SG10201507919TA - Method and apparatus for dc voltage control on rf-powered electrode - Google Patents

Method and apparatus for dc voltage control on rf-powered electrode

Info

Publication number
SG10201507919TA
SG10201507919TA SG10201507919TA SG10201507919TA SG10201507919TA SG 10201507919T A SG10201507919T A SG 10201507919TA SG 10201507919T A SG10201507919T A SG 10201507919TA SG 10201507919T A SG10201507919T A SG 10201507919TA SG 10201507919T A SG10201507919T A SG 10201507919TA
Authority
SG
Singapore
Prior art keywords
voltage control
powered electrode
powered
electrode
voltage
Prior art date
Application number
SG10201507919TA
Inventor
Rajinder Dhindsa
Eric Hudson
Alexei Marakhtanov
Andreas Fischer
Maryam Moravej
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201507919TA publication Critical patent/SG10201507919TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
SG10201507919TA 2007-03-30 2008-03-26 Method and apparatus for dc voltage control on rf-powered electrode SG10201507919TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US90934307P 2007-03-30 2007-03-30

Publications (1)

Publication Number Publication Date
SG10201507919TA true SG10201507919TA (en) 2015-10-29

Family

ID=39794867

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201507919TA SG10201507919TA (en) 2007-03-30 2008-03-26 Method and apparatus for dc voltage control on rf-powered electrode

Country Status (7)

Country Link
US (1) US9536711B2 (en)
JP (1) JP5432119B2 (en)
KR (1) KR101495368B1 (en)
CN (1) CN101653048B (en)
SG (1) SG10201507919TA (en)
TW (2) TWI525655B (en)
WO (1) WO2008121655A1 (en)

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JP6932070B2 (en) * 2017-11-29 2021-09-08 東京エレクトロン株式会社 Focus ring and semiconductor manufacturing equipment
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JP6846384B2 (en) * 2018-06-12 2021-03-24 東京エレクトロン株式会社 Method of controlling high frequency power supply of plasma processing equipment and plasma processing equipment
CN111095502B (en) * 2018-06-22 2024-04-05 东京毅力科创株式会社 Plasma processing apparatus and plasma etching method
US11557460B2 (en) 2018-07-09 2023-01-17 Lam Research Corporation Radio frequency (RF) signal source supplying RF plasma generator and remote plasma generator
WO2020050932A1 (en) 2018-09-04 2020-03-12 Applied Materials, Inc. Formulations for advanced polishing pads
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Also Published As

Publication number Publication date
CN101653048A (en) 2010-02-17
CN101653048B (en) 2015-09-23
WO2008121655A1 (en) 2008-10-09
TW200845091A (en) 2008-11-16
US9536711B2 (en) 2017-01-03
JP5432119B2 (en) 2014-03-05
KR20090129446A (en) 2009-12-16
US20080241420A1 (en) 2008-10-02
KR101495368B1 (en) 2015-02-24
JP2010524157A (en) 2010-07-15
TWI451468B (en) 2014-09-01
TW201438055A (en) 2014-10-01
TWI525655B (en) 2016-03-11

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