SG10201908924YA - High oxide vs nitride selectivity, low and uniform oxide trench dishing in shallow trench isolation(sti) chemical mechanical planarization polishing(cmp) - Google Patents

High oxide vs nitride selectivity, low and uniform oxide trench dishing in shallow trench isolation(sti) chemical mechanical planarization polishing(cmp)

Info

Publication number
SG10201908924YA
SG10201908924YA SG10201908924YA SG10201908924YA SG10201908924YA SG 10201908924Y A SG10201908924Y A SG 10201908924YA SG 10201908924Y A SG10201908924Y A SG 10201908924YA SG 10201908924Y A SG10201908924Y A SG 10201908924YA SG 10201908924Y A SG10201908924Y A SG 10201908924YA
Authority
SG
Singapore
Prior art keywords
oxide
sti
cmp
low
chemical mechanical
Prior art date
Application number
SG10201908924YA
Other languages
English (en)
Inventor
Shi Xiaobo
D Rose Joseph
P Murella Krishna
Zhou Hongjun
Leonard O'neill Mark
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG10201908924YA publication Critical patent/SG10201908924YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG10201908924YA 2018-09-26 2019-09-25 High oxide vs nitride selectivity, low and uniform oxide trench dishing in shallow trench isolation(sti) chemical mechanical planarization polishing(cmp) SG10201908924YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862736963P 2018-09-26 2018-09-26
US16/577,358 US20200095502A1 (en) 2018-09-26 2019-09-20 High Oxide VS Nitride Selectivity, Low And Uniform Oxide Trench Dishing In Shallow Trench Isolation(STI) Chemical Mechanical Planarization Polishing(CMP)

Publications (1)

Publication Number Publication Date
SG10201908924YA true SG10201908924YA (en) 2020-04-29

Family

ID=68072166

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201908924YA SG10201908924YA (en) 2018-09-26 2019-09-25 High oxide vs nitride selectivity, low and uniform oxide trench dishing in shallow trench isolation(sti) chemical mechanical planarization polishing(cmp)
SG10201911058VA SG10201911058VA (en) 2018-09-26 2019-11-22 High oxide vs nitride selectivity, low and uniform oxide trench dishing in shallow trench isolation(sti) chemical mechanical planarization polishing(cmp)

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201911058VA SG10201911058VA (en) 2018-09-26 2019-11-22 High oxide vs nitride selectivity, low and uniform oxide trench dishing in shallow trench isolation(sti) chemical mechanical planarization polishing(cmp)

Country Status (7)

Country Link
US (1) US20200095502A1 (ja)
EP (1) EP3628713B1 (ja)
JP (2) JP2020065051A (ja)
KR (1) KR102327457B1 (ja)
CN (1) CN110951399A (ja)
SG (2) SG10201908924YA (ja)
TW (1) TWI744696B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024173029A1 (en) * 2023-02-17 2024-08-22 Versum Materials Us, Llc Chemical mechanical planarization for shallow trench isolation

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US6964923B1 (en) 2000-05-24 2005-11-15 International Business Machines Corporation Selective polishing with slurries containing polyelectrolytes
DE10204471C1 (de) * 2002-02-05 2003-07-03 Degussa Wässerige Dispersion enthaltend mit Ceroxid umhülltes Siliciumdioxidpulver, Verfahren zu deren Herstellung und Verwendung
US6616514B1 (en) 2002-06-03 2003-09-09 Ferro Corporation High selectivity CMP slurry
US7368388B2 (en) * 2005-04-15 2008-05-06 Small Robert J Cerium oxide abrasives for chemical mechanical polishing
WO2006115393A1 (en) * 2005-04-28 2006-11-02 Techno Semichem Co., Ltd. Auto-stopping abrasive composition for polishing high step height oxide layer
EP1994112B1 (en) * 2006-01-25 2018-09-19 LG Chem, Ltd. Cmp slurry and method for polishing semiconductor wafer using the same
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JP2012109287A (ja) * 2009-03-13 2012-06-07 Asahi Glass Co Ltd 半導体用研磨剤、その製造方法及び研磨方法
EP2438133B1 (en) * 2009-06-05 2018-07-11 Basf Se Polishing slurry containing raspberry-type metal oxide nanostructures coated with CeO2
KR101330956B1 (ko) * 2009-08-19 2013-11-18 히타치가세이가부시끼가이샤 Ｃｍｐ 연마액 및 연마 방법
US20110318928A1 (en) * 2010-06-24 2011-12-29 Jinru Bian Polymeric Barrier Removal Polishing Slurry
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US20130171824A1 (en) * 2010-09-08 2013-07-04 Basf Se Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films
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US10032644B2 (en) * 2015-06-05 2018-07-24 Versum Materials Us, Llc Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives
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JP6720791B2 (ja) * 2016-09-13 2020-07-08 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液

Also Published As

Publication number Publication date
TWI744696B (zh) 2021-11-01
US20200095502A1 (en) 2020-03-26
EP3628713B1 (en) 2022-01-12
KR20200035365A (ko) 2020-04-03
CN110951399A (zh) 2020-04-03
SG10201911058VA (en) 2020-04-29
EP3628713A1 (en) 2020-04-01
JP2023104945A (ja) 2023-07-28
TW202014486A (zh) 2020-04-16
KR102327457B1 (ko) 2021-11-17
JP2020065051A (ja) 2020-04-23

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