TW200634929A - Methods for electrochemical deposition (ECD) and for fabrication integrated circuit devices on a semiconductor substrate with damascene structures and defect-free ECD metal layer on the semiconductor wafer - Google Patents

Methods for electrochemical deposition (ECD) and for fabrication integrated circuit devices on a semiconductor substrate with damascene structures and defect-free ECD metal layer on the semiconductor wafer

Info

Publication number
TW200634929A
TW200634929A TW094142339A TW94142339A TW200634929A TW 200634929 A TW200634929 A TW 200634929A TW 094142339 A TW094142339 A TW 094142339A TW 94142339 A TW94142339 A TW 94142339A TW 200634929 A TW200634929 A TW 200634929A
Authority
TW
Taiwan
Prior art keywords
ecd
electrochemical deposition
defect
methods
integrated circuit
Prior art date
Application number
TW094142339A
Other languages
Chinese (zh)
Other versions
TWI281211B (en
Inventor
Hsi-Kuei Cheng
Hsien-Ping Feng
Ming-Yuan Cheng
Jung-Chih Tsao
Shih-Chi Lin
Ray Chuang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200634929A publication Critical patent/TW200634929A/en
Application granted granted Critical
Publication of TWI281211B publication Critical patent/TWI281211B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/10Agitating of electrolytes; Moving of racks
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/04Electroplating with moving electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76843Barrier, adhesion or liner layers formed in openings in a dielectric
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A method for filling a structure using electrochemical deposition includes a barrier layer and a seed layer being deposited on one or more surfaces of the structure. Metal is electrochemically deposited to fill the structure in an electrochemical plating cell, wherein the electroplating surface of the substrate is tilted and rotated during electrochemical deposition.
TW094142339A 2005-03-29 2005-12-01 Methods for electrochemical deposition (ECD) and for fabrication integrated circuit devices on a semiconductor substrate with damascene structures and defect-free ECD metal layer on the semiconductor wafer TWI281211B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/092,594 US20060219566A1 (en) 2005-03-29 2005-03-29 Method for fabricating metal layer

Publications (2)

Publication Number Publication Date
TW200634929A true TW200634929A (en) 2006-10-01
TWI281211B TWI281211B (en) 2007-05-11

Family

ID=37069005

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094142339A TWI281211B (en) 2005-03-29 2005-12-01 Methods for electrochemical deposition (ECD) and for fabrication integrated circuit devices on a semiconductor substrate with damascene structures and defect-free ECD metal layer on the semiconductor wafer

Country Status (2)

Country Link
US (1) US20060219566A1 (en)
TW (1) TWI281211B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112853441A (en) * 2021-01-08 2021-05-28 上海戴丰科技有限公司 Wafer horizontal electroplating device and cathode electroplating solution jet flow method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI383071B (en) * 2008-10-30 2013-01-21 All Ring Tech Co Ltd Electroplating apparatus for chips
TWI410531B (en) * 2010-05-07 2013-10-01 Taiwan Semiconductor Mfg Vertical plating equipment and plating method thereof
CN110565134A (en) * 2019-10-09 2019-12-13 深圳华络电子有限公司 method for preparing electrode of inductance device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2491925A (en) * 1944-09-16 1949-12-20 Lazaro Anton Apparatus for electroplating
US2446476A (en) * 1944-12-09 1948-08-03 William C Huebner Apparatus for coating cylindrical surfaces
US6391166B1 (en) * 1998-02-12 2002-05-21 Acm Research, Inc. Plating apparatus and method
US6402923B1 (en) * 2000-03-27 2002-06-11 Novellus Systems Inc Method and apparatus for uniform electroplating of integrated circuits using a variable field shaping element
US6258220B1 (en) * 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
US6582578B1 (en) * 1999-04-08 2003-06-24 Applied Materials, Inc. Method and associated apparatus for tilting a substrate upon entry for metal deposition
US6399479B1 (en) * 1999-08-30 2002-06-04 Applied Materials, Inc. Processes to improve electroplating fill
US6610189B2 (en) * 2001-01-03 2003-08-26 Applied Materials, Inc. Method and associated apparatus to mechanically enhance the deposition of a metal film within a feature
US6551487B1 (en) * 2001-05-31 2003-04-22 Novellus Systems, Inc. Methods and apparatus for controlled-angle wafer immersion
JP3495033B1 (en) * 2002-09-19 2004-02-09 東京エレクトロン株式会社 Electroless plating apparatus and electroless plating method
US20050164499A1 (en) * 2002-09-27 2005-07-28 Tokyo Electron Limited Electroless plating method and apparatus
JP3485561B1 (en) * 2002-10-07 2004-01-13 東京エレクトロン株式会社 Electroless plating method and electroless plating apparatus
US20070153062A1 (en) * 2005-12-30 2007-07-05 Shie Jin S Monolithic fabrication method and structure of array nozzles on thermal inkjet print head

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112853441A (en) * 2021-01-08 2021-05-28 上海戴丰科技有限公司 Wafer horizontal electroplating device and cathode electroplating solution jet flow method
CN112853441B (en) * 2021-01-08 2022-04-08 上海戴丰科技有限公司 Wafer horizontal electroplating device and cathode electroplating solution jet flow method

Also Published As

Publication number Publication date
US20060219566A1 (en) 2006-10-05
TWI281211B (en) 2007-05-11

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