TR202022603A1 - A SILICUM-BASED CLOSED AND INTEGRATED PLATFORM FOR INVESTIGATION OF RADIATION TRANSFER ON THE MICRO-NANO SCALE - Google Patents

Abstract

The invention is a closed and integrated YAI platform (12) for the study of radiation transfer at the micro-nano scale, a diffuser (5) containing a silicon carbide thin film (2) coated on a silicon substrate (1), a silicon coated on a silicon substrate (1) A collector (6) containing a carbide thin film (2) is coated on silicon carbide thin films (2) of the emitter (5) and the collector (6), and the distance between the emitter (5) and the collector (6) is determined by the thermal radiation wavelength (?). 3 cm x 3 cm sized chips (YAI platforms (12)) were obtained by cutting the integrated structure (7), which was assembled from patterned contact surfaces, which are silicon dioxide intermediate columns, and obtained in the size of flakes, in a vacuum environment to ensure that they are small and parallel to each other. The production method of the said YAI platform (12) is also within the scope of the invention.

Description

DESCRIPTION A SILIGIUM-BASED CLOSED AND INTEGRATED PLATFORM FOR THE STUDY OF HEAT TRANSFER AT THE MICRO-NANO SCALE Subject of the Invention The invention relates to a silicon-based, closed and integrated near-field heating (NAI) platform developed for the purpose of examining the heat transfer at the micro-nano scale, and the production method of this platform. . The production method of the said platform is based on micro-nano fabrication techniques. State of the Art: If the distance (d) between two objects held at different temperatures is smaller than the wavelength of thermal radiation (Ã), the heat transfer that occurs between objects through radiation is called near-field radiation (NAI). Near-field radiative transfer is felt if the distance (d) between materials supporting surface waves is smaller than the dominant wavelength (Â), which is used as the scale based on Planck's law; This wavelength must be less than 10 pmI at room temperature. For this reason, near-field radiation transfer can also be defined as radiation transfer at the micro-nano scale. In order for near-field radiation to occur, the distance between the objects where the radiative heat transfer will take place must be at the micro-nano scale, while it is not necessary for these objects to be at the micro-nano size. Heat transfer via near-field radiation can exceed the black body limit by several orders of magnitude (more than 1000 times) at certain wavelengths, depending on the structure of the objects. For example, YAI transfer between two media placed opposite each other, at a temperature of 1000 K, at d = 100 nm emitter-collector distance, at certain wavelengths, the black body limit is for gallium nitrate (GaN) emitter-collector pair, 7525, silicon carbide (SiC). It is 4168 times higher for the emitter-collector duo and 3307 times higher for the cubic boron nitride (cBN) emitter-collector duo. These increases have application potential for the need for environmentally friendly use of energy. Precise determination of near-field radiation between two objects is possible by separating the amount of radiative heat transfer by eliminating conduction and convection heat transfer mechanisms. For this purpose, near-field radiation is applied in vacuum chambers by adjusting the very precise (nanometric precision) distances, planar and angular positions of the object kept at high temperature (emitter) and the object kept at low temperature (collector) with the help of a micro-nano positioner. is measured. In addition to the micro-nano positioner, these systems include a heater to keep the emitter at high temperature, a cooler to keep the collector at a low temperature, monitoring the temperatures of the emitter and collector and measuring the heat transfer between the emitter and collector, as well as simultaneous control of many measurement parameters such as the ambient vacuum level. It requires vacuum systems that are costly, complex and require special expertise and labor to surround the system with monitoring and recording. The basic configuration containing parallel plates for the theoretical and experimental investigation of near field radiation is shown in general terms in Figure 1. Figure-1 shows the vacuum environment between the emitter (high temperature object), collector (low temperature object) and the emitter-collector in more detail. The distance between the emitter and collector is indicated by arrows. International-scale mechanisms where near-field radiation is investigated are useful for measurements of near-field radiation, and are considered as systems that are brought close to each other with mechanical mechanisms in artificially created controlled vacuum environments, and are still in the research and laboratory stages. In technical applications. The necessity and difficulty of precisely determining the distance (d) between the mechanism used and the emitter-collector is stated by many researchers. The main difficulties in the systems found in the technique for examining near-field radiation are ensuring a uniform distance between the emitter and collector, maintaining and repeatability of this distance, and ensuring the parallelism between the emitter and collector. It was stated that in the experiments, the difficulty was encountered in aligning the emitter and collector parallel to each other and maintaining a uniform distance between them. "Applied Physics Letters 106" (K. Ito, A. Miura, H. Iizuka, H. Toshiyoshi, the distance d between the emitter and collector was adjusted using columns, and the distance between the emitter and collector was adjusted due to the deformation due to the pressure applied to position the emitter and collector during the measurements. It has been observed that the distance may be smaller than the column height. Measurements were made for a distance of d = lum between objects, but it was stated that the measurement results were compatible with the theoretical results obtained for a distance of d = 1.6 um. The 60% difference between them is noteworthy. It has been predicted that this may be due to the size differences of the polystyrene particles placed between the emitter-collector to ensure the distance between the emitter-collector. "Physical Review Letters shows that the bending of the lower stage carrying the collector even at an angle of ±0.002° disrupts the parallelism of the emitter-collector and changes the YAI rate by ±5%. In the study subject to the document called "Nature Photonics" (E. Rousseau, A. Siria, G. Jourdan, S. Volz, F. Comin, 2009, 3, 514-517), the importance of emitter-collector parallelism and the difficulty of ensuring it are taken into consideration. Considering this, the sphere-plate configuration was examined instead of the flat plate-plate configuration. In theoretical studies, emitter-collector pairs with uniform micro-nano distances between them, perfectly parallel to each other and with smooth surfaces are considered as the ideal YAI system. Although the applications closest to this ideal system mentioned above are developed with very sensitive and high-tech methods and are carried out in a controlled vacuum environment, they have the mentioned distance (d), parallelism and repeatability problems. Unlike the vacuum chamber-based YAI platforms, which are the general trend in the technique, a platform aimed to operate under standard environmental conditions is called "FÄBRICATION OF NÄNOSTRUCTURED SAMPLES EUR THE INVESTIGATION OF NEAR FIELD RADIATION TRANSFER" (2. Artvin, 2012, Master's Thesis, Middle East Technical University). It is explained in the document. The mentioned document is about samples containing SiOz-coated Si wafers and produced with MEMS production techniques for measuring near-field radiation effects. In the mentioned document, different numbers of chips (samples) were created in a permanently combined structure with a surface area of 1 mm x 1 mm, 2 mm x 2 mm, 5 mm x 5 mm and 20 mm x 20 mm. In the document in question, four structures are separated depending on the distance d between the parallel Si samples (25 nm, 50 nm, 100 nm, 200 nm). The 1 mm x 1 mm, 2 mm x 2 mm and 5 mm x 5 mm structures created in the document are for the use of equipment such as the heater plate to be mounted on the emitter side of the sample, the heat well to be mounted on the collector side of the sample, temperature meter, heat flow meter. Its applicability presents difficulties. In vacuum, confined and atmospheric conditions, it is possible for parallel parts of the structures to work, separated by a distance d, to collapse and come into contact with each other. One of the two 20 mm x 20 mm structures mentioned in the document is located within a completely assembled stamp pair, and it is seen that this structure has only outer walls. However, the document in question does not explain the SiC-containing platform and its derivative that enable it to support surface phonon polaritons. Another example of the known state of the technique is the document called "IMPACTS OF MATERIAL TYPES AND FÄBRICATION.METHODS TO ENHÂNCE NEAR FIELD RADIÂTIVE TRANSFER FOR ENERGY HARVESTING" (Elif Begüm Elçioğlu, Tuba Okutucu Özyurt, M. Pinar Mengüç). The mentioned document deals with the effect of material selection in analyzing near-field radiation and in the production of energy harvesting devices. In the document, a general production method of near field radiation energy harvesting devices and, in more detail, energy harvesting devices containing SiC coated samples is mentioned. The production method in question in its most general form; It includes thin film coating, lithography, etching, flake bonding and flake cutting process steps. The document does not provide detailed information about the parameters and contact surface of each production technique. In addition, the document in question does not describe a platform that ensures the distance d and parallelism between the emitter and collector. In order to eliminate the above-mentioned disadvantages, a closed and integrated YAI platform has been developed to examine near-field radiation under atmospheric conditions without requiring a vacuum environment outside the platform, providing a solution to the problems of ensuring a uniform distance between the emitter and collector, maintaining the distance and ensuring its repeatability. Detailed Description of the Invention The invention relates to a silicon (Si) based, closed and integrated single YAI platform (12) developed for the examination of near field radiation and the production method of this YAI platform (12). In more detail, the invention involves silicon carbide (SiC) and silicon dioxide (SiOz) materials with Si-based micro-nano fabrication processes. The production method of the YAI platform (12) subject to the invention is based on various microelectronic mechanical systems (MEMS) approaches and production steps. The invention lies at the intersection of mechanical engineering, electrical and electronics engineering, materials science and engineering, energy systems engineering and physics. An aim of the invention is to obtain usable energy output in today's applications that demand high efficiency and low carbon footprint, through the use of radiative heat transfer, which is accessible at the micro-nano scale and occurs in quantities many times greater than the macro dimension. Therefore, by using waste heat input of appropriate quality and temperature, choosing appropriate materials and configuration, and going beyond the controlled laboratory environment, a Si-based device in the form of a closed and integrated YAI jplatform (12) and the production method of this device have been developed. Silicon carbide (SiC) is another basic material of the device/YAI platform (12) developed for its high efficiency and suitability for use in Si-based micro-nano fabrication techniques. The invention is a closed and integrated YAI platform (12) for examining the heat transfer at the micro-nano scale, - an emitter (5) containing a silicon carbide thin film (2) coated on the silicon substrate (l), - silicon substrate (l). A collector (6) containing silicon carbide thin film (2) coated on it, - emitter (5) and silicon carbide thin films (2) coated on the collector (6) and the distance between the emitter (5) and collector (6) is It contains silicon dioxide intermediate columns that will serve as the contact surface between the emitter (5) and collector (6) when combined in a vacuum environment to ensure that they are smaller than the length (Ã) and parallel to each other, and - the contact surfaces of the said silicon dioxide intermediate columns are patterned. In an embodiment of the invention, the pattern is a thick square wall (8), a thin square wall (9), a column (10) and a hexagonal honeycomb (ll) pattern. In one embodiment of the invention, silicon dioxide thin films (3) are combined to be mirror images of each other. In an embodiment of the invention, the silicon substrates (l) of the emitter (5) and collector (6) contain codes that define the contact surface pattern. In an embodiment of the invention, the size of the YAI platform (12) is 3 cm x 3 cm. The production method of the closed and integrated YAI platform (12), which was developed to examine the micro-nano scale thermal transfer subject to the invention, is also within the scope of the protection of the invention. In its most general form, the production method of a closed and integrated YAI platform (12) developed for the examination of heat transfer at the micro-nano scale, which is the subject of the invention; a.Obtaining the emitter (5) by coating a silicon carbide thin film (2) on the silicon substrate (1) and obtaining the collector (6) by coating a silicon carbide thin film (2) on the silicon substrate (1), b. Coating the silicon carbide thin films (2) of the emitter (5) and collector (6) with silicon dioxide thin film (3) to form intermediate columns, patterning the surfaces of the said silicon dioxide thin film (3), d. the contact surface will be the patterned surface. In the following way, the distance between the emitter (5) and the collector (6) is closed by combining them under vacuum in a way that is smaller than the thermal radiation wavelength (A) and parallel to each other, and by cutting the integrated structure (7) obtained in e.e1, individual chips, that is, YAI platforms (12), are obtained. It includes the steps of the process. In an embodiment of the invention, in step c, the thick square wall (8), thin square wall (9), column (10) and/or hexagonal honeycomb (ll) pattern is patterned. In an embodiment of the invention, in step a, silicon carbide thin film (2) is coated with the RF magnetron sputtering technique. In one embodiment of the invention, silicon carbide thin film (2) is coated with the RF magnetron sputtering technique with an integrated SiC target. In one embodiment of the invention, silicon carbide thin film (2) is coated with a monolithic SiC target using the RF magnetron sputtering technique. In an embodiment of the invention, in step b, the silicon dioxide thin film (3) is coated with plasma-assisted chemical vapor deposition technique. In an embodiment of the invention, in step c, the surfaces of the silicon dioxide thin film (3) are patterned with the photolithography technique. In an embodiment of the invention, in step d, the emitter (5) and collector (6) are joined from silicon dioxide contact surfaces coated with plasma-assisted chemical vapor deposition technique with chemical activation. In an embodiment of the invention, in step d, the emitter (5) and collector (6) are joined from silicon dioxide contact surfaces coated with plasma-assisted chemical vapor deposition technique by plasma activation. In an embodiment of the invention, in step d, the emitter (5) and collector (6) are joined from the thermal oxide (SiO2) contact surfaces by plasma activation. In an embodiment of the invention, 4 YAI platforms (12) with a surface area of 3 cm x 3 cm are obtained by cutting the combined integrated structure (7) at step e. The integrated structure (7) is the version of the YAI platform (12) before it was reduced to 3 cm x 3 cm. The YAI platform (l2), which is the subject of an embodiment of the invention, is given in Figure 2b and a view of the systems in the literature where YAI is examined is given in Figure Za. In literature in general. While the installation of the platform required for the examination of YAI requires holding and positioning the emitter (5) and collector (6) with the material holder (13) as required by the system, as shown in Figure-Za, the YAI platform subject to the invention shown in Figure-Zb (12) an integrated and closed system. Each YAI platform (12) is a designated `d. It will have the distance value. It is produced as follows. The production steps of the YAI platform (l2), which is the subject of an embodiment of the invention, are summarized schematically in Figure B. Silicon carbide thin film for the YAI device/YAI platform (l2) subject to the invention. (2) The coating was carried out by RF magnetron sputtering method. Silicon dioxide thin film (3) coating on silicon carbide thin film (2) was carried out by plasma assisted chemical vapor deposition (PECVD) method. As can be seen in the last stage of Figure-3a, the contact surfaces of Si Kaizeme coated with silicon carbide thin film (2) are silicon dioxide thin film (3). Since one of the combined SiC-coated Si wafers will be the emitter (5) by heating one side, and the collector (6) by cooling one side of the other, it is necessary to select the contact surface with low thermal conductivity, such as SiO, in order to examine near-field radiation in a closed system. Contact areas and shapes of different sizes were created to examine the effect of contact surfaces on conduction heat transfer. The mentioned different sized contact areas and shapes are thick square walls (8), thin square walls (9), columns (10) and hexagonal honeycomb column (ll) and are shown in Figure-Bb. The inner surfaces of the materials created by photolithography are given in Figure-3b and the outer surfaces are given in Figure-3c before combining them in a vacuum environment so that the patterns on them are mirror images of each other. There are codes defining the internal pattern on the outer surface of the produced YAI platform (12), and the pattern related to these codes was created by photolithography. Since this YAI platform (12) can be used in atmospheric conditions and only the space where YAI will take place will be vacuum, the assembly of the system was done in a vacuum environment. After assembly, the structure whose outer surface is shown in Figure-3c is obtained as 4 YAI devices of 3 cm x 3 cm size. It was cut in the direction shown by the dashed lines. The production method of the YAI platform (12) subject to the invention is explained in more detail below. l) Silicon carbide thin film (2) coating: Two different RF magnetron sputtering recipes have been developed for coating Si wafers with SiC using the RF magnetron sputtering method: integrated SiC target material (2" diameter) and monolithic SiC target material (4" diameter). . a) Development of RF Magnetron Sputtering Recipe with Integrated SiC Target In the integrated SiC target material, the SiC target is combined with a copper (Cu) plate, and the manufacturer aims to ensure effective heat management of the target during the process with the help of the high-conductivity Cu plate and to protect the SiC target from thermal shocks. . RF magnetron sputtering recipe parameters developed using integrated SiC target: 150 sccm Ar flow, 75% gate valve position (1.3XlO*2 Torr pirani vacuum gauge value, 1.6xlO'3 Torr ion gauge pressure value) and l5 rpm silicon It started with the rotation speed of the substrate (l). For the use of the integrated target material, the power increase-decrease rates during the coating process are determined by the manufacturer as Ji) W/min. After plasma was formed, the parameters were set to 100 sccm Ar flow, 60% inlet valve position, 4.3 mTorr pirani vacuum gauge value, 1.3 mTorr ion gauge pressure value. When 62 W RF power was reached, the parameters were defined as 100 sccm Ar flow, 61% inlet valve position and 15 rpm rotation speed of the substrate to be coated, and coating was started. A coating speed of approximately 1 nm/min was achieved with this recipe. In subsequent processes, the same recipe was used for different periods of time and its repeatability was proven. In Figure-4a and Figure-4b, the recipe developed for the RF magnetron sputtering process with integrated target material and the process voltage of the processes performed with high repeatability - RF power (Figure-4a) and silicon carbide thin as read from the thickness monitor (TM). The process times corresponding to the film (2) value are shown (Figure-4b). The developed recipe has high repeatability as shown in Figure-4a and Figure-4b. b) Development of RF Magnetron Sputtering Recipe with a Monolithic SiC Target. Since the monolithic target does not have a conductive (e.g. Cu) back plate as in the integrated target, in case the target material breaks due to thermal shocks, the SiC material is more sensitive to heating as it cannot be held together. In order to prevent overheating of the monolithic target, the coating recipe was developed as 30 min process, 30 min stop (break), 30 min process under the conditions of 150 W RF power, 3 mTorr process pressure and 50 sccm Ar flow. Process outputs are 148 W and 75 volts. As a result of the process, approximately 50 mm SiC film was coated and the coating speed was obtained as 0.833 nm/min with this recipe. 2) Silicon dioxide thin film (3) coating Silicon dioxide thin film (3) coating on silicon carbide thin films (2) was carried out by PECVD method at 12 sccm SiH4, 1420 power and 300 °C. 3) Patterning of silicon dioxide thin film (3) by photolithography. Silicon. As a result of patterning the dioxide thin film (3) and applying it on the SiC coated samples, the junction (contact) areas of the structure were created. In the design of SiO contact zones, (i) the ratio of the conductive heat transfer area (Ar) to the conduction heat transfer area (AC) (AI/Ad) and (ii) the bending of the surfaces due to the difference between the vacuum inside the device and the atmospheric pressure in the external environment are critical parameters. Conductive heat transfer on SiOz surfaces However, choosing the contact surfaces as SiO2, which does not have high conductivity, keeps this mechanism less effective. Heat transfer by convection is neglected due to the vacuum gap (4) between the SiC surfaces (as there is no heat-carrying medium (e.g. gas) between them). Since it is aimed to examine the near-field radiation between the YAI platform (12), which is the subject of the invention, and SiC-coated Si environments, the Pir/AC ratio should be maximum in order to minimize the conduction heat transfer from the auxiliary SiO2 surfaces, which allow the near-field radiation to occur in a closed and integrated environment. It is essential to minimize the expected bending due to the pressure difference between the cavity and the external environment, to prevent the emitter (5)-collector (6) contact in extreme bending situations and to obtain as uniform a d distance as possible. In this context, 11 configurations have been modeled. The models that best meet both of the mentioned criteria are thin square walls (9), straight columns (10) and hexagonal honeycomb columns (ll) and a comparison model of thick square walls (8) are shown in Figures Right to 5d. The design of the photolithography mask used in the production of the sematized structures in Figures 5a-5d is shown in Figure 6. A photolithography mask containing the exact symmetry of the design in question was also produced and applied to the other stamp to be combined. 81813, a positive photoresist (PR), was used for photolithography and the following steps were carried out. i)Dehydration bake: Applied in the oven at 10 °C for 10 minutes. When the material reached room temperature, it was removed from the oven. ii) Spin coating: In order for the PR to adhere better to the sample, HDMS was applied to the surface by spin coating at 3000 rpm for 30 seconds. Afterwards, PR was coated with the same parameters. iii)Soft bake: Applied with a hot plate at 115 °C for 1 minute. iv) Exposure to UV light: Applied with EVG620 for 5 seconds. V)Developing: Applied with MF319 for 60 seconds. Vi)Hard bake: Applied in the oven at 10°C for 5 minutes. After step vi, the structure (1:7) was etched with SiO2 by dipping it into buffered hydrofluoric acid (buffered HF) until the sample temperature dropped to 70°C or below, and the sample was washed with deionized water after PR was removed by dipping it into PRS-2000. 4) Bonding of the patterned SiOz and SiC-coated Si wafer duo under vacuum. Wafer bonding is the permanent joining of two aligned wafers. In the production of the YAI platform (12) subject to the invention, fusion bonding technique was used to combine SiC coated Si wafers (emitter (5) and collector (6)) from the SiOz contact surface. The outer surface of the samples, on the inner surface of which the patterns shown in Figures 5a to 5d were applied by photolithography, were also patterned. The patterns transferred to the inner and outer surfaces of the building are shown schematically in Figure-3b and Figure-3c. The photolithography process for patterning purposes involves placing the material on a hot plate, placing it in ovens with various sample holders and subjecting it to the heating process, etc. Since it requires contact with the material due to the processes involved, there is a risk of contamination on the treated surfaces. However, fusion joining is extremely sensitive to roughness and particle contamination on the surfaces to be joined. Considering that both sides of the sample will contact various surfaces during the photolithography stage of the samples, it is important to protect the surfaces and minimize particle contamination. a.Fashion bonding Since fusion bonding depends on the structure and roughness of the surface to be joined, Imi process al. By chemical activation from SiO2 surfaces coated with PECVD, a2. By PECVD and plasma activation from SiO2 surfaces, a3. It was carried out by plasma activation from SiO2 surfaces grown on Si by thermal oxidation. get. Joining from PECVD SiOz contact surfaces (by chemical activation): In this investigation, a 200 nm thick silicon dioxide thin film (3), whose inner surface is as shown in Figures 10 to 5d, was coated and patterned directly on the Si wafer with PECVD. This sample is an unpatterned 200 nm PECVD silicon dioxide thin film. It is combined with (3) coated Si wafers. Silicon is used in this review due to the lack of direct effect of the silicon carbide thin film (2) in the bonding stage. carbide thin film (2) is not included. The assembly steps are summarized below. l-PECVD silicon dioxide thin film (3) coating (Since the coating was done before, the flake duo was cleaned in piranha solution to prevent contamination from the carrier box.) 2-Oxide densification: 1.5 at 300°C in EVGSZO was carried out under vacuum for one hour. 3- Chemical-mechanical polishing: Not done. 4- Megasonic cleaning: Not done. - Activation with plasma: Not done. Instead, chemical activation was performed with NH4OHzHgb:H2O (6:1:3) solution. The samples to be combined were kept in activation solution at 80 °C for 30 minutes. Afterwards, the samples were rinsed with deionized water for 5 minutes and dried under vacuum. 6-Fusion bonding: It was carried out with EVGSZOIS under vacuum by applying 10 kN force to the samples to be bonded at 300°C for 1.5 hours. 7-IR examination: Not done. 8-Annealing after bonding: Not done. 9- Characterization: At this stage, examination was performed with c-SAM (scanning acoustic microscope) at 200 MHz. It is shown in Figure 7 that the 10 kN force applied for joining did not cause the upper sample to collapse on the lower sample. The dark colored areas show the contact areas, and the light colored areas show the regions that do not come into contact with each other and have a vacuum environment in between. Particularly, coalescence occurred in the middle of the structure and towards the outer wall of the flake. After the examination to obtain a high-resolution (10 µm) c-SAM image, it was seen that the junction between the two flakes was not preserved. This high resolution review took 6 hours. For this reason, it can be said that after assembly, the integrated structure (7) remained assembled for less than 6 hours. a2. Joining from PECVD SiO2 contact surfaces (with plasma activation): For this process, Si flakes coated on a 50 nm silicon carbide thin film (2) were combined by activating with O2 plasma for 60 seconds after being patterned as shown in Figures 5a to 5d. Figures 8a and 8b show that the c-SAM characterization made as a result of fusion assembly shows that the flakes are partially fused. It has been observed that the joining is more smooth, especially in the area where the columns are located, compared to other regions. As in the al process, the union between these two was not permanent. a3. Thermal oxide (SiO2) joining from the contact surfaces (by plasma activation): In this process, Si flakes, on which a silicon dioxide thin film (3) with a thickness of 1.2 um was grown by thermal oxidation, were combined. In previous fusion bonding experiments, to release any gases trapped in the samples before bonding, the stamp pairs were first heated to 300 °C and then contacted by applying a force of 10 kN. In this experiment (a3), the flake pair was first brought into contact and then heated to 300 °C. Other process steps were kept the same. The c-SAM characterization result after fusion is shown in Figure-9. When Figure-9 is examined, it can be seen that the two stamps have been successfully and permanently joined. As can be seen from the dark color on the unpatterned part of the stamp, sufficient contact has been formed between the SiO2 surfaces. There is a good joint quality, especially in the upper left (thick square wall (8)) and lower right (columned (10)) structure. ) Obtaining the YAI platform (12) by cutting the integrated structure (7). The last step is to obtain 4 chips (YAI test sample, YAI platform (12)) with a surface of 3 cm x 3 cm by cutting the integrated structure (7). Since desired, the outer surface pattern shown in Figure-3c and the identifiers of the geometries in Figures-5a to 5d have been applied to the exterior of the integrated structure (7) in order to prevent the cutting process from damaging the chips and SiO2 walls. The integrated structure (7) was cut in line with the dashed lines shown in Figure 1. Flat cut (FC) cutting speed was applied as 1 mm/min in the process. Thanks to the silicon-based closed and integrated platform that is the subject of the invention, micro-nano scale heat transfer can be examined under atmospheric conditions, standard operating conditions, without requiring a vacuum environment other than the YAI platform (12). With the help of the patterned silicon dioxide thin film (3) surfaces on the YAI platform (12), a solution is provided to the distance and parallelism problems in the technique. In addition, considering the targeted experiments to be carried out on the 30 mm It provides physical convenience and applicability for the use of equipment. Since SiC supports surface phonon polaritons, it has been frequently examined in theoretical YAI studies and its positive effect on system efficiency has been presented. The use of SiC in the platform and its derivatives subject to the invention is advantageous due to its favorable properties such as high melting temperature, operability at high temperatures, thermal stability and mechanical strength, in addition to supporting surface phonon polaritons. TR TR TR

Claims (1)

1.CLAIMERS: It is a closed and integrated platform for examining thermal transfer at the micro-nano scale. Its features are; - an emitter (5) containing a silicon carbide thin film (2) coated on a silicon substrate (l), a collector (6) containing a silicon carbide thin film (2) coated on a silicon substrate (l), - an emitter (5) and When the silicon carbide thin films (2) are coated on the collector (6) and combined in a vacuum environment to ensure that the distance between the emitter (5) and collector (6) is smaller than the thermal radiation wavelength (A) and parallel to each other, the emitter (5) and collector (6) It is characterized by the fact that it contains silicon dioxide intermediate columns that will serve as the contact surface between ) and that the contact surfaces of the said intermediate columns are patterned. . It is a platform according to demand and its feature is; The pattern is a thick square wall (8), thin square wall (9), column (10) and/or hexagonal honeycomb (11) pattern. It is a platform according to claim 1 and its feature is; The silicon dioxide thin films (3) are combined in a way that they are mirror images of each other. It is a platform according to claim 1 and its feature is; The silicon substrates (l) of the emitter (5) and collector (6) contain codes that define the contact surface pattern. It is a platform according to claim 1 and its feature is; The surface dimensions are 3 cm x 3 cm. 6. It is the production method of a closed and integrated platform developed for the examination of thermal transfer at the micro-nano scale. Its features are; a. Obtaining the emitter (5) by coating a silicon carbide thin film (2) on the silicon substrate (1) and obtaining the collector (6) by coating a silicon carbide thin film (2) on the silicon substrate (1), b. Emitter (5) and coating the silicon carbide thin films (2) of the collector (6) with silicon dioxide thin film (3) to form intermediate columns, (L) patterning the surfaces of the said silicon dioxide thin film (3), and the contact surface being the patterned surface, emitter ( 5) and the collector (6) are combined and closed under vacuum so that the distance between them is less than the thermal radiation wavelength (h) and parallel to each other, and the resulting integrated structure (7) is cut and the individual YAI platform ( l2) is a method according to claim 6, and its feature is; in step c, with thick square wall (8), thin square wall (9), column (10) and/or hexagonal honeycomb (11) pattern. It is a method according to claim 6 and its feature is; In step a, the silicon carbide thin film (2) is coated with the RF magnetron sputtering technique. 9. It is a method according to claim 6, characterized in that; It is the coating of silicon carbide thin film (2) with an integrated SiC target by RF magnetron sputtering technique. 10. It is a method according to claim 6, characterized in that; It is the coating of silicon carbide thin film (2) with a monolithic SiC target by RF magnetron sputtering technique. 11. It is a method according to claim 6, characterized in that; In step b, the silicon dioxide thin film (3) is coated with plasma-assisted chemical vapor deposition technique. 12. It is a method according to claim 6, characterized in that; In step c, the surfaces of silicon dioxide thin film (3) are patterned using photolithography technique. 13. It is a method according to claim 6, characterized in that; In step d, the emitter (5) and collector (6) are combined with silicon dioxide contact surfaces coated with plasma-assisted chemical vapor deposition technique with chemical activation. 14. It is a method according to claim 6, characterized in that; In step d, the emitter (5) and collector (6) are combined with silicon dioxide contact surfaces coated with plasma-assisted chemical vapor deposition technique with plasma activation. 15. It is a method according to claim 6, characterized in that; In step d, the emitter (5) and collector (6) are joined on the thermal oxide (SiOz) contact surfaces by plasma activation. It is a method according to claim 6 and its feature is; In step e, 4 YAI platforms (12) with a surface area of 3 cm x 3 cm are obtained by cutting them from the combined integrated structure (7). TR TR TR