TW200425768A - Flexible MENS transducer and manufacturing method thereof, and flexible MENS wireless microphone - Google Patents

Abstract

A flexible wireless MEMS microphone includes a substrate of a flexible polymeric material, a flexible MEMS transducer structure formed on the substrate by PECVD, an antenna printed on the substrate for communicating with an outside source, a wire and interface circuit embedded in the substrate to electrically connect the flexible MEMS transducer and the antenna, a flexible battery layer electrically connected to the substrate for supplying power to the MEMS transducer, and a flexible bluetooth module layer electrically connected to the battery layer. The flexible MEMS transducer includes a flexible substrate, a membrane layer deposited on the substrate, a lower electrode layer formed on the membrane layer, an active layer formed by depositing a piezopolymer on the lower electrode layer, an upper electrode layer formed on the active layer, and a first and a second connecting pad electrically connected to the lower and upper electrode layers, respectively.

Description

200425768

51. [Technical field to which the invention belongs] The present invention relates to a micro-electro-mechanical system structure and a manufacturing method thereof; more particularly, the present invention relates to a flexible micro-electro-mechanical system converter formed on a flexible substrate, and a flexible micro-electro-mechanical system converter formed thereon. Manufacturing method, and a flexible MEMS wireless microphone constituting one of the flexible MEMS converters. 2. Prior Technology ^ ‘According to the needs of very small devices, we will use the semi-conducting system technology of micro-processing technology to integrate micro-devices. The field of micro-electro-mechanical systems (MEMS) is the field of manufacturing and testing tiny sensors or actuators, and the use of electromechanical structures such as micro-cutting technology for semiconductors and special integrated circuit technology. Grade size. The micro-machining technology applied to micro-electromechanics is divided into two categories. The micro-machining category is bulk silicon-based processing using bulk silicon-based etching. The second micro-processing paradigm is to use cut-on deposition-polycrystalline crushing, nitrogen cutting and The oxidized stone thin film is processed with a surface-shaped stone based on a predetermined model for forming a structure. For example, the formation of ultra-small winds manufactured using a micro-electromechanical program is made by a diaphragm converter formed by the body's silicon-based processing technology. , Σ <

~ The team's case must be returned to the group for theft. As shown in the figure, the electromechanical converter includes a nitride film layer to round the substrate; the silicon substrate (Si) wafer has upper and lower electrodes, and the CVD silicon film and a silicon oxide layer of the CVD Program as needed

Page 8 200425768 V. Description of the invention (2) _ High temperature program with a processing temperature of about 780 to 850 X: Therefore, we must not λ use flexible polymer materials other than Shixi wafers as the substrate material at the same time ' With the development of the information and communication industry, the demand for hand-to-hand information terminals has also increased. This increase in demand is due to installation in various fields such as medicine, services, entertainment, military, and this communication. And other information terminal applications. In order to facilitate the use of these information terminals and components, the components should have superior characteristics in terms of mobility and durability; Special: In order to achieve durable systems, we need a flexible system structure; therefore, five functional and other structures The conductive component is integrated on a flexible base: I use a metal thin film or a polymer material as the flexible substrate, i = material is more suitable for electronic systems, and the metal thin film is 50. . two? Low melting point and low melting point, so when the polymer material is more stable, the polymer material is not suitable as: it electrical manufacturing process p skin ten a f fong 忒 substrate such as wafer material, because it should be two or more than the polymerization The temperature of the program material melting point is: The superior performance and the degree of integration are special ... Microcomputers ίΐ: Five "is a combination of methods including a high temperature program of at least 50ot) Material two: Do not use a flexible system The polymer (polymer) material required for the structure is used as the substrate.

) Based on "A traditional micro-electromechanical structure is formed by chemical vapor deposition (CVD is formed by CVD)", and then the etching process is used; however, due to the use of handles, it is necessary to use extremely high temperatures at high temperatures. The helmet method uses a low melting point substrate such as polymer, glass, etc. 200425768 V. Description of the invention (3) To overcome this problem, as shown in Figure 2, one of the traditional square-shaped flexible devices is based on a Silicon micro-electro-mechanical procedures can be produced on a silicon substrate—a sensor device 30, from which the silicon substrate 2 on the back of the silicon substrate f0 is repeatedly deposited—the polymer 11; however, this method has disadvantages: The traditional micro-electromechanical process of a high-temperature process, and Erwa used a polymer process, so the complexity and cost of the overall t 7 v (extra integration) are increased. III. [Content of the Invention] Therefore, in order to solve At least some of the above problems, a feature of the present invention is: the use of plasma enhanced chemical vapor deposition method CV 22: forming a micro-electromechanical converter on the flexible substrate to improve the flexibility Foldable microphone. / 、 '柔Provide one of the features of the present invention. Η η Μ ^ β color search consistent embodiment of the present invention provides a conductive layer deposited on the film layer on the #: the film layer has been clever: by the end electrode sound Shen borrows one of the lower end electrode layers, and deposits a conductive material into an A 1 ± layer by depositing on the lower active layer. One of the first 4f upper end electrode layers is electrically connected to the end electrode layer, and is electrically connected to the lower layer. One of the second connection pads, the gaskets, and the upper electrode is better, the conversion can be φ 6 about 10 nitride nitride oxide or oxidation work, and the coating thickness on the substrate is smaller than the better, The base protective layer. The imine or metal film is formed by a rain molecular (polymer) material such as polyfluorene :: have it; a flexible material substrate, the film deposited on the base '= = convex portion Layer, Borrow: Page 10 200425768

