SG11202012061QA - Embedded particle depth binning based on multiple scattering signals - Google Patents

Embedded particle depth binning based on multiple scattering signals

Info

Publication number
SG11202012061QA
SG11202012061QA SG11202012061QA SG11202012061QA SG11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA
Authority
SG
Singapore
Prior art keywords
multiple scattering
scattering signals
embedded particle
particle depth
binning based
Prior art date
Application number
SG11202012061QA
Other languages
English (en)
Inventor
Haiping Zhang
Alex Yu (Gang)
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11202012061QA publication Critical patent/SG11202012061QA/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95607Inspecting patterns on the surface of objects using a comparative method
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21Polarisation-affecting properties
    • G01N21/211Ellipsometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N21/4795Scattering, i.e. diffuse reflection spatially resolved investigating of object in scattering medium
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • G01N21/9505Wafer internal defects, e.g. microcracks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4704Angular selective
    • G01N2021/4707Forward scatter; Low angle scatter
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4704Angular selective
    • G01N2021/4711Multiangle measurement
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4704Angular selective
    • G01N2021/4726Detecting scatter at 90°
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4792Polarisation of scatter light
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/8422Investigating thin films, e.g. matrix isolation method
    • G01N2021/8438Mutilayers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8883Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95607Inspecting patterns on the surface of objects using a comparative method
    • G01N2021/95615Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/06Illumination; Optics
    • G01N2201/063Illuminating optical parts
    • G01N2201/0638Refractive parts

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Optics & Photonics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating Or Analysing Biological Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG11202012061QA 2018-06-19 2019-06-11 Embedded particle depth binning based on multiple scattering signals SG11202012061QA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862687123P 2018-06-19 2018-06-19
US16/165,742 US10732130B2 (en) 2018-06-19 2018-10-19 Embedded particle depth binning based on multiple scattering signals
PCT/US2019/036432 WO2019245785A1 (en) 2018-06-19 2019-06-11 Embedded particle depth binning based on multiple scattering signals

Publications (1)

Publication Number Publication Date
SG11202012061QA true SG11202012061QA (en) 2021-01-28

Family

ID=68840629

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202012061QA SG11202012061QA (en) 2018-06-19 2019-06-11 Embedded particle depth binning based on multiple scattering signals

Country Status (8)

Country Link
US (1) US10732130B2 (ja)
JP (1) JP7236473B2 (ja)
KR (1) KR102495449B1 (ja)
CN (1) CN112219113B (ja)
IL (1) IL279286B2 (ja)
SG (1) SG11202012061QA (ja)
TW (1) TWI785253B (ja)
WO (1) WO2019245785A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10732130B2 (en) * 2018-06-19 2020-08-04 Kla-Tencor Corporation Embedded particle depth binning based on multiple scattering signals
US11668658B2 (en) * 2018-10-08 2023-06-06 Araz Yacoubian Multi-parameter inspection apparatus for monitoring of additive manufacturing parts
JP7206020B2 (ja) 2020-11-17 2023-01-17 マシンビジョンライティング株式会社 画像観察装置及びその照明光学系
WO2023023701A1 (en) * 2021-08-24 2023-03-02 Mark Andrew Fraser Handcart
US20240168391A1 (en) * 2022-11-23 2024-05-23 Kla Corporation Device feature specific edge placement error (epe)

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3333631A (en) * 1964-12-03 1967-08-01 Mobil Oil Corp Method for optimum miscible flooding of reservoirs using a model to determine input profile
US6201601B1 (en) 1997-09-19 2001-03-13 Kla-Tencor Corporation Sample inspection system
US6181420B1 (en) 1998-10-06 2001-01-30 Zygo Corporation Interferometry system having reduced cyclic errors
KR20040076742A (ko) * 2003-02-26 2004-09-03 삼성전자주식회사 결함 분류 방법 및 결함 분류 장치
US6947588B2 (en) 2003-07-14 2005-09-20 August Technology Corp. Edge normal process
DE10333445B4 (de) * 2003-07-23 2021-10-14 Leica Microsystems Cms Gmbh Konfokales Rastermikroskop
US7554656B2 (en) * 2005-10-06 2009-06-30 Kla-Tencor Technologies Corp. Methods and systems for inspection of a wafer
US7436505B2 (en) * 2006-04-04 2008-10-14 Kla-Tencor Technologies Corp. Computer-implemented methods and systems for determining a configuration for a light scattering inspection system
US7714997B2 (en) 2006-11-07 2010-05-11 Hitachi High-Technologies Corporation Apparatus for inspecting defects
US8289527B2 (en) 2010-04-01 2012-10-16 Tokyo Electron Limited Optimization of ray tracing and beam propagation parameters
US20120316855A1 (en) 2011-06-08 2012-12-13 Kla-Tencor Corporation Using Three-Dimensional Representations for Defect-Related Applications
US9151940B2 (en) * 2012-12-05 2015-10-06 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
KR20140122608A (ko) 2013-04-10 2014-10-20 삼성전자주식회사 디펙의 깊이 정보 추출 장치 및 방법과 그 디펙의 깊이 정보를 이용한 반도체 공정 개선방법
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
US9535010B2 (en) 2014-05-15 2017-01-03 Kla-Tencor Corp. Defect sampling for electron beam review based on defect attributes from optical inspection and optical review
TWI649932B (zh) * 2014-06-20 2019-02-01 美商克萊譚克公司 使用面鏡及/或稜鏡之雷射重覆率倍增器及平頂射束分佈產生器
US9606069B2 (en) * 2014-06-25 2017-03-28 Kla-Tencor Corporation Method, apparatus and system for generating multiple spatially separated inspection regions on a substrate
JP6369860B2 (ja) * 2014-07-15 2018-08-08 株式会社日立ハイテクノロジーズ 欠陥観察方法及びその装置
US9726615B2 (en) * 2014-07-22 2017-08-08 Kla-Tencor Corporation System and method for simultaneous dark field and phase contrast inspection
KR20180090385A (ko) * 2015-12-31 2018-08-10 케이엘에이-텐코 코포레이션 반도체 애플리케이션을 위한 기계 학습 기반의 모델의 가속 트레이닝
KR102160223B1 (ko) * 2015-12-31 2020-09-28 에이에스엠엘 홀딩 엔.브이. 검사 시스템에서의 포커싱을 위한 디바이스 및 방법
US10887580B2 (en) * 2016-10-07 2021-01-05 Kla-Tencor Corporation Three-dimensional imaging for semiconductor wafer inspection
US11580398B2 (en) * 2016-10-14 2023-02-14 KLA-Tenor Corp. Diagnostic systems and methods for deep learning models configured for semiconductor applications
EP3333631A1 (en) 2016-12-06 2018-06-13 ASML Netherlands B.V. Method of measuring a target, metrology apparatus, polarizer assembly
US10732130B2 (en) * 2018-06-19 2020-08-04 Kla-Tencor Corporation Embedded particle depth binning based on multiple scattering signals

Also Published As

Publication number Publication date
CN112219113A (zh) 2021-01-12
WO2019245785A1 (en) 2019-12-26
IL279286B2 (en) 2024-02-01
JP7236473B2 (ja) 2023-03-09
JP2021527813A (ja) 2021-10-14
US10732130B2 (en) 2020-08-04
KR102495449B1 (ko) 2023-02-06
KR20210011057A (ko) 2021-01-29
US20190383754A1 (en) 2019-12-19
CN112219113B (zh) 2022-03-25
IL279286A (en) 2021-01-31
TWI785253B (zh) 2022-12-01
IL279286B1 (en) 2023-10-01
TW202018279A (zh) 2020-05-16

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