SG135993A1 - Components having a film structure and methods of forming components having a film structure - Google Patents
Components having a film structure and methods of forming components having a film structureInfo
- Publication number
- SG135993A1 SG135993A1 SG200601751-1A SG2006017511A SG135993A1 SG 135993 A1 SG135993 A1 SG 135993A1 SG 2006017511 A SG2006017511 A SG 2006017511A SG 135993 A1 SG135993 A1 SG 135993A1
- Authority
- SG
- Singapore
- Prior art keywords
- layer
- film structure
- components
- methods
- nickel
- Prior art date
Links
Abstract
A method of forming a component having a film structure comprises thermally oxidising a first layer of a silicon substrate to form a compressive thermal oxidization silicon dioxide layer; and applying a layer comprising a nickel-titanium alloy to the first layer such that the first layer is located between the layer comprising a nickel- titanium alloy and the substrate. There is also disclosed a method of forming a component having a film structure comprising applying a first layer to a substrate to form an adhesive layer and applying a layer comprising a nickel-titanium alloy to the first layer such that the first layer is located between the layer comprising a nickel-titanium alloy and the substrate. There is further disclosed a component formed according to these methods and MEMS devices formed according to these methods.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200601751-1A SG135993A1 (en) | 2006-03-20 | 2006-03-20 | Components having a film structure and methods of forming components having a film structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200601751-1A SG135993A1 (en) | 2006-03-20 | 2006-03-20 | Components having a film structure and methods of forming components having a film structure |
Publications (1)
Publication Number | Publication Date |
---|---|
SG135993A1 true SG135993A1 (en) | 2007-10-29 |
Family
ID=38805531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200601751-1A SG135993A1 (en) | 2006-03-20 | 2006-03-20 | Components having a film structure and methods of forming components having a film structure |
Country Status (1)
Country | Link |
---|---|
SG (1) | SG135993A1 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040252164A1 (en) * | 2003-06-10 | 2004-12-16 | Samsung Electronics Co., Ltd. | Microactuator and fluid transfer apparatus using the same |
US20060038643A1 (en) * | 2004-08-20 | 2006-02-23 | Palo Alto Research Center Incorporated | Stressed material and shape memory material MEMS devices and methods for manufacturing |
-
2006
- 2006-03-20 SG SG200601751-1A patent/SG135993A1/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040252164A1 (en) * | 2003-06-10 | 2004-12-16 | Samsung Electronics Co., Ltd. | Microactuator and fluid transfer apparatus using the same |
US20060038643A1 (en) * | 2004-08-20 | 2006-02-23 | Palo Alto Research Center Incorporated | Stressed material and shape memory material MEMS devices and methods for manufacturing |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2011008925A3 (en) | Methods for forming dielectric layers | |
TW200937586A (en) | Flexible substrate, method of fabricating the same, and thin film transistor using the same | |
TW200631782A (en) | Structure and method of thermal stress compensation | |
TW200615501A (en) | Thermal interface incorporating nanotubes | |
TWI373106B (en) | Microelectronic substrate including embedded components and spacer layer and method of forming same | |
WO2011081308A3 (en) | Hydrogen sensor and method for manufacturing same | |
WO2007046560A3 (en) | Inorganic substrate with a thin silica type glass layer, method of manufacturing the aforementioned substrate, coating agent, and a semiconductor device | |
MX2010009789A (en) | Reflective article. | |
DE602007000498D1 (en) | Silicon-containing, film-forming composition, silicon-containing film, silicon-containing, film-carrying substrate and structuring method | |
EP2040521A3 (en) | Method of manufacturing substrate | |
WO2006127163A3 (en) | Method of detachable direct bonding at low temperatures | |
WO2010112358A3 (en) | Method for coating a surface of a component | |
WO2010012548A3 (en) | Encapsulation, mems and method of selective encapsulation | |
JP2009135465A5 (en) | ||
SG139678A1 (en) | Method for producing bonded wafer | |
DE602008001711D1 (en) | Method of manufacturing mechanical components of MEMS or NEMS structures in monocrystalline silicon | |
TW200631078A (en) | A method of making a semiconductor structure for high power semiconductor devices | |
GB2508305A (en) | Silicide micromechanical device and methods to fabricate same | |
WO2008142980A1 (en) | Two-direction shape-memory alloy thin film actuator and method for manufacturing shape-memory alloy thin film used in the actuator | |
WO2006132382A3 (en) | Method of manufacturing a film | |
HU0600488D0 (en) | Method for producing micromechanical elements can be integrated into cmos technology, carrying monolith si and monolith sio produced by porous si micromanufacturing process | |
WO2007047275A3 (en) | Reducing thermal expansion effects in semiconductor packages | |
WO2010007560A3 (en) | Semiconductor device and manufacturing method | |
SG157317A1 (en) | Method of forming a nanostructure | |
WO2008098567A3 (en) | Method for transferring surface structures such as interference layers, holograms, and other highly refractive optical microstructures |