More preferably, the substrate is formed using P E C V D to deposit nitride to a thickness of about 5 / zm. More preferably, the lower electrode layer and the upper electrode layer are selected from the group consisting of (for example, aluminum) and a conductive layer having a thickness of about 0.01 # „1 to 5 // m 〇 物 为其 好的。 The active layer is formed by depositing a piezoelectric element formed by a group including PVDp, PVDF-TrEF, TrEF, polyurea, polyimide, and nylon. Polymer, its thickness is about! = Its length is about 50 // m to looo, so it can have a resonance frequency of up to 100 kHz.; 2

More preferably, the converter may further include an upper protective layer formed by depositing silicon nitride or oxidized silicon with a thickness of about 1 // 111 to 10, the upper and lower electrode layers, and the active layer. More preferably, a metal is used as a flexible conversion layer; a film layer is formed electrically, followed by patterning at an upper end; and connected to the upper layer. The square and conductive paste reinforcement layer of the hair generator are connected to form a picture electrode layer to form a terminal electrode method, which can be used for the first continuous polymerization and another method, including a chemical vapor deposition case. One of the layers includes features such as a spacer, including: depositing a pattern in the phase; the lower end in this order and the lower end being electrically deposited secondly and the second continuous material forming a flexible substrate method of the present invention ( PECVD) connecting a pad to one of the upper electrode layers on the electrode layer above the film layer; before the sacrificial layer, the pad is selected from the group consisting of. The embodiment provides a method of forming a sacrificial layer on the sacrificial layer, depositing a terminal electrode on the sacrificial layer, sequentially depositing an active layer and the active layer, connecting a pad and connecting and removing the sacrificial layer.

Page 11 200425768 V. Description of the invention (5) Nitriding or oxygen cutting to form a lower protective layer. ^ Preferably, in order to form the sacrificial layer, the thickness of Λ s η Λ on the substrate is less than Λ s η Λ and the thickness is less than or equal to 护 护 护 刿 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 # 护The desired configuration is patterned by house etching or dry etching. Preferably, in order to form the film layer, our #pecvd will be nitrided to a sacrificial layer and patterned by dry etching. /, $ 佳 X is to form the active layer ’We rotate a piezoelectric polymer such as PVDF, PVDF_TrEF, TrEF ^, and Mao Fang

: Ethyleneimine and nylon are deposited on the lower electrode T ίο, and they are patterned by clear etching or dry etching. Yun J at the upper end of the force; ΐ: electricity: layer by layer to cover the layer is formed by using PECVD to nitride or oxidize / sink the nitride to a thickness of 10 ... and use wet or dry etching to pattern the deposited layer . More preferably, 'the first-connection pad is formed by patterning a portion where the upper protective layer is connected to the lower electrode layer by wet etching or dry etching; a metal layer or a conductive polymer layer is deposited on the pot And forming a pattern on the deposited layer by wet etching ^ contacting; more preferably, the second connection tab is patterned by wet etching or dry etching to connect the upper protective layer to the upper electrode layer; A metal layer or a conductive polymer layer is deposited thereon; and the deposited layer is patterned using wet or dry etching. In order to provide yet another feature of the present invention, one implementation of the present invention provides a pull-wireless wireless micro-electro-mechanical microphone 'including a flexible polymer material substrate;

