SG11201701285PA - Magnetic element and method of fabrication thereof - Google Patents
Magnetic element and method of fabrication thereofInfo
- Publication number
- SG11201701285PA SG11201701285PA SG11201701285PA SG11201701285PA SG11201701285PA SG 11201701285P A SG11201701285P A SG 11201701285PA SG 11201701285P A SG11201701285P A SG 11201701285PA SG 11201701285P A SG11201701285P A SG 11201701285PA SG 11201701285P A SG11201701285P A SG 11201701285PA
- Authority
- SG
- Singapore
- Prior art keywords
- fabrication
- magnetic element
- magnetic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG11201701285PA SG11201701285PA (en) | 2014-09-11 | 2015-09-14 | Magnetic element and method of fabrication thereof |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG10201405641P | 2014-09-11 | ||
SG11201701285PA SG11201701285PA (en) | 2014-09-11 | 2015-09-14 | Magnetic element and method of fabrication thereof |
PCT/SG2015/050315 WO2016039696A1 (en) | 2014-09-11 | 2015-09-14 | Magnetic element and method of fabrication thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201701285PA true SG11201701285PA (en) | 2017-03-30 |
Family
ID=55459342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201701285PA SG11201701285PA (en) | 2014-09-11 | 2015-09-14 | Magnetic element and method of fabrication thereof |
Country Status (3)
Country | Link |
---|---|
US (1) | US20170200767A1 (en) |
SG (1) | SG11201701285PA (en) |
WO (1) | WO2016039696A1 (en) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7161829B2 (en) * | 2003-09-19 | 2007-01-09 | Grandis, Inc. | Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements |
US7088609B2 (en) * | 2004-05-11 | 2006-08-08 | Grandis, Inc. | Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same |
US7826181B2 (en) * | 2008-11-12 | 2010-11-02 | Seagate Technology Llc | Magnetic memory with porous non-conductive current confinement layer |
FR2946183B1 (en) * | 2009-05-27 | 2011-12-23 | Commissariat Energie Atomique | MAGNETIC DEVICE WITH POLARIZATION OF SPIN. |
US8363459B2 (en) * | 2009-06-11 | 2013-01-29 | Qualcomm Incorporated | Magnetic tunnel junction device and fabrication |
US8981505B2 (en) * | 2013-01-11 | 2015-03-17 | Headway Technologies, Inc. | Mg discontinuous insertion layer for improving MTJ shunt |
-
2015
- 2015-09-14 SG SG11201701285PA patent/SG11201701285PA/en unknown
- 2015-09-14 US US15/510,679 patent/US20170200767A1/en not_active Abandoned
- 2015-09-14 WO PCT/SG2015/050315 patent/WO2016039696A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2016039696A1 (en) | 2016-03-17 |
US20170200767A1 (en) | 2017-07-13 |
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