RU2595266C2 - Ion sputtering device (versions) - Google Patents

Ion sputtering device (versions) Download PDF

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RU2595266C2
RU2595266C2 RU2014142991/07A RU2014142991A RU2595266C2 RU 2595266 C2 RU2595266 C2 RU 2595266C2 RU 2014142991/07 A RU2014142991/07 A RU 2014142991/07A RU 2014142991 A RU2014142991 A RU 2014142991A RU 2595266 C2 RU2595266 C2 RU 2595266C2
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target
axis
upper
extended
cathode
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RU2014142991/07A
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RU2014142991A (en
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Валерий Венедиктович Алексеев
Алексей Юрьевич Малинов
Марк Муратович Криворучко
Александр Андреевич Авдиенко
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Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом"
Акционерное общество "Научно-исследовательский институт технической физики и автоматизации" (АО "НИИТФА")
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Abstract

FIELD: physics.
SUBSTANCE: invention relates to ion-plasma sputtering, in particular, to ion-beam sputtering of targets for producing thin-film conducting, semiconductor and dielectric coatings on moving or rotating substrates of large area. Ion sputtering device comprises, installed in a vacuum chamber, extending along longitudinal axis O ion source with closed electron drift with vertical axis Z, gas feed system, extended target substrate holder and a DC voltage source. Ion source includes electrically connected upper and lower magnetic conductors of a closed shape with corresponding upper and lower pole tips of cathode, which bound outlet slot with an O-shape with extended sections. parallel to longitudinal axis O, as well as arranged in, bounded by inner surfaces of upper and lower magnetic conductors, anode closed volume and a magnetic system in form of a group of evenly placed over ion source of permanent magnets, wherein anode is located opposite outlet slot. DC voltage source is connected by lead with positive potential to anode, and by grounded lead with negative potential to magnetic conductors and target. Target and substrate holder lie opposite each other and are arranged on side of lower and upper pole tips of cathode, respectively, wherein substrate holder is mounted with possibility of movement. Target is in form of a cylinder and is mounted with possibility of rotation around its axis, which is parallel to longitudinal axis of ion source O and crosses its vertical axis Z. Surface of upper and lower pole tips of cathode and opposite anode surface are parallel to each other with an inclination to target, or surface of upper and lower pole tips of cathode and opposite anode surface are parallel to vertical axis Z, wherein upper pole tip of cathode extends towards vertical axis Z relative to lower pole tip of cathode, wherein angle α between lying in one plane and crossing surface of target in common point of middle line of output slot on its extended section and normal to surface of target is selected from interval of 50-70°.
EFFECT: technical result is reduction of material consumption of target with its uniform sputtering effective.
10 cl, 3 dwg

Description

The proposal relates to the field of ion-plasma sputtering, in particular to ion-beam sputtering of targets in order to obtain thin-film conductive, semiconductor and dielectric coatings on moving or rotating large-area substrates.

Numerous devices and methods for ion sputtering targets of various configurations are known and widely used, containing a source of ions with a closed electron drift: US 6236163 Bl, US 6130507 A (patents: US 6236163 B1, IPC class H01J 7/24, published May 22, 2001; US 6130507 A, IPC class H01J 27/02, published 10.10.2000) - [1, 2], or the so-called Kaufman source: US 6063244 A, US 5492605 A (patents: US 6063244 A, IPC class C23C 19/34, published 05/16/2000; US 5,492,605 A, IPC class C23C 14/34, published 02/20/1996) - [3, 4], having a flat target fixed or rotary, single or multi-position [1, 3, 4,] and whether the target has an internal or external sprayed surface [2]. Their disadvantage is the complexity of the devices, the insufficient uniformity of sputtering of the target and, accordingly, the low coefficient of utilization of the target material, as well as the fact that they are practically not applicable for obtaining coatings on substrates of a large area.

A device is known for ion sputtering of a target RU 2510735 C2 (patent RU 2510735 C2, IPC class H01J 27/00, published 04/10/2014) - [5], containing an annular ion source with a closed electron drift, configured to form an ion beam propagating in the gap between two conventionally conical surfaces converging in the direction from the ion source to the target holder with conical surfaces with a common base bounded by a circular exit slit of the ring ion source, the generators of which are with the common axis onuses of different angles, as well as the target holder, made with the possibility of rotation and / or rotation around one or more axes. The disadvantage of this device is the difficulty of moving the target according to the proposed laws, low uniformity of sputtering and utilization of the target material, as well as the limited use of the size of the processed object.

