TW200627512A - Structure with via hole and trench and the fabrication method thereof - Google Patents
Structure with via hole and trench and the fabrication method thereofInfo
- Publication number
- TW200627512A TW200627512A TW094135265A TW94135265A TW200627512A TW 200627512 A TW200627512 A TW 200627512A TW 094135265 A TW094135265 A TW 094135265A TW 94135265 A TW94135265 A TW 94135265A TW 200627512 A TW200627512 A TW 200627512A
- Authority
- TW
- Taiwan
- Prior art keywords
- trench
- via hole
- layer
- fabrication method
- structures
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76865—Selective removal of parts of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/039,043 US7217663B2 (en) | 2005-01-18 | 2005-01-18 | Via hole and trench structures and fabrication methods thereof and dual damascene structures and fabrication methods thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200627512A true TW200627512A (en) | 2006-08-01 |
TWI288430B TWI288430B (en) | 2007-10-11 |
Family
ID=36684505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094135265A TWI288430B (en) | 2005-01-18 | 2005-10-07 | Structure with via hole and trench and the fabrication method thereof |
Country Status (2)
Country | Link |
---|---|
US (2) | US7217663B2 (zh) |
TW (1) | TWI288430B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7727888B2 (en) * | 2005-08-31 | 2010-06-01 | International Business Machines Corporation | Interconnect structure and method for forming the same |
KR100706800B1 (ko) * | 2006-01-02 | 2007-04-12 | 삼성전자주식회사 | 반도체 소자의 금속 배선 형성 방법 |
US7528066B2 (en) * | 2006-03-01 | 2009-05-05 | International Business Machines Corporation | Structure and method for metal integration |
US7435674B2 (en) * | 2006-03-27 | 2008-10-14 | International Business Machines Corporation | Dielectric interconnect structures and methods for forming the same |
KR101252001B1 (ko) * | 2006-06-15 | 2013-04-08 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
US8703605B2 (en) * | 2007-12-18 | 2014-04-22 | Byung Chun Yang | High yield and high throughput method for the manufacture of integrated circuit devices of improved integrity, performance and reliability |
WO2009079657A2 (en) * | 2007-12-18 | 2009-06-25 | Byung Chun Yang | High yield and high throughput method for the manufacture of integrated circuit devices of improved integrity, performance and reliability |
US8907483B2 (en) * | 2012-10-10 | 2014-12-09 | Globalfoundries Inc. | Semiconductor device having a self-forming barrier layer at via bottom |
US9728501B2 (en) * | 2015-12-21 | 2017-08-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming trenches |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4564113B2 (ja) * | 1998-11-30 | 2010-10-20 | 株式会社東芝 | 微粒子膜形成方法 |
TW400619B (en) * | 1999-03-05 | 2000-08-01 | United Microelectronics Corp | The manufacture method of dual damascene structure |
US20020089063A1 (en) * | 2001-01-08 | 2002-07-11 | Ahn Kie Y. | Copper dual damascene interconnect technology |
US6878615B2 (en) * | 2001-05-24 | 2005-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to solve via poisoning for porous low-k dielectric |
US7060619B2 (en) * | 2003-03-04 | 2006-06-13 | Infineon Technologies Ag | Reduction of the shear stress in copper via's in organic interlayer dielectric material |
US6893959B2 (en) * | 2003-05-05 | 2005-05-17 | Infineon Technologies Ag | Method to form selective cap layers on metal features with narrow spaces |
US7169698B2 (en) * | 2004-01-14 | 2007-01-30 | International Business Machines Corporation | Sacrificial inorganic polymer intermetal dielectric damascene wire and via liner |
US7068138B2 (en) * | 2004-01-29 | 2006-06-27 | International Business Machines Corporation | High Q factor integrated circuit inductor |
-
2005
- 2005-01-18 US US11/039,043 patent/US7217663B2/en active Active
- 2005-10-07 TW TW094135265A patent/TWI288430B/zh active
-
2007
- 2007-04-04 US US11/732,883 patent/US7436009B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20060160362A1 (en) | 2006-07-20 |
US7436009B2 (en) | 2008-10-14 |
TWI288430B (en) | 2007-10-11 |
US20070184669A1 (en) | 2007-08-09 |
US7217663B2 (en) | 2007-05-15 |
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