SG10201607089YA - Photomask Blank - Google Patents

Photomask Blank

Info

Publication number
SG10201607089YA
SG10201607089YA SG10201607089YA SG10201607089YA SG10201607089YA SG 10201607089Y A SG10201607089Y A SG 10201607089YA SG 10201607089Y A SG10201607089Y A SG 10201607089YA SG 10201607089Y A SG10201607089Y A SG 10201607089YA SG 10201607089Y A SG10201607089Y A SG 10201607089YA
Authority
SG
Singapore
Prior art keywords
photomask blank
photomask
blank
Prior art date
Application number
SG10201607089YA
Other languages
English (en)
Inventor
Kouhei Sasamoto
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10201607089YA publication Critical patent/SG10201607089YA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG10201607089YA 2015-09-03 2016-08-25 Photomask Blank SG10201607089YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015173883A JP6341166B2 (ja) 2015-09-03 2015-09-03 フォトマスクブランク

Publications (1)

Publication Number Publication Date
SG10201607089YA true SG10201607089YA (en) 2017-04-27

Family

ID=56740134

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201607089YA SG10201607089YA (en) 2015-09-03 2016-08-25 Photomask Blank

Country Status (7)

Country Link
US (1) US9864269B2 (ja)
EP (1) EP3139212B1 (ja)
JP (1) JP6341166B2 (ja)
KR (1) KR101965934B1 (ja)
CN (1) CN106502041B (ja)
SG (1) SG10201607089YA (ja)
TW (1) TWI648591B (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6900873B2 (ja) * 2016-12-26 2021-07-07 信越化学工業株式会社 フォトマスクブランク及びその製造方法
JP6642493B2 (ja) * 2017-03-10 2020-02-05 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク
JP7056001B2 (ja) * 2017-03-15 2022-04-19 株式会社三洋物産 遊技機
TWI755337B (zh) * 2017-07-14 2022-02-11 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法、以及顯示裝置製造方法
JP6988697B2 (ja) * 2018-05-31 2022-01-05 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びフォトマスク
JP7115281B2 (ja) * 2018-12-12 2022-08-09 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
TWI743766B (zh) * 2019-05-31 2021-10-21 南韓商S&S技術股份有限公司 空白罩幕和光罩
JP7044095B2 (ja) * 2019-05-31 2022-03-30 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びフォトマスク
JP7356857B2 (ja) * 2019-09-30 2023-10-05 アルバック成膜株式会社 マスクブランクス及びフォトマスク
JP7280171B2 (ja) * 2019-12-05 2023-05-23 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びフォトマスク
JP7331793B2 (ja) * 2020-06-30 2023-08-23 信越化学工業株式会社 フォトマスクの製造方法及びフォトマスクブランク
TWI833084B (zh) * 2021-05-21 2024-02-21 南亞科技股份有限公司 圖案化結構及其製造方法
KR102535171B1 (ko) 2021-11-04 2023-05-26 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5415953A (en) * 1994-02-14 1995-05-16 E. I. Du Pont De Nemours And Company Photomask blanks comprising transmissive embedded phase shifter
JP3093632B2 (ja) 1996-04-25 2000-10-03 日本電気アイシーマイコンシステム株式会社 半導体記憶装置
JP4027458B2 (ja) * 1996-12-14 2007-12-26 Ｈｏｙａ株式会社 Ｘ線マスクブランク及びその製造方法並びにｘ線マスクの製造方法
WO2000007072A1 (fr) * 1998-07-31 2000-02-10 Hoya Corporation Ebauche pour photomasque, photomasque, ses procedes de fabrication et procede de formage de micromodeles
US6037083A (en) * 1998-12-22 2000-03-14 Hoya Corporation Halftone phase shift mask blanks, halftone phase shift masks, and fine pattern forming method
JP4686006B2 (ja) 2000-04-27 2011-05-18 大日本印刷株式会社 ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法
JP2003195483A (ja) 2001-12-28 2003-07-09 Hoya Corp フォトマスクブランク、フォトマスク、及びそれらの製造方法
JP2003195479A (ja) 2001-12-28 2003-07-09 Hoya Corp ハーフトーン型位相シフトマスクブランク、及びハーフトーン型位相シフトマスクの製造方法
JP3093632U (ja) 2002-03-01 2003-05-16 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク
US7115343B2 (en) * 2004-03-10 2006-10-03 International Business Machines Corporation Pliant SRAF for improved performance and manufacturability
JP4407815B2 (ja) * 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4413828B2 (ja) * 2004-10-22 2010-02-10 信越化学工業株式会社 フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
TWI375114B (en) * 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
DE602006021102D1 (de) 2005-07-21 2011-05-19 Shinetsu Chemical Co Photomaskenrohling, Photomaske und deren Herstellungsverfahren
JP4933754B2 (ja) 2005-07-21 2012-05-16 信越化学工業株式会社 フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
JP4509050B2 (ja) * 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP5058735B2 (ja) * 2006-09-15 2012-10-24 Ｈｏｙａ株式会社 マスクブランクの製造方法及びマスクの製造方法
TWI457695B (zh) * 2008-03-31 2014-10-21 Hoya Corp 空白光罩及其製造方法
TWI453531B (zh) * 2008-06-25 2014-09-21 Hoya Corp 相位移空白遮罩及相位移遮罩
TWI422966B (zh) * 2009-07-30 2014-01-11 Hoya Corp 多調式光罩、光罩基底、多調式光罩之製造方法、及圖案轉印方法
KR20130024878A (ko) * 2010-04-02 2013-03-08 신에쓰 가가꾸 고교 가부시끼가이샤 포토 마스크 유닛 및 그 제조 방법
KR20140072121A (ko) * 2011-09-30 2014-06-12 호야 가부시키가이샤 몰드 블랭크, 마스터 몰드, 카피 몰드 및 몰드 블랭크의 제조 방법
US8846273B2 (en) * 2012-06-04 2014-09-30 Micron Technology, Inc. Photomasks, methods of forming a photomask, and methods of photolithographically patterning a substrate
JP6105367B2 (ja) 2013-04-24 2017-03-29 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法
JP6229466B2 (ja) * 2013-12-06 2017-11-15 信越化学工業株式会社 フォトマスクブランク

Also Published As

Publication number Publication date
US9864269B2 (en) 2018-01-09
JP2017049475A (ja) 2017-03-09
US20170068156A1 (en) 2017-03-09
CN106502041A (zh) 2017-03-15
JP6341166B2 (ja) 2018-06-13
KR20170028260A (ko) 2017-03-13
TW201727352A (zh) 2017-08-01
KR101965934B1 (ko) 2019-04-04
TWI648591B (zh) 2019-01-21
EP3139212B1 (en) 2018-01-31
EP3139212A3 (en) 2017-04-26
EP3139212A2 (en) 2017-03-08
CN106502041B (zh) 2021-03-26

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