TW200703489A - Temperature controller, temperature control method and temperature control program for mounting stand, and processor - Google Patents

Temperature controller, temperature control method and temperature control program for mounting stand, and processor

Info

Publication number
TW200703489A
TW200703489A TW095111616A TW95111616A TW200703489A TW 200703489 A TW200703489 A TW 200703489A TW 095111616 A TW095111616 A TW 095111616A TW 95111616 A TW95111616 A TW 95111616A TW 200703489 A TW200703489 A TW 200703489A
Authority
TW
Taiwan
Prior art keywords
mounting stand
temperature control
temperature
controller
processor
Prior art date
Application number
TW095111616A
Other languages
English (en)
Other versions
TWI440079B (zh
Inventor
Masahide Iwasaki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200703489A publication Critical patent/TW200703489A/zh
Application granted granted Critical
Publication of TWI440079B publication Critical patent/TWI440079B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Control Of Temperature (AREA)
TW095111616A 2005-03-31 2006-03-31 Temperature control method and processing device of the temperature control device and the stage of the stage and the temperature control program of the stage TWI440079B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005101767A JP4551256B2 (ja) 2005-03-31 2005-03-31 載置台の温度制御装置及び載置台の温度制御方法及び処理装置及び載置台温度制御プログラム

Publications (2)

Publication Number Publication Date
TW200703489A true TW200703489A (en) 2007-01-16
TWI440079B TWI440079B (zh) 2014-06-01

Family

ID=37030599

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111616A TWI440079B (zh) 2005-03-31 2006-03-31 Temperature control method and processing device of the temperature control device and the stage of the stage and the temperature control program of the stage

Country Status (4)

Country Link
JP (1) JP4551256B2 (zh)
KR (1) KR100905897B1 (zh)
CN (1) CN1841654B (zh)
TW (1) TWI440079B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI819089B (zh) * 2018-09-07 2023-10-21 日商東京威力科創股份有限公司 溫度調節系統

