SU155236A1 - - Google Patents

Info

Publication number
SU155236A1
SU155236A1 SU777725A SU777725A SU155236A1 SU 155236 A1 SU155236 A1 SU 155236A1 SU 777725 A SU777725 A SU 777725A SU 777725 A SU777725 A SU 777725A SU 155236 A1 SU155236 A1 SU 155236A1
Authority
SU
USSR - Soviet Union
Prior art keywords
disk
tungsten
contact
molybdenum
control electrode
Prior art date
Application number
SU777725A
Other languages
English (en)
Russian (ru)
Publication of SU155236A1 publication Critical patent/SU155236A1/ru

Links

SU777725A SU155236A1 (https=)

Publications (1)

Publication Number Publication Date
SU155236A1 true SU155236A1 (https=)

Family

ID=

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3489962A (en) * 1966-12-19 1970-01-13 Gen Electric Semiconductor switching device with emitter gate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3489962A (en) * 1966-12-19 1970-01-13 Gen Electric Semiconductor switching device with emitter gate

Similar Documents

Publication Publication Date Title
US5272108A (en) Method of manufacturing gallium nitride semiconductor light-emitting device
JP2596962B2 (ja) 半導体デバイス及びその製造方法
US4351706A (en) Electrochemically eroding semiconductor device
FR2736468A1 (fr) Transistor bipolaire a structure optimisee
US4098921A (en) Tantalum-gallium arsenide schottky barrier semiconductor device
SU155236A1 (https=)
GB1398006A (en) Semiconductor electroluminescent devices and to methods of making them
US3923975A (en) Tantalum-gallium arsenide schottky barrier semiconductor device
US2934685A (en) Transistors and method of fabricating same
US4062103A (en) Method for manufacturing a semiconductor device
US3431636A (en) Method of making diffused semiconductor devices
FR2502399A1 (fr) Dispositif a semi-conducteurs comportant un contact rapporte a faible resistance
US4080620A (en) Reverse switching rectifier and method for making same
JPH02192119A (ja) 電極形成方法
Dautremont‐Smith et al. A nonalloyed, low specific resistance Ohmic contact to n‐InP
US4414076A (en) Low resistance ohmic contact
US5148254A (en) Finely controlled semiconductor device
KR100197154B1 (ko) 전계방출소자 제조방법
JP2019125743A (ja) 半導体装置の製造方法
US4131525A (en) Method of manufacturing a body having a gold pattern and body manufactured according to the method
KR900008408B1 (ko) Iii-v족 화합물 반도체소자의 전극 형성방법
GB2057760A (en) Integrated circuit device and method of making the same
JPS6125221B2 (https=)
KR950008855B1 (ko) 포토 다이오드의 제조방법
JPH02122628A (ja) 半導体装置の製造方法