SG10201601911PA - Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same - Google Patents
Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the sameInfo
- Publication number
- SG10201601911PA SG10201601911PA SG10201601911PA SG10201601911PA SG10201601911PA SG 10201601911P A SG10201601911P A SG 10201601911PA SG 10201601911P A SG10201601911P A SG 10201601911PA SG 10201601911P A SG10201601911P A SG 10201601911PA SG 10201601911P A SG10201601911P A SG 10201601911PA
- Authority
- SG
- Singapore
- Prior art keywords
- same
- opto
- appliances
- manufacturing
- methods
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000005693 optoelectronics Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0204—Compact construction
- G01J1/0209—Monolithic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0233—Handheld
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0271—Housings; Attachments or accessories for photometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0411—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using focussing or collimating elements, i.e. lenses or mirrors; Aberration correction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/06—Restricting the angle of incident light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0215—Compact construction
- G01J5/022—Monolithic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/0235—Spacers, e.g. for avoidance of stiction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0265—Handheld, portable
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0806—Focusing or collimating elements, e.g. lenses or concave mirrors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
- G02B13/0085—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras employing wafer level optics
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00009—Production of simple or compound lenses
- B29D11/00278—Lenticular sheets
- B29D11/00298—Producing lens arrays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00009—Production of simple or compound lenses
- B29D11/00278—Lenticular sheets
- B29D11/00307—Producing lens wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/06—Restricting the angle of incident light
- G01J2001/061—Baffles
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0031—Replication or moulding, e.g. hot embossing, UV-casting, injection moulding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Light Receiving Elements (AREA)
- Led Device Packages (AREA)
- Geophysics And Detection Of Objects (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161509346P | 2011-07-19 | 2011-07-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201601911PA true SG10201601911PA (en) | 2016-04-28 |
Family
ID=46614263
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013051164A SG191817A1 (en) | 2011-07-19 | 2012-07-10 | Opto -electronic modules and methods of manufacturing the same |
SG2013056643A SG193151A1 (en) | 2011-07-19 | 2012-07-10 | |
SG10201601911PA SG10201601911PA (en) | 2011-07-19 | 2012-07-10 | Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013051164A SG191817A1 (en) | 2011-07-19 | 2012-07-10 | Opto -electronic modules and methods of manufacturing the same |
SG2013056643A SG193151A1 (en) | 2011-07-19 | 2012-07-10 |
Country Status (8)
Country | Link |
---|---|
US (3) | US9966493B2 (en) |
EP (1) | EP2659510B1 (en) |
JP (1) | JP6162114B2 (en) |
KR (1) | KR102123128B1 (en) |
CN (2) | CN103620779B (en) |
SG (3) | SG191817A1 (en) |
TW (1) | TWI557885B (en) |
WO (1) | WO2013010284A2 (en) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101768992B1 (en) * | 2010-12-30 | 2017-08-17 | 삼성전자주식회사 | Probe card and method of testing a semiconductor device |
CN103620779B (en) | 2011-07-19 | 2016-12-28 | 赫普塔冈微光有限公司 | Optical-electric module and manufacture method thereof |
SG2014005805A (en) * | 2011-08-10 | 2014-06-27 | Heptagon Micro Optics Pte Ltd | Opto-electronic module and method for manufacturing the same |
DE102011113483B4 (en) * | 2011-09-13 | 2023-10-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Method for producing a plurality of optoelectronic components and optoelectronic component |
US9063005B2 (en) | 2012-04-05 | 2015-06-23 | Heptagon Micro Optics Pte. Ltd. | Reflowable opto-electronic module |
US8791489B2 (en) | 2012-04-05 | 2014-07-29 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic module |
EP2885817B1 (en) | 2012-08-20 | 2018-04-18 | Heptagon Micro Optics Pte. Ltd. | Fabrication of optics wafer |
EP3177003B1 (en) * | 2012-09-19 | 2021-06-30 | LG Innotek Co., Ltd. | Camera module |
US8946620B2 (en) * | 2012-10-16 | 2015-02-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Proximity sensor device with internal channeling section |
US20140160751A1 (en) * | 2012-12-11 | 2014-06-12 | Vixar Inc. | Low cost optical package |
US9613939B2 (en) * | 2013-01-10 | 2017-04-04 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic modules including features to help reduce stray light and/or optical cross-talk |
TW201436178A (en) | 2013-02-13 | 2014-09-16 | Sony Corp | Light reception/emission device |
US9322901B2 (en) * | 2013-02-20 | 2016-04-26 | Maxim Integrated Products, Inc. | Multichip wafer level package (WLP) optical device |
CN105229788B (en) * | 2013-02-22 | 2019-03-08 | 新加坡恒立私人有限公司 | Optical imaging apparatus |
US9285265B2 (en) | 2013-03-14 | 2016-03-15 | Heptagon Micro Optics Pte. Ltd. | Integrated module having multiple light emitters or sensors for televisions and other appliances |
WO2014142750A1 (en) * | 2013-03-15 | 2014-09-18 | Heptagon Micro Optics Pte. Ltd. | Non-contact thermal sensor module |
US9094593B2 (en) | 2013-07-30 | 2015-07-28 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules |
US9543354B2 (en) | 2013-07-30 | 2017-01-10 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules |
WO2015030673A1 (en) | 2013-09-02 | 2015-03-05 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic module including a non-transparent separation member between a light emitting element and a light detecting element |
WO2015050499A1 (en) * | 2013-10-01 | 2015-04-09 | Heptagon Micro Optics Pte. Ltd. | Lens array modules and wafer-level techniques for fabricating the same |
JP6590804B2 (en) * | 2013-11-22 | 2019-10-16 | ヘプタゴン・マイクロ・オプティクス・プライベート・リミテッドHeptagon Micro Optics Pte. Ltd. | Compact optoelectronic module |
CN105849892B (en) * | 2013-12-09 | 2019-05-31 | 赫普塔冈微光有限公司 | Module with the multiple optical channels for including optical element at different height above opto-electronic device |
KR102334469B1 (en) | 2013-12-10 | 2021-12-02 | 에이엠에스 센서스 싱가포르 피티이. 리미티드. | Wafer-level optical modules and methods for manufacturing the same |
SG11201606510XA (en) * | 2014-03-14 | 2016-09-29 | Heptagon Micro Optics Pte Ltd | Optoelectronic modules operable to recognize spurious reflections and to compensate for errors caused by spurious reflections |
KR102455919B1 (en) | 2014-07-25 | 2022-10-17 | 에이엠에스 센서스 싱가포르 피티이. 리미티드. | Optoelectronic modules including an image sensor having regions optically separated from one another |
US9711552B2 (en) * | 2014-08-19 | 2017-07-18 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
US9507143B2 (en) | 2014-09-19 | 2016-11-29 | Intel Corporation | Compact illumination system |
US9780080B2 (en) | 2014-10-09 | 2017-10-03 | Stmicroelectronics Pte Ltd | Method for making an optical proximity sensor by attaching an optical element to a package top plate and forming a package body to define an optical transmit cavity and an optical receive cavity |
JP6843745B2 (en) | 2014-10-14 | 2021-03-17 | ヘプタゴン・マイクロ・オプティクス・プライベート・リミテッドHeptagon Micro Optics Pte. Ltd. | Optical element stack assembly |
US9823121B2 (en) * | 2014-10-14 | 2017-11-21 | Kla-Tencor Corporation | Method and system for measuring radiation and temperature exposure of wafers along a fabrication process line |
US20160307881A1 (en) * | 2015-04-20 | 2016-10-20 | Advanced Semiconductor Engineering, Inc. | Optical sensor module and method for manufacturing the same |
WO2016191142A2 (en) * | 2015-05-27 | 2016-12-01 | Verily Life Sciences Llc | Nanophotonic hyperspectral/lightfield superpixel imager |
EP3303992A4 (en) * | 2015-06-03 | 2019-02-20 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic module operable for distance measurements |
