TW200520055A - Illumination optical system and exposure apparatus - Google Patents

Illumination optical system and exposure apparatus

Info

Publication number
TW200520055A
TW200520055A TW093133867A TW93133867A TW200520055A TW 200520055 A TW200520055 A TW 200520055A TW 093133867 A TW093133867 A TW 093133867A TW 93133867 A TW93133867 A TW 93133867A TW 200520055 A TW200520055 A TW 200520055A
Authority
TW
Taiwan
Prior art keywords
optical system
illumination optical
exposure apparatus
mirror
reflection surface
Prior art date
Application number
TW093133867A
Other languages
English (en)
Other versions
TWI270120B (en
Inventor
Toshihiko Tsuji
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200520055A publication Critical patent/TW200520055A/zh
Application granted granted Critical
Publication of TWI270120B publication Critical patent/TWI270120B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70225Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70075Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/702Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Light Sources And Details Of Projection-Printing Devices (AREA)
  • Microscoopes, Condenser (AREA)
  • Lenses (AREA)
TW093133867A 2003-11-10 2004-11-05 Illumination optical system and exposure apparatus TWI270120B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003380075A JP2005141158A (ja) 2003-11-10 2003-11-10 照明光学系及び露光装置

Publications (2)

Publication Number Publication Date
TW200520055A true TW200520055A (en) 2005-06-16
TWI270120B TWI270120B (en) 2007-01-01

Family

ID=34431393

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093133867A TWI270120B (en) 2003-11-10 2004-11-05 Illumination optical system and exposure apparatus

Country Status (5)

Country Link
US (1) US20050105290A1 (zh)
EP (1) EP1530087A3 (zh)
JP (1) JP2005141158A (zh)
KR (1) KR20050045849A (zh)
TW (1) TWI270120B (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI413852B (zh) * 2006-03-24 2013-11-01 尼康股份有限公司 投影光學系統、曝光裝置以及元件製造方法
TWI417649B (zh) * 2005-12-28 2013-12-01 尼康股份有限公司 十字標記運送裝置、曝光裝置、十字標記運送方法以及十字標記的處理方法
US8698174B2 (en) 2006-04-13 2014-04-15 Epistar Corporation Semiconductor light emitting device
TWI790304B (zh) * 2017-10-26 2023-01-21 德商卡爾蔡司Smt有限公司 修復用於euv裝置之照明系統的方法以及偵測器模組

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005235959A (ja) * 2004-02-18 2005-09-02 Canon Inc 光発生装置及び露光装置
WO2007135587A2 (en) 2006-05-16 2007-11-29 Philips Intellectual Property & Standards Gmbh A method of increasing the conversion efficiency of an euv and/or soft x-ray lamp and a corresponding apparatus
DE102006039655A1 (de) * 2006-08-24 2008-03-20 Carl Zeiss Smt Ag Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage, Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, Verfahren zur Herstellung eines mikrostruktuierten Bauelements mit einer derartigen Projektionsbelichtungsanlage sowie durch dieses Verfahren hergestelltes mikrostrukturiertes Bauelement
JP4989180B2 (ja) 2006-10-13 2012-08-01 キヤノン株式会社 照明光学系および露光装置
JP4986754B2 (ja) 2007-07-27 2012-07-25 キヤノン株式会社 照明光学系及びそれを有する露光装置
JP5241270B2 (ja) * 2008-02-27 2013-07-17 キヤノン株式会社 照明光学系、これを用いた露光装置及びデバイス製造方法
JP5142892B2 (ja) 2008-09-03 2013-02-13 キヤノン株式会社 照明光学系及び露光装置
JP5534910B2 (ja) * 2009-04-23 2014-07-02 ギガフォトン株式会社 極端紫外光源装置
CN107870417B (zh) * 2017-11-08 2020-12-22 北京仿真中心 一种背景辐射可控的红外点源目标模拟器

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5486919A (en) * 1992-04-27 1996-01-23 Canon Kabushiki Kaisha Inspection method and apparatus for inspecting a particle, if any, on a substrate having a pattern
US5861952A (en) * 1992-11-16 1999-01-19 Canon Kabushiki Kaisha Optical inspection method and apparatus including intensity modulation of a light beam and detection of light scattered at an inspection position
JP3211538B2 (ja) * 1994-01-13 2001-09-25 キヤノン株式会社 検査装置及びそれを用いた半導体デバイスの製造方法
JPH07209202A (ja) * 1994-01-21 1995-08-11 Canon Inc 表面状態検査装置、該表面状態検査装置を備える露光装置及び該露光装置を用いてデバイスを製造する方法
JP3183046B2 (ja) * 1994-06-06 2001-07-03 キヤノン株式会社 異物検査装置及びそれを用いた半導体デバイスの製造方法
JPH0815169A (ja) * 1994-06-28 1996-01-19 Canon Inc 異物検査装置及びそれを用いた半導体デバイスの製造 方法
JPH09320952A (ja) * 1996-05-29 1997-12-12 Nikon Corp 露光装置
JP3706691B2 (ja) * 1996-08-26 2005-10-12 キヤノン株式会社 X線縮小投影露光装置及びこれを用いた半導体デバイス製造方法
JP3005203B2 (ja) * 1997-03-24 2000-01-31 キヤノン株式会社 照明装置、露光装置及びデバイス製造方法
US6398374B1 (en) * 1998-12-31 2002-06-04 The Regents Of The University Of California Condenser for ring-field deep ultraviolet and extreme ultraviolet lithography
US6392742B1 (en) * 1999-06-01 2002-05-21 Canon Kabushiki Kaisha Illumination system and projection exposure apparatus
JP3919419B2 (ja) * 2000-03-30 2007-05-23 キヤノン株式会社 照明装置及びそれを有する露光装置
DE10134387A1 (de) * 2001-07-14 2003-01-23 Zeiss Carl Optisches System mit mehreren optischen Elementen
US6919951B2 (en) * 2001-07-27 2005-07-19 Canon Kabushiki Kaisha Illumination system, projection exposure apparatus and device manufacturing method
JPWO2003050857A1 (ja) * 2001-12-12 2005-04-21 株式会社ニコン 反射型照明光学素子、反射型照明光学系、及びduv〜euv光露光装置
JP3564104B2 (ja) * 2002-01-29 2004-09-08 キヤノン株式会社 露光装置及びその制御方法、これを用いたデバイスの製造方法
JP3720788B2 (ja) * 2002-04-15 2005-11-30 キヤノン株式会社 投影露光装置及びデバイス製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417649B (zh) * 2005-12-28 2013-12-01 尼康股份有限公司 十字標記運送裝置、曝光裝置、十字標記運送方法以及十字標記的處理方法
TWI413852B (zh) * 2006-03-24 2013-11-01 尼康股份有限公司 投影光學系統、曝光裝置以及元件製造方法
US8698174B2 (en) 2006-04-13 2014-04-15 Epistar Corporation Semiconductor light emitting device
TWI790304B (zh) * 2017-10-26 2023-01-21 德商卡爾蔡司Smt有限公司 修復用於euv裝置之照明系統的方法以及偵測器模組

Also Published As

Publication number Publication date
EP1530087A3 (en) 2006-01-04
US20050105290A1 (en) 2005-05-19
EP1530087A2 (en) 2005-05-11
KR20050045849A (ko) 2005-05-17
TWI270120B (en) 2007-01-01
JP2005141158A (ja) 2005-06-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees