TW200723473A - Semiconductor device integrated with heat sink and method of fabricating the same - Google Patents

Semiconductor device integrated with heat sink and method of fabricating the same

Info

Publication number
TW200723473A
TW200723473A TW094143879A TW94143879A TW200723473A TW 200723473 A TW200723473 A TW 200723473A TW 094143879 A TW094143879 A TW 094143879A TW 94143879 A TW94143879 A TW 94143879A TW 200723473 A TW200723473 A TW 200723473A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
fabricating
same
heat sink
device integrated
Prior art date
Application number
TW094143879A
Other languages
English (en)
Other versions
TWI303473B (en
Inventor
Kuo-Hsin Huang
Original Assignee
High Power Optoelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by High Power Optoelectronics Inc filed Critical High Power Optoelectronics Inc
Priority to TW094143879A priority Critical patent/TWI303473B/zh
Priority to US11/636,522 priority patent/US7619259B2/en
Priority to KR1020060125862A priority patent/KR20070062439A/ko
Priority to JP2006333332A priority patent/JP2007165895A/ja
Publication of TW200723473A publication Critical patent/TW200723473A/zh
Application granted granted Critical
Publication of TWI303473B publication Critical patent/TWI303473B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
TW094143879A 2005-12-12 2005-12-12 Semiconductor device integrated with heat sink and method of fabricating the same TWI303473B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW094143879A TWI303473B (en) 2005-12-12 2005-12-12 Semiconductor device integrated with heat sink and method of fabricating the same
US11/636,522 US7619259B2 (en) 2005-12-12 2006-12-11 Semiconductor device integrated with heat sink and method of fabricating the same
KR1020060125862A KR20070062439A (ko) 2005-12-12 2006-12-11 가열 싱크와 함께 통합된 반도체 장치 및 그 제조 방법
JP2006333332A JP2007165895A (ja) 2005-12-12 2006-12-11 ヒートシンク一体型半導体デバイスおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094143879A TWI303473B (en) 2005-12-12 2005-12-12 Semiconductor device integrated with heat sink and method of fabricating the same

Publications (2)

Publication Number Publication Date
TW200723473A true TW200723473A (en) 2007-06-16
TWI303473B TWI303473B (en) 2008-11-21

Family

ID=38138394

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094143879A TWI303473B (en) 2005-12-12 2005-12-12 Semiconductor device integrated with heat sink and method of fabricating the same

Country Status (4)

Country Link
US (1) US7619259B2 (zh)
JP (1) JP2007165895A (zh)
KR (1) KR20070062439A (zh)
TW (1) TWI303473B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014518450A (ja) * 2011-06-17 2014-07-28 アイピージー フォトニクス コーポレーション 半導体デバイスのためのサブマウントを有する半導体ユニット
US10373931B2 (en) * 2016-11-29 2019-08-06 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package structure and method of manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW251388B (en) 1992-09-22 1995-07-11 yuan-fa Zhu Process of paste-type LED dice
US5914973A (en) * 1997-02-10 1999-06-22 Motorola, Inc. Vertical cavity surface emitting laser for high power operation and method of fabrication
KR20030026090A (ko) * 2001-09-24 2003-03-31 주식회사 옵토웨이퍼테크 반도체 발광 칩 및 그의 제조방법과 반도체 발광소자 및그의 제조방법
JP3882712B2 (ja) * 2002-08-09 2007-02-21 住友電気工業株式会社 サブマウントおよび半導体装置
KR20040020240A (ko) * 2002-08-30 2004-03-09 엘지이노텍 주식회사 발광다이오드 램프 및 그 제조방법
JP2004119515A (ja) * 2002-09-24 2004-04-15 Neo Led Technology Co Ltd 高い放熱性を有する発光ダイオード表示モジュール及びその基板
JP2004296796A (ja) * 2003-03-27 2004-10-21 Shin Etsu Handotai Co Ltd 発光素子および発光素子の製造方法
TWI220577B (en) * 2003-07-25 2004-08-21 Epistar Corp Light emitting device having composite substrate

Also Published As

Publication number Publication date
US20070131952A1 (en) 2007-06-14
JP2007165895A (ja) 2007-06-28
TWI303473B (en) 2008-11-21
US7619259B2 (en) 2009-11-17
KR20070062439A (ko) 2007-06-15

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees