SG121715A1 - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

Info

Publication number
SG121715A1
SG121715A1 SG200203262A SG200203262A SG121715A1 SG 121715 A1 SG121715 A1 SG 121715A1 SG 200203262 A SG200203262 A SG 200203262A SG 200203262 A SG200203262 A SG 200203262A SG 121715 A1 SG121715 A1 SG 121715A1
Authority
SG
Singapore
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Application number
SG200203262A
Other languages
English (en)
Original Assignee
Semiconductor Energy Lab
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab, Sharp Kk filed Critical Semiconductor Energy Lab
Publication of SG121715A1 publication Critical patent/SG121715A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SG200203262A 2001-06-28 2002-05-31 Semiconductor device and method of manufacturing the same SG121715A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001195869A JP3961240B2 (ja) 2001-06-28 2001-06-28 半導体装置の作製方法

Publications (1)

Publication Number Publication Date
SG121715A1 true SG121715A1 (en) 2006-05-26

Family

ID=19033775

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200203262A SG121715A1 (en) 2001-06-28 2002-05-31 Semiconductor device and method of manufacturing the same

Country Status (8)

Country Link
US (2) US6998641B2 (ja)
EP (1) EP1271656A3 (ja)
JP (1) JP3961240B2 (ja)
KR (1) KR100913929B1 (ja)
CN (1) CN1293647C (ja)
MY (1) MY139053A (ja)
SG (1) SG121715A1 (ja)
TW (1) TW557515B (ja)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6737302B2 (en) * 2001-10-31 2004-05-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for field-effect transistor
JP3961310B2 (ja) 2002-02-21 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4115158B2 (ja) * 2002-04-24 2008-07-09 シャープ株式会社 半導体装置およびその製造方法
KR100499956B1 (ko) * 2002-10-24 2005-07-05 전자부품연구원 양자채널이 형성된 모스펫을 이용한 포토디텍터 및 그제조방법
JP4115283B2 (ja) * 2003-01-07 2008-07-09 シャープ株式会社 半導体装置およびその製造方法
KR100542986B1 (ko) 2003-04-29 2006-01-20 삼성에스디아이 주식회사 박막 트랜지스터, 상기 박막 트랜지스터 제조 방법 및 이를 이용한 표시장치
KR100543004B1 (ko) 2003-09-18 2006-01-20 삼성에스디아이 주식회사 평판표시장치
JP2008504714A (ja) * 2004-06-28 2008-02-14 ラム　リサーチ　コーポレーション 基板を洗浄及びエッチングするシステム及び方法
TWI336951B (en) * 2005-05-19 2011-02-01 Au Optronics Corp Method of forming thin film transistor
KR100741976B1 (ko) 2005-08-25 2007-07-23 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
CN101263604B (zh) * 2005-09-16 2012-05-30 夏普株式会社 薄膜晶体管
KR100770269B1 (ko) * 2006-05-18 2007-10-25 삼성에스디아이 주식회사 박막트랜지스터의 제조방법
KR100722106B1 (ko) * 2006-06-09 2007-05-25 삼성에스디아이 주식회사 박막 트랜지스터 및 그 제조방법
US7781768B2 (en) * 2006-06-29 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing the same, and electronic device having the same
JP2008028070A (ja) * 2006-07-20 2008-02-07 Sumco Corp 貼り合わせウェーハの製造方法
US7851277B2 (en) * 2006-12-05 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
KR100878284B1 (ko) 2007-03-09 2009-01-12 삼성모바일디스플레이주식회사 박막트랜지스터와 그 제조 방법 및 이를 구비한유기전계발광표시장치
KR100858822B1 (ko) * 2007-05-11 2008-09-17 삼성에스디아이 주식회사 박막 트랜지스터, 이를 포함한 유기 발광 표시장치 및 유기발광 표시장치의 제조방법
KR100875432B1 (ko) 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR100848341B1 (ko) * 2007-06-13 2008-07-25 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100889626B1 (ko) 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법
KR100889627B1 (ko) * 2007-08-23 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치
US7868329B2 (en) * 2008-02-21 2011-01-11 Chi Mei El Corp. Semiconductor device and method for fabricating the same
KR100982310B1 (ko) 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100989136B1 (ko) * 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
US7939389B2 (en) * 2008-04-18 2011-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101002666B1 (ko) 2008-07-14 2010-12-21 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101030027B1 (ko) 2008-12-18 2011-04-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치
KR101711191B1 (ko) * 2010-10-28 2017-03-02 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
JP2015023080A (ja) * 2013-07-17 2015-02-02 ソニー株式会社 放射線撮像装置および放射線撮像表示システム
CN106505067B (zh) * 2015-09-08 2019-10-25 鸿富锦精密工业（深圳）有限公司 互补金属氧化物半导体装置及制造方法
US10937665B2 (en) 2016-09-30 2021-03-02 Intel Corporation Methods and apparatus for gettering impurities in semiconductors
KR20200145974A (ko) * 2019-06-21 2020-12-31 삼성전자주식회사 반도체 소자 및 그 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5501989A (en) * 1993-03-22 1996-03-26 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer
JP2000133594A (ja) * 1998-08-18 2000-05-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2001155995A (ja) * 1999-11-24 2001-06-08 Sharp Corp 半導体装置の製造方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
TW264575B (ja) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
JP2873660B2 (ja) * 1994-01-08 1999-03-24 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
JP3539821B2 (ja) * 1995-03-27 2004-07-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100265179B1 (ko) 1995-03-27 2000-09-15 야마자끼 순페이 반도체장치와 그의 제작방법
TW556263B (en) 1996-07-11 2003-10-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3662371B2 (ja) 1996-10-15 2005-06-22 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法及び薄膜トランジスタ
JP3844552B2 (ja) * 1997-02-26 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3376247B2 (ja) * 1997-05-30 2003-02-10 株式会社半導体エネルギー研究所 薄膜トランジスタ及び薄膜トランジスタを用いた半導体装置
JP3844561B2 (ja) * 1997-06-10 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4017706B2 (ja) * 1997-07-14 2007-12-05 株式会社半導体エネルギー研究所 半導体装置
JP3844566B2 (ja) 1997-07-30 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6218219B1 (en) * 1997-09-29 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6294441B1 (en) 1998-08-18 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4531175B2 (ja) * 1998-12-03 2010-08-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1006589B1 (en) 1998-12-03 2012-04-11 Semiconductor Energy Laboratory Co., Ltd. MOS thin film transistor and method of fabricating same
US6639244B1 (en) * 1999-01-11 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4860021B2 (ja) * 1999-01-11 2012-01-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE69942442D1 (de) 1999-01-11 2010-07-15 Semiconductor Energy Lab Halbleiteranordnung mit Treiber-TFT und Pixel-TFT auf einem Substrat
US6777716B1 (en) * 1999-02-12 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and method of manufacturing therefor
JP2001007342A (ja) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6646287B1 (en) * 1999-11-19 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with tapered gate and insulating film
US6882012B2 (en) * 2000-02-28 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
TW515104B (en) * 2000-11-06 2002-12-21 Semiconductor Energy Lab Electro-optical device and method of manufacturing the same
US6831299B2 (en) * 2000-11-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7151017B2 (en) * 2001-01-26 2006-12-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5501989A (en) * 1993-03-22 1996-03-26 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer
JP2000133594A (ja) * 1998-08-18 2000-05-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2001155995A (ja) * 1999-11-24 2001-06-08 Sharp Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
EP1271656A3 (en) 2005-03-30
KR20030003043A (ko) 2003-01-09
CN1395319A (zh) 2003-02-05
US20050170573A1 (en) 2005-08-04
EP1271656A2 (en) 2003-01-02
CN1293647C (zh) 2007-01-03
KR100913929B1 (ko) 2009-08-27
JP2003017500A (ja) 2003-01-17
US20030025158A1 (en) 2003-02-06
US6998641B2 (en) 2006-02-14
MY139053A (en) 2009-08-28
JP3961240B2 (ja) 2007-08-22
TW557515B (en) 2003-10-11
US7625786B2 (en) 2009-12-01

