TW200722365A - Mems diaphragm structure and its forming method - Google Patents

Mems diaphragm structure and its forming method

Info

Publication number
TW200722365A
TW200722365A TW095130670A TW95130670A TW200722365A TW 200722365 A TW200722365 A TW 200722365A TW 095130670 A TW095130670 A TW 095130670A TW 95130670 A TW95130670 A TW 95130670A TW 200722365 A TW200722365 A TW 200722365A
Authority
TW
Taiwan
Prior art keywords
forming method
diaphragm structure
mems diaphragm
diaphragm
hinge
Prior art date
Application number
TW095130670A
Other languages
English (en)
Inventor
Yuichi Miyoshi
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of TW200722365A publication Critical patent/TW200722365A/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Signal Processing (AREA)
  • Mechanical Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Diaphragms And Bellows (AREA)
  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
TW095130670A 2005-12-14 2006-08-21 Mems diaphragm structure and its forming method TW200722365A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005360558 2005-12-14

Publications (1)

Publication Number Publication Date
TW200722365A true TW200722365A (en) 2007-06-16

Family

ID=38162681

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095130670A TW200722365A (en) 2005-12-14 2006-08-21 Mems diaphragm structure and its forming method

Country Status (4)

Country Link
US (1) US20090116675A1 (zh)
JP (1) JPWO2007069365A1 (zh)
TW (1) TW200722365A (zh)
WO (1) WO2007069365A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102826502A (zh) * 2011-06-16 2012-12-19 英飞凌科技股份有限公司 半导体器件及其制造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006055147B4 (de) * 2006-11-03 2011-01-27 Infineon Technologies Ag Schallwandlerstruktur und Verfahren zur Herstellung einer Schallwandlerstruktur
WO2011083159A2 (de) * 2010-01-11 2011-07-14 Elmos Semiconductor Ag Halbleiterbauteil
US8575037B2 (en) * 2010-12-27 2013-11-05 Infineon Technologies Ag Method for fabricating a cavity structure, for fabricating a cavity structure for a semiconductor structure and a semiconductor microphone fabricated by the same
CN103493510B (zh) 2011-02-15 2016-09-14 富士胶卷迪马蒂克斯股份有限公司 使用微圆顶阵列的压电式换能器
US8450213B2 (en) * 2011-04-13 2013-05-28 Fujifilm Corporation Forming a membrane having curved features
US9291638B2 (en) * 2012-01-20 2016-03-22 Mcube, Inc. Substrate curvature compensation methods and apparatus
FI125447B (en) * 2013-06-04 2015-10-15 Murata Manufacturing Co Improved pressure sensor
DE102013213717A1 (de) * 2013-07-12 2015-01-15 Robert Bosch Gmbh MEMS-Bauelement mit einer Mikrofonstruktur und Verfahren zu dessen Herstellung
DE102014217152A1 (de) * 2014-08-28 2016-03-03 Robert Bosch Gmbh MEMS-Bauelement
DE102015213473A1 (de) 2015-07-17 2017-01-19 Robert Bosch Gmbh Herstellungsverfahren für eine mikromechanische Fensterstruktur und entsprechende mikromechanische Fensterstruktur
KR101711444B1 (ko) * 2016-01-15 2017-03-02 (주)글로벌센싱테크놀로지 마이크로폰 및 마이크로폰 제조 방법
GB2552555B (en) * 2016-07-28 2019-11-20 Cirrus Logic Int Semiconductor Ltd MEMS device and process
CN107799386B (zh) 2016-09-06 2020-04-28 中芯国际集成电路制造(北京)有限公司 半导体装置及其制造方法
GB2565375A (en) * 2017-08-11 2019-02-13 Cirrus Logic Int Semiconductor Ltd MEMS devices and processes

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5870482A (en) * 1997-02-25 1999-02-09 Knowles Electronics, Inc. Miniature silicon condenser microphone
US6168906B1 (en) * 1998-05-26 2001-01-02 The Charles Stark Draper Laboratory, Inc. Micromachined membrane with locally compliant and stiff regions and method of making same
JP3611779B2 (ja) * 1999-12-09 2005-01-19 シャープ株式会社 電気信号−音響信号変換器及びその製造方法並びに電気信号−音響変換装置
US20020118850A1 (en) * 2000-08-02 2002-08-29 Yeh Jer-Liang (Andrew) Micromachine directional microphone and associated method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102826502A (zh) * 2011-06-16 2012-12-19 英飞凌科技股份有限公司 半导体器件及其制造方法
US8975107B2 (en) 2011-06-16 2015-03-10 Infineon Techologies Ag Method of manufacturing a semiconductor device comprising a membrane over a substrate by forming a plurality of features using local oxidation regions
CN106829846A (zh) * 2011-06-16 2017-06-13 英飞凌科技股份有限公司 半导体器件及其制造方法
US10405118B2 (en) 2011-06-16 2019-09-03 Infineon Technologies Ag Semiconductor devices having a membrane layer with smooth stress-relieving corrugations and methods of fabrication thereof
CN106829846B (zh) * 2011-06-16 2020-04-14 英飞凌科技股份有限公司 半导体器件及其制造方法

Also Published As

Publication number Publication date
JPWO2007069365A1 (ja) 2009-05-21
US20090116675A1 (en) 2009-05-07
WO2007069365A1 (ja) 2007-06-21

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