TW200701307A - Method of manufacturing self-aligned contact opening and semiconductor device - Google Patents
Method of manufacturing self-aligned contact opening and semiconductor deviceInfo
- Publication number
- TW200701307A TW200701307A TW094120134A TW94120134A TW200701307A TW 200701307 A TW200701307 A TW 200701307A TW 094120134 A TW094120134 A TW 094120134A TW 94120134 A TW94120134 A TW 94120134A TW 200701307 A TW200701307 A TW 200701307A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- contact opening
- aligned contact
- substrate
- manufacturing self
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 125000006850 spacer group Chemical group 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094120134A TWI301997B (en) | 2005-06-17 | 2005-06-17 | Method of manufacturing self-aligned contact opening |
US11/306,095 US20060284311A1 (en) | 2005-06-17 | 2005-12-15 | Method of manufacturing self-aligned contact openings and semiconductor device |
US11/853,025 US7429527B2 (en) | 2005-06-17 | 2007-09-11 | Method of manufacturing self-aligned contact openings |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094120134A TWI301997B (en) | 2005-06-17 | 2005-06-17 | Method of manufacturing self-aligned contact opening |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200701307A true TW200701307A (en) | 2007-01-01 |
TWI301997B TWI301997B (en) | 2008-10-11 |
Family
ID=37572603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094120134A TWI301997B (en) | 2005-06-17 | 2005-06-17 | Method of manufacturing self-aligned contact opening |
Country Status (2)
Country | Link |
---|---|
US (2) | US20060284311A1 (zh) |
TW (1) | TWI301997B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080230906A1 (en) * | 2007-03-22 | 2008-09-25 | Keith Kwong Hon Wong | Contact structure having dielectric spacer and method |
US9324830B2 (en) | 2014-03-27 | 2016-04-26 | International Business Machines Corporation | Self-aligned contact process enabled by low temperature |
CN109524295B (zh) * | 2017-09-20 | 2023-12-08 | 长鑫存储技术有限公司 | 半导体器件及其形成方法、存储器 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200623312A (en) * | 2004-12-21 | 2006-07-01 | Powerchip Semiconductor Corp | Method for forming contact opening and method for fabricating semiconductor device |
-
2005
- 2005-06-17 TW TW094120134A patent/TWI301997B/zh active
- 2005-12-15 US US11/306,095 patent/US20060284311A1/en not_active Abandoned
-
2007
- 2007-09-11 US US11/853,025 patent/US7429527B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI301997B (en) | 2008-10-11 |
US7429527B2 (en) | 2008-09-30 |
US20060284311A1 (en) | 2006-12-21 |
US20080003812A1 (en) | 2008-01-03 |
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