TW200703664A - Organic thin film transistor - Google Patents

Organic thin film transistor

Info

Publication number
TW200703664A
TW200703664A TW095118970A TW95118970A TW200703664A TW 200703664 A TW200703664 A TW 200703664A TW 095118970 A TW095118970 A TW 095118970A TW 95118970 A TW95118970 A TW 95118970A TW 200703664 A TW200703664 A TW 200703664A
Authority
TW
Taiwan
Prior art keywords
thin film
organic thin
insulation film
film transistor
gate
Prior art date
Application number
TW095118970A
Other languages
English (en)
Inventor
Mamoru Baba
Rong-Bin Ye
Takeyoshi Katoh
Original Assignee
Nat University Iwate Univ Inc
Zeon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat University Iwate Univ Inc, Zeon Corp filed Critical Nat University Iwate Univ Inc
Publication of TW200703664A publication Critical patent/TW200703664A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
TW095118970A 2005-05-31 2006-05-29 Organic thin film transistor TW200703664A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005160294 2005-05-31

Publications (1)

Publication Number Publication Date
TW200703664A true TW200703664A (en) 2007-01-16

Family

ID=37481647

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095118970A TW200703664A (en) 2005-05-31 2006-05-29 Organic thin film transistor

Country Status (3)

Country Link
JP (1) JPWO2006129718A1 (zh)
TW (1) TW200703664A (zh)
WO (1) WO2006129718A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI470697B (zh) * 2009-04-17 2015-01-21 Sony Corp 薄膜電晶體及其製造方法
TWI681460B (zh) * 2014-10-31 2020-01-01 日商Ｊｓｒ股份有限公司 使用親撥材料的薄膜電晶體的製造方法、金氧半導體場效電晶體及其製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235581A (ja) * 2007-03-20 2008-10-02 National Institute Of Advanced Industrial & Technology 有機薄膜トランジスタ及びその製造方法
JP2008244362A (ja) 2007-03-28 2008-10-09 Seiko Epson Corp 半導体装置の製造方法、半導体装置、半導体回路、電気光学装置および電子機器
JP2009200315A (ja) * 2008-02-22 2009-09-03 Hitachi Ltd 半導体装置の製造方法
JP2015509660A (ja) * 2012-02-15 2015-03-30 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 有機電子デバイスのための平坦化層
WO2017198587A1 (en) * 2016-05-18 2017-11-23 Merck Patent Gmbh Organic dielectric layer and organic electronic device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0987719A4 (en) * 1997-06-06 2005-06-29 Nippon Zeon Co INSULATION OF CYCLOOLEFIN POLYMER
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
EP1459392B1 (en) * 2001-12-19 2011-09-21 Merck Patent GmbH Organic field effect transistor with an organic dielectric
JP2004288859A (ja) * 2003-03-20 2004-10-14 Fuji Photo Film Co Ltd 電界効果型トランジスタ及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI470697B (zh) * 2009-04-17 2015-01-21 Sony Corp 薄膜電晶體及其製造方法
TWI681460B (zh) * 2014-10-31 2020-01-01 日商Ｊｓｒ股份有限公司 使用親撥材料的薄膜電晶體的製造方法、金氧半導體場效電晶體及其製造方法

Also Published As

Publication number Publication date
JPWO2006129718A1 (ja) 2009-01-08
WO2006129718A1 (ja) 2006-12-07

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