The closest analogue to the invention is a vacuum coating device SU 1812243 A1 (patent SU 1812243 A1, IPC class C23C 14/46, published 04/30/1993) - [6], containing an ion flow generator having a discharge zone and an ion an optical system of extended geometry, which forms an extended-shape ion beam from a discharge plasma, which can be convergent, in a particular case, an ion source based on a Hall accelerator with a closed electron drift, the target, while the ion source and the target are made extended, gas supply system, movable substrate holder. The shape of the exit slit is closed O-shaped, an extended target is parallel to the discharge zone, opposite the ion source, the substrate holder is located above the extended target with the possibility of linear movement. The disadvantages of this device are the low uniformity of sputtering and, accordingly, the utilization rate of the material of a flat target, which rarely exceeds 40%.

The technical task of the invention is the creation of an extended ion sputtering device (options) that provides uniform effective sputtering of the target with an increased coefficient of utilization of the target material, which allows coating large substrates.

The technical result achieved in the invention is to save the target material with its uniform effective sputtering. This is especially true if, for the application of appropriate coatings, it is required to spray the targets from expensive materials.

The specified task according to the first embodiment of the invention is solved due to the fact that the proposed ion sputtering device contains an ion source extended along the longitudinal axis O along an electron source with a closed electron drift with a vertical axis Z, a gas supply system, an extended target, a substrate holder and a constant voltage source, wherein the ion source has electrically connected upper and lower closed magnetic circuits with the upper and lower pole tips, respectively cathodes that limit the O-shaped exit slit with extended sections parallel to the O longitudinal axis, as well as a closed-shape anode and a magnetic system in the form of a group of permanent magnets uniformly spaced along the ion source, located in the volume bounded by the internal surfaces of the upper and lower magnetic circuits, the anode is located opposite the exit slit. A constant voltage source with a positive potential end is connected to the anode, and a grounded end with a negative potential is connected to the magnetic cores and the target, which is made of conductive material. The target and the substrate holder are opposite to each other and placed on the side of the lower and upper pole tips of the cathode, respectively, while the substrate holder is fixed with the possibility of movement. In contrast to the closest analogue, the target in the proposed ion sputtering device is made in the form of a cylinder and fixed with rotation around its axis, while the axis of the target is parallel to the longitudinal axis of the ion source O and intersects its vertical axis Z, the surface of the upper and lower pole tips of the cathode and the anode surface facing them is made parallel to each other with an inclination towards the target, while the angle α between those lying in the same plane and intersecting the target surface at a common point with the middle line in the entrance slit in its extended section and normal to the target surface is selected from the interval 50–70 °; in addition, the gas supply system contains two groups of channels located symmetrically with respect to the vertical Z axis, and, in each group of channels, the output channels are uniformly arranged in a row over the extended section of the upper magnetic circuit and communicated with the inlet through parallel-serial channels having equal gas-dynamic resistance, while the output channels have the same cross section.

This task according to the second embodiment of the invention is solved due to the fact that the proposed ion sputtering device contains an ion source extended along the longitudinal axis O along an electron source with a closed electron drift with a vertical axis Z, a gas supply system, an extended target, a substrate holder and a constant voltage source, wherein the ion source has electrically connected upper and lower closed magnetic circuits with the upper and lower pole tips, respectively cathodes that limit the O-shaped exit slit with extended sections parallel to the O longitudinal axis, as well as a closed-shape anode and a magnetic system in the form of a group of permanent magnets uniformly spaced along the ion source, located in the volume bounded by the internal surfaces of the upper and lower magnetic circuits, the anode is located opposite the exit slit. A constant voltage source with a positive potential end is connected to the anode, and a grounded end with a negative potential is connected to the magnetic cores and the target, which is made of conductive material. The target and the substrate holder are opposite to each other and placed on the side of the lower and upper pole tips of the cathode, respectively, while the substrate holder is fixed with the possibility of movement. In contrast to the closest analogue, the target in the proposed ion sputtering device is made in the form of a cylinder and fixed with rotation around its axis, while the axis of the target is parallel to the longitudinal axis of the ion source O and intersects its vertical axis Z, the surface of the upper and lower pole tips of the cathode and the anode surface facing them is made parallel to the vertical axis Z of the ion source, with the upper pole tip of the cathode protruding toward the vertical axis Z of the ion source relative to the lower pole tip of the cathode, while the angle α between lying in the same plane and intersecting the target surface at a common point, the middle line of the exit slit in its extended section and the normal to the target surface is selected from the interval 50 ÷ 70 °, in addition, the gas supply system contains two groups of channels located symmetrically with respect to the vertical axis Z, and in each group of channels, the output channels are uniformly arranged in a row on an extended section of the upper magnetic circuit and communicated with the inlet through parallel but-sequential channels having equal gas-dynamic resistance, while the output channels have the same cross section.

The specified task in the first and second variants of the invention is also solved due to the fact that the extended cylindrical target rotates continuously or rotates discretely.

It is envisaged that the extended cylindrical target of the ion sputtering device according to the first and second embodiments of the invention is made in the form of a pipe and connected to a refrigerant supply system.

The specified task in the first and second variants of the invention is also solved due to the fact that the substrate holder is made flat and fixed with the possibility of linear movement relative to the ion source perpendicular to its vertical axis Z, or the substrate holder is made in the form of an extended drum, the axis of which is parallel to the axis of the cylindrical target, and is fixed with the possibility of rotation around its axis.

The essence of the technical solution of the variants of the invention is illustrated by drawings, where:

in FIG. 1 schematically shows a cross section of the proposed ion sputtering device according to the first embodiment, with the surfaces of the upper and lower pole tips of the cathode and the surface of the anode of the ion source facing them with an inclination toward the target and the electrical connection diagram of the ion sputter when connecting the target to the ground;

in FIG. 2 schematically shows the proposed ion sputtering device according to the first embodiment in perspective with a designation of the longitudinal axis of the ion source — O and its vertical axis Z;

in FIG. 3 schematically shows the cross section of the proposed ion sputtering device according to the second embodiment, with the surfaces of the upper and lower pole tips of the cathode and the anode surface facing them parallel to the vertical axis Z of the ion source and the electrical connection diagram of the ion sputter when connecting the target to the ground.

The ion sputtering device according to the first embodiment of the invention (Fig. 1) contains a source of ions of the type of an accelerator with a closed electron drift, which is extended along a longitudinal axis O and consists of an upper and lower pole tips of the cathode 1, 2, anode 3 isolated from the housing using a group of insulators 4, a gas supply system 5, a magnetic system in the form of a group of permanent magnets 6, upper and lower magnetic circuits 7, 8, as well as a target 9, a constant voltage source 10 and a substrate holder b, which can be made flat 11 or in the form of an extended drum 12. The upper and lower magnetic cores 7 and 8 are made long, closed in shape and are electrically connected to the upper and lower pole tips of the cathode 1 and 2, respectively. Moreover, the upper and lower pole tips of the cathode 1, 2 define an O-shaped exit gap with extended sections parallel to the longitudinal axis of the ion source O. Anode 3 is placed in the volume bounded by the inner surfaces of the upper and lower magnetic circuits 7 and 8 and is mounted through insulators 4 on the lower magnetic circuit 8 and the magnetic system. In this case, the anode 3 is closed in shape and is located opposite the exit slit of the ion source. The surface of the anode 3, facing the inner surfaces of the upper and lower pole tips of the cathode 1, 2, is equidistant from them around the entire perimeter of the ion source to a distance which, for structural reasons, cannot be less than 1.5 mm. The width of the exit slit is greater than or equal to the gap between the inner surfaces of the upper and lower pole tips of the cathode 1, 2 and the surface of the anode 3 facing them. Permanent magnets 6 of the magnetic system are uniformly placed along the ion source along its outer contour and are closed by poles with upper and lower magnetic circuits 7, 8. The upper and lower magnetic cores 7, 8 are interconnected, and the lower magnetic circuit 8 is simultaneously the lower part of the ion source housing, and the upper magnetic circuit 7 with it installed the gas supply system 5 is simultaneously the upper part of the housing of the ion source. The gas supply system 5 contains two groups of channels located symmetrically with respect to the vertical axis Z of the ion source, while the output channels of each channel group are uniformly arranged in a row on the corresponding extended section of the upper magnetic circuit 7 and exit into the volume bounded by the inner surfaces of the upper and lower magnetic circuits 7, 8 with anode 3. The output channels have the same cross-section and in each group of channels are connected with their inlet through parallel-consecutive channels having an equal ha architectonic resistance. Each subsequent channel, including the output channels, has one inlet and two outlet openings equidistant from the inlet, with subsequent channels communicating with the previous channels through the collector. The number of output channels and, accordingly, parallel-series-connected channels of each channel group depends on the length of the ion source and the required uniformity of gas supply. The target 9 is made of an extended cylindrical shape, in the particular case in the form of a pipe, fixed to the bottom of the ion source body through supports located at its ends (not shown) and allowing the target to rotate around its axis and attached to the refrigerant supply system (not shown), the axis of the target is parallel to the longitudinal axis of the source of ions O and intersects its vertical axis Z. A constant voltage source 10 is connected to the anode 3 with a positive potential and to the lower magnetically grounded end with a negative potential 10 a wire 8 and a target 9 made of a conductive material. The surfaces of the upper and lower pole tips of the cathode 1, 2 and the surface of the anode 3 facing them are made parallel to each other with an inclination from the vertical axis of the ion source Z to the target 9, so that the value of the angle α 13 between the center line of the exit slit lying in the same plane 14 in its extended section, drawn to the point of intersection with the surface of the target 9, the direction of which corresponds to the direction of the predominant exit of the ion beam from the source, and the normal to the surface of the target 9 at this point corresponded about the value selected from the interval 50 ÷ 70 °. Opposite the target 9 from the side of the upper pole tip of the cathode are substrates mounted either on a flat substrate holder 11, which is mounted with the possibility of linear movement relative to the ion source perpendicular to its vertical axis Z, or on the substrate holder made in the form of an extended drum 12, which is fixed to rotate around its axis and whose axis is parallel to the axis of the target 9. The proposed ion sputtering device is extended, and can be made up to several metro lengths depending on the size of the substrate holder with the substrates on which deposition is performed, as shown in FIG. 2.

The ion sputtering device according to the second embodiment of the invention (Fig. 3) contains a source of ions of the type of an accelerator with a closed electron drift, which is extended along a longitudinal axis O and consists of the upper and lower pole tips of the cathode 1, 2, anode 3 isolated from the housing using a group of insulators 4, a gas supply system 5, a magnetic system in the form of a group of permanent magnets 6, upper and lower magnetic circuits 7, 8, as well as a target 9, a constant voltage source 10 and a substrate holder b, which can be made flat 11 or in the form of an extended drum 12. The upper and lower magnetic cores 7 and 8 are made long, closed in shape and are electrically connected to the upper and lower pole tips of the cathode 1 and 2, respectively. Moreover, the upper and lower pole tips of the cathode 1, 2 define an O-shaped exit gap with extended sections parallel to the longitudinal axis of the ion source O. Anode 3 is placed in the volume bounded by the inner surfaces of the upper and lower magnetic circuits 7 and 8 and is mounted through insulators 4 on the lower magnetic circuit 8 and the magnetic system. In this case, the anode 3 is closed in shape and is located opposite the exit slit of the ion source. The upper and lower pole tips of the cathode 1, 2 are each removed from the surface of the anode 3 each facing them at an equal distance along the entire perimeter of the ion source, which, for structural reasons, cannot be less than 1.5 mm. The width of the exit slit is greater than or equal to the gap between the inner surface of the lower pole tip of the cathode 2 and the surface of the anode 3 facing it. Permanent magnets 6 of the magnetic system are uniformly spaced along the outer contour of the ion source and closed by poles with upper and lower magnetic circuits 7, 8. The upper and lower magnetic cores 7, 8 are interconnected, and the lower magnetic circuit 8 is at the same time the lower part of the ion source housing, and the upper magnetic circuit 7 with the feed system installed on it 5 is a gas at the same time the upper part of the ion source housing. The gas supply system 5 contains two groups of channels located symmetrically with respect to the vertical axis Z of the ion source, while the output channels of each group of channels are uniformly arranged in a row on the corresponding extended section of the upper magnetic circuit 7 and exit into a volume c limited by the inner surfaces of the upper and lower magnetic circuits 7, 8 anode 3. The output channels have the same cross section and in each group of channels are connected with its inlet through parallel-serial channels having equal gas dynamic resistance. Each subsequent channel, including output channels, has one inlet and two outlet openings equidistant from the inlet, with subsequent channels communicating with previous channels through a collector (not shown in the figure). The number of output channels and, accordingly, parallel-series-connected channels of each channel group depends on the length of the ion source and the required uniformity of gas supply. The target 9 is made of an extended cylindrical shape, in the particular case in the form of a pipe, fixed to the bottom of the ion source body through supports located at its ends (not shown) and allowing the target to rotate around its axis and attached to the refrigerant supply system (not shown), the axis of the target is parallel to the longitudinal axis of the source of ions O and intersects its vertical axis Z. A constant voltage source 10 is connected to the anode 3 with a positive potential and to the lower magnetically grounded end with a negative potential 10 a wire 8 and a target 9 made of a conductive material. The surfaces of the upper and lower pole tips of the cathode 1, 2 and the surface of the anode 3 facing them are made parallel to the vertical axis Z of the ion source, with the upper pole tip of the cathode 1 protruding toward the vertical axis Z of the ion source relative to the lower pole tip of the cathode 2, while the angle α 13 between the middle line of the exit slit 14 lying on the same plane along its extended section drawn to the point of intersection with the surface of the target 9, the direction of which corresponds to the direction mainly the first exit of the ion beam from the source and the normal to the surface of the target 9 at this point is selected from the interval 50–70 °. Opposite the target 9, from the side of the upper pole tip of the cathode 1, there are substrates mounted either on a flat substrate holder 11, which is mounted with the possibility of linear movement relative to the ion source perpendicular to its vertical axis Z, or on the substrate holder made in the form of an extended drum 12, which is rotatably fixed around its axis and whose axis is parallel to the axis of the target 9. The proposed ion sputtering device is extended, and can be made up to several meters long in depending on the size of the substrate holder with the substrate on which deposition is performed.

The device according to the first and second variants of the invention works as follows:

After evacuation of the vacuum chamber, where the ion sputtering device is located, to a pressure not higher than 0.0013 Pa, a working gas, usually Ar, Kr, is supplied through the gas supply system 5 to the volume bounded by the internal surfaces of the upper and lower magnetic circuits 7, 8; pressure in the vacuum chamber from 0.04 Pa to 0.08 Pa. After supplying the working gas to the anode 3 from a constant voltage source 10, a positive bias is applied relative to the housing of the ion source and the upper and lower pole tips of the cathode 1, 2 in the range from 1 to 5 kV. The electric field vector is perpendicular to the magnetic field vector from permanent magnets 6. In crossed electric and magnet fields in a closed discharge cavity bounded by the inner surfaces of the upper and lower pole tips of the cathode 1, 2 and the anode surface 3 facing them, an azimuthally closed drift arises due to the Hall effect electrons producing ionization collisions with atoms of the working gas. The ions formed due to the same applied voltage from the constant voltage source 10 are accelerated through the output gap bounded by the upper and lower pole tips of the cathode 1, 2 in the direction of the target 9 placed on their path so that the angle α 13 between those lying in the same plane and intersecting the surface of the target at a common point by the middle line of the exit slit 14 in its extended section corresponding to the direction of the predominant exit of the ion beam from the source and normal to the surface of the target 9 lies in the range 50 ÷ 7 0 °, forming a converging bunch. The indicated range of values corresponds for almost all materials to a maximum sputtering coefficient of target material 9 [7] and ensures its sputtering efficiency. Obtaining a predetermined angle α 13 is ensured according to the first embodiment of the invention by correspondingly tilting to the target 9 surfaces of the upper and lower pole tips of the cathode 1, 2 and the anode 3 surface facing them. Obtaining a predetermined angle α 13 is provided according to the second embodiment of the invention, with the surfaces the upper and lower pole tips of the cathode 1, 2 and the surface of the anode 3 facing them parallel to the vertical axis Z, due to the fact that the upper pole tip of the cathode 1 protrusion points toward the vertical Z axis relative to the lower pole tip of the cathode 2. The target 9, using a special drive located outside the vacuum chamber, rotates continuously around its axis or rotates discretely at an angle at certain intervals, which ensures its uniform atomization. The implementation of the proposed device for ion sputtering of the target in the form of a cylinder, in particular a pipe, with the possibility of rotation around its axis allows for sputtering with a high utilization of the target material. The target 9, made in the form of a pipe, is cooled during the spraying process, while the water flowing through its cavity can serve as a refrigerant. If it is necessary to cool the anode 3, it is also provided to connect it to the means of supplying refrigerant.

Uniform sputtering of the target 9 is also ensured by using two groups of channels in the gas supply system 5 with output channels evenly spaced over extended sections of the upper magnetic circuit 7 and using the principle of sequential cascade division of the input gas stream into many equal gas flows due to the fact that each the subsequent channel has one inlet and two outlet openings equidistant from the inlet, which provides equal gas-dynamic resistance of the channel fishing. Moreover, each group of channels can contain on the corresponding extended section of the upper magnetic circuit 7 to 100 or more output channels for supplying working gas to the volume with the anode 3 bounded by the internal surfaces of the upper and lower magnetic circuits 7, 8, located at a distance of 10–30 mm from each other depending on the length of the ion source and the required uniformity of gas supply. A similar gas supply system is described in detail in patent RU 2187218 (patent RU 2187218, IPC classes H05H 1/54, H01J 27/02, published 10.08.2002) - [8].

The sprayed material of the target 9 is deposited on substrates placed opposite the target 9 on a flat substrate holder 11 and performing linear spraying relative to the ion source during sputtering perpendicular to its vertical axis Z, or on an extended drum 12 spinning around its axis during spraying. The distance from the surface of the target 9 to the surface of the substrate holder is, as a rule, 50-100 mm

If necessary, to provide additional acceleration of ions extracted from the ion source during the sputtering process, the proposed ion sputtering device according to the first and second variants of the invention may contain an additional constant voltage source, the end with a negative potential of which is connected to the target, 9 and the grounded end with a positive potential - with the top and bottom magnetic circuits 7, 8.

The length of the ion sputtering device can reach several meters, depending on the tasks and the size of the substrate holders with the substrates on which the spraying is performed.

The technical result obtained as a result of the creation of an ion sputtering device according to the first and second embodiments of the invention is ensured by the use of an extended cylindrical target, in particular a target made in the form of a tube that continuously rotates or rotates through an angle at certain intervals of time, which in combination with a uniform by supplying gas to a volume with a closed discharge cavity of the ion source allows uniform sputtering of the target with an increased utilization coefficient target material. Moreover, the implementation of the ion sputtering device with the direction of incidence of the ion beam on the target in such a way that the angle α between lying in the same plane and intersecting the target surface at a common point with the middle line of the exit slit in its extended section and the normal to the target surface lies in the interval 50 ÷ 70 ° leads to effective sputtering of the target. As a result, the material of the target is saved with its uniform effective sputtering, which is especially important when sputtering targets from expensive materials.

The effectiveness and efficiency of the proposed technical solution was tested on an experimental ion sputter device manufactured according to the second embodiment of the invention, as the simplest to manufacture. A source of ions of the type of an accelerator with a closed electron drift had a length of 600 mm with an effective target sputtering zone of 480 mm. As target 9, a 12Kh18N10T stainless steel pipe with a diameter of 57 mm with a wall thickness of 3 mm and a length of 520 mm was used. As permanent magnets 6, composite samarium cobalt magnets with dimensions of 8 × 16 × 20 mm and the same residual magnetic field induction of 0.8 T were used. The gas supply system 5 contained two groups of channels with output channels, 50 output channels with a diameter of 2 mm in each group, arranged in increments of 10 mm in a row for each extended section of the upper magnetic circuit 7. The surfaces of the upper and lower pole tips of cathode 1, 2 and facing to them, the surface of the anode 3 was made parallel to the vertical axis Z of the ion source, and, the width of the exit slit was 2 mm, the gap between the inner surface of the lower pole tip of the cathode 2 and the surface of the anode 3 t kzhe was 2 mm. The upper pole tip of the cathode 1 protruded in the direction of the vertical axis Z of the ion source relative to the lower pole tip of the cathode 2 so that the gap between its inner surface and the surface of the anode 3 facing it was 2.5 mm, and the angle α 13 between the plane and intersecting the surface of the target 9 at a common point, the middle line of the exit slit 14 in its extended section corresponding to the direction of the predominant exit of the ion beam from the source, and normal to the surface of the target 9, was 50 °. This value of the angle α 13 was chosen taking into account the decrease in the diameter of the target as it sputters, which causes an increase in the angle α. During sputtering, refrigerant, in particular water, was supplied into the cavity of the target 9, while the target 9 rotated continuously at a speed of 2 revolutions per minute. The discharge voltage during the tests ranged from 1 kV to 5 kV, the discharge current ranged from 0.2 A to 1 A. In this case, the ion beam current arriving at target 9 reached 95% of the discharge current. After the tests, which were carried out in different operating modes of the ion source, the target 9 was dismantled and cut across in five places in the effective spray zone of the target with a length of 480 mm every 120 mm. After that, at different points along the cross section of the target 9, measurements were made of its residual thickness in each of the segments using a micrometer. The residual thickness of target 9 after the tests ranged from 1.85 mm to 1.88 mm. Given the accuracy of the measurements, the non-uniformity of sputtering of the target surface did not exceed 3%. Given the high uniformity of sputtering of the target surface, it can be expected that its sputtering can be carried out almost to complete wear. This means that the limit value of the coefficient of utilization of the target material can reach 97%, and therefore, the saving of the target material is ensured. The result when performing the ion sputtering device according to the first embodiment of the invention should not differ from that described above due to the absence of differences in the physical principles of ion beam formation in each of the options, while for the above parameters of the ion sputtering device, the surfaces of the upper and lower pole tips are tilted to the target 9 cathode 1, 2 and the surface of the anode 3 facing them with respect to the vertical axis Z of the ion source will be 12 °.

The technical result of the invention in operation is determined by the creation of an extended ion sputtering device with a cylindrical target rotating around its axis and located relative to the ion source, which provides a uniform gas supply, so that the angle α between the output center line lying in the same plane and intersecting the target surface at a common point the slit in its extended section and the normal to the target surface was 50–70 °.

The present invention provides uniform effective sputtering of the target with an increased coefficient of utilization of the target material, and allows the coating of large area substrates.

The use of the proposed ion sputtering device according to the first and second embodiments of the invention will allow to save the target material with its uniform effective sputtering, which is especially important when sputtering targets from expensive materials.

Based on the foregoing, the task of creating an extended ion sputtering device that provides uniform effective sputtering of the target with an increased coefficient of utilization of the target material and allows coating large substrates is solved.

Information sources

[one]. US patent 6236163 B1, IPC class H01J 7/24, published May 22, 2001.

[2]. US patent 6130507 A, IPC class H01J 27/02, published 10/10/2000.

[3]. Patent US 6063244 A, IPC class C23C 19/34, published May 16, 2000.

[four]. US patent 5492605 A, IPC class C23C 14/34, published on 02.20.1996.

[5]. Patent RU 2510735 C2, IPC class H01J 27/00, published on 04/10/2014.

[6]. Patent SU 1812243 A1, IPC class C23C 14/46, published on 04/30/1993.

[7]. Pleshivtsev N.V. Cathodic sputtering. M .: Atomizdat. 1968

[8]. Patent RU 2187218, classes IPC Н05Н 1/54, H01J 27/02, published on 08/10/2002.

Claims (10)

