SU1733975A1 - Method of determination of electron temperature of plasma of glow discharge - Google Patents

Method of determination of electron temperature of plasma of glow discharge Download PDF

Info

Publication number
SU1733975A1
SU1733975A1 SU884426476A SU4426476A SU1733975A1 SU 1733975 A1 SU1733975 A1 SU 1733975A1 SU 884426476 A SU884426476 A SU 884426476A SU 4426476 A SU4426476 A SU 4426476A SU 1733975 A1 SU1733975 A1 SU 1733975A1
Authority
SU
USSR - Soviet Union
Prior art keywords
probe
potential
plasma
change
electron temperature
Prior art date
Application number
SU884426476A
Other languages
Russian (ru)
Inventor
Юрий Васильевич Кубарев
Петр Владимирович Коленько
Евгений Федорович Ковалев
Станислав Ефимович Росинский
Александр Александрович Флоридов
Владимир Николаевич Черник
Original Assignee
Научно-производственное объединение им.С.А.Лавочкина
Московский институт радиотехники, электроники и автоматики
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Научно-производственное объединение им.С.А.Лавочкина, Московский институт радиотехники, электроники и автоматики filed Critical Научно-производственное объединение им.С.А.Лавочкина
Priority to SU884426476A priority Critical patent/SU1733975A1/en
Application granted granted Critical
Publication of SU1733975A1 publication Critical patent/SU1733975A1/en

Links

Abstract

The invention relates to probe methods for the experimental study of a glow discharge plasma in gases and can be used to diagnose a stationary low-temperature plasma. The purpose of the invention is to simplify the determination of the electron temperature in the stationary state of the plasma. The purpose of the invention is achieved by varying the potential of a galvanically isolated single probe. According to the method, the probe currents are measured with a positive and negative change in the probe potential relative to the floating plasma potential, and the electron temperature is determined by the formula given in the description. 1 il.

Description

sl C

The invention relates to probe methods for the experimental study of glow discharge plasma in gases and can be used to diagnose a stationary low-temperature plasma.

The purpose of the invention is to simplify the determination of the electron temperature in the stationary state of the plasma.

The purpose of the invention is achieved by changing relative to the floating plasma potential the magnitude of the potential of a galvanically isolated single probe.

A single probe is isolated with an isolating capacitor, the total capacitance C of the probe and the isolating capacitor being determined from the condition

C (F),

where I is the maximum absolute current value of the probe with a positive or negative change in its potential, A;

AV is the absolute value of the change in potential, corresponding to I, B;

t is the duration of the change in potential. WITH.

The drawing shows the current-voltage characteristic of the probe and the values determined in the process of plasma diagnostics.

The following figures are shown in the drawing: V o the floating potential of the plasma; V0 + .AV - potential of the probe with its positive change; V0- A V - potential of a probe at its negative change; 11 - probe current at positive potential change; i is the probe current at a negative potential change.

The method is implemented as follows.

First, the floating potential of plasma V0 is determined, at which the probe current is equal to 0. Then, the probe currents And and 12 are measured with positive + V and negative

1 with

Sl)

about

v | SL

-V change in potential of the probe relative to the floating potential of the plasma.

The electron temperature is determined by the formula

Te-2AVJ | -t- | , {eV),

where is the absolute value of the change in potential, B;

And - current probe with a positive change in potential, A;

2 - probe current with a negative change in potential, A.

Claims (1)

  1. The Invention Method for Determining the Electron Temperature of a Glow-Discharge Plasma, which consists in introducing a single probe into a plasma, changes the electrical potential of the probe, measures its current, which in order to simplify the determination of the electron temperature in the steady state plasma , single probe galvanically isolated from 0
    five
    by means of an isolating capacitor, the total capacitance C of the probe and the isolating capacitor being determined from the condition
    ).
    where I is the maximum absolute current value of the probe with a positive or negative change in its potential, A;
    D V is the absolute value of the change in potential, corresponding to I, B:
    t is the duration of the change in potential. WITH,
    and the electron temperature is determined by the formula
    And +12
    Te 2DU
    (eV)
    12-I
    where D V is the absolute value of the change in potential, V;
    I, is the probe current with a positive potential change, A;
    2 - probe current with a negative change in potential, A.
SU884426476A 1988-05-18 1988-05-18 Method of determination of electron temperature of plasma of glow discharge SU1733975A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU884426476A SU1733975A1 (en) 1988-05-18 1988-05-18 Method of determination of electron temperature of plasma of glow discharge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU884426476A SU1733975A1 (en) 1988-05-18 1988-05-18 Method of determination of electron temperature of plasma of glow discharge

Publications (1)

Publication Number Publication Date
SU1733975A1 true SU1733975A1 (en) 1992-05-15

Family

ID=21375460

Family Applications (1)

Application Number Title Priority Date Filing Date
SU884426476A SU1733975A1 (en) 1988-05-18 1988-05-18 Method of determination of electron temperature of plasma of glow discharge

Country Status (1)

Country Link
SU (1) SU1733975A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2738984A1 (en) * 1995-09-19 1997-03-21 Centre Nat Rech Scient Method and device for measuring an ion flow in a plasma

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Методы исследовани плазмы/Под ред. В. Лохте - Хольтгревена. М.: Мир, 1971, с. 480. *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2738984A1 (en) * 1995-09-19 1997-03-21 Centre Nat Rech Scient Method and device for measuring an ion flow in a plasma
WO1997011587A1 (en) * 1995-09-19 1997-03-27 Centre National De La Recherche Scientifique Method and device for measuring ion flow in a plasma

Similar Documents

Publication Publication Date Title
Langmuir The effect of space charge and residual gases on thermionic currents in high vacuum
Tanaka et al. Effects of charge injection and extraction on tree initiation in polyethylene
Boggs Partial discharge: overview and signal generation
Tihanyi et al. Influence of the floating substrate potential on the characteristics of ESFI MOS transistors
MacDonald Auger electron spectroscopy in scanning electron microscopy: Potential measurements
Sarges et al. Gramicidin A. IV. Primary sequence of valine and isoleucine Gramicidin A
Bartnikas Some observations on the character of corona discharges in short gap spaces
EP0241309A3 (en) Measurement of electroactive species in solution
Schultz et al. Mobilities of positive ions in some gas mixtures used in proportional and drift chambers
JPS59163826A (en) Dry etching method
JPS6027828B2 (en)
JPS5786569A (en) Ignition detective circuit
JPH023262A (en) Lead frame assembly and its working method
JPS5828750B2 (en)
SU1337934A2 (en) Method of analysis of impurities in gases
JPS5263663A (en) Gas electric discharge panel
CN105913984A (en) Device and method for processing surface of basin-type insulator by means of glow discharge fluorination
JPS5570862A (en) Transfer paper separating device in electronic copier
Smith et al. Space charge fields in afterglow plasmas
JPS62261974A (en) Method and device for testing semiconductor device
JPS64759A (en) Semiconductor for two-way controlled rectification
JPS6153728A (en) Etching end point judging method
ES2169345T3 (en) Procedure for preparation of fluorometile eter 1,1,1,3,3,3-hexafluoroisopropilico.
JPH0449651A (en) Mos(mis) type capacitor
JPS62145866A (en) Photoconductive sensor, method and apparatus for driving the same