SE390086B - Halvledarkomponent innefattande bl a en halvledarkropp som har tva motstaende vesentligen parallella flata ytterytor samt organ anordnade att rikta ljusenergi mot en del av den ena av nemnda ytterytor - Google Patents

Halvledarkomponent innefattande bl a en halvledarkropp som har tva motstaende vesentligen parallella flata ytterytor samt organ anordnade att rikta ljusenergi mot en del av den ena av nemnda ytterytor

Info

Publication number
SE390086B
SE390086B SE7306035A SE7306035A SE390086B SE 390086 B SE390086 B SE 390086B SE 7306035 A SE7306035 A SE 7306035A SE 7306035 A SE7306035 A SE 7306035A SE 390086 B SE390086 B SE 390086B
Authority
SE
Sweden
Prior art keywords
mentioned
flat surface
light energy
direct light
parallel flat
Prior art date
Application number
SE7306035A
Other languages
English (en)
Swedish (sv)
Inventor
J S Roberts
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of SE390086B publication Critical patent/SE390086B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4295Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Die Bonding (AREA)
  • Thyristors (AREA)
  • Led Device Packages (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Semiconductor Lasers (AREA)
SE7306035A 1972-04-28 1973-04-27 Halvledarkomponent innefattande bl a en halvledarkropp som har tva motstaende vesentligen parallella flata ytterytor samt organ anordnade att rikta ljusenergi mot en del av den ena av nemnda ytterytor SE390086B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24845372A 1972-04-28 1972-04-28

Publications (1)

Publication Number Publication Date
SE390086B true SE390086B (sv) 1976-11-29

Family

ID=22939199

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7306035A SE390086B (sv) 1972-04-28 1973-04-27 Halvledarkomponent innefattande bl a en halvledarkropp som har tva motstaende vesentligen parallella flata ytterytor samt organ anordnade att rikta ljusenergi mot en del av den ena av nemnda ytterytor

Country Status (7)

Country Link
US (1) US3796881A (US20100056889A1-20100304-C00004.png)
JP (1) JPS4949587A (US20100056889A1-20100304-C00004.png)
CH (1) CH566645A5 (US20100056889A1-20100304-C00004.png)
DE (1) DE2320472C2 (US20100056889A1-20100304-C00004.png)
FR (1) FR2182224B1 (US20100056889A1-20100304-C00004.png)
GB (1) GB1432676A (US20100056889A1-20100304-C00004.png)
SE (1) SE390086B (US20100056889A1-20100304-C00004.png)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4144541A (en) * 1977-01-27 1979-03-13 Electric Power Research Institute, Inc. Light-activated semiconductor device package unit
US4131905A (en) * 1977-05-26 1978-12-26 Electric Power Research Institute, Inc. Light-triggered thyristor and package therefore
US4136357A (en) * 1977-10-03 1979-01-23 National Semiconductor Corporation Integrated circuit package with optical input coupler
US4257058A (en) * 1979-07-05 1981-03-17 Electric Power Research Institute, Inc. Package for radiation triggered semiconductor device and method
JPS57132471U (US20100056889A1-20100304-C00004.png) * 1981-02-10 1982-08-18
JPS589372A (ja) * 1981-07-08 1983-01-19 Mitsubishi Electric Corp 光点弧サイリスタ
JPS5897864A (ja) * 1981-12-07 1983-06-10 Mitsubishi Electric Corp 光トリガサイリスタ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3590344A (en) * 1969-06-20 1971-06-29 Westinghouse Electric Corp Light activated semiconductor controlled rectifier

Also Published As

Publication number Publication date
DE2320472C2 (de) 1983-05-05
JPS4949587A (US20100056889A1-20100304-C00004.png) 1974-05-14
FR2182224A1 (US20100056889A1-20100304-C00004.png) 1973-12-07
US3796881A (en) 1974-03-12
DE2320472A1 (de) 1973-11-15
CH566645A5 (US20100056889A1-20100304-C00004.png) 1975-09-15
FR2182224B1 (US20100056889A1-20100304-C00004.png) 1977-12-30
GB1432676A (en) 1976-04-22

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