SG10201908738VA - Phase shift-type photomask blank and phase shift-type photomask - Google Patents

Phase shift-type photomask blank and phase shift-type photomask

Info

Publication number
SG10201908738VA
SG10201908738VA SG10201908738VA SG10201908738VA SG10201908738VA SG 10201908738V A SG10201908738V A SG 10201908738VA SG 10201908738V A SG10201908738V A SG 10201908738VA SG 10201908738V A SG10201908738V A SG 10201908738VA SG 10201908738V A SG10201908738V A SG 10201908738VA
Authority
SG
Singapore
Prior art keywords
phase shift
type photomask
blank
photomask blank
type
Prior art date
Application number
SG10201908738VA
Other languages
English (en)
Inventor
Takuro Kosaka
Ryoken Ozawa
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10201908738VA publication Critical patent/SG10201908738VA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG10201908738VA 2018-09-26 2019-09-19 Phase shift-type photomask blank and phase shift-type photomask SG10201908738VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018180590A JP6927177B2 (ja) 2018-09-26 2018-09-26 位相シフト型フォトマスクブランク及び位相シフト型フォトマスク

Publications (1)

Publication Number Publication Date
SG10201908738VA true SG10201908738VA (en) 2020-04-29

Family

ID=67988891

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201908738VA SG10201908738VA (en) 2018-09-26 2019-09-19 Phase shift-type photomask blank and phase shift-type photomask

Country Status (7)

Country Link
US (1) US20200096856A1 (zh)
EP (1) EP3629084B1 (zh)
JP (1) JP6927177B2 (zh)
KR (1) KR102493632B1 (zh)
CN (1) CN110955109A (zh)
SG (1) SG10201908738VA (zh)
TW (1) TWI801665B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021059890A1 (ja) * 2019-09-25 2021-04-01 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
JP7296927B2 (ja) * 2020-09-17 2023-06-23 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法、及び位相シフトマスク

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3064769B2 (ja) 1992-11-21 2000-07-12 アルバック成膜株式会社 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法
JP2002258458A (ja) * 2000-12-26 2002-09-11 Hoya Corp ハーフトーン型位相シフトマスク及びマスクブランク
US6569581B2 (en) * 2001-03-21 2003-05-27 International Business Machines Corporation Alternating phase shifting masks
US7288366B2 (en) * 2003-10-24 2007-10-30 Chartered Semiconductor Manufacturing Ltd. Method for dual damascene patterning with single exposure using tri-tone phase shift mask
JP4933753B2 (ja) 2005-07-21 2012-05-16 信越化学工業株式会社 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法
JP4551344B2 (ja) 2006-03-02 2010-09-29 信越化学工業株式会社 フォトマスクブランクおよびフォトマスク
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP2012203317A (ja) * 2011-03-28 2012-10-22 Toppan Printing Co Ltd 位相シフトマスクブランク及び位相シフトマスク及び位相シフトマスクの製造方法
JP2018063441A (ja) * 2013-11-06 2018-04-19 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
JP6266322B2 (ja) * 2013-11-22 2018-01-24 Hoya株式会社 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク及びその製造方法、並びに表示装置の製造方法
JP6341129B2 (ja) * 2015-03-31 2018-06-13 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク
US9897911B2 (en) * 2015-08-31 2018-02-20 Shin-Etsu Chemical Co., Ltd. Halftone phase shift photomask blank, making method, and halftone phase shift photomask
JP6677139B2 (ja) * 2016-09-28 2020-04-08 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランクの製造方法
JP6733464B2 (ja) * 2016-09-28 2020-07-29 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク
KR20180041042A (ko) * 2016-10-13 2018-04-23 주식회사 에스앤에스텍 위상반전 블랭크 마스크 및 포토마스크
JP6243071B1 (ja) 2017-04-03 2017-12-06 旋造 田代 通信内容翻訳処理方法、通信内容翻訳処理プログラム、及び、記録媒体
US20180335692A1 (en) * 2017-05-18 2018-11-22 S&S Tech Co., Ltd. Phase-shift blankmask and phase-shift photomask

Also Published As

Publication number Publication date
EP3629084A1 (en) 2020-04-01
TWI801665B (zh) 2023-05-11
TW202013059A (zh) 2020-04-01
KR102493632B1 (ko) 2023-02-01
JP6927177B2 (ja) 2021-08-25
EP3629084C0 (en) 2023-06-07
JP2020052195A (ja) 2020-04-02
CN110955109A (zh) 2020-04-03
EP3629084B1 (en) 2023-06-07
KR20200035353A (ko) 2020-04-03
US20200096856A1 (en) 2020-03-26

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