|
US (1) | US7378911B2 (zh) |
TW (1) | TWI346448B (zh) |
WO (1) | WO2007109498A2 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100988460B1 (ko) * | 2008-09-05 | 2010-10-20 | 한국전자통신연구원 | 광대역 저잡음 증폭기 |
US8410856B2 (en) | 2010-12-17 | 2013-04-02 | Industrial Technology Research Institute | Method and apparatus for canceling balun amplifier noise |
CN105515537B (zh) * | 2014-09-25 | 2020-12-29 | 中兴通讯股份有限公司 | 一种多频可调谐低噪声放大器及其多频调谐实现方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3824556C2 (de) * | 1988-07-20 | 1994-01-27 | Telefunken Microelectron | Symmetrische Eingangsschaltung für Hochfrequenzverstärker |
US5465072A (en) * | 1994-08-05 | 1995-11-07 | Linear Technology Corporation | Tunable operational transcondunctance amplifier having high linearity |
US6366171B1 (en) * | 2000-04-06 | 2002-04-02 | Texas Instruments Incorporated | Single-to-differential low noise amplifier |
-
2006
- 2006-03-16 US US11/377,824 patent/US7378911B2/en active Active
-
2007
- 2007-03-15 TW TW096108887A patent/TWI346448B/zh not_active IP Right Cessation
- 2007-03-15 WO PCT/US2007/064052 patent/WO2007109498A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US7378911B2 (en) | 2008-05-27 |
US20070216486A1 (en) | 2007-09-20 |
TWI346448B (en) | 2011-08-01 |
WO2007109498A3 (en) | 2008-10-30 |
WO2007109498A2 (en) | 2007-09-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |