SG10202002649UA - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
SG10202002649UA
SG10202002649UA SG10202002649UA SG10202002649UA SG10202002649UA SG 10202002649U A SG10202002649U A SG 10202002649UA SG 10202002649U A SG10202002649U A SG 10202002649UA SG 10202002649U A SG10202002649U A SG 10202002649UA SG 10202002649U A SG10202002649U A SG 10202002649UA
Authority
SG
Singapore
Prior art keywords
processing method
wafer processing
wafer
processing
Prior art date
Application number
SG10202002649UA
Inventor
Harada Shigenori
Matsuzawa Minoru
Kiuchi Hayato
Yodo Yoshiaki
Arakawa Taro
Agari Masamitsu
Kawamura Emiko
Fujii Yusuke
Miyai Toshiki
Ohmae Makiko
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10202002649UA publication Critical patent/SG10202002649UA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/55Working by transmitting the laser beam through or within the workpiece for creating voids inside the workpiece, e.g. for forming flow passages or flow patterns
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J167/00Adhesives based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Adhesives based on derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/10Adhesives in the form of films or foils without carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/304Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
SG10202002649UA 2019-04-10 2020-03-23 Wafer processing method SG10202002649UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019074964A JP7313767B2 (en) 2019-04-10 2019-04-10 Wafer processing method

Publications (1)

Publication Number Publication Date
SG10202002649UA true SG10202002649UA (en) 2020-11-27

Family

ID=72613022

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202002649UA SG10202002649UA (en) 2019-04-10 2020-03-23 Wafer processing method

Country Status (7)

Country Link
US (1) US11024543B2 (en)
JP (1) JP7313767B2 (en)
KR (1) KR20200119727A (en)
CN (1) CN111834210A (en)
DE (1) DE102020204299A1 (en)
SG (1) SG10202002649UA (en)
TW (1) TW202105485A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7430515B2 (en) * 2019-11-06 2024-02-13 株式会社ディスコ Wafer processing method

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3076179B2 (en) 1993-07-26 2000-08-14 株式会社ディスコ Dicing equipment
JP2004119975A (en) 1995-12-04 2004-04-15 Renesas Technology Corp Method of manufacturing ic card
JP3076179U (en) 2000-09-07 2001-03-30 和雄 落合 Cup type bottle cap
JP3408805B2 (en) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 Cutting origin region forming method and workpiece cutting method
KR100480628B1 (en) * 2002-11-11 2005-03-31 삼성전자주식회사 Chip pick-up method and device for manufacturing semiconductor device using air blowing
TWI310230B (en) * 2003-01-22 2009-05-21 Lintec Corp Adhesive sheet, method for protecting surface of semiconductor wafer and method for processing work
JP4647228B2 (en) * 2004-04-01 2011-03-09 株式会社ディスコ Wafer processing method
JP2006114691A (en) 2004-10-14 2006-04-27 Disco Abrasive Syst Ltd Division method of wafer
JP4930679B2 (en) 2005-12-14 2012-05-16 日本ゼオン株式会社 Manufacturing method of semiconductor device
FI20060256L (en) * 2006-03-17 2006-03-20 Imbera Electronics Oy Circuit board manufacturing and the circuit board containing the component
JP2007311421A (en) 2006-05-16 2007-11-29 Sekisui Chem Co Ltd Method of manufacturing semiconductor chip
JP2008117943A (en) * 2006-11-06 2008-05-22 Nitto Denko Corp Adhesive sheet for water jet laser dicing
US8507359B2 (en) * 2009-12-02 2013-08-13 Sharp Kabushiki Kaisha Semiconductor device, process for producing same, and display device
JP5511441B2 (en) 2010-03-05 2014-06-04 リンテック株式会社 Sheet sticking device and sheet sticking method
US9559004B2 (en) * 2011-05-12 2017-01-31 STATS ChipPAC Pte. Ltd. Semiconductor device and method of singulating thin semiconductor wafer on carrier along modified region within non-active region formed by irradiating energy
WO2013047674A1 (en) * 2011-09-30 2013-04-04 リンテック株式会社 Dicing sheet with protective film forming layer and chip fabrication method
JP2014082317A (en) 2012-10-16 2014-05-08 Disco Abrasive Syst Ltd Wafer processing method
US9230888B2 (en) * 2013-02-11 2016-01-05 Henkel IP & Holding GmbH Wafer back side coating as dicing tape adhesive
JP6173059B2 (en) 2013-06-17 2017-08-02 株式会社ディスコ Wafer splitting device
JP6425435B2 (en) * 2014-07-01 2018-11-21 株式会社ディスコ Tip spacing maintenance device
JP5862733B1 (en) * 2014-09-08 2016-02-16 富士ゼロックス株式会社 Manufacturing method of semiconductor piece
US20160146995A1 (en) * 2014-11-26 2016-05-26 Sumitomo Chemical Company, Limited Optical film
JP6539336B2 (en) 2015-03-23 2019-07-03 リンテック株式会社 Semiconductor processing sheet and method of manufacturing semiconductor device
JP6844992B2 (en) 2016-11-24 2021-03-17 株式会社ディスコ Wafer processing method
TWI679691B (en) * 2016-11-30 2019-12-11 美商帕斯馬舍門有限責任公司 Method and apparatus for plasma dicing a semi-conductor wafer
KR102191706B1 (en) * 2017-02-24 2020-12-16 후루카와 덴키 고교 가부시키가이샤 Mask-integrated surface protection tape and method for manufacturing semiconductor chips using the same
JP6877207B2 (en) 2017-03-28 2021-05-26 株式会社ディスコ Wafer processing system
CN107195554A (en) 2017-06-28 2017-09-22 华进半导体封装先导技术研发中心有限公司 A kind of wafer packaging method
JP2019192717A (en) 2018-04-20 2019-10-31 株式会社ディスコ Method of processing wafer
JP7154809B2 (en) 2018-04-20 2022-10-18 株式会社ディスコ Wafer processing method

Also Published As

Publication number Publication date
JP7313767B2 (en) 2023-07-25
TW202105485A (en) 2021-02-01
US11024543B2 (en) 2021-06-01
DE102020204299A1 (en) 2020-10-15
KR20200119727A (en) 2020-10-20
JP2020174117A (en) 2020-10-22
US20200328118A1 (en) 2020-10-15
CN111834210A (en) 2020-10-27

Similar Documents

Publication Publication Date Title
SG10201904699RA (en) Wafer processing method
SG10201905294RA (en) Wafer processing method
SG10202006736YA (en) Wafer processing method
SG10202000576QA (en) Wafer processing method
SG10201905935VA (en) Wafer processing method
SG10202004876YA (en) Wafer processing method
SG10201912832SA (en) Wafer processing method
SG10201911116YA (en) Wafer processing method
SG10201909522RA (en) Wafer processing method
SG10201906678TA (en) Wafer processing method
SG10201905936RA (en) Wafer processing method
SG10201904719TA (en) Wafer processing method
SG10202009952SA (en) Wafer processing method
SG10202003482RA (en) Wafer processing method
SG10202002647RA (en) Wafer processing method
SG10201910165QA (en) Wafer processing method
SG10201910032WA (en) Wafer processing method
SG10201906896QA (en) Wafer processing method
SG10201906897SA (en) Wafer processing method
SG10201904710UA (en) Wafer processing method
SG10202010592VA (en) Wafer processing method
SG10202009948YA (en) Wafer processing method
SG10202009949PA (en) Wafer processing method
SG10202009268SA (en) Wafer processing method
SG10202008571TA (en) Wafer processing method