SG11202012061QA - Embedded particle depth binning based on multiple scattering signals - Google Patents
Embedded particle depth binning based on multiple scattering signalsInfo
- Publication number
- SG11202012061QA SG11202012061QA SG11202012061QA SG11202012061QA SG11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA SG 11202012061Q A SG11202012061Q A SG 11202012061QA
- Authority
- SG
- Singapore
- Prior art keywords
- multiple scattering
- scattering signals
- embedded particle
- particle depth
- binning based
- Prior art date
Links
- 239000002245 particle Substances 0.000 title 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4795—Scattering, i.e. diffuse reflection spatially resolved investigating of object in scattering medium
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4707—Forward scatter; Low angle scatter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4711—Multiangle measurement
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4726—Detecting scatter at 90°
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4792—Polarisation of scatter light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
- G01N2021/8438—Mutilayers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8883—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
- G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/063—Illuminating optical parts
- G01N2201/0638—Refractive parts
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- Pathology (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Signal Processing (AREA)
- Optics & Photonics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating Or Analysing Biological Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862687123P | 2018-06-19 | 2018-06-19 | |
US16/165,742 US10732130B2 (en) | 2018-06-19 | 2018-10-19 | Embedded particle depth binning based on multiple scattering signals |
PCT/US2019/036432 WO2019245785A1 (en) | 2018-06-19 | 2019-06-11 | Embedded particle depth binning based on multiple scattering signals |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202012061QA true SG11202012061QA (en) | 2021-01-28 |
Family
ID=68840629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202012061QA SG11202012061QA (en) | 2018-06-19 | 2019-06-11 | Embedded particle depth binning based on multiple scattering signals |
Country Status (8)
Country | Link |
---|---|
US (1) | US10732130B2 (ja) |
JP (1) | JP7236473B2 (ja) |
KR (1) | KR102495449B1 (ja) |
CN (1) | CN112219113B (ja) |
IL (1) | IL279286B2 (ja) |
SG (1) | SG11202012061QA (ja) |
TW (1) | TWI785253B (ja) |
WO (1) | WO2019245785A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10732130B2 (en) * | 2018-06-19 | 2020-08-04 | Kla-Tencor Corporation | Embedded particle depth binning based on multiple scattering signals |
US11668658B2 (en) * | 2018-10-08 | 2023-06-06 | Araz Yacoubian | Multi-parameter inspection apparatus for monitoring of additive manufacturing parts |
JP7206020B2 (ja) | 2020-11-17 | 2023-01-17 | マシンビジョンライティング株式会社 | 画像観察装置及びその照明光学系 |
WO2023023701A1 (en) * | 2021-08-24 | 2023-03-02 | Mark Andrew Fraser | Handcart |
US20240168391A1 (en) * | 2022-11-23 | 2024-05-23 | Kla Corporation | Device feature specific edge placement error (epe) |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3333631A (en) * | 1964-12-03 | 1967-08-01 | Mobil Oil Corp | Method for optimum miscible flooding of reservoirs using a model to determine input profile |
US6201601B1 (en) | 1997-09-19 | 2001-03-13 | Kla-Tencor Corporation | Sample inspection system |
US6181420B1 (en) | 1998-10-06 | 2001-01-30 | Zygo Corporation | Interferometry system having reduced cyclic errors |
KR20040076742A (ko) * | 2003-02-26 | 2004-09-03 | 삼성전자주식회사 | 결함 분류 방법 및 결함 분류 장치 |
US6947588B2 (en) | 2003-07-14 | 2005-09-20 | August Technology Corp. | Edge normal process |