200425768 Fifth invention description (6) An inductive micro-electro-mechanical converter structure formed on the substrate by plasma enhanced chemical vapor deposition (pECVD); an antenna printed on the substrate for external trench I and buried A flexible battery layer on the substrate and electrically connected to the flexible microelectromechanical converter and the = line; electrically connected to the substrate; a flexible battery layer for powering the microelectromechanical converter; and A flexible Bluetooth module is electrically connected to the battery layer. More preferably, the substrate is made of a high molecular (polymer) material such as poly + +, preferably, the battery layer is a polymer battery such as thin paper, which is thick and flexible = capable battery; more preferably, the The flexible micro-electro-mechanical converter includes a membrane electrode 8: a terminal electrode layer, a piezoelectric polymer active layer, an upper electrode layer, and a first electrode connected to the lower electrode layer and the upper electrode layer. The second step is to use a plasma enhanced chemical vapor deposition (PEC VD) method in sequence, and pattern the substrate on which a sacrificial layer is formed. The converter is more flexible: the flexible micro-electromechanical transfer board can be formed on a flexible substrate, which can be embedded in a wire and interface circuit, so the base is folded at a predetermined angle. If one of the ranges less than about 180 degrees is to provide the present invention, another is a flexible micro-electromechanical wireless microphone. This; Mingzhi-provided by the embodiment-poly-enhanced chemical vapor deposition; two.) One: substrate, which It has an electrical converter structure; one of the flexible micro-electromechanical devices printed on A is connected to the external source and embedded; the electrical structure of the converter makes the flexible micro-electromechanical conversion number and line communicate with the interface circuit. The flexible substrate is electrically connected: an antenna forming an electrical path; a flexible battery layer connected to the flexible substrate; and sequentially deposited on page 13 200425768 V. Description of the invention (7) One of a predetermined thickness is better, the One of the ranges of a predetermined angle structure is cut at a predetermined angle and then folded down and then folded into pieces to provide a manufacturing flexibility for the hair into a sacrificial layer; a film layer, _ sequentially the upper end of the order, Depositing an upper layer and the active layer; an electrode layer and the upper layer Patterning, patterning, and patterning with the upper electrical layer to expose the method can deposit one of the PECVD < -method materials to the protective layer. More preferably, the film layer deposits a piezoelectric by depositing a nitrogen method. Bluetooth module layer. The flexible MEMS wireless microphone can be folded at less than about 180 degrees; it is best for me to three-dimensionally flex the flexible MEMS wireless microphone and stack the cut pieces to It is formed to the desired three-dimensional structure, and then combined to form the three-dimensional structure. A further feature, a method of the converter according to an embodiment of the present invention, includes: forming a plasma on a flexible substrate to enhance chemical vapor deposition The (PECVD) procedure is based on a lower electrode layer, an active layer, and an upper electrode layer; the electrode layer, the active layer, and the lower electrode layer form a pattern protective layer to cover the far upper electrode layer, and the lower electrode forms a pattern on the upper protective layer. To connect the lower electrode layer; depositing a connection pad layer and forming the connection pad into a second connection pad connected to the first connection electrode layer connected to the lower electrode layer; and The film sacrifices the layer and then removes the sacrificial layer. Contains before the sacrificial layer is deposited, it is selected from Θ to be selected from the flexible substrate including silicon nitride and oxidized silicon, and is sputtered to The lower end protection sacrificial layer is formed with a thickness of less than about 10 m; more preferably, the silicon is formed; more preferably, I spin-coat a polymer on the lower end electrode layer to form a small thickness

200425768 V. Description of the invention (8) The active layer is about 10 / zm, wherein the piezoelectric polymer may be pVDF, PVDF-TrEF, TrEF, polyurea, polyimide, or nylon; more preferably, we The thickness of the upper protective layer is less than about 10 m. 4. [Implementation] Korean Patent Application No. 2 0 02-filed on September 26, 2002 and titled "Flexible MEMS Wireless Converter and Manufacturing Method and Flexible MEMS Wireless Microphone" 5 8 3 1 3, all of which are hereby incorporated by reference. The invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention will be shown. However, the present invention may be embodied in various forms, and should not be construed as being limited to the embodiments set forth herein. Of course, I provide these examples in order that the present invention can be more thorough and complete, and can fully convey the field of the present invention to those skilled in this technology; we must understand that I mean one layer "on" another layer or another substrate, That means it can be directly on its ^ layer or other substrates' or there can be an intervening layer, and the numbers everywhere are the same as its components. Fig. 3 is a cross-sectional view of a diaphragm-type converter according to an embodiment of the present invention; Fig. 4 is a cross-sectional view of a cantilever-type converter according to an embodiment of the present invention. As shown in Figs. 3 and 4, a converter according to an embodiment of the present invention includes a flexible substrate 100 on which silicon nitride or oxide is deposited using plasma enhanced chemical deposition (PECVD) or sputtering. Hair, shape: lower end protective layer 110 'and a film layer 220, lower end electrode layer 230, an active layer 24g (preferably a second pressure polymer), an upper end, which is opened by PECVD at a low temperature. The electrode layer 250 and the connecting tabs μ i ′ and 2 7 2.

200425768 V. Description of the invention (9) In the case of a film type or cantilever type converter, a sacrificial layer is formed on the substrate 100, the film layer is formed thereon, and then the sacrificial layer is used to form the film In the case of a diaphragm or cantilever type converter, the protrusion of the layer 220 is removed under the film layer. The J layer is completed by removing the sacrificial layer through the open edge. In the case of a diaphragm type conversion, In our case, we use etching and injection to form a predetermined through hole in the film layer. The process from m to H through holes is to a stage in the embodiment of manufacturing the cantilever type converter according to the present invention. Zhuo :: Cantilever beam type, the demonstration process of manufacturing cantilever beam type converter d :: Figures 5A to 5E illustrate it. Jin 7 will be more ..., beautiful handle II '51 * * The manufacturing process of the flexible converter consists of coating a protective layer on the flexible soil plate 100 (^ ^ ^ ^ 1 00 ^ compound) Materials, such as polyimide $ 1M 3 daggers (Polyelectronic systems such as Mike; side coated with nitrogen gas by PECVD or sputtering method. The protective layer 110 of the lower layer of the helium is designed to benefit the lower end with 1 ^ 彳 η extension It is formed by lice silicon or lice silicon, and more preferably, the thickness of the plating process Γ 2 t is less than about 10 °. Using the PECVD or low-level procedure 丨 this; * may be at a low temperature of about 40 ° C or lower The completion of this layer under the program: the function of the terminal Si! 1 is to protect the substrate 100 and promote the deposition of * Figure 上. On the 100, I, ~ Ji Yi # coated the flexible substrate of the lower protective layer 110 The length of the raised portion is a amine layer 21 0, which will be used to form a layer with a predetermined film. The sacrificial layer 2 1 0 is coated with a small thickness.

Page 16 200425768 V. Description of the Invention (ίο)

It is formed at about 10 // m of polyimide, and then the polyimide is patterned according to the desired configuration of one of the film layers, and then a film layer 2 2 0 is deposited on the patterned sacrifice. On the layer 210, the film layer 220 is formed by coating silicon nitride under a low temperature procedure using PECVD. More preferably, the thickness of the film layer 2 2 0 is less than about 5 / zm; secondly, the lower end electrode layer 23 0 system Deposited on the film layer 22, the lower end electrode 230 is formed by depositing a metal such as aluminum or a conductive polymer and patterning the deposited layer with a fisherman's mark or a dry name; then I will A layer 2 40 is coated on the lower electrode layer 2 3 0 and the film layer 2 2 0. The active layer 240 is spin-coated or evaporated to coat a piezoelectric polymer such as PVDF, PVDF-TrEF, TrEF, polyurea, polyimide, nylon and the like. More preferably, the thickness of the active layer 24o is between about i and its length is between 50 # m and 100mm. More preferably, the resonance frequency of the active layer 240 is between about! fjz to 100 kHz. As shown in FIG. 5C, an upper electrode layer 250 is then deposited on the piezoelectric layer 240. The upper electrode layer 250 is formed by depositing a metal such as aluminum or a conductive polymer and wet etching or drying The etching patterned the deposited layer to form a shape. More preferably, the mother electrode, the lower electrode layer 230 and the upper electrode layer 25 are approximately between 0 · 〇1 to 5 V ", at this time I will also The piezoelectric polymer

The material layer is patterned using wet etching or dry etching to form the active 2 4 0. That is, as shown in FIG. 5D, an upper protective layer is formed by depositing silicon nitride to a thickness of about 1 " m to 10 ... to cover the upper end and the electrode layers 230 and 250 and the active layer 240. It is formed such that the piezoelectric polymer active layer 240 can only be subjected to during the removal of the sacrificial layer 21 by etching.

Page 17 200425768 V. Description of the invention (11) to protection; after the upper end protective layer 260 is formed, it is expected to be separated from the upper end electrode layer 25, respectively. And the lower end is electrically connected = connected, the connection pads 271, 272 pass through the shield = shield power eight s, 丨, φ s # Z to use the upper side of the protective layer 260; A part of the electrode layer 250 and the lower electrode layer 230 is reproduced; ie, it is formed by arranging a metal such as an indium or a conductive polymer, as shown in FIG. 5E, removing the sacrificial layer 21 with dry silver, that is, Wucheng forms the flexible cantilever type MEMS converter. The changeover is a cross-sectional view illustrating a manufacturing process stage of a cantilever beam type conversion system according to another embodiment of the present invention. As shown in FIG. 6A, the lower protective layer 11 is formed by using electropolymerization to strengthen the chemistry, and the method is to form a silicon nitride or silicon oxide by depositing it on a flexible substrate 100; secondly, As shown in FIG. 6B, a sacrificial layer is formed by depositing polyimide having a thickness of less than about 10 m and patterning the polyimide. As shown in FIG. 6C, the sacrificial layer is formed. After 20, a film layer 22, a pH electrode layer 23, an active layer 240, and an upper electrode layer 250 are sequentially stacked on the sacrificial layer 210; secondly, as shown in FIG. 6D, The upper electrode layer 250 and the active layer 240 are patterned, and then the lower electrode layer 230 is patterned as shown in FIG. 6E. Subsequently, as shown in FIG. 6F, an upper protective layer 26 is deposited to cover the upper electrode. Layer 250, the lower electrode layer 230, and the active layer 24 (); after the upper protective layer 260 is deposited, as shown in FIG. 6G, the upper protective layer 26 is patterned to correspond to the lower electrode layer 230 and the upper end The electrode layer is electrically connected at 25 °;

Page 18 200425768 V. Description of the invention (12) A metal layer or a conductive polymer layer is deposited on the total Zen pattern layer 260, which has been patterned on the edge, and then patterned to form a toilet. m 钿 保 濩 ^ One of the first connection pads 272 connected to the lower electrode layer 2 3 0 of Xingbian and the connection part of the upper electrode layer ^ Γ: Λ soil, and the connection part of the second upper electrode layer 2 5 0 One of the second connection pads 271; double blow, cup 闰 βτ ^ Dan-person, as shown in FIG. 6I, the film layer 220 is patterned to expose the sacrificial layer 21, m < ^ 1 υ , / Mainly enter an etchant to remove the sacrificial layer 2 1 0 ', thus completing a flexible MEMS converter. As for the manufacturing method of the flexible micro-electromechanical converter, as shown in FIG. 5A to “red,” I can deposit the structural layer of the flexible micro-electromechanical converter and pattern it separately, or as shown in FIG. 6A to 6J, it can be deposited first This layer is then patterned according to the above manufacturing method. We may use a low temperature procedure (such as PECVD) to form a converter structure 200 on a flexible substrate 100 (such as a polymer). According to an embodiment of the invention, the converter structure 2000 is used to deposit thin layers by PECVD or sputtering, instead of using CVD, which requires a high temperature procedure of about 780 ° C to 8500 ° C, and the difference in temperature levels required during this time. The reason is related to the energy used by individual processes. In particular, the PECVD procedure uses plasma as the energy required for the reaction, but the traditional cvd procedure uses thermal energy, so it can reduce the thermal energy and the film can be formed under one of the low temperature procedures of PECV]); more specifically, we may The thin layer forming the converter structure 2000 is deposited at a low temperature, thus allowing the use of a flexible polymer substrate 1 ′. Therefore, a flexible microphone can be manufactured according to the present invention. The application of the present invention further provides a free flexible microphone according to an embodiment of the present invention. FIG. 7 is about page 19, 200425768 of the cantilever type converter shown in FIG. 4. V. Description of the invention (13) ---- -A schematic diagram of a skin-type flexible wireless MEMS microphone. As shown in FIG. 7, a micro-electromechanical converter structure 2 is formed on the flexible microphone flexible substrate using the flexible micro-electro-mechanical converter. . Hand-made preparation: Cheng: On, print a thin-film antenna 300 on one side of the substrate 100 with a view to external sources and embed a wire and interface circuit 400 to communicate with the thin-film antenna 300 and the flexibility The MEMS converter 200 is electrically connected; the produced substrate 100 and a battery layer 500 electrically connected to the flexible substrate 100 are made into a thin plate to supply power to the MEMS converter 200 and a flexible Bluetooth Module layer 60 (); more preferably, the battery layer 500 is a polymer battery and has a paper-like thickness, such as a flexible polymer solar cell. In this way, the flexible micro-electromechanical device prepared by preparing the substrate 100 having the converter 2000 formed by the battery layer 500 and the flexible Bluetooth module layer 600 with a predetermined thickness is made into a board. The microphone can be used as a skin / micro-electro-mechanical microphone. This skin-type flexible micro-electro-mechanical microphone is freely flexible on all sides, and it can be used on durable devices. σ In addition, since the flexible substrate 100 can be folded at a predetermined angle, the flexible wireless microphone according to the present invention can be packaged into a three-dimensional shape 1; Preferably, the predetermined angle is less than about 80 Within the range, Figure 8 is a schematic diagram of an example of a flexible wireless microphone. As shown in FIG. 8, a flexible electrical converter structure 200 is formed on a flexible substrate 100, an antenna = a mechanical brush on the flexible substrate 100, and a wire and an interface circuit 400 stamp, Inside the flexible substrate 100; then I cut the flexible substrate 100 in a two-dimensional shape according to one of a microphone package and cut it at a predetermined angle and combined it into the desired two-dimensional shape. Shape to form a three-dimensional microphone. 200425768 V. Description of the invention (14) Because the substrate on which the 5 helical micro-electromechanical converter is formed is like a paper: Temple 5: It can be packaged according to the microphone The three-dimensional structure is cut and folded, and then assembled into the desired three-dimensional structure of the package. Xifangΐ The skin-type microphone containing a thin plate formed on the substrate / the Bluetooth module layer 600 can be t-cut and all folded together, and combined into a three-dimensional structure to form an electric microphone 'or as shown in the figure As shown in FIG. 8, the three-dimensional structure is combined with the battery 20- and the module module layer 600. I cut the substrate with the converter structure ^ 'and the wire and interface circuit 40 0 on it according to a development chart of a 200 person, one of the US, and folded it at a predetermined Γ ^ «degree, and combined the flexure Battery layer 500 and the Bluetooth module: 600 of the three-dimensional structure to form-three-dimensional micro-electro-mechanical flexible micro-electro-mechanical wireless microphone can be used in cats-Modal Electric / Brother paper mouth is better than less than about 18G degrees —Folding at a predetermined angle, if the range can be more particularly 'according to the present invention— ^. Use-flexible polymer substrate', for example, the microphone structure is made of a thin plate of the substrate and the wind is formed into a desired three-dimensional structure. . & —dimensional microphone, and then make the microphone sequence:;: narrative = invention, because a converter structure can be flexible polymer substrate with low temperature range; such as ⑶, we can be flexible, flexible, foldable mouth Annoying mobile microphone system; furthermore, the flexure that has superior characteristics prevents it from being flexible and foldable, so I p. 21 200425768 V. Description of the invention (15) People may lose packaging and a three-dimensional microphone mounting structure . Going forward — as required freely & In addition, 'individual root preparations can be used to package various kinds of micro-electromechanical devices of the present invention, but it is only here — therefore; Shape and detail. Bring it in your body; therefore, change its shape to one of the desired thicknesses of the best implementation and description of the converter. You can freely design the various shapes The microphone has the flexibility of an embodiment, so it can be used as a flexible micro-electromechanical method for skin shape. The example has been published here. Although the descriptive concept should be used and explained, those skilled in the art must understand: in the stated field and spirit, the skin-shaped microphones of different shapes are easy to carry, and the microphones can be free microphones. To the special items, but without limitation, it does not deviate from the present invention, and various changes can be made.