JPWO2016208403A1 (en) * | 2015-06-23 | 2018-04-12 | ソニー株式会社 | Image sensor and electronic device |
ITUB20151963A1 (en) * | 2015-07-07 | 2017-01-07 | Lfoundry Srl | OPTICAL SENSOR WITH NARROW ANGULAR RESPONSE |
US11143750B2 (en) * | 2015-10-22 | 2021-10-12 | Ams Sensors Singapore Pte. Ltd. | Optical crosstalk calibration for ranging systems |
US10877239B2 (en) | 2015-11-12 | 2020-12-29 | Ams Sensors Singapore Pte. Ltd. | Optical element stack assemblies |
EP3405983B1 (en) * | 2016-01-20 | 2021-03-10 | Heptagon Micro Optics Pte. Ltd. | Methods for manufacturing of optoelectronic modules having fluid permeable channels |
JP6740628B2 (en) * | 2016-02-12 | 2020-08-19 | 凸版印刷株式会社 | Solid-state image sensor and manufacturing method thereof |
US11018269B2 (en) * | 2016-02-22 | 2021-05-25 | ams Sensor Singapore Pte. Ltd. | Thin optoelectronic modules with apertures and their manufacture |
US10886420B2 (en) * | 2016-04-08 | 2021-01-05 | Ams Sensors Singapore Pte. Ltd. | Thin optoelectronic modules with apertures and their manufacture |
GB2549951B (en) * | 2016-05-03 | 2019-11-20 | Metodiev Lavchiev Ventsislav | Light emitting structures and systems on the basis of group-IV material(s) for the ultra violet and visible spectral range |
US11226402B2 (en) | 2016-06-09 | 2022-01-18 | Ams Sensors Singapore Pte. Ltd. | Optical ranging systems including optical cross-talk reducing features |
FR3052556B1 (en) * | 2016-06-13 | 2018-07-06 | Parrot Drones | IMAGING ASSEMBLY FOR DRONE AND SYSTEM COMPRISING SUCH AN ASSEMBLY MOUNTED ON A FLYING DRONE |
JP6626974B2 (en) * | 2016-07-14 | 2019-12-25 | 京セラ株式会社 | Optical sensor package, optical sensor device, and electronic module |
US20180017741A1 (en) * | 2016-07-15 | 2018-01-18 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
FR3061630B1 (en) * | 2017-01-03 | 2021-07-09 | St Microelectronics Grenoble 2 | METHOD OF MANUFACTURING A COVER FOR AN ELECTRONIC BOX AND ELECTRONIC BOX INCLUDING A COVER |
JP6659612B2 (en) * | 2017-03-31 | 2020-03-04 | Hoya Candeo Optronics株式会社 | Light emitting device, light irradiation module, and light irradiation device |
CN107145854B (en) * | 2017-04-28 | 2022-10-28 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and fingerprint identification device |
CN107845627B (en) * | 2017-09-29 | 2020-02-18 | 深圳奥比中光科技有限公司 | Multiple proximity detection light sensor |
CN112074760A (en) * | 2017-12-27 | 2020-12-11 | ams传感器新加坡私人有限公司 | Photovoltaic module and method for operating same |
CN110098180B (en) * | 2018-01-31 | 2023-10-20 | 光宝新加坡有限公司 | Wafer level sensing module and manufacturing method thereof |
KR102068161B1 (en) * | 2018-03-14 | 2020-01-20 | (주)파트론 | Optical sensor package and method for manufacturig the same |
US11137581B2 (en) | 2018-09-27 | 2021-10-05 | Himax Technologies Limited | Wafer-level homogeneous bonding optical structure and method to form the same |
DE202019104670U1 (en) * | 2019-08-26 | 2019-12-10 | Tdk Electronics Ag | sensor |
KR102611602B1 (en) * | 2021-11-22 | 2023-12-07 | 이화여자대학교 산학협력단 | Opto-electronic integrated circuit |
KR102680754B1 (en) * | 2021-11-25 | 2024-07-01 | 이화여자대학교 산학협력단 | Opto-electronic device comprising test circuit |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1108846B (en) | 1977-03-26 | 1985-12-09 | Omron Tateisi Electronics Co | PHOTOELECTRIC SWITCH |
US5138150A (en) | 1990-12-14 | 1992-08-11 | Eaton Corporation | Photoelectric proximity sensor having shutter adjustment means for sensing region distance |
US5291038A (en) * | 1990-12-19 | 1994-03-01 | Sharp Kabushiki Kaisha | Reflective type photointerrupter |
US5912872A (en) | 1996-09-27 | 1999-06-15 | Digital Optics Corporation | Integrated optical apparatus providing separated beams on a detector and associated methods |
US6235141B1 (en) * | 1996-09-27 | 2001-05-22 | Digital Optics Corporation | Method of mass producing and packaging integrated optical subsystems |
US6381072B1 (en) * | 1998-01-23 | 2002-04-30 | Proxemics | Lenslet array systems and methods |
US6503126B1 (en) | 2000-09-12 | 2003-01-07 | Extrude Hone Corporation | Method and apparatus for abrading the region of intersection between a branch outlet and a passageway in a body |
JP2002197506A (en) * | 2000-12-26 | 2002-07-12 | Glory Ltd | Uv and fluorescence detecting device and its sensing method |
JP4571405B2 (en) | 2001-08-24 | 2010-10-27 | ショット アクチエンゲゼルシャフト | Manufacturing method of electronic parts |
JP2003329895A (en) | 2002-05-14 | 2003-11-19 | Sony Corp | Optical link device |
JP2004200965A (en) * | 2002-12-18 | 2004-07-15 | Sanyo Electric Co Ltd | Camera module and manufacturing method thereof |
EP1471730A1 (en) * | 2003-03-31 | 2004-10-27 | Dialog Semiconductor GmbH | Miniature camera module |
JP2005072662A (en) * | 2003-08-25 | 2005-03-17 | Sharp Corp | Light transmitting plate and manufacturing method thereof, image input apparatus using light transmitting plate |
JP2007510291A (en) * | 2003-10-27 | 2007-04-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Camera module and method of manufacturing such a camera module |
JP2004110069A (en) * | 2003-11-13 | 2004-04-08 | Nippon Sheet Glass Co Ltd | Resin lens array |
EP1569276A1 (en) | 2004-02-27 | 2005-08-31 | Heptagon OY | Micro-optics on optoelectronics |
US20050202826A1 (en) | 2004-03-12 | 2005-09-15 | Coretek Opto Corp. | Optical subassembly |
WO2006109638A1 (en) * | 2005-04-08 | 2006-10-19 | Konica Minolta Opto, Inc. | Solid-state image pickup element and method for manufacturing same |
JP4589169B2 (en) | 2005-04-28 | 2010-12-01 | シャープ株式会社 | Multi-beam optical distance sensor, self-propelled vacuum cleaner and air conditioner equipped with the same |
US20080290435A1 (en) * | 2007-05-21 | 2008-11-27 | Micron Technology, Inc. | Wafer level lens arrays for image sensor packages and the like, image sensor packages, and related methods |
US7923298B2 (en) * | 2007-09-07 | 2011-04-12 | Micron Technology, Inc. | Imager die package and methods of packaging an imager die on a temporary carrier |
TWI505703B (en) | 2007-12-19 | 2015-10-21 | Heptagon Micro Optics Pte Ltd | Optical module, wafer scale package, and method for manufacturing those |
TW200937642A (en) * | 2007-12-19 | 2009-09-01 | Heptagon Oy | Wafer stack, integrated optical device and method for fabricating the same |
TWI478808B (en) | 2007-12-19 | 2015-04-01 | Heptagon Micro Optics Pte Ltd | Manufacturing optical elements |
US8217482B2 (en) * | 2007-12-21 | 2012-07-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared proximity sensor package with reduced crosstalk |
US7920328B2 (en) * | 2008-02-28 | 2011-04-05 | Visera Technologies Company Limited | Lens module and a method for fabricating the same |
JP5031895B2 (en) | 2008-05-12 | 2012-09-26 | パイオニア株式会社 | Self-luminous sensor device and manufacturing method thereof |
JP5178393B2 (en) | 2008-08-20 | 2013-04-10 | シャープ株式会社 | Optical distance measuring sensor and electronic device |
CN102209622B (en) * | 2008-09-18 | 2014-05-28 | 数字光学东方公司 | Recessed optical surfaces |
DE102009005092A1 (en) | 2009-01-19 | 2010-09-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Device for optical navigation and its use |
US8779361B2 (en) | 2009-06-30 | 2014-07-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Optical proximity sensor package with molded infrared light rejection barrier and infrared pass components |
US20110024627A1 (en) * | 2009-07-31 | 2011-02-03 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Proximity Sensor with Ceramic Housing and Light Barrier |
US8097852B2 (en) * | 2009-09-10 | 2012-01-17 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Multiple transfer molded optical proximity sensor and corresponding method |
US9733357B2 (en) | 2009-11-23 | 2017-08-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared proximity sensor package with improved crosstalk isolation |
US8536671B2 (en) * | 2010-06-07 | 2013-09-17 | Tsang-Yu Liu | Chip package |
US8492720B2 (en) | 2010-06-08 | 2013-07-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Small low-profile optical proximity sensor |
FR2966979A1 (en) * | 2010-10-28 | 2012-05-04 | St Microelectronics Grenoble 2 | OPTICAL DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC HOUSING INCLUDING THE OPTICAL DEVICE |
GB201020024D0 (en) * | 2010-11-25 | 2011-01-12 | St Microelectronics Ltd | Radiation sensor |
CN103620779B (en) | 2011-07-19 | 2016-12-28 | 赫普塔冈微光有限公司 | Optical-electric module and manufacture method thereof |
SG10201605834YA (en) * | 2011-07-19 | 2016-09-29 | Heptagon Micro Optics Pte Ltd | Method for manufacturing passive optical components, and devices comprising the same |
-
2012
- 2012-07-10 CN CN201280006331.5A patent/CN103620779B/en active Active
- 2012-07-10 SG SG2013051164A patent/SG191817A1/en unknown
- 2012-07-10 JP JP2014520485A patent/JP6162114B2/en active Active
- 2012-07-10 SG SG2013056643A patent/SG193151A1/en unknown
- 2012-07-10 SG SG10201601911PA patent/SG10201601911PA/en unknown
- 2012-07-10 KR KR1020147003922A patent/KR102123128B1/en active IP Right Grant
- 2012-07-10 WO PCT/CH2012/000159 patent/WO2013010284A2/en active Application Filing
- 2012-07-10 CN CN201310373268.5A patent/CN103512595B/en active Active
- 2012-07-10 EP EP12743355.5A patent/EP2659510B1/en active Active
- 2012-07-17 TW TW101125647A patent/TWI557885B/en active
- 2012-07-19 US US13/553,290 patent/US9966493B2/en active Active
-
2013
- 2013-06-21 US US13/923,565 patent/US20130284906A1/en not_active Abandoned
-
2018
- 2018-03-29 US US15/939,636 patent/US11005001B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20140070532A (en) | 2014-06-10 |
WO2013010284A2 (en) | 2013-01-24 |
KR102123128B1 (en) | 2020-06-16 |
US11005001B2 (en) | 2021-05-11 |
SG193151A1 (en) | 2013-09-30 |
TWI557885B (en) | 2016-11-11 |
EP2659510B1 (en) | 2019-01-09 |
JP6162114B2 (en) | 2017-07-12 |
CN103620779B (en) | 2016-12-28 |
TW201320315A (en) | 2013-05-16 |
JP2014521226A (en) | 2014-08-25 |
US9966493B2 (en) | 2018-05-08 |
US20180226530A1 (en) | 2018-08-09 |
CN103620779A (en) | 2014-03-05 |
WO2013010284A3 (en) | 2013-07-18 |
CN103512595B (en) | 2016-08-10 |
CN103512595A (en) | 2014-01-15 |
US20130284906A1 (en) | 2013-10-31 |
SG191817A1 (en) | 2013-08-30 |
US20130019461A1 (en) | 2013-01-24 |
EP2659510A2 (en) | 2013-11-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201601911PA (en) | Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same | |
EP2789011A4 (en) | Semiconductor modules and methods of forming the same | |
HK1198303A1 (en) | Semiconductor device and method of manufacturing the same | |
EP2622644A4 (en) | Semiconductor devices and methods for manufacturing the same | |
EP2710695A4 (en) | Resonator-enhanced optoelectronic devices and methods of making same | |
GB2508781B (en) | Photovoltaic Devices | |
EP2892074A4 (en) | Power module substrate and power module | |
GB2488587B (en) | Semiconductor devices and fabrication methods | |
GB2487917B (en) | Semiconductor devices and fabrication methods | |
EP2843707A4 (en) | Semiconductor device and semiconductor device manufacturing method | |
EP2682985A4 (en) | Semiconductor module and semiconductor module manufacturing method | |
SG10201606075XA (en) | Opto-electronic module and method for manufacturing the same | |
EP2790216A4 (en) | Semiconductor device and semiconductor device manufacturing method | |
EP2793267A4 (en) | Semiconductor device and semiconductor device manufacturing method | |
EP2709148A4 (en) | Semiconductor device and manufacturing method thereof | |
EP2668678A4 (en) | Thermoelectric device and thermoelectric module having the same, and method of manufacturing the same | |
EP2858109A4 (en) | Semiconductor module and semiconductor module manufacturing method | |
EP2564420A4 (en) | Semiconductor devices having improved adhesion and methods of fabricating the same | |
GB201121727D0 (en) | Semiconductor structure and method for manufacturing the same | |
GB2503639B (en) | Semiconductor device structure and method for manufacturing the same | |
EP2750187A4 (en) | Semiconductor device and semiconductor device manufacturing method | |
SG10201400660UA (en) | Semiconductor devices and methods for fabricating the same | |
SG11201504456YA (en) | Fabrication of optical elements and modules incorporating the same | |
SG11201403958YA (en) | Semiconductor device and method of manufacturing the same | |
TWI562385B (en) | Semiconductor device and method of making the same |