SE8205848D0 - PROCEDURE AND DEVICE FOR Rectifier rectification - Google Patents

PROCEDURE AND DEVICE FOR Rectifier rectification

Info

Publication number
SE8205848D0
SE8205848D0 SE8205848A SE8205848A SE8205848D0 SE 8205848 D0 SE8205848 D0 SE 8205848D0 SE 8205848 A SE8205848 A SE 8205848A SE 8205848 A SE8205848 A SE 8205848A SE 8205848 D0 SE8205848 D0 SE 8205848D0
Authority
SE
Sweden
Prior art keywords
semiconductor
working element
mobilities
electrons
holes
Prior art date
Application number
SE8205848A
Other languages
Swedish (sv)
Other versions
SE445693B (en
SE8205848L (en
Inventor
K I Amirkhanov
R I Bashirov
K M Aliev
M M Gadzhialiev
Original Assignee
Dagestansky Akademmii Nauk Sss
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dagestansky Akademmii Nauk Sss filed Critical Dagestansky Akademmii Nauk Sss
Publication of SE8205848L publication Critical patent/SE8205848L/en
Publication of SE8205848D0 publication Critical patent/SE8205848D0/en
Publication of SE445693B publication Critical patent/SE445693B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Rectifiers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Bipolar Transistors (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)

Abstract

A method of rectification of the alternating current through creating a gradient of the ratio between mobilities of electrons and holes in a semiconductor by means of a temperature gradient. The temperature gradient and the bipolar conductivity are created through self heating of the material of the semiconductor with the rectified current with simultaneous cooling of a part of the material of the semiconductor, the value of the exponent //c of the temperature (T) dependence of the relationship (b) between the mobilities of the electrons and holes in the semiconductor (b T<s//c>s) being equal to no less than 0.1. The method is implemented with a device comprising a semiconductor working element (2) with non-rectifying contacts (3 and 4) and a cooler (5) adjoining to the working element (2). The dimensions of the semiconductor working element (2) are so chosen as to ensure together with the cooler (4), within the range of working currents, a non-uniform self heating by the rectified current, the gradient of the relationship between the mobilities of the electrons and holes (db/dx) being equal to no less than 0.2 cm<s-1>s and to further ensure the bipolar conductivity of the working element (2).
SE8205848A 1981-02-23 1982-10-14 PROCEDURE FOR ALTERNATING CURRENT CORRECTION AND PROCEDURE FOR IMPLEMENTATION OF THE PROCEDURE SE445693B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SU1981/000017 WO1982002982A1 (en) 1981-02-23 1981-02-23 Method and device for rectification of alternating current

Publications (3)

Publication Number Publication Date
SE8205848L SE8205848L (en) 1982-10-14
SE8205848D0 true SE8205848D0 (en) 1982-10-14
SE445693B SE445693B (en) 1986-07-07

Family

ID=21616720

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8205848A SE445693B (en) 1981-02-23 1982-10-14 PROCEDURE FOR ALTERNATING CURRENT CORRECTION AND PROCEDURE FOR IMPLEMENTATION OF THE PROCEDURE

Country Status (7)

Country Link
JP (1) JPS58500582A (en)
CA (1) CA1175478A (en)
CH (1) CH662445A5 (en)
DE (1) DE3152734C2 (en)
GB (1) GB2107520B (en)
SE (1) SE445693B (en)
WO (1) WO1982002982A1 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1049400B (en) * 1959-01-29 The Lummus Company, New York, N. Y. (V. St. A.) Process for the production of granulated phosphate fertilizers

Also Published As

Publication number Publication date
JPS58500582A (en) 1983-04-14
GB2107520B (en) 1985-04-24
DE3152734T1 (en) 1983-02-24
CA1175478A (en) 1984-10-02
SE445693B (en) 1986-07-07
WO1982002982A1 (en) 1982-09-02
DE3152734C2 (en) 1985-09-05
SE8205848L (en) 1982-10-14
GB2107520A (en) 1983-04-27
CH662445A5 (en) 1987-09-30

Similar Documents

Publication Publication Date Title
JPS53110386A (en) Semiconductor device
SE7709151L (en) COOLABLE INFRARED RADIATION ELEMENT
SE8205848L (en) PROCEDURE AND DEVICE FOR Rectifier rectification
JPS5297684A (en) Semiconductor element
GB953339A (en) Semi-conductor component with a p-n junction and cooled by a peltier cell
JPS52104076A (en) Semiconductor unit
JPS5436189A (en) Semiconductor device
JPS51128266A (en) Semiconductor unit
JPS57181162A (en) Gate turn off thyristor
JPS52120774A (en) Semiconductor device
JPS57196571A (en) Thyristor
JPS54162838A (en) Electric type floor heater
JPS556855A (en) Heat sensitive thyristor
JPS5538080A (en) Semiconductor device
JPS5441679A (en) Test method of semiconductor device
JPS53120391A (en) Semiconductor light emitting device
JPS5426553A (en) Cooling and heating device
JPS5295179A (en) Manufacture of cooling panel for semiconductor rectifier element
JPS52135281A (en) Semiconductor device
JPS5669861A (en) Semiconductor heat sensitive switch device
JPS52147148A (en) Hair iron
JPS5264287A (en) Group iii-v compound semiconductor element
JPS52114141A (en) Heating temperature control system in induction heating
JPS5373654A (en) Heat radiating panel
JPS5429582A (en) Mos semiconductor device

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 8205848-8

Effective date: 19900215

Format of ref document f/p: F