TW200502426A - Deposition apparatus and method - Google Patents

Deposition apparatus and method

Info

Publication number
TW200502426A
TW200502426A TW093114246A TW93114246A TW200502426A TW 200502426 A TW200502426 A TW 200502426A TW 093114246 A TW093114246 A TW 093114246A TW 93114246 A TW93114246 A TW 93114246A TW 200502426 A TW200502426 A TW 200502426A
Authority
TW
Taiwan
Prior art keywords
targets
voltage
alternating voltage
substrate
low energy
Prior art date
Application number
TW093114246A
Other languages
English (en)
Chinese (zh)
Inventor
Pavel N Laptev
Valery V Felmetsger
Original Assignee
Sputtered Films Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sputtered Films Inc filed Critical Sputtered Films Inc
Publication of TW200502426A publication Critical patent/TW200502426A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW093114246A 2003-05-23 2004-05-20 Deposition apparatus and method TW200502426A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/446,005 US7179350B2 (en) 2003-05-23 2003-05-23 Reactive sputtering of silicon nitride films by RF supported DC magnetron

Publications (1)

Publication Number Publication Date
TW200502426A true TW200502426A (en) 2005-01-16

Family

ID=33450968

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093114246A TW200502426A (en) 2003-05-23 2004-05-20 Deposition apparatus and method

Country Status (5)

Country Link
US (1) US7179350B2 (https=)
EP (1) EP1634317A2 (https=)
JP (1) JP5324744B2 (https=)
TW (1) TW200502426A (https=)
WO (1) WO2004107411A2 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7758982B2 (en) * 2005-09-02 2010-07-20 Hitachi Global Storage Technologies Netherlands B.V. SiN overcoat for perpendicular magnetic recording media
US7517437B2 (en) * 2006-03-29 2009-04-14 Applied Materials, Inc. RF powered target for increasing deposition uniformity in sputtering systems
US20080083611A1 (en) * 2006-10-06 2008-04-10 Tegal Corporation High-adhesive backside metallization
US20090246385A1 (en) * 2008-03-25 2009-10-01 Tegal Corporation Control of crystal orientation and stress in sputter deposited thin films
US8808513B2 (en) * 2008-03-25 2014-08-19 Oem Group, Inc Stress adjustment in reactive sputtering
US8482375B2 (en) * 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
GB2473655A (en) * 2009-09-21 2011-03-23 Mantis Deposition Ltd Magnetron sputtering techiques and apparatus
WO2012095961A1 (ja) * 2011-01-12 2012-07-19 日新電機株式会社 プラズマ装置
US20170178878A1 (en) 2015-12-21 2017-06-22 IonQuest LLC Electrically and Magnetically Enhanced Ionized Physical Vapor Deposition Unbalanced Sputtering Source
US11359274B2 (en) 2015-12-21 2022-06-14 IonQuestCorp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US12217949B2 (en) 2015-12-21 2025-02-04 Ionquest Corp. Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
US11823859B2 (en) * 2016-09-09 2023-11-21 Ionquest Corp. Sputtering a layer on a substrate using a high-energy density plasma magnetron
US20210230739A1 (en) * 2020-01-27 2021-07-29 Applied Materials, Inc. Physical Vapor Deposition Apparatus And Methods With Gradient Thickness Target
CN116155231A (zh) * 2023-02-28 2023-05-23 苏州敏声新技术有限公司 一种体声波谐振器及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63230872A (ja) * 1984-05-17 1988-09-27 バリアン・アソシエイツ・インコ−ポレイテツド タ−ゲツト及び磁気的に強められたｒ．ｆ．バイアスを分離する分離制限磁場を有するマグネトロン・スパツタ装置
US4661228A (en) * 1984-05-17 1987-04-28 Varian Associates, Inc. Apparatus and method for manufacturing planarized aluminum films
JPH01116068A (ja) * 1987-10-28 1989-05-09 Hitachi Ltd バイアススパッタ装置
US4810347A (en) 1988-03-21 1989-03-07 Eaton Corporation Penning type cathode for sputter coating
JPH02225662A (ja) * 1989-02-27 1990-09-07 Tokuda Seisakusho Ltd スパッタ装置
DE4127262C1 (en) 1991-08-17 1992-06-04 Forschungsges Elektronenstrahl Sputtering equipment for coating large substrates with (non)ferromagnetic material - consisting of two sub-targets electrically isolated and cooling plates whose gap in between is that in region of pole units
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
DE19848636C2 (de) * 1998-10-22 2001-07-26 Fraunhofer Ges Forschung Verfahren zur Überwachung einer Wechselspannungs-Entladung an einer Doppelelektrode
JP2001003166A (ja) * 1999-04-23 2001-01-09 Nippon Sheet Glass Co Ltd 基体表面に被膜を被覆する方法およびその方法による基体
EP1235947A4 (en) 1999-10-15 2009-04-15 Advanced Energy Ind Inc METHOD AND DEVICE FOR POLARIZING SUBSTRATE IN MULTIPLE ELECTRODE SPUTTERING SYSTEMS
US6824653B2 (en) * 2003-02-21 2004-11-30 Agilent Technologies, Inc Magnetron with controlled DC power

Also Published As

Publication number Publication date
JP5324744B2 (ja) 2013-10-23
US7179350B2 (en) 2007-02-20
US20040231972A1 (en) 2004-11-25
WO2004107411A3 (en) 2005-12-29
WO2004107411A2 (en) 2004-12-09
JP2007501333A (ja) 2007-01-25
EP1634317A2 (en) 2006-03-15

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