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CN100361288C (zh) * 2005-12-07 2008-01-09 北京北方微电子基地设备工艺研究中心有限责任公司 控制静电卡盘温度系统
US7582491B2 (en) 2006-10-27 2009-09-01 Tokyo Electron Limited Method for diagnosing electrostatic chuck, vacuum processing apparatus, and storage medium
JP5003102B2 (ja) * 2006-10-27 2012-08-15 東京エレクトロン株式会社 静電チャックの診断方法、真空処理装置及び記憶媒体
JP5042661B2 (ja) * 2007-02-15 2012-10-03 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
JP4917981B2 (ja) * 2007-07-10 2012-04-18 東京エレクトロン株式会社 検査方法及び検査方法を記録したプログラム記録媒体
KR100927391B1 (ko) * 2007-10-17 2009-11-19 유니셈(주) 반도체 공정설비용 칠러 장치 및 그 제어방법
JP2009111301A (ja) * 2007-11-01 2009-05-21 Hitachi High-Technologies Corp プラズマ処理装置
JP5301812B2 (ja) * 2007-11-14 2013-09-25 東京エレクトロン株式会社 プラズマ処理装置
KR101006252B1 (ko) * 2008-05-19 2011-01-06 주식회사 동부하이텍 칠러를 이용한 플래튼 온도조절 시스템
US8596336B2 (en) * 2008-06-03 2013-12-03 Applied Materials, Inc. Substrate support temperature control
KR100890961B1 (ko) * 2008-07-08 2009-03-27 (주)피티씨 소비전력절감을 위한 칠러 장치의 하이브리드 온도제어방법
WO2010004620A1 (ja) * 2008-07-08 2010-01-14 東京エレクトロン株式会社 窒化膜除去装置及び窒化膜除去方法
CN101373731B (zh) * 2008-10-21 2013-02-27 北京北方微电子基地设备工艺研究中心有限责任公司 静电卡盘装置及其温度控制方法
KR100884319B1 (ko) * 2008-12-03 2009-02-18 (주)피티씨 소비전력절감을 위한 칠러 장치
KR100906629B1 (ko) * 2008-12-29 2009-07-10 (주)테키스트 온도 조절 장치
JP5641709B2 (ja) * 2009-04-23 2014-12-17 キヤノン株式会社 デバイス製造装置およびデバイス製造方法
US9070726B2 (en) 2009-11-02 2015-06-30 Ligadp Co., Ltd. Temperature control method of chemical vapor deposition device
EP2498277A4 (en) * 2009-11-02 2013-03-20 Lig Adp Co Ltd CVD DEVICE AND TEMPERATURE CONTROL PROCEDURE FOR A CVD DEVICE
JP5643062B2 (ja) * 2009-11-24 2014-12-17 東京エレクトロン株式会社 プラズマ処理装置
KR101108337B1 (ko) * 2009-12-31 2012-01-25 주식회사 디엠에스 2단의 냉매 유로를 포함하는 정전척의 온도제어장치
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JP5762841B2 (ja) 2011-06-21 2015-08-12 東京エレクトロン株式会社 半導体製造装置
JP5822578B2 (ja) * 2011-07-20 2015-11-24 東京エレクトロン株式会社 載置台温度制御装置及び基板処理装置
CN102509714B (zh) * 2011-11-18 2014-08-27 中微半导体设备(上海)有限公司 快速控制静电吸盘温度的装置及方法
JP5863582B2 (ja) 2012-07-02 2016-02-16 東京エレクトロン株式会社 プラズマ処理装置、及び温度制御方法
KR101335435B1 (ko) * 2012-09-25 2013-11-29 유니셈(주) 반도체 제조설비용 냉각장치
TWI683382B (zh) * 2013-03-15 2020-01-21 應用材料股份有限公司 具有光學測量的旋轉氣體分配組件
CN104681380B (zh) * 2013-11-29 2017-07-07 中微半导体设备(上海)有限公司 一种静电卡盘及其等离子体处理室
CN103762188B (zh) * 2014-01-02 2016-06-15 同济大学 一种半导体长膜工艺中静电卡盘及晶片温度的辨识方法
JP6018606B2 (ja) 2014-06-27 2016-11-02 東京エレクトロン株式会社 温度制御可能なステージを含むシステム、半導体製造装置及びステージの温度制御方法
KR101634452B1 (ko) * 2014-10-24 2016-06-29 세메스 주식회사 프로브 카드를 이용한 웨이퍼 검사용 척 구조물
US10658160B2 (en) 2014-11-12 2020-05-19 Tokyo Electron Limited Stage and substrate processing apparatus
KR101681493B1 (ko) * 2015-03-11 2016-12-05 (주)티티에스 서셉터 및 서셉터의 온도 가변 장치
JP6570894B2 (ja) * 2015-06-24 2019-09-04 東京エレクトロン株式会社 温度制御方法
JP6651408B2 (ja) * 2016-04-28 2020-02-19 光洋サーモシステム株式会社 熱処理装置
JP6837202B2 (ja) * 2017-01-23 2021-03-03 パナソニックＩｐマネジメント株式会社 基材加熱装置および方法および電子デバイスの製造方法
JP6820206B2 (ja) * 2017-01-24 2021-01-27 東京エレクトロン株式会社 被加工物を処理する方法
CN106653661B (zh) * 2017-02-28 2020-06-09 北京北方华创微电子装备有限公司 一种热处理设备工艺门冷却系统及冷却方法
CN106814769B (zh) * 2017-03-27 2018-08-10 成都深冷科技有限公司 一种高低温循环控制系统及高低温快速控制方法
CN110462812A (zh) * 2017-03-31 2019-11-15 朗姆研究公司 具有灵活的晶片温度控制的静电卡盘
CN107436069A (zh) * 2017-04-18 2017-12-05 迪弗斯科技股份有限公司 静电冷库系统以及静电冷冻、解冻方法
JP7101023B2 (ja) * 2018-04-03 2022-07-14 東京エレクトロン株式会社 温調方法
JP7195060B2 (ja) * 2018-05-17 2022-12-23 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7042158B2 (ja) * 2018-05-23 2022-03-25 東京エレクトロン株式会社 検査装置及び温度制御方法
JP7175114B2 (ja) 2018-07-19 2022-11-18 東京エレクトロン株式会社 載置台及び電極部材
JP7129877B2 (ja) * 2018-10-15 2022-09-02 東京エレクトロン株式会社 温度制御システム及び温度制御方法
CN110544663A (zh) * 2018-10-31 2019-12-06 北京北方华创微电子装备有限公司 静电吸附卡盘的循环液系统
CN109972122B (zh) * 2019-03-28 2022-04-19 惠科股份有限公司 一种用于显示面板的物料派送控制方法及系统
CN112216585B (zh) * 2019-07-11 2022-12-30 中微半导体设备(上海)股份有限公司 一种等离子体处理器及基座温度控制方法
JP7394556B2 (ja) * 2019-08-09 2023-12-08 東京エレクトロン株式会社 載置台及び基板処理装置
JP7365815B2 (ja) 2019-08-09 2023-10-20 東京エレクトロン株式会社 載置台及び基板処理装置
JP7330017B2 (ja) * 2019-08-22 2023-08-21 東京エレクトロン株式会社 熱媒体巡回システム及び熱媒体巡回システムの制御方法
CN112951695B (zh) * 2019-11-26 2023-09-29 中微半导体设备(上海)股份有限公司 冷却管组件、冷却装置和等离子体处理设备
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CN112501589A (zh) * 2020-11-06 2021-03-16 北京印刷学院 一种原子层沉积装置
CN114300386A (zh) * 2021-12-17 2022-04-08 北京北方华创微电子装备有限公司 一种反应腔室尾气压力控制装置及半导体工艺设备
CN114540800B (zh) * 2022-02-24 2023-09-12 季华实验室 衬底预热系统、方法、电子设备、存储介质及外延设备
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JP2000216140A (ja) * 1999-01-20 2000-08-04 Hitachi Ltd ウエハステ―ジおよびウエハ処理装置
JP3817414B2 (ja) * 2000-08-23 2006-09-06 株式会社日立製作所 試料台ユニットおよびプラズマ処理装置
KR20040059262A (ko) * 2002-12-28 2004-07-05 동부전자 주식회사 다중 채널 웨이퍼 냉각 장치 및 그 방법
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JP4551256B2 (ja) 2005-03-31 2010-09-22 東京エレクトロン株式会社 載置台の温度制御装置及び載置台の温度制御方法及び処理装置及び載置台温度制御プログラム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI819089B (zh) * 2018-09-07 2023-10-21 日商東京威力科創股份有限公司 溫度調節系統

Also Published As

Publication number Publication date
CN1841654A (zh) 2006-10-04
JP2006286733A (ja) 2006-10-19
KR100905897B1 (ko) 2009-07-02
TWI440079B (zh) 2014-06-01
KR20060106736A (ko) 2006-10-12
CN1841654B (zh) 2010-10-20
JP4551256B2 (ja) 2010-09-22

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