TW200510986A - Method of forming a reference voltage and structure therefor - Google Patents

Method of forming a reference voltage and structure therefor

Info

Publication number
TW200510986A
TW200510986A TW093109162A TW93109162A TW200510986A TW 200510986 A TW200510986 A TW 200510986A TW 093109162 A TW093109162 A TW 093109162A TW 93109162 A TW93109162 A TW 93109162A TW 200510986 A TW200510986 A TW 200510986A
Authority
TW
Taiwan
Prior art keywords
selectable
bandgap reference
voltage
reference voltage
forming
Prior art date
Application number
TW093109162A
Other languages
Chinese (zh)
Other versions
TWI333602B (en
Inventor
Paolo Migliavacca
Original Assignee
Semiconductor Components Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Components Ind filed Critical Semiconductor Components Ind
Publication of TW200510986A publication Critical patent/TW200510986A/en
Application granted granted Critical
Publication of TWI333602B publication Critical patent/TWI333602B/en

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Abstract

A selectable bandgap reference (11) of a voltage generator (10) is operated at a duty cycle that is less than one hundred per cent. The selectable bandgap reference (11) has at a high current consumption when enabled and a low current consumption when disabled. The output voltage of the selectable bandgap reference (11) is stored on a storage element (13) when the selectable bandgap reference (11) is enabled. A high impedance amplifier (16) receives the stored voltage and generates the reference voltage.
TW093109162A 2003-04-18 2004-04-02 Method of forming a reference voltage and structure therefor TWI333602B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2003/012082 WO2004099892A1 (en) 2003-04-18 2003-04-18 Method of forming a reference voltage and structure therefor

Publications (2)

Publication Number Publication Date
TW200510986A true TW200510986A (en) 2005-03-16
TWI333602B TWI333602B (en) 2010-11-21

Family

ID=33434334

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093109162A TWI333602B (en) 2003-04-18 2004-04-02 Method of forming a reference voltage and structure therefor

Country Status (5)

Country Link
CN (1) CN100492246C (en)
AU (1) AU2003234137A1 (en)
HK (1) HK1081283A1 (en)
TW (1) TWI333602B (en)
WO (1) WO2004099892A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI760023B (en) * 2020-12-22 2022-04-01 新唐科技股份有限公司 Reference voltage circuit

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5068522B2 (en) * 2006-12-08 2012-11-07 株式会社リコー Reference voltage generation circuit
US7764059B2 (en) * 2006-12-20 2010-07-27 Semiconductor Components Industries L.L.C. Voltage reference circuit and method therefor
US9218014B2 (en) * 2012-10-25 2015-12-22 Fairchild Semiconductor Corporation Supply voltage independent bandgap circuit
KR102455877B1 (en) * 2016-02-15 2022-10-21 에스케이하이닉스 주식회사 Voltage generation circuit and integrated circuit including the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4772793A (en) * 1987-10-05 1988-09-20 The United States Of America As Represented By The United States Department Of Energy Dead-time compensation for a logarithmic display rate meter
US5512817A (en) * 1993-12-29 1996-04-30 At&T Corp. Bandgap voltage reference generator
FR2767589B1 (en) * 1997-08-21 2000-07-21 Sgs Thomson Microelectronics “RESET” TYPE SUPPLY VOLTAGE MONITORING DEVICE
US6118266A (en) * 1999-09-09 2000-09-12 Mars Technology, Inc. Low voltage reference with power supply rejection ratio
US6400207B1 (en) * 2001-04-03 2002-06-04 Texas Instruments Incorporated Quick turn-on disable/enable bias control circuit for high speed CMOS opamp
US6535054B1 (en) * 2001-12-20 2003-03-18 National Semiconductor Corporation Band-gap reference circuit with offset cancellation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI760023B (en) * 2020-12-22 2022-04-01 新唐科技股份有限公司 Reference voltage circuit

Also Published As

Publication number Publication date
CN1662863A (en) 2005-08-31
TWI333602B (en) 2010-11-21
WO2004099892A1 (en) 2004-11-18
CN100492246C (en) 2009-05-27
AU2003234137A1 (en) 2004-11-26
HK1081283A1 (en) 2006-05-12

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees