SE9502249D0 - Converter circuitry having at least one switching device and circuit module - Google Patents
Converter circuitry having at least one switching device and circuit moduleInfo
- Publication number
- SE9502249D0 SE9502249D0 SE9502249A SE9502249A SE9502249D0 SE 9502249 D0 SE9502249 D0 SE 9502249D0 SE 9502249 A SE9502249 A SE 9502249A SE 9502249 A SE9502249 A SE 9502249A SE 9502249 D0 SE9502249 D0 SE 9502249D0
- Authority
- SE
- Sweden
- Prior art keywords
- switching device
- circuit module
- converter circuitry
- turned
- converter
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/538—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08144—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in thyristor switches
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9502249A SE9502249D0 (sv) | 1995-06-21 | 1995-06-21 | Converter circuitry having at least one switching device and circuit module |
US08/511,118 US5661644A (en) | 1995-06-21 | 1995-08-04 | Converter circuit, circuitry having at least one switching device and circuit module |
PCT/SE1996/000755 WO1997001209A1 (en) | 1995-06-21 | 1996-06-10 | Converter circuit, circuitry having at least one switching device and circuit module |
EP96921181A EP0834212B1 (en) | 1995-06-21 | 1996-06-10 | Converter circuit, circuitry having at least one switching device and circuit module |
JP50377497A JP3804978B2 (ja) | 1995-06-21 | 1996-06-10 | 変換器回路、少なくとも1つのスイッチングデバイスを有する回路結合構成および回路モジュール |
DE69607965T DE69607965T2 (de) | 1995-06-21 | 1996-06-10 | Wandlerschaltung, schaltung mit wenigstens einem schalter und schaltungsmodul |
JP2006032743A JP4169761B2 (ja) | 1995-06-21 | 2006-02-09 | 変換器回路、少なくとも1つのスイッチング・デバイスを有する回路および回路モジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9502249A SE9502249D0 (sv) | 1995-06-21 | 1995-06-21 | Converter circuitry having at least one switching device and circuit module |
Publications (1)
Publication Number | Publication Date |
---|---|
SE9502249D0 true SE9502249D0 (sv) | 1995-06-21 |
Family
ID=20398689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9502249A SE9502249D0 (sv) | 1995-06-21 | 1995-06-21 | Converter circuitry having at least one switching device and circuit module |
Country Status (6)
Country | Link |
---|---|
US (1) | US5661644A (xx) |
EP (1) | EP0834212B1 (xx) |
JP (2) | JP3804978B2 (xx) |
DE (1) | DE69607965T2 (xx) |
SE (1) | SE9502249D0 (xx) |
WO (1) | WO1997001209A1 (xx) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE521139C2 (sv) * | 1997-03-24 | 2003-10-07 | Abb Ab | Högspänningsomriktarkrets |
SE9802908D0 (sv) | 1998-08-31 | 1998-08-31 | Abb Research Ltd | Electric circuit |
JP3955396B2 (ja) | 1998-09-17 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体サージ吸収素子 |
DE10030875C1 (de) * | 2000-06-23 | 2002-03-07 | Compact Dynamics Gmbh | Halbbrückenbaugruppe |
CN1415118A (zh) * | 2000-07-28 | 2003-04-30 | 住友电气工业株式会社 | 逆变器 |
JP2003007832A (ja) * | 2001-06-25 | 2003-01-10 | Mitsubishi Electric Corp | 半導体装置 |
JP2003164140A (ja) | 2001-11-27 | 2003-06-06 | Mitsubishi Electric Corp | 半導体変換回路及び回路モジュール |
JP4262453B2 (ja) | 2002-07-15 | 2009-05-13 | 三菱電機株式会社 | 電力半導体装置 |
JP4164409B2 (ja) * | 2003-06-13 | 2008-10-15 | 三菱電機株式会社 | 半導体パワーモジュール |
DE10335787A1 (de) * | 2003-08-05 | 2005-03-10 | Siemens Ag | Steuerbares Diodenmodul |
JPWO2006003936A1 (ja) * | 2004-07-01 | 2007-08-16 | 関西電力株式会社 | スナバ回路及びスナバ回路を有するパワー半導体装置 |
EP1734647B1 (en) * | 2004-08-26 | 2008-10-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and module using the same |
DE102006016502A1 (de) * | 2006-04-07 | 2007-10-18 | Siemens Ag | Wechselrichter |
JP4980126B2 (ja) | 2007-04-20 | 2012-07-18 | 株式会社日立製作所 | フリーホイールダイオードとを有する回路装置 |
JP5277579B2 (ja) * | 2007-07-25 | 2013-08-28 | 日産自動車株式会社 | 半導体装置 |
JP2009159184A (ja) * | 2007-12-26 | 2009-07-16 | Hitachi Ltd | フリーホイールダイオードとを有する回路装置、及び、ダイオードを用いた回路装置とそれを用いた電力変換器 |
US20110199802A1 (en) * | 2008-04-15 | 2011-08-18 | National Taiwan University Of Science And Technology | Single ended power converters operating over 50% duty cycle |
JP5577607B2 (ja) * | 2009-03-05 | 2014-08-27 | 日産自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
JP5554140B2 (ja) * | 2009-09-04 | 2014-07-23 | 三菱電機株式会社 | 電力変換回路 |
BR112012016900A2 (pt) * | 2010-01-18 | 2018-06-05 | Mitsubishi Electric Corporation | "módulo semicondutor de energia, aparelho conversoir de energia, e, vagão ferroviário" |
JP5168603B2 (ja) * | 2010-01-26 | 2013-03-21 | 株式会社デンソー | スイッチング装置 |
JP5471537B2 (ja) * | 2010-02-05 | 2014-04-16 | 三菱電機株式会社 | 直流電源装置 |
KR101356927B1 (ko) | 2010-03-17 | 2014-01-28 | 엘에스산전 주식회사 | 스위칭 전원장치 |
JP5783796B2 (ja) * | 2010-05-26 | 2015-09-24 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
JP2012015491A (ja) | 2010-06-04 | 2012-01-19 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
US9281776B2 (en) | 2011-01-31 | 2016-03-08 | Mitsubishi Electric Corporation | Power conversion apparatus including different voltage-type bridge circuits |
JP5484372B2 (ja) | 2011-02-14 | 2014-05-07 | 三菱電機株式会社 | 半導体モジュール |
DE102011006345A1 (de) * | 2011-03-29 | 2012-10-04 | Siemens Aktiengesellschaft | Modularer Mehrfachumrichter mit rückwärts leitfähigen Leistungshalbleiterschaltern |
US9299628B2 (en) * | 2011-07-11 | 2016-03-29 | Mitsubishi Electric Corporation | Power semiconductor module |
JP5932269B2 (ja) * | 2011-09-08 | 2016-06-08 | 株式会社東芝 | パワー半導体モジュール及びパワー半導体モジュールの駆動方法 |
US9248751B2 (en) * | 2013-03-15 | 2016-02-02 | Qualcomm Incorporated | Mixed semiconductor H-bridge power converters and methods related thereto |
GB2520617B (en) * | 2013-10-22 | 2020-12-30 | Abb Schweiz Ag | RC-IGBT with freewheeling SiC diode |
JP5663075B2 (ja) * | 2013-11-20 | 2015-02-04 | 株式会社日立製作所 | フリーホイールダイオードを有する回路装置、回路モジュールおよび電力変換装置 |
US9159790B2 (en) * | 2014-02-18 | 2015-10-13 | Silicon Power Corporation | Device and method for controlling the turn-off of a solid state switch (SGTO) |