DE10333445B4 (de) * | 2003-07-23 | 2021-10-14 | Leica Microsystems Cms Gmbh | Konfokales Rastermikroskop |
US7554656B2 (en) * | 2005-10-06 | 2009-06-30 | Kla-Tencor Technologies Corp. | Methods and systems for inspection of a wafer |
US7436505B2 (en) * | 2006-04-04 | 2008-10-14 | Kla-Tencor Technologies Corp. | Computer-implemented methods and systems for determining a configuration for a light scattering inspection system |
US7714997B2 (en) | 2006-11-07 | 2010-05-11 | Hitachi High-Technologies Corporation | Apparatus for inspecting defects |
US8289527B2 (en) | 2010-04-01 | 2012-10-16 | Tokyo Electron Limited | Optimization of ray tracing and beam propagation parameters |
US20120316855A1 (en) | 2011-06-08 | 2012-12-13 | Kla-Tencor Corporation | Using Three-Dimensional Representations for Defect-Related Applications |
US9151940B2 (en) * | 2012-12-05 | 2015-10-06 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
KR20140122608A (ko) | 2013-04-10 | 2014-10-20 | 삼성전자주식회사 | 디펙의 깊이 정보 추출 장치 및 방법과 그 디펙의 깊이 정보를 이용한 반도체 공정 개선방법 |
US9310320B2 (en) | 2013-04-15 | 2016-04-12 | Kla-Tencor Corp. | Based sampling and binning for yield critical defects |
US9535010B2 (en) | 2014-05-15 | 2017-01-03 | Kla-Tencor Corp. | Defect sampling for electron beam review based on defect attributes from optical inspection and optical review |
TWI649932B (zh) * | 2014-06-20 | 2019-02-01 | 美商克萊譚克公司 | 使用面鏡及/或稜鏡之雷射重覆率倍增器及平頂射束分佈產生器 |
US9606069B2 (en) * | 2014-06-25 | 2017-03-28 | Kla-Tencor Corporation | Method, apparatus and system for generating multiple spatially separated inspection regions on a substrate |
JP6369860B2 (ja) * | 2014-07-15 | 2018-08-08 | 株式会社日立ハイテクノロジーズ | 欠陥観察方法及びその装置 |
US9726615B2 (en) * | 2014-07-22 | 2017-08-08 | Kla-Tencor Corporation | System and method for simultaneous dark field and phase contrast inspection |
KR20180090385A (ko) * | 2015-12-31 | 2018-08-10 | 케이엘에이-텐코 코포레이션 | 반도체 애플리케이션을 위한 기계 학습 기반의 모델의 가속 트레이닝 |
KR102160223B1 (ko) * | 2015-12-31 | 2020-09-28 | 에이에스엠엘 홀딩 엔.브이. | 검사 시스템에서의 포커싱을 위한 디바이스 및 방법 |
US10887580B2 (en) * | 2016-10-07 | 2021-01-05 | Kla-Tencor Corporation | Three-dimensional imaging for semiconductor wafer inspection |
US11580398B2 (en) * | 2016-10-14 | 2023-02-14 | KLA-Tenor Corp. | Diagnostic systems and methods for deep learning models configured for semiconductor applications |
EP3333631A1 (en) | 2016-12-06 | 2018-06-13 | ASML Netherlands B.V. | Method of measuring a target, metrology apparatus, polarizer assembly |
US10732130B2 (en) * | 2018-06-19 | 2020-08-04 | Kla-Tencor Corporation | Embedded particle depth binning based on multiple scattering signals |
-
2018
- 2018-10-19 US US16/165,742 patent/US10732130B2/en active Active
-
2019
- 2019-06-11 SG SG11202012061QA patent/SG11202012061QA/en unknown
- 2019-06-11 WO PCT/US2019/036432 patent/WO2019245785A1/en active Application Filing
- 2019-06-11 JP JP2020570693A patent/JP7236473B2/ja active Active
- 2019-06-11 KR KR1020217000554A patent/KR102495449B1/ko active IP Right Grant
- 2019-06-11 IL IL279286A patent/IL279286B2/en unknown
- 2019-06-11 CN CN201980037368.6A patent/CN112219113B/zh active Active
- 2019-06-17 TW TW108120821A patent/TWI785253B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN112219113A (zh) | 2021-01-12 |
WO2019245785A1 (en) | 2019-12-26 |
IL279286B2 (en) | 2024-02-01 |
JP7236473B2 (ja) | 2023-03-09 |
JP2021527813A (ja) | 2021-10-14 |
US10732130B2 (en) | 2020-08-04 |
KR102495449B1 (ko) | 2023-02-06 |
KR20210011057A (ko) | 2021-01-29 |
US20190383754A1 (en) | 2019-12-19 |
CN112219113B (zh) | 2022-03-25 |
IL279286A (en) | 2021-01-31 |
TWI785253B (zh) | 2022-12-01 |
IL279286B1 (en) | 2023-10-01 |
TW202018279A (zh) | 2020-05-16 |
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