RU2465645C1 - Integrated circuit chip of radiofrequency identifier - Google Patents

Abstract

FIELD: physics.

SUBSTANCE: device has a contact pad (1) lead connected to control gates of floating-gate MOS transistors of memory elements (13), with sources of diode-connected n-channels of transistors (9 and 10), a p-channel MOS transistor (4), whose drain is connected to the drain of the diode-connected n-channel transistor (5), whose source is connected to the drain of the transistor (13), with the input of a modulator (20) and with the drain of the diode-connected n-channel transistor (6), whose source and the gate of transistor (4) is connected to the positive supply bus (+Ep) (19). The leads of contact pads (2 and 3) are connected to a resonance antenna circuit. Lead (2) is connected to drains of transistors (7), (9), (11) and the gate of transistor (8), and lead (3) is connected to drains of transistors (8), (10), (12) and the gate of transistor (7). Drains of transistors (11 and 12) are connected to the positive supply bus (+Ep) (19). Sources of transistors (13) are connected to drains of address n-channel MOS transistors (14), whose sources are connected to drains of address n-channel MOS transistors (15), whose sources and drains of transistors (7) and (8) are connected to the earth bus (⊥) (18). Gates of transistors (14) and (15) are connected to outputs of row (16) and column (17) decoders, respectively.

EFFECT: smaller size of the integrated circuit chip of a radiofrequency identifier, as well as possibility of writing an individual code in a block of read-only memory elements.

1 dwg

Description

The present invention relates to the semiconductor industry, in particular to integrated circuits of radio frequency identification devices, and can be used primarily for recording an individual code of a radio frequency identifier chip by loading a charge onto a floating gate of memory elements of a read-only memory (ROM).

Currently, RFID devices are increasingly used, for example, in the field of healthcare, insurance, transport, in the field of trade, both payment means and means of identifying goods and in other areas. Each RFID device must carry a unique information code. Therefore, the main problem in the production of RFID chips is the recording of an individual code in read-only memory. The integrated circuits of the radio frequency identifier must have a minimum number of elements and external outputs, as well as realize the ability to record an individual code not only in a group or individual way, but also in assembled form.

Numerous radio frequency identification devices [1] of the H4002, H4100, H4200 series of EM MICROELECTRONIC-MARIN SA firm [SN] and the contactless integrated circuit ID identifier [2] T5557 of ATMEL CORP [US], using laser firing of fuses of a permanent memory device, are known.

However, the recording of an individual code by laser burning fusible jumpers of the ROM of each identifier chip requires the use of expensive equipment and time-consuming, and also does not realize the ability to record an individual code in the assembled device.

Also known are a non-contact identification device [3] 4100D of the company NIIME and Mikron Plant [RU] and an integrated circuit of an induction converter [4] KB5004XK2-4.5 of the company OJSC Angstrem [RU], in which information is written to ROM by electric burning of fusible jumpers.

However, contactless identification devices of this type have several disadvantages in relation to the claimed invention:

- two powerful addressable transistors with a channel width of more than 100 microns are used in the firing circuit of each fused jumper;

- during programming, when burning through the jumper and, accordingly, through the circuit of the microcircuit, large currents flow (more than 20 milliamps), which requires the use of powerful elements and protection against overloads;

- programming of an individual code is possible only in the process of testing crystals on a plate.

Closest to the claimed invention is a hybrid integrated circuit [5], consisting of a board, memory cells located on the board for storing data, a contact pad located on the board and using the first type of voltage to write data to memory cells, an external contact terminal connected to the board and using a voltage of the second type to read data from the memory cells, and a power supply circuit designed to provide the memory cells with said voltage of the first or second type by (p- np of a transistor whose emitter is connected to a power bus with a voltage of the second type, the collector of which is connected to a power bus with a voltage of the first type, the base of which is connected to a resistive divider node), a p-channel MOS transistor whose gate is connected to a power bus with a voltage of the first type, the source of which through a resistor is connected to a power bus with a voltage of the second type, the gate of which is connected to a resistive divider assembly located between two external resistors designed to divide the voltage.

The prototype works as follows: in recording mode, the external voltage from the output through the open p-n-p transistor is supplied to the high-voltage power supply bus Vpp, while the p-channel MOS transistor (p-n-p transistor) is closed and the low-voltage voltage Vdd enters the circuit from the external output. In the read mode from the EEPROM, when an external high voltage is not supplied to the output, the p-n-p transistor is closed, and the p-channel MOS transistor (p-n-p transistor) opens and transfers the external voltage Vdd to the Vpp bus.

The disadvantages of this device include the following:

- the need to use 2 power sources,

- the need to use sophisticated bi-CMOS technology,

- use of 2 additional external resistors.

The problem to which the claimed invention is directed, is to ensure that the individual code is written to the EEPROM unit of the radio-frequency identification device using a minimum number of elements and the least number of additional microcircuit pins.

The technical result of the claimed invention consists in a significant reduction in the crystal size of the integrated circuit of the radio frequency identifier, as well as the possibility of writing an individual code to the EEPROM unit after the microcircuit is assembled in the radio frequency identifier and the antenna circuit is connected to it.

This technical result is achieved by the fact that the integrated circuit of the radio frequency identifier, made on a substrate of semiconductor material, consisting of contact pads (2, 3), which are designed to be connected to a resonant antenna circuit, n-channel drains are connected to said contact pad (2) MOS transistors (7), (9), (11) and the gate of the n-channel MOS transistor (8), the drains of n-channel MOS transistors (8), (10), ( 12) and the gate of the n-channel MOS transistor (7), source Ki of the mentioned n-channel MOS transistors (7, 8) are connected to the ground bus (⊥) (18), the sources of diode-connected MOS transistors (11, 12) are connected to the positive power bus (+ Еп) (19), and the sources of diode-enabled n-channel transistors (9 and 10) are connected to the contact area (1), MOS transistors with a floating gate of the storage elements (13), the drains of which are connected to the input of the modulator (20), the sources of which are connected to the drains of the address n -MOS transistors (14), the gates of which are connected to the inputs of line decoders (16), and the sources are connected to the drain addressable n-channel MOS transistors (15), the gates of which are connected to the inputs of the column decoders (16), and the sources are connected to the ground bus (⊥) (18), according to the invention with the aim of recording an individual code of the integrated circuit of the radio frequency identifier to the contact area (1) the control gates of the MOS transistors with a floating gate of the storage elements (13) and the source of the p-channel MOS transistor (4) are connected, the gate of which is connected to the power bus (+ Еп) (19), and the drain is connected to the drain diode -shifted n-channel trans a source (5), the source of which is connected to the drain of the MOS transistor with a floating gate of the storage element (13), to the input of the modulator (20) and to the drain of the diode-switched n-channel transistor (6), the source of which is connected to the positive power bus (+ En) (19).

Thus, to realize the possibility of recording an individual code in the EEPROM of an integrated circuit of a radio-frequency identifier, it is necessary to introduce three additional transistors (4, 5, 6) and an additional output (1) into the circuit, while the geometric dimensions of the ROM elements are significantly reduced due to a decrease in recording currents .

The invention is illustrated in figure 1, which shows a schematic diagram of a device for programming information for an integrated circuit radio frequency identifier.

The inventive device consists of a contact pad (1) associated with the control gates of the MOS transistors with a floating gate of the storage elements (13), with the source of the p-channel MOS transistor (4), with the sources of the diode-connected n-channel transistors (9 and 10 ), the drain of the p-channel MOS transistor (4) is connected to the drain of the diode-switched n-channel transistor (5), the source of which is connected to the drain of the MOS transistor with a floating gate of the storage element (13), with the input of the modulator (20) and with a drain of a diode-switched n-channel transistor (6), a bus which is connected to the positive supply (+ E) (19). The gate of the p-channel MOS transistor (4) is connected to the positive power bus (19). The findings of the contact pads (2 and 3) are connected to the resonant antenna circuit. The output (2) is connected to the drains of the n-channel MOS transistors (7), (9), (11) and the gate of the transistor (8), the output (3) is connected to the drains of the n-channel MOS transistors (8), (10 ), (12) and the gate of the transistor (7). The drains of transistors (7) and (8) are connected to the ground bus (⊥) (18), the drains of the diode-switched MOS transistors (11 and 12) are connected to the positive power bus (+ Еп) (19). The sources of MOS transistors with a floating gate of the storage elements (13) are connected to the drains of address n-channel MOS transistors (14), the sources of which are connected to the drains of address n-channel MOS transistors (15). The sources of transistors (15) are connected to the ground bus (⊥) (18). The gates of the transistors (14) and (15) are connected to the outputs of the row decoders (16) and columns (17), respectively.

The device operates as follows.

In the mode of reading information on the radio channel, when the output (1) is disconnected, and the outputs (2 and 3) receive a sinusoidal signal from the antenna circuit, on the positive supply bus (19) and on the control gates of the storage elements (13) through diode-switched transistors (9, 10, 11, 12) the same voltage levels arrive, so that the p-channel MOS transistor (4) is locked and the drains of the storage elements (13) are disconnected from all elements except the modulator input. Depending on the threshold voltage level of the storage element (13), a logic level of “zero” or “unity” is formed at the modulator input at a specific address (pins 16 and 17), which, after conversion, is transmitted by the modulator to the antenna circuit.

In programming mode, when a positive voltage is applied to terminal (1) with respect to the ground bus (18), in the absence of current in the antenna circuit, the microcircuit automatically switches to programming mode, because the supply voltage (19) is always lower than the voltage supplied to the output (1) due to the voltage drop across the diode-biased transistors (5) and (6), and the p-channel transistor (4) opens. The voltage from the output (1) is supplied to the control gates of the memory MOSFETs with a floating gate (13), and through the open p-channel transistor (4) and the diode-biased n-channel transistor (5) to the drains of the memory transistors (13) and then through a diode-biased n-channel transistor (6) to the power bus (19). If at this address, determined by the state of the row decoders (16) and columns (17), the transistors 14 and 15 open, then a current flows through the channel of the transistor (13). If the voltage at terminal (1) is from 12 to 14 volts, then when current flows through the channel of the transistor (13), “hot” electrons are captured by the floating gate, the threshold voltage of the n-channel transistor (13) increases from +0.5 volts up to 4 ÷ 5 volts and the storage element goes into the state of a logical unit. If the voltage supplied to terminal (1) is from 4 to 6 volts, the current flowing through the channel of the transistor (13) does not provide the formation and capture of "hot" electrons and the storage element remains in the initial state of logical zero.

Information sources

1. Information bill No. Rev. B, 10/09 from EM MICROELECTRONIC-MARIN SA [СН] for products of the EM4200 series.

2. Description No. 4517J1-RFID-03/06 of the ATMEL CORP [US] company for the product No. Т5557 "Multifunctional 330-bit contactless integrated integrated circuit ID with read and write functions."

3. Description No. 557 of the company NIIIME and Mikron OJSC [RU] for product No. 4100D Integrated Circuit RFID Tags, May 2010

4. Induction converter KB5004XK2-4.5, certificate of registration of topology No. 20111630007 registered in the register of topologies of integrated circuits 01/11/2011 Auth. Guminov V.N., Abramov S.N., Tyurina O.N.

5. Hibrid integrated circuit device (Japanese Patent No. JP 10069792, publication date 03/10/1998, IPC G11C 7/00, Auth. NUMAZAKI KOJI [JP]; KOYASU TAKAHISA [JP]; BAN HIROYUKI [JP], also published as US patent No. US 5889722 dated March 30, 1999).

Claims (1)

An integrated circuit of a radio frequency identifier made on a substrate of semiconductor material, consisting of contact pads (2, 3), which are designed to be connected to a resonant antenna circuit, the drains of n-channel MOS transistors are connected to said contact pad (2), (7) (9), (11) and the gate of the n-channel MOS transistor (8), the drains of the n-channel MOS transistors (8), (10), (12) and the gate of the n-channel MOS transistor are connected to the aforementioned pad (3) MOSFETs (7), the sources of the mentioned n-channel MOSFETs (7, 8) under are connected to the ground bus (⊥) (18), the sources of the diode-switched MOS transistors (11, 12) are connected to the positive supply bus (+ Еп) (19), and the sources of the diode-switched n-channel transistors (9, 10) connected to the contact pad (1), MOS transistors with a floating gate of the storage elements (13), the drains of which are connected to the input of the modulator (20), the sources of which are connected to the drains of the address n-channel MOS transistors (14), the gates of which are connected to inputs of line decoders (16), and the sources are connected by drains of address n-channel MOS transistors (15), gates which are connected to the inputs of the column decoders (17), and the sources are connected to the ground bus (⊥) (18), characterized in that, in order to record an individual code of the integrated circuit of the radio frequency identifier, the control gates of the MOS transistors are connected with a floating gate of the storage elements (13), the source of the p-channel MOS transistor (4), the gate of which is connected to the positive supply bus (+ Еп) (19), and the drain is connected to the drain of the diode-biased n-channel transistor (5), the source of which is connected to the drains wrinkled MOSFETs with a floating gate of the storage element (13), to the input of the modulator (20) and to the drain of the diode-switched n-channel transistor (6), the source of which is connected to the positive supply bus (+ Еп) (19).