SG11202000234PA - Underlayer film-forming composition, pattern-forming method, and copolymer for forming underlayer film used for pattern formation - Google Patents

Underlayer film-forming composition, pattern-forming method, and copolymer for forming underlayer film used for pattern formation

Info

Publication number
SG11202000234PA
SG11202000234PA SG11202000234PA SG11202000234PA SG11202000234PA SG 11202000234P A SG11202000234P A SG 11202000234PA SG 11202000234P A SG11202000234P A SG 11202000234PA SG 11202000234P A SG11202000234P A SG 11202000234PA SG 11202000234P A SG11202000234P A SG 11202000234PA
Authority
SG
Singapore
Prior art keywords
forming
underlayer film
pattern
copolymer
pattern formation
Prior art date
Application number
SG11202000234PA
Other languages
English (en)
Inventor
Kimiko Hattori
Kazuyo Morita
Original Assignee
Oji Holdings Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oji Holdings Corp filed Critical Oji Holdings Corp
Publication of SG11202000234PA publication Critical patent/SG11202000234PA/en

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08B—POLYSACCHARIDES; DERIVATIVES THEREOF
    • C08B37/00—Preparation of polysaccharides not provided for in groups C08B1/00 - C08B35/00; Derivatives thereof
    • C08B37/0006—Homoglycans, i.e. polysaccharides having a main chain consisting of one single sugar, e.g. colominic acid
    • C08B37/0009—Homoglycans, i.e. polysaccharides having a main chain consisting of one single sugar, e.g. colominic acid alpha-D-Glucans, e.g. polydextrose, alternan, glycogen; (alpha-1,4)(alpha-1,6)-D-Glucans; (alpha-1,3)(alpha-1,4)-D-Glucans, e.g. isolichenan or nigeran; (alpha-1,4)-D-Glucans; (alpha-1,3)-D-Glucans, e.g. pseudonigeran; Derivatives thereof
    • C08B37/0012—Cyclodextrin [CD], e.g. cycle with 6 units (alpha), with 7 units (beta) and with 8 units (gamma), large-ring cyclodextrin or cycloamylose with 9 units or more; Derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/38—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an acetal or ketal radical
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/14—Methyl esters, e.g. methyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L1/00—Compositions of cellulose, modified cellulose or cellulose derivatives
    • C08L1/08—Cellulose derivatives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L5/00—Compositions of polysaccharides or of their derivatives not provided for in groups C08L1/00 or C08L3/00
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/0325—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polysaccharides, e.g. cellulose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Metallurgy (AREA)
  • Emergency Medicine (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Biochemistry (AREA)
  • Materials Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
SG11202000234PA 2017-07-13 2017-12-20 Underlayer film-forming composition, pattern-forming method, and copolymer for forming underlayer film used for pattern formation SG11202000234PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017137452 2017-07-13
PCT/JP2017/045804 WO2019012716A1 (ja) 2017-07-13 2017-12-20 下層膜形成組成物、パターン形成方法及びパターン形成下層膜形成用コポリマー

Publications (1)

Publication Number Publication Date
SG11202000234PA true SG11202000234PA (en) 2020-02-27

Family

ID=65002398

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202000234PA SG11202000234PA (en) 2017-07-13 2017-12-20 Underlayer film-forming composition, pattern-forming method, and copolymer for forming underlayer film used for pattern formation

Country Status (8)