Brief description of the drawings on page 22. [Simplified illustration of the drawings] The above and other detailed descriptions of the present invention are compared with the preferred embodiments, and the advantages will be referred to the drawings and understood in detail, of which: General in self-use technology Technology is more obvious and easy = :: II Cross-sectional view of traditional MEMS converter. M ^ cross-sectional view of a conventional flexible micro-electro-mechanical converter. Figure 4: Cross section of a diaphragm type converter according to an embodiment of the invention Figure 4 is a sectional view of a cantilever type converter according to an embodiment of the invention. 5A to 5E are cross-sectional views illustrating the manufacturing process stages of the cantilever type converter shown in FIG. 4. 6A to 6J are cross-sectional views illustrating the manufacturing process stages of a cantilever beam type converter according to another embodiment of the present invention. FIG. 7 is a schematic diagram of a skin-type flexible wireless MEMS microphone as one of the cantilever-type converters shown in FIG. 4. FIG. 8 is a schematic diagram of a three-dimensional wireless microphone package of the cantilever type converter shown in FIG. 4.

Element # symbol description: 100 substrate 110 lower protective layer 20 0 converter structure 210 sacrificial layer

Page 23 200425768 Brief description of the diagram 220 Film layer 230 Lower electrode layer 2 4 0 Active layer 250 Upper electrode layer 260 Upper protective layer 271 Connection gasket 272 Connection gasket 300 Antenna 400 Wire and interface circuit 50 0 Battery layer 6 0 0 Bluetooth module layer

Page 24

Claims (1)

