SG154427A1 - Isolation structure for a memory cell using a12o3 dielectric - Google Patents

Isolation structure for a memory cell using a12o3 dielectric

Info

Publication number
SG154427A1
SG154427A1 SG200904336-5A SG2009043365A SG154427A1 SG 154427 A1 SG154427 A1 SG 154427A1 SG 2009043365 A SG2009043365 A SG 2009043365A SG 154427 A1 SG154427 A1 SG 154427A1
Authority
SG
Singapore
Prior art keywords
isolation
memory cell
dielectric
region
exemplary embodiment
Prior art date
Application number
SG200904336-5A
Other languages
English (en)
Inventor
Chandra Mouli
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG154427A1 publication Critical patent/SG154427A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
  • Inorganic Insulating Materials (AREA)
SG200904336-5A 2004-06-23 2005-06-21 Isolation structure for a memory cell using a12o3 dielectric SG154427A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/873,226 US7282409B2 (en) 2004-06-23 2004-06-23 Isolation structure for a memory cell using Al2O3 dielectric

Publications (1)

Publication Number Publication Date
SG154427A1 true SG154427A1 (en) 2009-08-28

Family

ID=35004216

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200904336-5A SG154427A1 (en) 2004-06-23 2005-06-21 Isolation structure for a memory cell using a12o3 dielectric

Country Status (10)

Country Link
US (4) US7282409B2 (zh)
EP (1) EP1766677B1 (zh)
JP (1) JP5107034B2 (zh)
KR (1) KR100875349B1 (zh)
CN (1) CN100508161C (zh)
AT (1) ATE493758T1 (zh)
DE (1) DE602005025635D1 (zh)
SG (1) SG154427A1 (zh)
TW (1) TWI301304B (zh)
WO (1) WO2006007462A1 (zh)

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US7732275B2 (en) * 2007-03-29 2010-06-08 Sandisk Corporation Methods of forming NAND flash memory with fixed charge
TWI413240B (zh) * 2007-05-07 2013-10-21 Sony Corp A solid-state imaging device, a manufacturing method thereof, and an image pickup device
US8481953B2 (en) 2008-08-21 2013-07-09 The United States Of America, As Represented By The Secretary Of The Navy Methods and systems of isolating segmented radiation detectors using alumina
US8278691B2 (en) * 2008-12-11 2012-10-02 Micron Technology, Inc. Low power memory device with JFET device structures
KR101063567B1 (ko) 2011-06-24 2011-09-07 권의필 Ｍｏｓ 디바이스 및 그 제조방법
US8633564B2 (en) * 2011-12-02 2014-01-21 Micron Technology, Inc. Semicondutor isolation structure
KR101144440B1 (ko) 2012-02-22 2012-05-10 권의필 비휘발성 메모리 및 그 제조방법
US8988142B2 (en) * 2013-03-10 2015-03-24 Microchip Technology Incorporated Integrated high voltage isolation using low value capacitors
US10361195B2 (en) * 2014-09-04 2019-07-23 Samsung Electronics Co., Ltd. Semiconductor device with an isolation gate and method of forming
US9224740B1 (en) 2014-12-11 2015-12-29 Globalfoundries Inc. High-K dielectric structure for deep trench isolation
US9985345B2 (en) 2015-04-10 2018-05-29 Apple Inc. Methods for electrically isolating areas of a metal body
US9825031B1 (en) * 2016-08-05 2017-11-21 Globalfoundries Inc. Methods of forming a high-k contact liner to improve effective via separation distance and the resulting devices
US10790008B2 (en) 2017-08-29 2020-09-29 Micron Technology, Inc. Volatile memory device with 3-D structure including vertical pillars and memory cells vertically stacked one over anoher in multiple levels
US11114443B2 (en) * 2019-08-29 2021-09-07 Micron Technology, Inc. Semiconductor structure formation

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Also Published As

Publication number Publication date
DE602005025635D1 (de) 2011-02-10
WO2006007462A1 (en) 2006-01-19
US20050287739A1 (en) 2005-12-29
TWI301304B (en) 2008-09-21
KR100875349B1 (ko) 2008-12-22
EP1766677A1 (en) 2007-03-28
US20060205156A1 (en) 2006-09-14
US8084806B2 (en) 2011-12-27
CN100508161C (zh) 2009-07-01
US20120083093A1 (en) 2012-04-05
JP5107034B2 (ja) 2012-12-26
ATE493758T1 (de) 2011-01-15
US8278182B2 (en) 2012-10-02
US7282409B2 (en) 2007-10-16
CN101006575A (zh) 2007-07-25
US20060216892A1 (en) 2006-09-28
TW200614417A (en) 2006-05-01
JP2008504685A (ja) 2008-02-14
KR20070020137A (ko) 2007-02-16
EP1766677B1 (en) 2010-12-29

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