SE418433B - Halvledarelement med ett skikt av ett polymert siloxan-innehallande membranmaterial med variabel permeabilitet anbringat pa utvalda ytomraden av elementet - Google Patents

Halvledarelement med ett skikt av ett polymert siloxan-innehallande membranmaterial med variabel permeabilitet anbringat pa utvalda ytomraden av elementet

Info

Publication number
SE418433B
SE418433B SE7613873A SE7613873A SE418433B SE 418433 B SE418433 B SE 418433B SE 7613873 A SE7613873 A SE 7613873A SE 7613873 A SE7613873 A SE 7613873A SE 418433 B SE418433 B SE 418433B
Authority
SE
Sweden
Prior art keywords
siloxan
polymeric
layer
selected surface
membrane
Prior art date
Application number
SE7613873A
Other languages
English (en)
Swedish (sv)
Other versions
SE7613873L (sv
Inventor
A J Yerman
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE7613873L publication Critical patent/SE7613873L/
Publication of SE418433B publication Critical patent/SE418433B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
SE7613873A 1975-12-11 1976-12-09 Halvledarelement med ett skikt av ett polymert siloxan-innehallande membranmaterial med variabel permeabilitet anbringat pa utvalda ytomraden av elementet SE418433B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63986975A 1975-12-11 1975-12-11

Publications (2)

Publication Number Publication Date
SE7613873L SE7613873L (sv) 1977-06-12
SE418433B true SE418433B (sv) 1981-05-25

Family

ID=24565904

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7613873A SE418433B (sv) 1975-12-11 1976-12-09 Halvledarelement med ett skikt av ett polymert siloxan-innehallande membranmaterial med variabel permeabilitet anbringat pa utvalda ytomraden av elementet

Country Status (4)

Country Link
JP (1) JPS5921165B2 (de)
DE (1) DE2655725A1 (de)
FR (1) FR2335044A1 (de)
SE (1) SE418433B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1563421A (en) * 1975-12-18 1980-03-26 Gen Electric Polyimide-siloxane copolymer protective coating for semiconductor devices
GB1585477A (en) * 1976-01-26 1981-03-04 Gen Electric Semiconductors
JPS6040705B2 (ja) * 1978-06-26 1985-09-12 インタ−ナシヨナル・ビジネス・マシ−ンンズ・コ−ポレ−シヨン 電子回路の保護被覆形成方法
IL59344A (en) * 1979-03-01 1983-06-15 M & T Chemicals Inc Precursor solutions of silicone copolymer materials made from a siloxane containing a bis-amino aryl ether or thioether
DE19500235A1 (de) * 1995-01-05 1996-07-11 Roth Technik Gmbh Abdeckschicht für elektrische Leiter oder Halbleiter

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325450A (en) * 1965-05-12 1967-06-13 Gen Electric Polysiloxaneimides and their production
US3615913A (en) * 1968-11-08 1971-10-26 Westinghouse Electric Corp Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating
US3553282A (en) * 1969-09-08 1971-01-05 Gen Electric Siloxane containing polyamide acid blends
US3740305A (en) * 1971-10-01 1973-06-19 Gen Electric Composite materials bonded with siloxane containing polyimides
JPS5421073B2 (de) * 1974-04-15 1979-07-27
GB1553243A (en) * 1975-08-04 1979-09-26 Gen Electric Semiconductor
DE2655803C2 (de) * 1975-12-11 1986-04-17 General Electric Co., Schenectady, N.Y. Verfahren zum Behandeln eines ausgewählten Oberflächenbereiches eines Halbleiterelementes

Also Published As

Publication number Publication date
JPS5284974A (en) 1977-07-14
SE7613873L (sv) 1977-06-12
FR2335044B1 (de) 1982-09-17
JPS5921165B2 (ja) 1984-05-18
DE2655725A1 (de) 1977-06-16
FR2335044A1 (fr) 1977-07-08

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