SE364450B - - Google Patents

Info

Publication number
SE364450B
SE364450B SE04512/70A SE451270A SE364450B SE 364450 B SE364450 B SE 364450B SE 04512/70 A SE04512/70 A SE 04512/70A SE 451270 A SE451270 A SE 451270A SE 364450 B SE364450 B SE 364450B
Authority
SE
Sweden
Application number
SE04512/70A
Inventor
K Reuschel
A Kersting
W Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE364450B publication Critical patent/SE364450B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
SE04512/70A 1969-04-02 1970-04-01 SE364450B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691917016 DE1917016B2 (de) 1969-04-02 1969-04-02 Verfahren zur herstellung von hohlkoerpern aus halbleiter material

Publications (1)

Publication Number Publication Date
SE364450B true SE364450B (xx) 1974-02-25

Family

ID=5730194

Family Applications (1)

Application Number Title Priority Date Filing Date
SE04512/70A SE364450B (xx) 1969-04-02 1970-04-01

Country Status (10)

Country Link
US (1) US3751539A (xx)
JP (1) JPS5010529B1 (xx)
AT (1) AT305376B (xx)
BE (1) BE748409A (xx)
CH (1) CH509825A (xx)
DE (1) DE1917016B2 (xx)
FR (1) FR2038160A1 (xx)
GB (1) GB1278361A (xx)
NL (1) NL7002013A (xx)
SE (1) SE364450B (xx)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3950479A (en) * 1969-04-02 1976-04-13 Siemens Aktiengesellschaft Method of producing hollow semiconductor bodies
US3865647A (en) * 1970-09-30 1975-02-11 Siemens Ag Method for precipitation of semiconductor material
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
US4035460A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
US4034705A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
BE789719A (fr) * 1972-05-16 1973-02-01 Siemens Ag Procede et dispositif de fabrication de corps creux en matiere semi-conductrice, en particulier des tubes en silicium
DE2229229A1 (de) * 1972-06-15 1974-01-10 Siemens Ag Verfahren zum herstellen von aus silizium oder siliziumcarbid bestehenden formkoerpern
DE2253498A1 (de) * 1972-10-31 1974-05-02 Siemens Ag Verfahren zum herstellen von mindestens einseitig offenen hohlkoerpern aus halbleitermaterial
DE2322952C3 (de) * 1973-05-07 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Horden für die Aufnahme von Kristallscheiben bei Diffusions- und Temperprozessen
DE2340225A1 (de) * 1973-08-08 1975-02-20 Siemens Ag Verfahren zum herstellen von aus halbleitermaterial bestehenden, direkt beheizbaren hohlkoerpern
DE2358053C3 (de) * 1973-11-21 1981-07-16 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper
DE2541215C3 (de) * 1975-09-16 1978-08-03 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Herstellung von Siliciumhohlkörpern
DE2618293A1 (de) * 1976-04-27 1977-11-17 Papst Motoren Kg Kollektorloser gleichstrommotor
DE2740129A1 (de) * 1976-09-18 1978-03-23 Claude John Lancelot Hunt Verfahren und vorrichtung zur metallbedampfung
DE2847632A1 (de) * 1977-11-19 1979-05-23 Claude John Lancelot Hunt Vakuummetallisierungsvorrichtung
DE2800507A1 (de) * 1978-01-05 1979-07-19 Wacker Chemitronic Verfahren zum gasdichten verbinden hochreiner siliciumformteile
DE2908288B1 (de) * 1979-03-03 1980-01-17 Heraeus Schott Quarzschmelze Glocke aus Quarzglas fuer halbleitertechnologische Zwecke
US4332751A (en) * 1980-03-13 1982-06-01 The United States Of America As Represented By The United States Department Of Energy Method for fabricating thin films of pyrolytic carbon
US5110531A (en) * 1982-12-27 1992-05-05 Sri International Process and apparatus for casting multiple silicon wafer articles
DE3336712A1 (de) * 1983-10-08 1985-04-25 Siegfried 7970 Leutkirch Marzari Dunstrohr-entlueftungseinrichtung
US5181964A (en) * 1990-06-13 1993-01-26 International Business Machines Corporation Single ended ultra-high vacuum chemical vapor deposition (uhv/cvd) reactor
WO2006110481A2 (en) * 2005-04-10 2006-10-19 Rec Silicon Inc Production of polycrystalline silicon

Also Published As

Publication number Publication date
NL7002013A (xx) 1970-10-06
DE1917016B2 (de) 1972-01-05
GB1278361A (en) 1972-06-21
US3751539A (en) 1973-08-07
JPS5010529B1 (xx) 1975-04-22
FR2038160A1 (xx) 1971-01-08
AT305376B (de) 1973-02-26
BE748409A (fr) 1970-10-02
CH509825A (de) 1971-07-15
DE1917016A1 (de) 1971-01-28

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