TW200606578A - Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit... - Google Patents

Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit...

Info

Publication number
TW200606578A
TW200606578A TW094120756A TW94120756A TW200606578A TW 200606578 A TW200606578 A TW 200606578A TW 094120756 A TW094120756 A TW 094120756A TW 94120756 A TW94120756 A TW 94120756A TW 200606578 A TW200606578 A TW 200606578A
Authority
TW
Taiwan
Prior art keywords
production method
mask
defect
translucent substrate
mask blank
Prior art date
Application number
TW094120756A
Other languages
English (en)
Other versions
TWI363248B (zh
Inventor
Masaru Tanabe
Masaru Mitsui
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200606578A publication Critical patent/TW200606578A/zh
Application granted granted Critical
Publication of TWI363248B publication Critical patent/TWI363248B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW094120756A 2004-06-22 2005-06-22 Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit... TW200606578A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004183287 2004-06-22

Publications (2)

Publication Number Publication Date
TW200606578A true TW200606578A (en) 2006-02-16
TWI363248B TWI363248B (zh) 2012-05-01

Family

ID=35509858

Family Applications (2)

Application Number Title Priority Date Filing Date
TW100142197A TWI477890B (zh) 2004-06-22 2005-06-22 Grayscale masking, grayscale mask, grayscale masking manufacturing method, manufacturing method of gray scale mask, and manufacturing method of liquid crystal display device
TW094120756A TW200606578A (en) 2004-06-22 2005-06-22 Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit...

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW100142197A TWI477890B (zh) 2004-06-22 2005-06-22 Grayscale masking, grayscale mask, grayscale masking manufacturing method, manufacturing method of gray scale mask, and manufacturing method of liquid crystal display device

Country Status (6)

Country Link
US (2) US7862960B2 (zh)
JP (1) JP5267890B2 (zh)
KR (3) KR101018567B1 (zh)
CN (2) CN101713917B (zh)
TW (2) TWI477890B (zh)
WO (1) WO2005124455A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI575305B (zh) * 2013-08-20 2017-03-21 大日本印刷股份有限公司 遮罩毛胚、相位移遮罩及其製造方法

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JP2007219038A (ja) * 2006-02-15 2007-08-30 Hoya Corp マスクブランク及びフォトマスク
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CN101355123B (zh) * 2007-07-23 2010-12-01 广镓光电股份有限公司 具有低缺陷密度的半导体发光组件及其制造方法
KR101295235B1 (ko) * 2008-08-15 2013-08-12 신에쓰 가가꾸 고교 가부시끼가이샤 그레이톤 마스크 블랭크, 그레이톤 마스크, 및 제품 가공 표지 또는 제품 정보 표지의 형성방법
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JP2013029786A (ja) * 2011-07-29 2013-02-07 Hoya Corp 位相シフトマスクの製造方法及びパターン転写方法
FR2994605B1 (fr) * 2012-08-20 2014-08-22 Commissariat Energie Atomique Procede de fabrication de masques euv minimisant l'impact des defauts de substrat
CN102809839A (zh) * 2012-08-31 2012-12-05 深圳市华星光电技术有限公司 阵列基板的图形修补装置及方法
JP6157832B2 (ja) * 2012-10-12 2017-07-05 Hoya株式会社 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
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FR3002655B1 (fr) * 2013-02-28 2016-05-13 Commissariat Energie Atomique Procede de photolithographie a double masque minimisant l'impact des defauts de substrat
US9735066B2 (en) 2014-01-30 2017-08-15 Fei Company Surface delayering with a programmed manipulator
JP6214019B2 (ja) * 2014-03-07 2017-10-18 株式会社Ｊｏｌｅｄ バンクの補修方法、有機ｅｌ表示装置およびその製造方法
EP2952872A1 (en) * 2014-06-02 2015-12-09 Fei Company Surface delayering with a programmed manipulator
CN104111581A (zh) * 2014-07-09 2014-10-22 京东方科技集团股份有限公司 掩膜板及其制造方法、薄膜晶体管的制造方法
JP5775631B2 (ja) * 2014-08-06 2015-09-09 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP6761255B2 (ja) * 2016-02-15 2020-09-23 関東化学株式会社 エッチング液およびエッチング液により加工されたフォトマスク
JP6302502B2 (ja) * 2016-04-15 2018-03-28 Hoya株式会社 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
US9870612B2 (en) * 2016-06-06 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method for repairing a mask
US11226562B2 (en) * 2018-09-20 2022-01-18 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
CN109557761B (zh) * 2018-12-07 2022-03-08 深圳市华星光电半导体显示技术有限公司 掩膜板制作方法
CN111490065A (zh) * 2019-01-25 2020-08-04 群创光电股份有限公司 显示设备
JP2021057361A (ja) * 2019-09-26 2021-04-08 キオクシア株式会社 欠陥修正方法およびテンプレートの製造方法
CN112526820A (zh) * 2020-12-21 2021-03-19 泉芯集成电路制造(济南)有限公司 光罩缺陷修复方法、光罩制备方法和光罩
CN114184624A (zh) * 2021-11-16 2022-03-15 厦门理工学院 一种透明介质薄层的缺陷检测方法和装置
US20230298932A1 (en) * 2022-03-18 2023-09-21 Nanya Technology Corporation Method for fabricating photomask and method for fabricating semiconductor device with damascene structure

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
TWI575305B (zh) * 2013-08-20 2017-03-21 大日本印刷股份有限公司 遮罩毛胚、相位移遮罩及其製造方法

Also Published As

Publication number Publication date
CN101713917B (zh) 2012-12-12
US7862960B2 (en) 2011-01-04
KR100968697B1 (ko) 2010-07-06
TW201211676A (en) 2012-03-16
WO2005124455A1 (ja) 2005-12-29
US20080107970A1 (en) 2008-05-08
US8039178B2 (en) 2011-10-18
KR20100114551A (ko) 2010-10-25
TWI363248B (zh) 2012-05-01
KR101018567B1 (ko) 2011-03-03
KR20100056576A (ko) 2010-05-27
TWI477890B (zh) 2015-03-21
KR20070041412A (ko) 2007-04-18
JP5267890B2 (ja) 2013-08-21
CN101713917A (zh) 2010-05-26
JP2010256937A (ja) 2010-11-11
CN1839350A (zh) 2006-09-27
KR101022600B1 (ko) 2011-03-16
US20110123912A1 (en) 2011-05-26

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