JP6268038B2 (ja) | 2014-05-23 | 2018-01-24 | 株式会社日立製作所 | 半導体装置およびそれを用いた電力変換装置 |
JP2017045901A (ja) * | 2015-08-27 | 2017-03-02 | トヨタ自動車株式会社 | 還流ダイオードと車載用電源装置 |
JP6531026B2 (ja) | 2015-10-20 | 2019-06-12 | 株式会社 日立パワーデバイス | 電力変換装置 |
JP6583119B2 (ja) * | 2016-04-19 | 2019-10-02 | 株式会社デンソー | 電力変換装置 |
CN110546870B (zh) * | 2017-04-28 | 2021-06-08 | Abb瑞士股份有限公司 | 功率模块、其控制方法及使用、以及功率模块栈 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3565703A (en) * | 1969-07-09 | 1971-02-23 | Norton Research Corp | Silicon carbide junction diode |
US3745505A (en) * | 1971-10-21 | 1973-07-10 | J Harnden | Semiconductor device-metal oxide varistorheat sink assembly |
US4303877A (en) * | 1978-05-05 | 1981-12-01 | Brown, Boveri & Cie Aktiengesellschaft | Circuit for protecting storage cells |
JPS6379643U (xx) * | 1986-11-11 | 1988-05-26 | ||
JPS63283014A (ja) * | 1987-04-28 | 1988-11-18 | Sharp Corp | 炭化珪素半導体素子 |
DE68921768T2 (de) * | 1988-12-14 | 1995-11-09 | Cree Research Inc | Ultraschnelle hochtemperatur-gleichrichterdiode, eingebaut in silicium carbid. |
JPH07108098B2 (ja) * | 1989-01-31 | 1995-11-15 | 三菱電機株式会社 | 電力用半導体モジュール |
US5008735A (en) * | 1989-12-07 | 1991-04-16 | General Instrument Corporation | Packaged diode for high temperature operation |
JP2707883B2 (ja) * | 1991-09-20 | 1998-02-04 | 株式会社日立製作所 | インバータ装置 |
JP2751707B2 (ja) * | 1992-01-29 | 1998-05-18 | 株式会社日立製作所 | 半導体モジュール及びそれを使った電力変換装置 |
JPH0480970A (ja) * | 1990-07-24 | 1992-03-13 | Shindengen Electric Mfg Co Ltd | 絶縁ゲート型電界効果トランジスタ |
JP3055158B2 (ja) * | 1990-09-17 | 2000-06-26 | 日産自動車株式会社 | 炭化珪素半導体膜の製造方法 |
DE69233450T2 (de) * | 1991-09-20 | 2005-12-15 | Hitachi, Ltd. | Halbleitermodul |
CA2113336C (en) * | 1993-01-25 | 2001-10-23 | David J. Larkin | Compound semi-conductors and controlled doping thereof |
JP3192809B2 (ja) * | 1993-03-12 | 2001-07-30 | 株式会社東芝 | 高耐圧炭化珪素ショットキ−・ダイオ−ド |
JP2800735B2 (ja) * | 1994-10-31 | 1998-09-21 | 日本電気株式会社 | 半導体装置 |
-
1995
- 1995-06-21 SE SE9502249A patent/SE9502249D0/xx unknown
- 1995-08-04 US US08/511,118 patent/US5661644A/en not_active Expired - Lifetime
-
1996
- 1996-06-10 WO PCT/SE1996/000755 patent/WO1997001209A1/en active IP Right Grant
- 1996-06-10 DE DE69607965T patent/DE69607965T2/de not_active Expired - Lifetime
- 1996-06-10 JP JP50377497A patent/JP3804978B2/ja not_active Expired - Lifetime
- 1996-06-10 EP EP96921181A patent/EP0834212B1/en not_active Expired - Lifetime
-
2006
- 2006-02-09 JP JP2006032743A patent/JP4169761B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5661644A (en) | 1997-08-26 |
DE69607965D1 (de) | 2000-05-31 |
EP0834212A1 (en) | 1998-04-08 |
JP3804978B2 (ja) | 2006-08-02 |
JPH11510000A (ja) | 1999-08-31 |
WO1997001209A1 (en) | 1997-01-09 |
JP4169761B2 (ja) | 2008-10-22 |
JP2006149195A (ja) | 2006-06-08 |
DE69607965T2 (de) | 2000-08-17 |
EP0834212B1 (en) | 2000-04-26 |
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