SG74720A1 - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
SG74720A1
SG74720A1 SG1999001836A SG1999001836A SG74720A1 SG 74720 A1 SG74720 A1 SG 74720A1 SG 1999001836 A SG1999001836 A SG 1999001836A SG 1999001836 A SG1999001836 A SG 1999001836A SG 74720 A1 SG74720 A1 SG 74720A1
Authority
SG
Singapore
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Application number
SG1999001836A
Other languages
English (en)
Inventor
Kouchi Yasuyuki
Nakanishi Hideyuki
Yuri Masaaki
Yoshikawa Akio
Ishiguro Hisanori
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of SG74720A1 publication Critical patent/SG74720A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
SG1999001836A 1998-04-23 1999-04-15 Semiconductor laser device SG74720A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11316098 1998-04-23
JP11047609A JP2000012950A (ja) 1998-04-23 1999-02-25 半導体レ―ザ装置

Publications (1)

Publication Number Publication Date
SG74720A1 true SG74720A1 (en) 2000-08-22

Family

ID=26387777

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1999001836A SG74720A1 (en) 1998-04-23 1999-04-15 Semiconductor laser device

Country Status (5)

Country Link
US (1) US6292500B1 (ja)
JP (1) JP2000012950A (ja)
CN (1) CN1234639A (ja)
SG (1) SG74720A1 (ja)
TW (1) TW419873B (ja)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050825A (ja) * 2000-08-01 2002-02-15 Sharp Corp 半導体レーザ装置の保護回路
AU2002223488A1 (en) * 2001-10-15 2003-05-12 Infineon Technologies Ag Laser diode assembly and device for operating a laser diode
DE102004038405A1 (de) * 2004-08-07 2006-03-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Quantenkaskadenlaser mit reduzierter Verlustleistung
JP4438842B2 (ja) * 2007-08-31 2010-03-24 セイコーエプソン株式会社 半導体発光素子のための駆動回路およびこれを用いた光源装置、照明装置、モニタ装置、画像表示装置
US20090072269A1 (en) * 2007-09-17 2009-03-19 Chang Soo Suh Gallium nitride diodes and integrated components
JP5307466B2 (ja) 2008-07-29 2013-10-02 ソニー株式会社 半導体レーザ及びその駆動方法、並びに、半導体レーザ装置
JP2010205810A (ja) * 2009-03-02 2010-09-16 Sony Corp 半導体レーザ素子の駆動方法及び半導体レーザ装置
JP2011018784A (ja) * 2009-07-09 2011-01-27 Sony Corp 半導体レーザ素子及びその駆動方法、並びに、半導体レーザ装置
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
JP2012119637A (ja) * 2010-12-03 2012-06-21 Sumitomo Electric Device Innovations Inc 光半導体装置の製造方法
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245992B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
WO2015009514A1 (en) 2013-07-19 2015-01-22 Transphorm Inc. Iii-nitride transistor including a p-type depleting layer
CN103904553B (zh) * 2014-03-13 2017-05-03 深圳市大京大科技有限公司 贴片式激光器
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
CN108604597B (zh) 2016-01-15 2021-09-17 创世舫电子有限公司 具有al(1-x)sixo栅极绝缘体的增强模式iii-氮化物器件
US10224401B2 (en) 2016-05-31 2019-03-05 Transphorm Inc. III-nitride devices including a graded depleting layer
CN107528212B (zh) * 2017-09-13 2019-09-17 中国电子科技集团公司第十三研究所 一种多路集成窄脉冲半导体激光器
IT202000013084A1 (it) 2020-06-03 2021-12-03 Opera Ip Ltd Procedimento per realizzare un diffusore ceramico astiforme e diffusore ceramico astiforme per diffondere una sostanza volatile
CN113922206A (zh) * 2021-10-09 2022-01-11 探维科技(北京)有限公司 一种激光雷达发射装置和方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5121153A (ja) 1974-08-14 1976-02-20 Ishizuka Denshi Kk Saajidenatsukyushukairo
JPS5298956A (en) 1976-02-16 1977-08-19 Toshiba Corp Over-voltage protection device of semi-conductor power convertor
JPS54140482A (en) 1978-04-21 1979-10-31 Nec Corp Semiconductor device
JPS58162085A (ja) 1982-03-19 1983-09-26 Matsushita Electric Ind Co Ltd 保護回路
JPS58165388A (ja) 1982-03-26 1983-09-30 Hitachi Ltd 保護回路付半導体レ−ザ
JPS6086036A (ja) 1983-10-18 1985-05-15 Seiko Epson Corp 石英ガラスの製造方法
JPS6122364A (ja) 1984-07-10 1986-01-30 Fujitsu Ltd 現像装置
JPS6348885A (ja) 1986-08-19 1988-03-01 Fujitsu Ltd レ−ザダイオ−ド駆動回路
JPH0758819B2 (ja) 1987-09-25 1995-06-21 株式会社東芝 半導体レーザ駆動装置
JP2854347B2 (ja) 1989-11-08 1999-02-03 富士通株式会社 レーザーダイオード保護回路
US5521107A (en) * 1991-02-16 1996-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming a field-effect transistor including anodic oxidation of the gate
JPH0621887A (ja) 1992-07-01 1994-01-28 Matsushita Electric Ind Co Ltd レーザダイオード保護装置
CN1052568C (zh) * 1992-07-06 2000-05-17 株式会社半导体能源研究所 形成半导体器件的方法
JPH0685249A (ja) 1992-09-02 1994-03-25 Kawasaki Steel Corp Ｍｏｓ型半導体装置の入力保護回路
JPH06196746A (ja) * 1992-12-25 1994-07-15 Canon Inc 光電変換装置、駆動回路、半導体発光素子駆動回路、記憶装置、及びシーケンシャルアクセスメモリー
TW247368B (en) * 1993-09-29 1995-05-11 Seiko Epuson Co Current regulating semiconductor integrate circuit device and fabrication method of the same
US6005266A (en) * 1997-03-13 1999-12-21 The Trustees Of Princeton University Very low leakage JFET for monolithically integrated arrays

Also Published As

Publication number Publication date
TW419873B (en) 2001-01-21
US6292500B1 (en) 2001-09-18
CN1234639A (zh) 1999-11-10
JP2000012950A (ja) 2000-01-14

Similar Documents

Publication Publication Date Title
SG74720A1 (en) Semiconductor laser device
GB9920418D0 (en) Semiconductor devices
IL139532A0 (en) Semiconductor device
EP1143536A4 (en) SEMICONDUCTOR COMPONENT
GB9911467D0 (en) Semiconductor devices
SG81289A1 (en) Semiconductor device
AU5998699A (en) Semiconductor device
GB2338344B (en) Semiconductor device
GB2344461B (en) Semiconductor devices
TW435883U (en) Semiconductor laser device
GB2323968B (en) Semiconductor device
GB0030015D0 (en) Semiconductor laser device
EP1045496A4 (en) SEMICONDUCTOR LASER DEVICE
GB2341722B (en) An optical semiconductor device
GB9820567D0 (en) Semiconductor device
GB2341275B (en) Semiconductor devices
GB2344456B (en) Semiconductor devices
GB9827492D0 (en) A semiconductor laser device
EP1039547A4 (en) SEMICONDUCTOR DEVICE
EP1174967A4 (en) SEMICONDUCTOR LASER DEVICE
GB9826516D0 (en) Semiconductor devices
SG75137A1 (en) Semiconductor laser device
GB2344457B (en) Semiconductor devices
GB9920173D0 (en) Semiconductor laser
AU2640499A (en) Semiconductor device