SG11201705265RA - Composition for forming underlayer and method for forming underlayer therewith - Google Patents
Composition for forming underlayer and method for forming underlayer therewithInfo
- Publication number
- SG11201705265RA SG11201705265RA SG11201705265RA SG11201705265RA SG11201705265RA SG 11201705265R A SG11201705265R A SG 11201705265RA SG 11201705265R A SG11201705265R A SG 11201705265RA SG 11201705265R A SG11201705265R A SG 11201705265RA SG 11201705265R A SG11201705265R A SG 11201705265RA
- Authority
- SG
- Singapore
- Prior art keywords
- forming underlayer
- therewith
- composition
- underlayer
- forming
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/02—Polyamines
- C08G73/026—Wholly aromatic polyamines
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D177/00—Coating compositions based on polyamides obtained by reactions forming a carboxylic amide link in the main chain; Coating compositions based on derivatives of such polymers
- C09D177/10—Polyamides derived from aromatically bound amino and carboxyl groups of amino carboxylic acids or of polyamines and polycarboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/02—Polyamines
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
- G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Materials For Photolithography (AREA)
- Paints Or Removers (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015025574A JP2016148777A (ja) | 2015-02-12 | 2015-02-12 | 下層膜形成用組成物、およびそれを用いた下層膜の形成方法 |
PCT/EP2016/000166 WO2016128117A1 (en) | 2015-02-12 | 2016-02-02 | Composition for forming underlayer and method for forming underlayer therewith |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201705265RA true SG11201705265RA (en) | 2017-07-28 |
Family
ID=55349778
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201705265RA SG11201705265RA (en) | 2015-02-12 | 2016-02-02 | Composition for forming underlayer and method for forming underlayer therewith |
Country Status (8)
Country | Link |
---|---|
US (1) | US10451971B2 (ja) |
EP (1) | EP3256537B1 (ja) |
JP (2) | JP2016148777A (ja) |
KR (1) | KR102292777B1 (ja) |
CN (1) | CN107207903B (ja) |
SG (1) | SG11201705265RA (ja) |
TW (1) | TWI682975B (ja) |
WO (1) | WO2016128117A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106471057A (zh) * | 2014-05-29 | 2017-03-01 | Az电子材料(卢森堡)有限公司 | 空隙形成用组合物、具备使用该组合物而形成的空隙的半导体装置、以及使用了该组合物的半导体装置的制造方法 |
JP2018100249A (ja) | 2016-12-21 | 2018-06-28 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 新規化合物、半導体材料、およびこれを用いた膜および半導体の製造方法 |
KR20210137678A (ko) * | 2020-05-11 | 2021-11-18 | 동우 화인켐 주식회사 | 중합체 및 이를 포함하는 하드마스크용 조성물 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1255142A (en) * | 1985-03-11 | 1989-06-06 | Edward C. Fredericks | Method and composition of matter for improving conductor resolution in microelectronic circuits |
JPH0832815B2 (ja) * | 1988-06-09 | 1996-03-29 | 日本石油株式会社 | 高分子組成物 |
US5120475A (en) * | 1989-12-14 | 1992-06-09 | The Mead Corporation | Method for preparing microcapsules having improved pre-walls, and microcapsules and photosensitive materials produced thereby |