zuuh-aj / υο zuuh-aj / υο six include: and the film layer has a predetermined length of conductive material and piezoelectric polymer and a conductive material are sexually connected; and sexually connected. Electromechanical converter Electromechanical converters, electromechanical converters, electromechanical converters of a metal thin film institute, electromechanical converters, patent application scope of flexible micro-electromechanical drags: flexible material substrate conversion '— film layer, its deposited convex portion; Θ substrate The upper and lower end electrode layers are formed by pots; and are formed by depositing on the film layer; an active layer is formed by depositing on the lower electrode-and an electrode layer is formed by depositing on the active layer-first The connection pad is electrically connected to the lower electrode layer, and the first connection tab is electrically connected to the upper electrode layer. The flexibility as described in item 1 of the patent application range further includes coating on the substrate. Lower protective layer. 3 · The flexible micro device as described in item 2 of the scope of the patent application, wherein the lower protective layer is formed by silicon nitride or silicon oxide 4 · The flexible micro device as described in item 2 of the scope of the patent application, wherein the lower protective layer The thickness is less than about 1 0 # m. 5 · The flexibility as described in item 1 of the patent application range wherein the substrate is made of a polymer (polymer) material or. 6 · The flexibility as described in item 5 of the patent application range wherein the polymer (polymer) material is polyimide. 7. Flexibility as described in item 1 of the scope of patent application Page 25 200425768 6. Scope of patent application Wherein the film layer is formed of silicon nitride. 8. The flexible micro-electro-mechanical converter according to item 1 of the scope of patent application, wherein the thickness of the film layer is less than about 5 // m. 9. The flexible micro-electro-mechanical converter according to item 2 of the scope of the patent application, wherein the lower electrode layer and the upper electrode layer are formed of a material selected from the group consisting of a metal and a conductive polymer. Device device Device device 10. The flexible micro-electro-mechanical conversion as described in item 9 of the scope of patent application, wherein the metal is aluminum. 11. The flexible micro-electro-mechanical conversion as described in item 1 of the patent application range, wherein the thickness of the lower electrode layer is between about 0.01 Am and 5 / zm. 12. The flexible micro-electro-mechanical device as described in item 1 of the patent application range The thickness of the far upper electrode layer is about 0.01 // m to 5 / zm. 13 The flexible micro-electromechanical converter described in the first item of the patent application scope, wherein the piezoelectric polymer is composed of pvDF, Selected from the group pvDF-TrEF, TrEF, Polypulse, Polyimide, and Nylon. Device 14. The flexible micro-electromechanical conversion as described in item 1 of the Shen-Jin patent range, wherein the thickness of the active layer is between about 1 / z m and 1 0 // m. Device 15 · A flexible micro-electromechanical converter as described in item 1 of the scope of the patent application, a device in which the resonance frequency of the active layer is between about 1 Hz and 100 kHz 16. · As described in the item of scope of the patent application Flexible Micro-Electro-Mechanical Conversion 'wherein the length of the active layer is between about 5 0 // m to 1 0 0 〇 # m < Page 26 200425768 VI. Scope of Patent Application 17. The device further includes an active layer. 18. The application device, where the above 19. The application device, where the above 20. The application device, where the first and the conductive polymer 21. A kind of flexibility as described in item 1 of the patent application scope The upper protective layer of electromechanical conversion covers the upper and lower electrode layers and the patented end protective layer. So that the sacrificial layer is deposited on the film layer; sequentially, one is formed in sequence, and an electrode connected to the upper end is formed in order to remove the sacrificial 2 2 · Rushen manufacturing method, an activity is deposited on the deposited layer The layer and the upper end are electrically connected to the second animal layer of the lower layer. The patent scope also includes: The flexible micro-electromechanical conversion described in item 17 of the front of the sacrificial layer is made of silicon nitride or silicon oxide. The thickness of the flexible micro-electromechanical conversion described in item 1 is about 1 // m to 10 // m. The flexible micro-electro-mechanical conversion sheet and the delta-first connection tab described in item 1 are formed of a material selected from the group consisting of metals. A method for manufacturing an electrical converter includes: forming a sacrificial layer; vapor deposition (PECVD) and patterning a film layer thereon; a lower electrode layer, and depositing the lower electrode layer and an upper electrode layer on the lower electrode layer The electrode layer and the active layer are patterned; ^ electrode layer connection pads and-connection connection tabs; and 媸 / W described in item 21: the test electromechanical converter m 'he J deposited by PECVD Silicon nitride or oxidation 200425768 Sixth, the scope of patent application Shi Xi, to form a lower end protective layer. 2 3. The method for manufacturing a flexible micro-electro-mechanical converter as described in item 21 of the scope of patent application, wherein the formation of the sacrificial layer is based on a desired configuration of one of the film layers, and a polyurethane is coated on the substrate. The amine layer is obtained by patterning the coated polyimide layer with wet recording or dry etching. 24. The method for manufacturing a flexible micro-electro-mechanical converter according to item 21 of the scope of patent application, wherein the thickness of the sacrificial layer formed is less than about 10 m. 2 5. The method for manufacturing a flexible micro-electro-mechanical converter as described in item 21 of the scope of patent application, wherein forming the film layer comprises: using plasma enhanced chemical vapor deposition (PECVD) to deposit a layer on the sacrificial layer A nitride nitride layer; and patterning the deposited silicon nitride layer by dry etching. 26. The method for manufacturing a flexible micro-electro-mechanical converter according to item 21 of the scope of application, wherein forming the active layer comprises: depositing a piezoelectric polymer layer on the lower electrode layer by spin coating or evaporation; And the deposited piezoelectric polymer layer is patterned by wet etching or dry etching. " 27. The method for manufacturing a flexible micro-electro-mechanical converter as described in item 26 of the scope of patent application, wherein the piezoelectric polymer is composed of PVDF, PVDF-TrEF, TrEF, polyurea, polyimide And nylon. 28. The method for manufacturing a flexible micro-electromechanical device as described in item 21 of the scope of patent application, wherein the thickness of the active layer formed is less than about 丨 〇 # 益 200425768 6. Scope of patent application m 〇 2 9 · The manufacturing method of the flexible micro-electromechanical converter as described in item 21 of the scope of patent application, further comprising: forming an upper end protection layer to cover the upper and lower electrode layers and The active layer; wherein the upper protective layer is formed by depositing nitrided stone oxide or oxidized stone with PECVI), and then patterning the deposited layer by wet etching or dry etching. 30. The method for manufacturing a flexible micro-electro-mechanical converter according to item 29 of the scope of patent application, wherein the thickness of the upper protective layer formed is less than about 10 β m. 31. The method for manufacturing a flexible micro-electro-mechanical converter according to item 21 of the scope of patent application, wherein forming the first connection pad includes: connecting the upper end protective layer to the lower end by means of fish etching or dry etching. A portion of the protective layer is patterned; a metal layer or a conductive polymer layer is deposited thereon; and the deposited layer is patterned by wet etching or dry etching. 3 2 · The method for manufacturing a flexible micro-electro-mechanical converter according to item 21 of the scope of patent application, wherein forming the second connection pad includes: connecting the upper protective layer to the upper end by wet etching or dry etching. Part of the protective layer is patterned; a metal layer or a conductive polymer layer is deposited thereon; and the deposited layer is patterned by wet etching or dry etching. 33. A flexible wireless micro-electro-mechanical microphone, comprising: a flexible polymer material substrate; Page 29 200425768 A flexible micro-electromechanical converter structure is formed on the substrate by using plasma plus phase deposition (PECVD); a random antenna is printed on the substrate and is used to interface with a wire A circuit embedded in the substrate, the electromechanical converter and the antenna are electrically connected; external source communication; the micro-electromechanical converter that can be connected to a flexible micro-flexible battery layer and electrically connected to the substrate; And 'is used to supply a flexible Bluetooth module layer of electric wind and wind, which is electrically connected to the battery layer. 34. The flexible wireless micro-electro-mechanical microphone according to item 33 of the scope of the patent application, wherein the substrate is formed of a polymer (polymer) material. 35. The flexible wireless micro-electro-mechanical device according to item 34 of the scope of the patent application, wherein the southern molecular (polymer) material is polyimide. 36. The flexible wireless micro-electro-mechanical device described in item 33 of the scope of patent application, wherein the battery layer is a paper-like polymer battery. 37. The flexible wireless micro-electro-mechanical microphone according to item 33 of the scope of the patent application, wherein the battery layer is a flexible solar cell. 3 8. The flexible wireless micro-electro-mechanical microphone as described in item 33 of the scope of the patent application, wherein the flexible micro-electro-mechanical converter includes: a mountain-film layer, a lower electrode layer, a piezoelectric polymer active layer, a The upper electrode layer and the two connection pads and the second connection pad connected to the lower electrode layer and the upper electrode layer, respectively, are sequentially deposited by using a plasma enhanced chemical gas / child deposition method (PECVD) and It is obtained by performing patterning on the substrate forming a sacrificial layer. 39. Flexible wireless microelectromechanical device as described in item 33 of the scope of patent application Page 30 200425768 6. The scope of patent application is Kefeng, where the flexible substrate can be folded at a predetermined angle, and the micro-electro-mechanical converter is formed on the substrate, the antenna is printed, and the wires and interface circuits are embedded. . ^ 40. The flexible wireless micro-electro-mechanical microphone according to item 33 of the scope of patent application, wherein the range of the predetermined angle is less than about 180 degrees. 41 · A flexible wireless micro-electro-mechanical microphone comprising: a flexible substrate having a flexible micro-electro-mechanical converter structure formed by a plasma enhanced chemical vapor deposition method (PECVD), and printed on the substrate An antenna that is electrically connected to the MEMS converter structure and is used to communicate with an external source; a wire and interface circuit buried under the substrate can be electrically connected to the flexible MEMS converter and the antenna Connection; a flexible battery layer electrically connected to the flexible substrate; and a flexible Bluetooth module layer sequentially deposited to a predetermined thickness. 42. The flexible wireless micro-electro-mechanical microphone according to item 41 of the scope of patent application, wherein the flexible wireless micro-electro-mechanical microphone can be performed at a predetermined angle of 45 · —a method for manufacturing a flexible micro-electro-mechanical converter in a flexible A sacrificial layer is formed on the substrate; 43. If the scope of the patent application is 41 grams, the range of the predetermined angle is 44. If the scope of the patent application is 41 grams, the edge of the flexible wireless micro-electromechanical wheat is cut, and The dicing is combined with the folded dicing to form the flexible wireless micro-electro-mechanical microphone described in the three-dimensional structure item, which is less than about 180 degrees. The flexible wireless micro-electro-mechanical microphone according to the item is folded at a predetermined angle according to a desired three-dimensional structure, and then formed. include: 200425768 VI. Application scope: Plasma enhanced chemical vapor deposition (PECVI) method is used to sequentially deposit a film layer, a lower electrode layer, an active layer and an upper electrode layer on the sacrificial layer; The upper electrode layer, the active layer, and the lower electrode layer are patterned; an upper protective layer is deposited to cover the upper electrode layer, the lower electrode layer and the active layer; and will be connected to the lower electrode layer and the upper electrode layer Pattern the upper protective layer, deposit a connection pad layer and pattern the connection pad layer to form a first connection pad connected to the lower electrode layer and a first connection pad connected to φ the upper electrode layer Two connecting cymbals; and patterning the film layer to expose the sacrificial layer and remove the sacrificial layer. 46. The method for manufacturing a flexible micro-electro-mechanical converter according to item 45 of the scope of patent application, further comprising: °° Before the sacrificial layer is deposited, a method selected from pECVD and sputtering is applied to the flexible substrate. A material selected from the group consisting of silicon nitride and silicon oxide is deposited thereon to form a lower protective layer. 47. The method for manufacturing a flexible micro-electro-mechanical converter as described in item 45 of the scope of the patent application, wherein the thickness of the sacrificial layer is less than about 0 #m. ° 48. The manufacturing method of the flexible micro-electromechanical converter according to item 45 of the scope of the patent application, wherein the film layer is formed by depositing silicon nitride. Zhai, 49. The method for manufacturing a flexible micro-electro-mechanical converter as described in item 45 of the scope of patent application, wherein the active layer is a spin-on coating or evaporation method, and a piezoelectric polymer layer is deposited on the electrode layer. And formed. ; 200425768 6. Application for patent scope 50. The method for manufacturing a flexible micro-electromechanical converter as described in item 49 of the scope of patent application, wherein the piezoelectric polymer is composed of PVDF, PVDF-TrEF, TrEF, polyurea, polyfluorene Selected from the group of imine and nylon. 51. The method for manufacturing a flexible micro-electro-mechanical converter according to item 45 of the scope of patent application, wherein the thickness of the active layer is less than about 10 A m. 52. The method for manufacturing a flexible micro-electro-mechanical converter according to item 45 of the scope of patent application, wherein the thickness of the upper protective layer is less than about 10 // m. Page 33