SG11201902917PA - Gas phase etching apparatus and gas phase etching equipment - Google Patents

Gas phase etching apparatus and gas phase etching equipment

Info

Publication number
SG11201902917PA
SG11201902917PA SG11201902917PA SG11201902917PA SG11201902917PA SG 11201902917P A SG11201902917P A SG 11201902917PA SG 11201902917P A SG11201902917P A SG 11201902917PA SG 11201902917P A SG11201902917P A SG 11201902917PA SG 11201902917P A SG11201902917P A SG 11201902917PA
Authority
SG
Singapore
Prior art keywords
gas phase
phase etching
equipment
etching apparatus
etching equipment
Prior art date
Application number
SG11201902917PA
Inventor
Jun Zhang
Zhenguo Ma
Xin Wu
Lihui Wen
Yunlong Hu
Henan Zhang
Fuping Chu
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11201902917PA publication Critical patent/SG11201902917PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
SG11201902917PA 2016-10-08 2017-10-09 Gas phase etching apparatus and gas phase etching equipment SG11201902917PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610879076.5A CN107919298B (en) 2016-10-08 2016-10-08 Gas phase etching device and equipment
PCT/CN2017/105368 WO2018064983A1 (en) 2016-10-08 2017-10-09 Gas phase etching apparatus and gas phase etching equipment

Publications (1)

Publication Number Publication Date
SG11201902917PA true SG11201902917PA (en) 2019-05-30

Family

ID=61831290

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201902917PA SG11201902917PA (en) 2016-10-08 2017-10-09 Gas phase etching apparatus and gas phase etching equipment

Country Status (7)

Country Link
US (1) US11107706B2 (en)
JP (1) JP6906609B2 (en)
KR (1) KR102219586B1 (en)
CN (1) CN107919298B (en)
SG (1) SG11201902917PA (en)
TW (1) TWI671790B (en)
WO (1) WO2018064983A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108847391B (en) * 2018-06-01 2021-06-08 北京北方华创微电子装备有限公司 Non-plasma dry etching method
CN111261540A (en) * 2018-11-30 2020-06-09 东泰高科装备科技有限公司 Process chamber and semiconductor processing equipment
JP7373302B2 (en) * 2019-05-15 2023-11-02 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing equipment
JP2022064042A (en) * 2020-10-13 2022-04-25 株式会社Kelk Substrate processing device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05125541A (en) * 1991-11-08 1993-05-21 Kobe Steel Ltd Plasma treating device
US5282925A (en) * 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
KR100381011B1 (en) * 2000-11-13 2003-04-26 한국전자통신연구원 Stiction-free release method of microstructure for fabrication of MEMS device
KR101037690B1 (en) * 2004-01-09 2011-05-30 주식회사 하이닉스반도체 Method for fabricating semiconductor device
US20070123051A1 (en) 2004-02-26 2007-05-31 Reza Arghavani Oxide etch with nh4-nf3 chemistry
JP4574300B2 (en) * 2004-09-14 2010-11-04 東京エレクトロン株式会社 Etching method and computer storage medium
JP4997842B2 (en) * 2005-10-18 2012-08-08 東京エレクトロン株式会社 Processing equipment
GB0615343D0 (en) * 2006-08-02 2006-09-13 Point 35 Microstructures Ltd Improved etch process
US7846845B2 (en) * 2006-10-26 2010-12-07 Applied Materials, Inc. Integrated method for removal of halogen residues from etched substrates in a processing system
US8008166B2 (en) * 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
JP5192214B2 (en) * 2007-11-02 2013-05-08 東京エレクトロン株式会社 Gas supply apparatus, substrate processing apparatus, and substrate processing method
US8883650B2 (en) * 2008-01-24 2014-11-11 United Microelectronics Corp. Method of removing oxides
CN101392374B (en) * 2008-11-07 2010-09-22 清华大学 Double temperature control hydrofluoric acid vapor etching device
CN102376604B (en) * 2010-08-19 2013-10-30 北京北方微电子基地设备工艺研究中心有限责任公司 Vacuum processing equipment and temperature control method thereof, and semiconductor device processing method
KR101443792B1 (en) * 2013-02-20 2014-09-26 국제엘렉트릭코리아 주식회사 Gas Phase Etcher Apparatus
JP6239339B2 (en) * 2013-10-17 2017-11-29 東京エレクトロン株式会社 Etching apparatus, etching method, and substrate mounting mechanism
JP2016025195A (en) * 2014-07-18 2016-02-08 東京エレクトロン株式会社 Etching method

Also Published As

Publication number Publication date
JP6906609B2 (en) 2021-07-21
WO2018064983A1 (en) 2018-04-12
CN107919298A (en) 2018-04-17
JP2019533902A (en) 2019-11-21
CN107919298B (en) 2021-01-29
US20190228993A1 (en) 2019-07-25
TWI671790B (en) 2019-09-11
KR102219586B1 (en) 2021-02-24
KR20190034277A (en) 2019-04-01
TW201826331A (en) 2018-07-16
US11107706B2 (en) 2021-08-31

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