Country Link
US (1) US20210149307A1 (de)
EP (1) EP3654102A4 (de)
JP (1) JP7184036B2 (de)
KR (1) KR20200030528A (de)
CN (1) CN110869851A (de)
SG (1) SG11202000234PA (de)
TW (1) TW201908350A (de)
WO (1) WO2019012716A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200401047A1 (en) * 2018-02-26 2020-12-24 Oji Holdings Corporation Underlayer film-forming composition, pattern-forming method, copolymer, and monomer for underlayer film-forming composition
JP2020149037A (ja) * 2019-03-11 2020-09-17 キオクシア株式会社 パターン形成材料、パターン形成用組成物、パターン形成方法および半導体装置の製造方法
JP7338271B2 (ja) * 2019-07-02 2023-09-05 王子ホールディングス株式会社 レジスト材料及びパターン形成方法
KR20220029663A (ko) * 2019-07-02 2022-03-08 오지 홀딩스 가부시키가이샤 패턴 형성 방법, 레지스트 재료, 및 패턴 형성 장치
WO2021002350A1 (ja) * 2019-07-02 2021-01-07 王子ホールディングス株式会社 レジスト材料及びパターン形成方法
JP6801829B1 (ja) * 2019-07-02 2020-12-16 王子ホールディングス株式会社 レジスト材料及びパターン形成方法
US20230187208A1 (en) * 2020-06-12 2023-06-15 Nissan Chemical Corporation Protective film-forming composition containing diol structure
US20220197142A1 (en) * 2020-12-17 2022-06-23 Rohm And Haas Electronic Materials Llc Photoresist underlayer compositions and patterning methods
US20220197141A1 (en) * 2020-12-17 2022-06-23 Rohm And Haas Electronic Materials Llc Photoresist underlayer compositions and patterning methods
JP7279091B2 (ja) * 2021-01-06 2023-05-22 株式会社事業革新パートナーズ 容器又は平板の成形物、樹脂組成物及びその樹脂ペレットの製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2990284B2 (ja) * 1988-10-27 1999-12-13 日本精化株式会社 グリコシド誘導体、グリコシド誘導体含有重合体及びそれらの製造法
GB9900315D0 (en) * 1999-01-07 1999-02-24 Ici Plc Coating compositions
TWI358612B (en) * 2003-08-28 2012-02-21 Nissan Chemical Ind Ltd Polyamic acid-containing composition for forming a
TWI360726B (en) 2003-10-30 2012-03-21 Nissan Chemical Ind Ltd Sublayer coating-forming composition containing de
JP4832955B2 (ja) * 2005-06-07 2011-12-07 信越化学工業株式会社 レジスト下層膜材料並びにそれを用いたパターン形成方法
JP4706851B2 (ja) 2006-03-24 2011-06-22 日産化学工業株式会社 包接分子を含有するシクロデキストリンを含むリソグラフィー用下層膜形成組成物
JP4724072B2 (ja) * 2006-08-17 2011-07-13 富士通株式会社 レジストパターンの形成方法、半導体装置及びその製造方法
WO2009104643A1 (ja) * 2008-02-20 2009-08-27 日産化学工業株式会社 光硬化膜形成組成物及び光硬化膜形成方法
TW201120063A (en) * 2009-08-21 2011-06-16 Idemitsu Kosan Co Sugar derivative having a polymerizable group, and resist material using said sugar derivative
US8383319B2 (en) * 2009-08-25 2013-02-26 Eastman Kodak Company Lithographic printing plate precursors and stacks
WO2012057748A1 (en) * 2010-10-27 2012-05-03 Empire Technology Development Llc Biocompatible polymerizable acrylate products and methods
JP2012100546A (ja) 2010-11-08 2012-05-31 Oji Paper Co Ltd キシロオリゴ糖および酸性キシロオリゴ糖の製造方法
JP2012180424A (ja) 2011-02-28 2012-09-20 Univ Of Tokyo キシラン誘導体前駆体、キシラン誘導体、キシラングラフトコポリマー、及びこれらの製造方法、並びに、ポリマー成形体
JP5910361B2 (ja) * 2011-07-14 2016-04-27 信越化学工業株式会社 パターン形成方法及びレジスト組成物
JP5776400B2 (ja) * 2011-07-20 2015-09-09 Jsr株式会社 金属酸化物膜形成用組成物
JP6120590B2 (ja) 2013-02-01 2017-04-26 国立大学法人京都大学 変性ナノセルロース及び変性ナノセルロースを含む樹脂組成物
JP6497143B2 (ja) 2015-03-13 2019-04-10 Jsr株式会社 レジスト下層膜形成用組成物及び該組成物を用いたパターン形成方法
JP6711104B2 (ja) 2015-04-24 2020-06-17 Jsr株式会社 レジスト下層膜形成方法及びパターン形成方法
KR102079018B1 (ko) * 2015-12-25 2020-02-19 오지 홀딩스 가부시키가이샤 패턴 형성용 자기 조직화 조성물 및 패턴 형성 방법
JP6813028B2 (ja) * 2016-10-28 2021-01-13 王子ホールディングス株式会社 パターン形成方法、下地剤及び積層体

Also Published As

Publication number Publication date
CN110869851A (zh) 2020-03-06
KR20200030528A (ko) 2020-03-20
JP7184036B2 (ja) 2022-12-06
EP3654102A4 (de) 2021-04-14
US20210149307A1 (en) 2021-05-20
WO2019012716A1 (ja) 2019-01-17
TW201908350A (zh) 2019-03-01
EP3654102A1 (de) 2020-05-20
JPWO2019012716A1 (ja) 2020-05-21

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