1. An ion sputtering device comprising a source of ions with a closed electron drift with a vertical axis Z extended in a vacuum chamber along a longitudinal axis O, a gas supply system, an extended target, a substrate holder and a constant voltage source, wherein the ion source has an electrically connected upper and closed lower magnetic circuits with respectively upper and lower pole tips of the cathode, which are limited by the O-shaped exit slit with extended sections parallel to solid axis O, as well as a closed-shape anode and a magnetic system in the form of a group of permanent magnets uniformly spaced along the ion source of permanent magnets located in the volume bounded by the internal surfaces of the upper and lower magnetic circuits, the anode being located opposite the exit slit, with the DC voltage source having a positive end potential is connected to the anode, and the grounded end with a negative potential - to the magnetic cores and the target, in addition, the target and the substrate holder are opposite each other friend and placed on the side of the lower and upper pole tips of the cathode, respectively, while the substrate holder is fixed with the possibility of movement, characterized in that the target is made in the form of a cylinder and is fixed with the possibility of rotation around its axis, while the axis of the target is parallel to the longitudinal axis of the ion source O and intersects its vertical axis Z, the surfaces of the upper and lower pole tips of the cathode and the surface of the anode facing them are made parallel to each other with an inclination to the target, while the angle α between lying in the same plane and intersecting the target surface at a common point, the middle line of the exit slit in its extended section and the normal to the target surface is selected from the interval 50 ÷ 70 °, in addition, the gas supply system contains two groups of channels located symmetrically with respect to the vertical Z axis, moreover, in each group of channels, the output channels are uniformly arranged in a row on an extended section of the upper magnetic circuit and communicated with the inlet through parallel-consecutive channels having equal gas-dynamic resistance, while the output channels have the same cross section.
2. The device according to claim 1, characterized in that the extended cylindrical target rotates continuously or rotates discretely.
3. The device according to p. 1, characterized in that the extended cylindrical target is made in the form of a pipe and is connected to a refrigerant supply system.
4. The device according to claim 1, characterized in that the substrate holder is made flat and fixed with the possibility of linear movement relative to the ion source perpendicular to its vertical axis Z.
5. The device according to p. 1, characterized in that the substrate holder is made in the form of an extended drum, the axis of which is parallel to the axis of the target, and is fixed with the possibility of rotation around its axis.
6. An ion sputtering device containing an ion source with a closed electron drift with a vertical axis Z extended along the longitudinal axis O, a gas supply system, an extended target, a substrate holder and a constant voltage source, the ion source having an electrically connected upper and closed lower magnetic circuits with respectively upper and lower pole tips of the cathode, which are limited by the O-shaped exit slit with extended sections parallel to solid axis O, as well as a closed-shape anode and a magnetic system in the form of a group of permanent magnets uniformly spaced along the ion source of permanent magnets located in the volume bounded by the internal surfaces of the upper and lower magnetic circuits, the anode being located opposite the exit slit, with the DC voltage source having a positive end potential is connected to the anode, and the grounded end with a negative potential - to the magnetic cores and the target, in addition, the target and the substrate holder are opposite each other friend and placed on the side of the lower and upper pole tips of the cathode, respectively, while the substrate holder is fixed with the possibility of movement, characterized in that the target is made in the form of a cylinder and is fixed with the possibility of rotation around its axis, while the axis of the target is parallel to the longitudinal axis of the ion source O and intersects its vertical axis Z, the surfaces of the upper and lower pole tips of the cathode and the surface of the anode facing them are made parallel to the vertical axis Z, and the upper pole tip The cathode infrared protrudes in the direction of the vertical Z axis relative to the lower pole tip of the cathode, while the angle α between those lying in the same plane and intersecting the target surface at a common point with the middle line of the exit slit in its extended section and the normal to the target surface is selected from the interval 50 ÷ 70 ° in addition, the gas supply system contains two groups of channels located symmetrically with respect to the vertical axis Z, and in each group of channels the output channels are uniformly arranged in a row on an extended section of the upper ma nitoprovoda and communicated with the inlet through a parallel-serial channels having equal flow resistance, wherein the outlet channels have the same cross section.
7. The device according to p. 6, characterized in that the extended cylindrical target rotates continuously or rotates discretely.
8. The device according to p. 6, characterized in that the extended cylindrical target is made in the form of a pipe and is connected to a refrigerant supply system.
9. The device according to p. 6, characterized in that the substrate holder is made flat and fixed with the possibility of linear movement relative to the ion source perpendicular to its vertical axis Z.
10. The device according to p. 6, characterized in that the substrate holder is made in the form of an extended drum, the axis of which is parallel to the axis of the target, and is mounted for rotation around its axis.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6236163B1 (en) * 1999-10-18 2001-05-22 Yuri Maishev Multiple-beam ion-beam assembly
RU2242821C2 (en) * 2002-10-17 2004-12-20 Институт сильноточной электроники СО РАН Magnetron spraying system
RU2510735C2 (en) * 2012-05-22 2014-04-10 Закрытое акционерное общество "Ферри Ватт" Device for target ionic sputtering and/or object surface processing and method of its application

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6236163B1 (en) * 1999-10-18 2001-05-22 Yuri Maishev Multiple-beam ion-beam assembly
RU2242821C2 (en) * 2002-10-17 2004-12-20 Институт сильноточной электроники СО РАН Magnetron spraying system
RU2510735C2 (en) * 2012-05-22 2014-04-10 Закрытое акционерное общество "Ферри Ватт" Device for target ionic sputtering and/or object surface processing and method of its application

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