SG66357A1 - Multiple individual kelvin emitter connections to reduce current flow through parasitic diode - Google Patents

Multiple individual kelvin emitter connections to reduce current flow through parasitic diode

Info

Publication number
SG66357A1
SG66357A1 SG1997000699A SG1997000699A SG66357A1 SG 66357 A1 SG66357 A1 SG 66357A1 SG 1997000699 A SG1997000699 A SG 1997000699A SG 1997000699 A SG1997000699 A SG 1997000699A SG 66357 A1 SG66357 A1 SG 66357A1
Authority
SG
Singapore
Prior art keywords
current flow
parasitic diode
multiple individual
reduce current
emitter connections
Prior art date
Application number
SG1997000699A
Other languages
English (en)
Inventor
Ajit Dabhashi
Tyler Fure
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of SG66357A1 publication Critical patent/SG66357A1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
SG1997000699A 1996-03-25 1997-03-12 Multiple individual kelvin emitter connections to reduce current flow through parasitic diode SG66357A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1402296P 1996-03-25 1996-03-25

Publications (1)

Publication Number Publication Date
SG66357A1 true SG66357A1 (en) 1999-07-20

Family

ID=21763077

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997000699A SG66357A1 (en) 1996-03-25 1997-03-12 Multiple individual kelvin emitter connections to reduce current flow through parasitic diode

Country Status (8)

Country Link
US (1) US5838185A (zh)
JP (1) JPH1014250A (zh)
DE (1) DE19709233A1 (zh)
FR (1) FR2747248B1 (zh)
GB (1) GB2311669B (zh)
IT (1) IT1290577B1 (zh)
SG (1) SG66357A1 (zh)
TW (1) TW319910B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG66453A1 (en) * 1997-04-23 1999-07-20 Int Rectifier Corp Resistor in series with bootstrap diode for monolithic gate device
DE10043921A1 (de) * 2000-09-06 2002-03-21 Infineon Technologies Ag Schaltungsanordnung
JP4531276B2 (ja) * 2001-02-27 2010-08-25 三菱電機株式会社 半導体装置
JP4847707B2 (ja) * 2005-03-10 2011-12-28 三菱電機株式会社 電力用半導体装置
EP2690773B1 (en) * 2012-07-25 2015-11-18 Dialog Semiconductor GmbH Bypass for on-chip voltage regulator
CN116073634A (zh) * 2023-01-13 2023-05-05 华为数字能源技术有限公司 光伏逆变器、直流变换电路和逆变电路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3420535C2 (de) * 1984-06-01 1986-04-30 Anton Piller GmbH & Co KG, 3360 Osterode Halbleiter-Modul für eine schnelle Schaltanordnung
JP2560436Y2 (ja) * 1989-08-23 1998-01-21 株式会社東海理化電機製作所 モータ駆動回路
US5170337A (en) * 1992-01-29 1992-12-08 General Electric Company Low-inductance package for multiple paralleled devices operating at high frequency
US5544038A (en) * 1992-09-21 1996-08-06 General Electric Company Synchronous rectifier package for high-efficiency operation
SG44755A1 (en) * 1992-10-02 1997-12-19 Koninkl Philips Electronics Nv Drive circuit for a flyback converter with switching transistors in bridge arrangement
EP0609528A1 (en) * 1993-02-01 1994-08-10 Motorola, Inc. Low inductance semiconductor package
US5373201A (en) * 1993-02-02 1994-12-13 Motorola, Inc. Power transistor
US5495154A (en) * 1993-04-29 1996-02-27 Sgs-Thomson Microelectronics, Inc. Method and apparatus for Kelvin current sensing in a multi-phase driver for a polyphase DC motor
EP0666703A1 (en) * 1994-02-08 1995-08-09 HUANG, Wen-Liang Power transistor driving circuit of electromagnetic induction heating device

Also Published As

Publication number Publication date
ITMI970507A1 (it) 1998-09-07
GB2311669B (en) 2000-05-10
JPH1014250A (ja) 1998-01-16
GB9705901D0 (en) 1997-05-07
GB2311669A (en) 1997-10-01
FR2747248A1 (fr) 1997-10-10
FR2747248B1 (fr) 2000-05-05
US5838185A (en) 1998-11-17
TW319910B (zh) 1997-11-11
IT1290577B1 (it) 1998-12-10
DE19709233A1 (de) 1997-10-30

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