TW200707777A - Detector arrangement and method to determine spectral components in a radiation incident on a detector arrangement - Google Patents

Detector arrangement and method to determine spectral components in a radiation incident on a detector arrangement

Info

Publication number
TW200707777A
TW200707777A TW095118748A TW95118748A TW200707777A TW 200707777 A TW200707777 A TW 200707777A TW 095118748 A TW095118748 A TW 095118748A TW 95118748 A TW95118748 A TW 95118748A TW 200707777 A TW200707777 A TW 200707777A
Authority
TW
Taiwan
Prior art keywords
detector
radiation
detector arrangement
arrangement
active area
Prior art date
Application number
TW095118748A
Other languages
Chinese (zh)
Other versions
TWI303106B (en
Inventor
Arndt Jaeger
Peter Stauss
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200707777A publication Critical patent/TW200707777A/en
Application granted granted Critical
Publication of TWI303106B publication Critical patent/TWI303106B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers

Abstract

A detector arrangement (10) with several discrete radiation-detectors (1, 2, 3) is provided, where a first radiation-detector and a second radiation-detector of the detector-arrangement have respectively a semiconductor-body (11, 21, 31) with an active area (12, 22, 32), used to receive radiation and generate signals, and respectively a detector area belonged to each radiation detector. The semiconductor-body, especially the active area, of at least one radiation-detector contains an III-V-semiconductor material and/or the active area of the first radiation-detector is different from the active area of the second radiation-detector in construction. Such a detector-arrangement is especially suitable to detect the radiation in spectral areas of different colors.
TW95118748A 2005-05-30 2006-05-26 Detector arrangement and method to determine spectral components in a radiation incident on a detector arrangement TWI303106B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005024660 2005-05-30
DE102005043918.7A DE102005043918B4 (en) 2005-05-30 2005-09-14 Detector arrangement and method for determining spectral components in a radiation incident on a detector arrangement

Publications (2)

Publication Number Publication Date
TW200707777A true TW200707777A (en) 2007-02-16
TWI303106B TWI303106B (en) 2008-11-11

Family

ID=36636964

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95118748A TWI303106B (en) 2005-05-30 2006-05-26 Detector arrangement and method to determine spectral components in a radiation incident on a detector arrangement

Country Status (3)

Country Link
DE (1) DE102005043918B4 (en)
TW (1) TWI303106B (en)
WO (1) WO2006128407A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI468651B (en) * 2012-03-23 2015-01-11 Oto Photonics Inc Optical measurement system, carrying structure for configuring the same, and optical measurement method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007012115A1 (en) 2006-11-30 2008-06-05 Osram Opto Semiconductors Gmbh radiation detector
DE102008006987A1 (en) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Radiation receiver and method for producing a radiation receiver
DE102008016100A1 (en) * 2008-03-28 2009-10-01 Osram Opto Semiconductors Gmbh Optoelectronic radiation detector and method for producing a plurality of detector elements

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55104725A (en) * 1979-02-05 1980-08-11 Nec Corp Wave-length discrimination type photo-detector
DE2920773A1 (en) * 1979-05-22 1980-12-04 Siemens Ag Opto-electronic sensor circuit - has two separately adjusted photodiodes controlling integrated evaluation loop
JPS59227171A (en) * 1983-06-08 1984-12-20 Oki Electric Ind Co Ltd Color sensor
US4758734A (en) * 1984-03-13 1988-07-19 Nec Corporation High resolution image sensor array using amorphous photo-diodes
JPS6124271A (en) * 1984-07-13 1986-02-01 Nec Corp Image sensor
JPH04280678A (en) * 1991-03-08 1992-10-06 Nec Corp Solid-state image pickly element
GB2277405A (en) * 1993-04-22 1994-10-26 Sharp Kk Semiconductor colour display or detector array
US6407439B1 (en) * 1999-08-19 2002-06-18 Epitaxial Technologies, Llc Programmable multi-wavelength detector array
GB2381950A (en) * 2001-11-06 2003-05-14 Denselight Semiconductors Pte Field effect based photodetector array responsivity control

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI468651B (en) * 2012-03-23 2015-01-11 Oto Photonics Inc Optical measurement system, carrying structure for configuring the same, and optical measurement method

Also Published As

Publication number Publication date
DE102005043918B4 (en) 2014-12-04
WO2006128407A1 (en) 2006-12-07
TWI303106B (en) 2008-11-11
DE102005043918A1 (en) 2006-12-07

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