TWI363251B (en) | 2003-07-30 | 2012-05-01 | Nissan Chemical Ind Ltd | Sublayer coating-forming composition for lithography containing compound having protected carboxy group |
JP2008081720A (ja) * | 2006-08-30 | 2008-04-10 | Fujifilm Corp | 分解性樹脂組成物及びそれを用いるパターン形成材料 |
US8430952B2 (en) * | 2006-09-29 | 2013-04-30 | Eastman Kodak Company | Water soluble branched polyethyleneimine compositions |
US7914410B2 (en) | 2006-09-29 | 2011-03-29 | Shimano Inc. | Bicycle chain connecting link |
CN101679206B (zh) * | 2007-04-12 | 2016-05-11 | 日产化学工业株式会社 | 低聚苯胺化合物 |
KR20120032024A (ko) * | 2007-05-23 | 2012-04-04 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물 |
WO2008153101A1 (ja) * | 2007-06-15 | 2008-12-18 | Nissan Chemical Industries, Ltd. | 熱硬化膜形成用樹脂組成物 |
JP5742852B2 (ja) * | 2010-11-01 | 2015-07-01 | 日産化学工業株式会社 | トリアジン環含有重合体およびそれを含む膜形成用組成物 |
KR20130034617A (ko) * | 2011-09-28 | 2013-04-05 | 제이에스알 가부시끼가이샤 | 레지스트 하층막 형성용 조성물, 패턴 형성 방법 및 중합체 |
CN103827159B (zh) * | 2011-09-29 | 2016-07-06 | 日产化学工业株式会社 | 二芳基胺酚醛清漆树脂 |
JP5767615B2 (ja) * | 2011-10-07 | 2015-08-19 | 富士フイルム株式会社 | インプリント用下層膜組成物およびこれを用いたパターン形成方法 |
KR101615596B1 (ko) * | 2011-12-05 | 2016-04-26 | 닛산 가가쿠 고교 가부시키 가이샤 | 아닐린 올리고머 화합물의 제조 방법 |
US8697336B2 (en) * | 2011-12-15 | 2014-04-15 | Az Electronic Materials Usa Corp. | Composition for forming a developable bottom antireflective coating |
JP2014010408A (ja) * | 2012-07-02 | 2014-01-20 | Nissan Chem Ind Ltd | 導電性化合物を含むレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
FR2993631B1 (fr) * | 2012-07-18 | 2015-04-10 | Snecma | Dispositif de raccordement en aveugle entre des alimentations fluidiques, electriques ou analogues, et un mecanisme de commande recepteur |
KR102229657B1 (ko) * | 2013-05-13 | 2021-03-18 | 닛산 가가쿠 가부시키가이샤 | 비스페놀알데히드를 이용한 노볼락 수지 함유 레지스트 하층막 형성 조성물 |
US10192407B2 (en) | 2014-01-10 | 2019-01-29 | Handle Financial, Inc. | Systems and methods for cash payments for online gaming |
CN106471057A (zh) * | 2014-05-29 | 2017-03-01 | Az电子材料(卢森堡)有限公司 | 空隙形成用组合物、具备使用该组合物而形成的空隙的半导体装置、以及使用了该组合物的半导体装置的制造方法 |
-
2015
- 2015-02-12 JP JP2015025574A patent/JP2016148777A/ja active Pending
-
2016
- 2016-02-02 JP JP2017535907A patent/JP6657228B2/ja active Active
- 2016-02-02 CN CN201680010048.8A patent/CN107207903B/zh active Active
- 2016-02-02 EP EP16703912.2A patent/EP3256537B1/en active Active
- 2016-02-02 KR KR1020177025719A patent/KR102292777B1/ko active IP Right Grant
- 2016-02-02 US US15/550,490 patent/US10451971B2/en not_active Expired - Fee Related
- 2016-02-02 SG SG11201705265RA patent/SG11201705265RA/en unknown
- 2016-02-02 WO PCT/EP2016/000166 patent/WO2016128117A1/en active Application Filing
- 2016-02-05 TW TW105103936A patent/TWI682975B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2018508029A (ja) | 2018-03-22 |
KR102292777B1 (ko) | 2021-08-26 |
TW201638253A (zh) | 2016-11-01 |
CN107207903B (zh) | 2020-08-14 |
US10451971B2 (en) | 2019-10-22 |
WO2016128117A1 (en) | 2016-08-18 |
TWI682975B (zh) | 2020-01-21 |
JP2016148777A (ja) | 2016-08-18 |
JP6657228B2 (ja) | 2020-03-04 |
EP3256537A1 (en) | 2017-12-20 |
US20180039178A1 (en) | 2018-02-08 |
CN107207903A (zh) | 2017-09-26 |
KR20170117513A (ko) | 2017-10-23 |
EP3256537B1 (en) | 2021-04-14 |
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