Similar Documents

Publication Publication Date Title
SG121715A1 (en) Semiconductor device and method of manufacturing the same
GB2387967B (en) Semiconductor device and method of manufacturing the same
SG100769A1 (en) Semiconductor device and method of manufacturing the same
SG118117A1 (en) Semiconductor device and manufacturing method thereof
GB2359191B (en) Semiconductor device and method of manufacturing the same
GB2373922B (en) CMOS semiconductor device, and method of manufacturing the same
SG96201A1 (en) Flip-chip type semiconductor device and method of manufacturing the same
HK1085052A1 (en) Semiconductor device and method of manufacturing the same
SG121710A1 (en) Semiconductor device and fabrication method thereof
TWI371061B (en) Semiconductor device and method of fabricating the same
SG118068A1 (en) Semiconductor device and manufacturing method thereof
SG112805A1 (en) Semiconductor device and manufacturing method thereof
IL156619A0 (en) Semiconductor device and its manufacturing method
HK1052408A1 (en) Semiconductor device having fuse and its manufacture method
GB2393325B (en) Semiconductor device and manufacturing method thereof
GB2392557B (en) Semiconductor device and method of manufacturing the same
GB2373635B (en) Semiconductor device and method of manufacturing the same
AU2003274568A8 (en) Flexible semiconductor device and method of manufacturing the same
EP1424409A4 (en) SEMICONDUCTOR WAFER AND PRODUCTION THEREOF
SG84573A1 (en) Semiconductor device and method of fabricating the same
SG89393A1 (en) Semiconductor device and process of manufacturing the same
TWI348748B (en) Semiconductor device and method of fabricating the same
GB2374705B (en) Semiconductor memory device and manufacturing method thereof
GB0130018D0 (en) Semiconductor devices and their manufacture
EP1363333A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME