PT105533B - OPTOELETRONIC OSCILLATORS CONTAINING TUNNEL EFFECTS DIFFERENT PHONO-DETECTORS - Google Patents

Abstract

The present invention relates to stable low-noise phase oscillators which consist of semiconductor oscillators having a resonant tone, comprising photophase regions, capable of oscillating at frequencies up to several tens of gigahertz that modulate external or external generators or generators SIMULTANEOUSLY AN ELECTRIC SIGN AND AN OPTICAL SIGN CONTAINING AS A SUBWOOFER THE ELECTRIC SIGNAL GENERATED. THE REINJECTION OF PART OF THE OPTICAL SIGN IN THE PHOTOCONDUCTIVE REGION OF THE RESSONING TUNNEL EFFECT DYOD INCREASES THE FREQUENCY STABILITY AND THE PHASE OF OUTPUT SIGNALS THAT CAN BE CONTROLLED BY REFERENCE ELECTRICAL AND OPTICAL SIGNALS AND / OR THE POLARIZATION VOLTAGE.

Description

Figure. X

Configuration block scheme: auto-synchronization of oscillated optoeleotxdnics; involving a resonant tunnel effect diode array integrated with a photodetector, diode laser ® and / or a modulator: de eleetxxmússo.rçãoò., or self modulator exterxus ,. to a self-synchronizing optical path.

Reference endings

1- Resonant tunnel effect diode integrated with ® xotodetector. <: ·· electrical input

3 ·· DC polarization voltage

4- optical input

5- currency ': RF

4- wisdom ground drop? - diode laser

- modulator ex: fiber suit, optic / optical pairing or optical avity or the optimum strength of the acreage: optimum

XO - dptioa output

Figure 2

Scheme of -configuration -1 auto-synchronization of oscillate ?? optnalactronum involving an oscillated resonant tunnel effect diode integrated with nm fotsdstsctor. a laces? of diode cu a ro-ahsorqao oil modulator, another external modulator, and an optical path of auto?>.? SS?.? '.? Ο.ΪΧ Ç.?.! · ;. .

Reference signs

1.1- Resonant tunnel effect diode with photodetector region

11- diode laser

13- fiber dptina / optical perourso

14- DC voltage

15- electric input

15- Blas-T

17- eiêotrloa exit

18- optical input

17- Outlet: Optics

- capacitor at filter output of component bC

21- condenser at input pear, DC component filter

- electronic input of current intensity control supplied to the laser

Figure 3

Schematic of a monoilt1oamsnte integrated photon conductive resonant tonal effect diode with an optical wave guide,

Reference Signals

3- fococonductor s waveguide or Optical detector

24- semiconducting layers forming one or more potential double barrier quantum well regions

25- entrance. electric

28- electric outlet

27- optical input (fotcocn.dur.ora layer)

Figure 4

Example of a naolinear current-voltage voltage of the resonant tunnel effect diode device integrated with usa photode: ueoc.or on sss. cosa series ..laser ds identified diode & region of negative differential resi.stêrutis ..

Reference Signal

28- region of negative differential resistance.

Figure 5

RF output power spectra, traces of osoíladcr cptoel.ee t rir · ίηο; (a) in anto-oculation pruning; Auto · synchronization using a 5 dBm average optical power F, F. and using iptic fibers having the following length v X · 0,214 km in) L ~ 1,210 kp {d; X ® ·., E24 km. The frequency band and resolution of the spacecraft presented in the figs were 1 Hand and 1.0 kHs. raspaetically, reference loops

28 - Foc P. from the 1 wash raçerai qvs separate gives frequency central for about 218 kds 20- Swing Mode la t was 1. when separate gives frequency central for about 154 kdz Sidod oscillating c side. what separate gives tveqvê.noía central for about 120 Rkt

Figure 6 (a) Phase noise at 10 kkz frequency. according to the optical power am fiber for L 0.814 km and â € * 1,119 km.

The phase measured for auto-flicker mode and for auto-tuning modes for fiber optic power of approximately 4.4 dkm.

reference signs

22- X - 0.214 km

- 1. 210 km

4 - auto - oscillate

35- L - ®

36- .5 1,213 km parmwosfi ^ ada · bastion of the invention

The FETdni.òa® radí®requêniaia®Fí loves .optic waves as carriers gives FF signals through the optimal fibers for remote looai.s, tyrannical advantages of the high portability of portado® Optics, several hundred teraherta , the ease of transmis- sion in parallel by tying the multiplex rates. aytotic wave splitting (® ®, optimum fiber browning, light weight, high ® width, bandwidth and transceiver capacity # of high ® safety and interference immunity ®

e1ec t®maguét è ca s. . cs systems photon r a dió f r eg: i ento1a d® requires in ose11adores spanish from ρrodosirem s i mu 1 taneama n t e carriers Cpricas s and .1 and t. r i n s .. The oscilladots ® FF, especially my® es ssciladorss controlled by voltage {UCOs ç, s®, this.® ia.is for FF signal based communication systems. since : r a d i od i f U S systems of reception., and may still be

used to generate, control, clean, amplify® and distribute FF carriers. Flights in. ® phase®oo®d 1,000 configurations can also be used for clock signal repair, carrier recovery, signal modulation and demodulation, and frequency synthesization. The generated radio-frequency carriers may be used to carry information in any digital or analog format, where the information is inserted into the door by one. modula® adequa® scheme, côtó to amplitude marrow.

Frequency modulation, phase modulation, oyster modulation technique. RF carriers can be diffused © latches © into clear space or by means of guidewires © ondutors ©. Therefore, in order to expand the scope of application to take advantage of the properties of optical carriers, asacilators, PP photonic systems must be provided with optimum and electrotechnical carrier designs.

sun et al Çóong-Hwan © nn, Sang-bo © Rim, Kwang-seok Seo, JaeHy sng Jsng, Jong-In owner, A bigh-pomer MMXC VCO © tilizing metamorphà © 2W technology »., miorosave and Optica.1 Teotaology tatears Vel. 41, © o. 1, 2221-2224 © eprember 20 d) can evolve vCP based on an ipt-ic-vco Monolithic Integrated Service; , which can control optical device:; © tale c © © Eleotron-Abortion modulators, for use in. fiber radio networks in infrastructure-based wireless access management systems. However, as recognized by the authors, the biggest challenge is integrating © PIÇ-VCP and optoeleotreni © functions in the same © iroaito manolitàc © as a way to obtain low-basket © ptoelectronos (© EOs).

Distinct xF distances incorporating totonic technology employ carriers such as carriers for transporting _: optical fiber crisscrosses to remote locations. Transmission to optical information processing has advantages over RF egnl. It is a quasi-Oonoorhematic carrier that is capable of transposing the information in · gaalgtier. The digital format is the analog of intensity or rhythm measurement using appropriate optical modulation. In addition, certain Frog signal processing functions, such as signal alteration, can also be performed in an optical domain. This technology is beginning to be used in local access routes to provide private users with higher bandwidth communications channels. Futonic based RF technology offers several advantages, including low baud rates, 1 lane, high , width and bandwidth, security, remote control capability and immunity and electromagnetic interference, highly desirable properties in most RF systems,

With a view to achieving this objec- tive, extensive research has been undertaken to obtain simple, efficient, low-phase, low-cost, high-frequency signals capable of generating high-frequency signals of high spectral quality. success of future generations of broadband communication systems.

Conventionally, the generation of a high frequency RF signal in the optical domain has been accomplished by modulating a ÇuW diode laser or _: a Wide-Optical Modulator (MOR1) using a local frequency high frequency electrical signal. {1®} stable, Such signals are generally obtained by multiplying a low frequency signal, for example using a quartz oscillator, until the required high frequency is reached.This usually requires varion _: multiplication stages and several amplifiers. The resulting process is bulky, complex, inefficient and generally expensive.

An alternative to generating FF carriers involves mixing the two lasers with different optic frequencies.

through the beat phenomenon. Although ... the signal-bandwidth of the signal may be praying, and limited by the spectral width of the laser, and the frequency stability of the beat signal at, s. generally poor due to optical frequency deviations donates two lasers,

Recent advances in RF photonic and photographic tests have demonstrated optoelentranes (oeos?), Which are essentially a type of voltage controlled oscillator (VCO) with no 6ptine and electrical outputs, capable of generating very low noise multi-tone signals from iassu.

Gsnericaeents, one. optorleotrduie oscillator (0x0} involves the management of ultra-pure RF signals in the electrical and optical optics and whose operation can be controlled by electrical and / or optimum signals and a close OEO signaling gives rise to these. requirements, capable of producing almost quasi-microwave signals, has been proposed by US Patent No. 772360; X. Steve ¥ ao and Lure Maleki. · Optnslecúronà.o Osni 11ater color Fhotonie Systems, Apr, 7, im, ee Journal of Quancum Elsctron.íos, vol ... 32, Xo.),

In general, an OO includes an electrically controllable controllable optical modulator and an active feedback loop which comprises an optimal waveguide, an optical amplifier for amplifying an optical signal, an optical to electrical conversion element, such a bed detects, an amplifier for, amplification of the signal generated by the fat detector. · Elbotriaus and optical filters to produce oscillations within a range give specific frequencies.

Basically, a: 0 works as follows: an ogtoelectronic feedback loop receives the eptloa output from the controller and converts it via a photodetainer into an electrical signal that is re-injected into the qpclco module. During the process of a desired delay, the optical signal or electrical signal paths are introduced to realistically maintain the modulator phase in such a way as to sustain simultaneous oscillations in optical optical domains.

The open loop gain of the feedback loop, including a. optical freckle door, photodetector and electrical input port. should be larger, and the open-loop gain of a re-feed condition, ineffective the optical trap door, the optical trap, the fetodetector, and the power outlet port is greater than one, i.e. , always where the total OFO gain exceeds 'global browns'.

since the electromagnetic noise influence of GEO may be low extraction. CEOs can stifle microwaves with high espsotral purity and optlcms pulses with a lower temporal jitt.er ^:: . more stable oscillations s. low-phase noise compared to signals produced by non-fetal BF / microwave systems. The oscillates at the desired frequency by adjusting the length of an optical fiber or an optical wave glutton or the transfer function of a filter. electric.

of the advantages of self-healing grunts of pre-hunger configurations OEO-based RF systems can outperform most RF, there has been a compact and inexpensive way to simplify the generation of ultra-pure RF carriers in the domains and optical machines. Low-frequency, high-frequency operation enables the development of high-capacity tetanus RF monitoring systems, such as radio-over-fiber networks.

QBos are on premise gigahertz is

The advantages behind applications include radar and communication systems, a clock generator, clock extraction circuits, and atomic clocks.

aigabertx frequencies. Potential systems for partitioning from a few to several mentioned, QFG systems have been proposed in the last decade,

i.nollowing the icteric indicators based on monol oscillators. (Ird?), Or using phosphate-implemented semiconductor lasers implemented in optical injection and electrical transiators to diode modulated or modulating indium circuits, or by using expensive optoelectronic systems of certain devices such as lasers. semisoudstoras for optical signals in a wide range of generating signals: frequencies.

Briefly, the best terms and representations represent: the state of the art in the generation of 1F radio frequency signals. High purity through the hybrid combination of high purity, component: electronic and opticus in a single optoeleouronium system. Applications are very wide, including communication and testing systems and equipment measurement. The process of te-5) .100010000 used in the optee lec trenipo sharpeners consists of re-injecting a portion of the oscilladur optical output signal into the optical input port of the oscillator and taking advantage of a high quality faetox component and low losses: [1] [4], - such as high quality dplloa fiber with high quality noise q This process: allows xF signals to be generated simultaneously in the optical and noise domains at a low noise level, only requiring the initiation of sites RF External, Various boreholes demonstrated for obtaining spectrally pure RF signals using, for example, external modulation.

ed Imota se laser siienudutorss in conjunction with s ds / sptosl-sot rdn.iea utilities Injecting an optical path of resuscitation and optimum pounds of full length taking advantage of its optoelectronic oscillator lows has also been demonstrated using However, all of these implementations require amplifiers: elliptical and biphilic amplifiers are the most elusive eutus that contribute to system noise (li - [4). ], while also increasing the power consumption of optoelectronic oscillations, oscillates hard to those not described in patent documents 1 to 4 and documents 1 to 2.

eple-xidadd is the neuessidadu of the use of preamplifiers for the signals of the photodetters. Low Noise Microphone Amplifiers _: Skeptic Amplifiers and Narrowband Microphone Filter-Ops, or allow the generalized use of proposed modifications. There is therefore a need to create complex, energy-efficient handheld methods for the generation of high spectral purity RF signals simultaneously with the electrical and cpti domains needed for future RF lottery systems, and to incorporate new functionalities. in order to further simplify the process of generating ultra-low-noise and low-noise tactile FF signals in the electic domain name in the optical domain.

The methods and methods presented in the present invention are intended to overcome these and other needs by novel ways of generating ultra-pure and low phase noise FF signals simultaneously in the electric to pulse domains, with. the higher level of integration, and the consequently lower energy consumption, by employing a single device / structure that will simultaneously combine the functionality of the amplification, the filtering and the electrical filtering and operates as one. Managed Voltage Controlled Oscillator, This device corresponds to a double potential barrier quantum well semiconductor structure, with a photo-transducer layer, sundó designated hereinafter referred to as a tunnel effect diode, resonant photodeteotor, or photodeteotor tunneling diode ( iesonant Tcuneling úode de Fhotodeteotur, x'b-PD, in English designation}.

The resonant tuning diodes çRTúsi are nano and semiconductor trams that can have negative differential conductance. ($ DC) over a wide frequency band, being able to produce basic oscillatory oscillations of greater than 1 THa, which makes them the fastest electronically active slides operating at room temperature. The resonant tunnel effect diodes which may contain one or more blending regions consist of. in semiconductor structures typically formed by one. alumina avssnite layer or a ternary compound, for example lunnns, typically dnstrum thick, a layer of a ternary or quaternary compound, for example

XndaAs ο · 3 1NoAAlAs, typically with nanometers thick and an aluminum layer or a ternary compound, for example InAiAs, typically 2 nanometers thick, referred to as the double-potential quantum-well structure, angled enter two layers of a teiouiric compound <> · .; <gjaturnârso _: for example X.uGaAs or XxiGaAlAB or XxidaA-SP, photoue.udu toras regions, crusts on Xn.P substrates or other substrates.

These self-supporting devices, properly integrated with suitable flow-through devices, such as chromium handles and diode lasers, increase the features and functionality of upto-wireless devices, and may lead to reduced power consumption and offer significant improvements. in modulating performance or detention, with added functions, a ves gue puds®. to operate on optical marbles to intrinsic allotropic gain-factor paths resulting from negative differential conductance. Thus, the ellltta obtained by combining the A®Dv® with an optical to diode laser allows simultaneous generation of suitable signals and electrical signals. controlled by optical signals and / or. RTD-PEt node injected metric This method of simultaneous generation of cptieús signals to the electrics smprenando RT1> »D associated with diode lasers Optical modulators simplifies the process of simultaneous generation of ultra-pure RF signals if low noise fuse in the electoral and upt.ioo domains.

The use of resonant tunneling diodes in ptsostronic and communications systems is disclosed in the Limit / Stdz Limitation Documents in the context of the 1150 æm wave compliance moon modulation by modulating the absorption characteristics of -. a wave bowl incorporating one. BTD. Furthermore, CS5Sls76i documents discloses the ASO a diode resonant timelamente to modulate © solid from a laser via ^u mode • louking on an optical comunioações system _Λ of Nevertheless, these doeusantos not reveal the moon modulation laser m mi. even using the RTD-PD output which modulation (retention) gives an FF optical signal by attaching a photo-conductive layer added to the well structure _: double potential barrier quantum.

The present inventors have repeatedly demonstrated that the hybrid integration of an FTF cw W laser diode (FTD-LF) can function as a voltage controlled optoelectronic oscillator, as well as monolithic integration of an RTD into a falling optoid waveguide contains a tatnóndatura samleconductor alloy , .fo.rman.de an RTÉ-FD, which can function as an RT? D voltage controlled oscillator {^ Reaonant Tunneliug Finde Voltage: Cpnt.ro'1 led Oscillator ^í; , rfd-vco) optically controlled.

For example, an RTD-vco may produce high frequency elutral oscillation that can be used to control a laser diode in a circuit of, for example. Figueiredo st al. 2cot pself-oscillatlou and perlud adding frem rasonant, tunnel.ins dlode-laser biode cirouit * 0 .. M, il, Figueiredo, and, first, fJ sllght, 1. ang, s, wasige, cn frunside, elsctronics batlers, volume 44, Issue 14, diily 3,108, pages 676-877}; Sligbt et al 2 806 (Lutegration Of a rssonant toucailúg cinde and au optic conunic & tiuus Iaser ^i! TJ Light, ç.F. lronside> CF., Ftanlay, M. doptlnsun, C, D, Farmar, Fhotonios Teohnology Lettsrs, XEFÉ Volume 18 , losue 14, duly .2036, paid 1518-1620}; and olight and irnuside 2SU7 { ^s xnveetigation into its integration of a

Resoriant Tunnelinq Piode art an. Optical CW ^ nunicatíons õasér; Modal and Ezpaximsnt ”.. Tu dligbt ,. CN Ironside. ΙΞΜ dl Qty. Dlé®. 43. 7, pp. S80-S27, 2007} _s whose contents are incorporated in their entirety as references.

It is also known that the diodes resonate tuning, for example. formed using photoconductive semiconductor alloys respond electronically when illuminated with a modulated optical signal. An example of this resonant tabulating diode is the semiconductor waveguide containing the diode tuning resonant tunnel (RTD-OM? .. This type of device with negative differential resistance acts simultaneously as a photodetector ( PD) ® osoilador which can be controlled by optical signals: injected, allowing the control of the high frequency oscillations produced by the resonant tuning diode, thus a circuit contains one PT PT-PD-V00- High-Frequency Optical and Optical Signal Preductors Controlled by Injected Electrical Optical Signals® which can be used to control E1 circuits or photéuló RF circuits See, for example, Monllnear Dynamics or Resonant Vonnel .íng Optoalectxonlc Circuite for Mreiess / Optical Interfaces. ”Whore, Bruno; Figueiredo, José, ãlight, Tnomas; - Mang. Diquan; Aasíge, sdsard; Ironsl.de, Oharlle; Keily, Aunhony: Gresn, Ríc bani; IEFP d, Quant. Eleotron., ®S {11}, the contents of which are incorporated herein by reference in their entirety.

Preferred object of Provisional Application Patent SE C. S 2 0.4 3 2, 3deposes 11da cm 2 November 7, 10 01 _s ^kt Telecommuniations Intarfaoing Systems and Metnodr, the contents of which are incorporated herein by reference in their entirety.

They are oscillating interfaces with necat ive differential switching (NDCÚ for stations: t wireless signal bases: capable of converting aleotropic signals into optical signals, and vice versa. low cost and bring improvements in reliability.

A recent study showed that an FTD can be integrated with an LD (see Elight et al 20 (> õ, above)) and that a hybrid RTDLD circuit (RTD and LD in separate ehi.ps) functions as a self-oscillating circuit that can behave as a voltage-controlled optoeleotronine oscillate, which can be synchronized with an external signal (see Figueiredo et al 2008, above). RFD-LD is the Liénard-type oscillator, which is a generalization of the oscillator of Van xler rol, and the theory of oscillator sinoroeination is well established and understood by the experts (see, for example, the free Synehronination:; a universal ocncept in nonlinsar seiscee- Pixovsby A., Eoscxiblum M., Euxths J., (Cambridgebridge University Irosa, 2001).

The present inventors have shown that RTD-VCO - LD can synchronize with the RF signal. Furthermore, it is possible to show from the biónard's theory that the subcarrier RF phase incorporated in the laser optical signal follows the phase of the PF signal which is injected into the RTD-vCO · LD ...

The RTD-VCO-LD circuitry has the considerable advantage that it can incorporate both microwave and optical functions into the same integrated circuit (OE1C), eliminating the need to use multi-circuit (Vhçolf tino Mi oronavs .i.utearsted Cirouits) circuits. Separate from the optimal circuits and .. as is the norm. In the case of Integration, not only a reduction in cost but also an increase in speed and reliability is to be expected.

(Full description and working principle of RTD® VCC-LD to optical-optical converter (E./Cç could be found in Fig. 1 and 2 I> 8 (If 1 £ - 11 to 11 on a nd period addsng fro® resonant tuning diode-laser diede citcuit, 1,3,, 1, Figueiredo, S, Rome, Td, Sllght, L. Nang, and „Nasige, C, N. Irouside ,, Eisctronios Loteara, Vol. 4, Issue 14, Juiy 3 2008, pages 373-37, the contents of which are incorporated herein by reference in their entirety.

Without external excitation, the hitherto implemented PTE-VIA-L® circuits operate as autonomous optoelectronic oscillators, producing self-sustaining, voltage-controlled oscillations between 543 MHz and 2102 MHz, which appear with subcarriers on the optical output signal. This is the natural oscillating frequency range. It is possible to implement circuits with significantly higher operating frequencies of up to several dozen OHs. In the presence of the RF signal, the auto-oscillation is synchronized with the frequency. PF injected by modulating the laser diode with an injured EF signal, Synchronization can also be controlled by adjusting both the bias voltage and the RF power of the infected signal,

The present inventors have also found that ETD-Wús self-scopes incorporating a photoconductor line can be synchronized with infected optical signals and can therefore act with optocoupled converters (O / E conversion, Ri® VCOs). incorporating a photoconductive Swiss conductive alloy (ETb-PH-VCO; when illuminated by an optical beam containing the RR port) the oscillating frequency of the optical signal is in the phase of the RFR-PD- auto-oscillations. They are now aligned with the port of the injected optical signal, the RTP-R® can be synchronized with the optical signal because the semiconductor alloys that make up the RTR-RD are photocouters and thus when illuminated they produce a slot signal which responds to the sub-carrier of the optical signal signaled. The synergization can be controlled by adjusting both the voltage of and the optical power of the injected signal.

RTPFD-VCO is also a type of oscillator

I read that. .rd, · and intatassanta considers. ·; ' here the content1a of the forced Llenard oscillator ..

'Both ®PVPò ~ LS oomd R11) ~ PD

You can sing out RF signals can be described by :; the following nonlinear coupled differential equations;

/ = 1. | ® -.sr-F + FÇ à «í <{ ₍ ) | undelpcsinQ: ®, ® «; mo is the carrier signal, RF and τ (t1 is the phase modulation function;), the opto-electromagnetic model of the RT®VCO-ub circuit has completed the rate equations for the diode range;

·. O Bf

B— '-' f - 1 ò BÕ ® r

(5) Optoelectronic model Liana rdê, equations (1-jç, provides that the frequency in phase synchronization obtained with the autonomy bTU-VCO-uE and RTb-Eb-v and the frequency ptzzma the frequency. Naturally, One of ordinary skill in the art understands that this behavior may be used for various modulation formats, including but not limited to the digital PSK.

The object of this invention is to provide methods and methods for obtaining low consumption and significantly less complex ophthalmic oscillators than typical configurations of conventional optical oscillations [11] as a result of the use of photoconductor layer containing resonant tunnel diodes,

The electrolytic oscillators obtained: in the methods and processes of this invention are simple circuits that take advantage of the typical negative differential resistance, current-voltage characteristics of the effect diodes (resonant tunnel ixTDs), which provide circuit goose in a bandwidth of extends from do hundreds to gigaherta and that in. together with an appropriate resonant circuit inducing auto-oscillations at frequencies up to hundreds of gigabárta [ti,

In addition, these oscillators provide low noise levels [S] having been reported power density noise values of about -EdO / Ht measured at 100 RHx of the self-oscillating center frequency [71, c comparing , with. the noise levels of other users using analogous analogous modes of self-oscillation published fearfully in [2] [a]. With the aim of obtaining better sound levels at auto-oscillation noise,. are useful usnalments: additional techniques involving the imagination of external fan signals [vj.

does this m.uveuçau focus them on the Uietonc> s and processes the understanding of low eonsú® cptoelectronic aseiladoves systems? and which produce stable FF signals six times largely in optical to electrical domains and which are based on a resonant tunnel diode scrubber circuit incorporating a fqtodetecbc-ra region, serially connected with a diode laser in a feed / auto-tuning configuration. optoalectronics in. g-.se one. The fraction of the medullary moon's output from the diode laser is re-infected in the osoilator with the resonant tone effect diode through the respecting photoconductive region. this system, one or. more optimum fibers are used to produce a delay in the feedback optical signal to produce a reduction in noise from auto oscillations.

This scheme, Fig. X and Fig. 3, eliminates the need to use low-noise external electronic amplifiers and optimum amplifiers that counterbalance the clutter of electro-optical ® / cç and opto-electric / I? st filters for the desired oscillation frequency section #respectivivntsnts [lj - [4j, will not eliminate the electronical amplifiers and optical amplifiers in this system, the main noise constraints in the uptoslactronic oscillators [lj -® ..] also are removed. and methods for obtaining simple configurations of optoslotonic osoils proposed herein produce low energy consumption and the relationship to eenventional optoeleucronic machines, which do not require additional outoelectronic components other than those described in the Figure for publication.

The auto-synthesization is re-used using the propellant properties of the resonant tunnel effect diode users consisting of semiconductor layers which form a double-barrier region giving potential separated by a quantum well, surrounding an adjacent toiodetector region f. 8 | , Fig. 1, connected at or parallel to a diode laser OR an external mcduladm.r,

In the following, a possible example of a configuration of a mococeXectronic scanner implemented in accordance with the methods and object of the invention is described below.

One possible system arrangement of auto-tuning corresponds to a configuration of the innovator® auto-sation, optoelectronic ration in which the modulated moon output fixation of the diode laser output or the modulator is rested at the uptioa entrance. oscillator through the ion-conducting region of the resonant tunnel effect diode.

tuning resonant affect diode sitting the photodetector region can be implemented: to operate in the 15µm wave cosiprimetite window, phasing the optluoelectric conversion of quoted epic signals. but can

also be implementing to operate in other windows of length of the wave. The elsotro-dptioa conversion oht sm ~ .se by laser diode modulation of the diode or

external modulated operating at wavelengths of approximately that nm, and may operate on other wavelength windows using: appropriate lasers or monitors, Spade Figure 1 and shown a. possible configuration ®> auto-syncru® system. using the method obtained using the methods and processes object of the invention.

The usiladox circuit: resonant tunnel effect diode counting the photoconductive layer, to yours as an optoeleutronic voltage controlled osoilator, that is, the frequency of the oscillator's anti-use a controlled by the polarization voltage adjustment ® . The principle of operation is as follows; when the resonant tonne effect diode and

polarized in region of negative differential resistance, Fig. 1 are ei da s meadow _: au t o - if 1 ties and 1 at chain. what modulate d.i rematamaute the diode laser. THE injection in a signal optics lets you sync at uses to subportedorst < l The uninjured optical signal.

A. Medullated optical output of the diode laser or modulator and then coupled using one or more single-mode optic fibers are re-injected into the resonant tunnel diode photoconduction surface. Inductive autonomous optical repositioning using autonomous systems (Tunnel diode oscillator inputs and costs, xensonant.) The operating frequency of the oscillator is essentially determined by the specific condition. The intrinsic ability of the resonant tunnel diode to be used herein is valiant of the gold wire bond used to connect the resonant tunnel diode to the diode laser.

With this simple auto sync setup. optosleotrdni.oo is obtained with optimum output and input electric ports, where the frequency fluctuations are smoothed and the noise of the oscillations is reduced significantly after the true optical signal travels through the optical fiber? caraoterí radas for presenting low losses and high quality producer.

The frequency gives operation of the single-elliptic oscillator configuration presented herein as an example of this being limited by frequency only. of the diode laser used. Do the operation on. frequency regimes above the maximum viable laser operating frequencies (> 20 ISLZ), the laser may be replaced by a spectrum absorption modulator [101, or other external modulator allowing higher operating frequencies [11], ' In optical resection, the example of the cptoeleotrduicú oscillator circuit reported herein styles at a frequency of between 1.05-1.41 liters. depending on the polarization voltage of the. When the oscillator is polarized with a voltage of approximately 2.4 V, all electrical connections and modulated optimum signals are produced. a frequency of approximately 1.4052 µs [shown from Flg. 5 ia}] and with power consumption of 0.55 F.

Fig. 5th (a} shows the typical autC FF spectrum oscillation. showing a broad spectrum caused by the fluctuations at the oscillation frequency. The oscillations electrloas produced are determined by the characteristics

the circuit and the characters ti na. PTD current-voltage.

Although the output power presented here is of the order of -14 dm, output power above d dkm can be obtained through the. component optimization (.8).

To demonstrate the concept of auto-synchronization in Figs. 5 (b), to} and (d) are presented autosynofornisional results of autonomous loops for three fiber optic lengths, ie 0.814 km, 1.218 km and 1.524 km, respectively> A. average optical power in Fiber is from F-5 dsm. The voltages show that the method of injection through the photoconductive region. improves signal quality by considerably increasing the frequency stability of the oscillations by contributing to the reduction of phase noise by either increasing the length (s) of the fiber or the power coupled to the fiber.

It is noteworthy that the results presented are limited by the sponsorship of the resonant tunnel effect diode .wtodetactua region, which can be improved by maximizing the coupling efficiency between the photoconductor region and the optical fiber, which for ur devices. 11 angry in this demonstration is estimated at about ihs. The lateral sway modes that appear follow. 0 (h) to 2 (d) are separated from the center frequency by about 212 kHe, 124 kHs- and 12 Q kHe, respectively.

These are the fear of delay time signal spacing that are related in our case depend on introduced by the state of the electrical delay, g, with optimal connections, t _! due to the in system and mode spacing and the time delay length of the optical fiber (designated in English as Froe ppsótral iangs-ç Fdió. For our route the time delay is much longer electric and the spacing of the following modes in the lateral oscillation delay type can be estimated by nu, f .......; .0 ..., 11, r% q, V deletion;

in. what Q.

::: Ç t .0, OUdOc s The refractive index and c a.

velocity of the Int. Through gives the equation anima. we estimate the following spacing values F6: L «0.614 Rm, FflA»

251 kHt; - 1,212 km, FSx 127, s kxsf, '1,224 km, VSx 1.21,2 kHn, which compares to the experimental values for fiber optic lengths exceeding 1 km shown in the additional 5s (a) to S (d), Tsenicae pruning / have been implemented to completely suppress ludasaj ãvats .. sec. organs using, for example, a configuration of two or more fibers i 12 i,

In order to verify the noise reduction level, the spectral quality measurements were performed for a single band of the output signals. The results are shown in Fig. E, self-synchronization mode the noise measured at 10 kx from the center frequency was substantially reduced as the optimum re-injection power increased and also with the delay increase, associated with increased fiber optic nudging as shown in Fig. f (a;

For an optical power at. F-2.5 ãBm fiber s optical fiber length <ie 0.314 km to 1.213 km, gs measured phase noise valeras drill -120.1 dc / Hr and -101.2 dBe / lls, respectively, as shown in rlc. 4 (hd. These values correspond to a reduction of more than 30 dB to 10 kdr when compared to autonomous oscillations without moon reinjection, Fiq, S (b ;,

In short, new methods are proposed for processes to obtain the appropriate transducers that take advantage of the characteristics and functionality of the resonant tunnel effect diode oscillator and other ion-conducting regions allowing the simplification of the means of obtaining optical-optical conversion (I / O). The. a diode laser or switch to aloptic-optical conversion [E / o; , and containing at least 'Optical slaughter' to introduce a delay in the optical repositioning signal, for example, will use an optimum fiber, such as to achieve a significant reduction in the phase noise of the mediator.

The results show that the above self-tuning system improves the quality of the output signals of the self-measurements and expects that additional techniques, such as temperature control and fiber vibration control, can have a large Impact on the performance of upcellers based on the methods and process object of the present invention.

Also, huh. a strong margin for optimizing in many aspects of the coding presented, including monolithic diode integration and resonaxite tunnel effect with the photodefector region with a diode laser or an electoral modulator ..... absorption or a semiconductor optic amplifier, to the delay route with one. high quality fautor.

The configuration presented here as a possible example is simpler and of lower energy consumption, providing a conformation without the need for electrical amplification and / or additional dptioa. Among others, it is foreseen the application in AF / mioro - 00000 photonomical systems such as, the distribution of FF endpoints in mi dptio fiber optic connection.>

Document in stop : .. · patents we ^: USA Dddisi Document in tooth · '<. , <· '« patent we BhA IdusTs Document A.D: stop 3 ·. patents we Phd Ddd §0422 Document in stop 4 5 patents we EUd © 272 $ 0277

document 1? x.s. et al., Maleki, dptoelectronic mictomave osc.Batos, doarnal of BBital Eoclaty of Amorlca-B, 13, 172 5 BB.

Dooumanto B XS. © Paleki and Ya L., Bale Bp troai © © © tB.llB.or is syotama phoronie, BEn ^fI J. BmaBum Eieotro ©. , · Vol. b, <>. 7, p. : b:, bp, dal. b ©

Renal Re 1B

BI X. b Yac and B kaleki, MBtoeleotron © eolllBor for photon © tytrema, BBE B. Qaa.af.am εΧοοβοβ, vol. 32, © 7, pp. 1B1 1145,: dal .. 1B §,

LB K. B Ba, BB Kira, BB Bull, H. BrB.isnsar, B ld®, srB BB / riBima, will ·? ·· c © opto © leCBP © İ self Br j eot i oa · loeked © soillBor®. ”2REE iBoton. B-ehnol. B:·:. , vol> 20, ©. B, pp. BBB. 200 «.

Bj A. Byat, B Varon, A. Baeoo, A, Rissoná, BB. Biliary, b.b ohz loa phase-noBe optoelaotronlo osoillator uaiag X, 5E m BE, for avioaiBa and aotospaoe eaplioati ene .. * internaiioB BpBB. Meeting r. Miorovave Bot omits, ppBBER UNDER ,. 7 2 005 -Oct. B 'BB.

Bj E. rhamakher. B. Maorissus, 2. Kraus, B. B Elijah, A. Gevrildv, B. Bhen. B Bsenstein, and B B.tBr, B B.P RBBBasad osoillator mnn <> Bthioally Intagrated BB a pnorodioda, B kiglBwva Bohnol. , vol. 25 no. 12, pp. 2570-2505, AB 1, 2000.

Bi B Eazaki, B Arada, A .. 7'raniahi, B Eagiyama, B Shlrsishi, and B Bskoyam®. ' ^v F ©: ndame.ntal The <B11B1 <b © f resonaat tunneling dlodea © nine 1 BB ai room temgserBareB Appl. Ehy ©. LeB. , vol. 77, p. 24BR 20X0>

Md 8. Vergasse, C. 2. Parker, E.F. Eram, 'Ahass aou.se of a resunant tViAj.u :. r® laxatíoA usui, llatu; r, 'Applfehyán wStt ..., VO.1. 72, no. 2d, pp. 2850--2582, Fig. 1858.

UM 1. Raeonci, L. Emllbsrg, P. there. , luudanlk.is, and 2. D. Calara, Av-ocia opA.nsl InjeeA.unking of a rasou®a: pusinalinu diods to a suitable optioal ftequsáey comb; '' Appl., Phy®, bedt. , vol. 50, no. 17, p. 17 A. 24, Apr. 200 7 ..

UM d, Romelr®, O, M. L .. Figueiredo, 71. d. Elight E. Cang, F. Wasige, C. d. Ironside, A. X. Feliy. and F. Crseu, bonlimaer uynamios uf resonant tunuelípg optuslsoi.rsnlo elrruitr for wireless / optioa 1 lutf®ce®, IFEF J. Quaatum Flautron,, vol, 45 ,. Ao, 11, pp. $ 143 -1445, dov. 2 0 A® [8j b. AufAira, d. i8. 1® Figueiredo, C. h, 1tonsIde, A. 8. Feily, and! .. d. Eligut, -Qptieal uoutrul uf the runañell resonuté: dlude c.íò.rnx4ive - phú: tu.úie osaill-A.or, IkEF PhoPQP.v Fsehnoi. beto .., vol. 22, naked. 21, pp. 1810, 2010, [101] M. Fig .iredo, €. d. Ironside, C. P. Ftanley, Flectrie fieid arir.dhlng in a resansut bunneli diode elestroabsurpt.ion modniatnr, 1EEF d. Quantum isotren. , vol 37, OU. 12, pp. 1547-1552, Gave, 2001.

111) A. A 5eed 'and K. J. Williams, Mitrerave Fhstonics,' d. Ligbtr. Tsarnol. , vol. 24, r.r. 22, pp. 4028-4841, Donate. $ 200.

; .12i X. 2. Xao ® .ud 1 ® Halekl, ^ft Mdl: tilbup optoeleutraulua llarur,? ^Ϊ IkFE; d. Quanta®. Fluotroo., Ml. 38, no, 1, pp. 72-24,0 & 0. 2800

Claims (5)

1. dm oseiládmx opt.mslemtrdnlc ©, and isextracted by a hybrid configuration, so-so · and © te © electrbmimos © Optimal cmnatitdd © may oscillators slsctrónloo tunnel effect diode rassm: © ant. and (1) (11? © © podsm ocnter w. mu mal »regions fooooo.md.ut now (13}. which include them in semi-motor structures: flown by ©: aluminum arsenide mating ternary behavior, for example: dd _: typically one hundred .3 nanometers thick, breastfed by a quaternary ternary eomoodo, by ezemnlà © lni? a.ás or lóGailhs, with tipià © aments with thickness µm © © aluminium © arsenite © a ternári © compound, for example (õúllAs, tlyi © am © dm 3 nanorecre thick, called a petenóial double-barrier quantum trapped structure (14), sandwiched between two © ama <(ss from a ternary or quaternary © eg Indads or InQaálhs or 1: Ga.0 s ?, photo regions © on dulo © as ('21}, oresed on substrates of inh u other substrates. one or more diode malers (7} (more modulader elemtro-absorption al ((!}, or other moduissdore © eleotreóptimos, is one. o o o o o o rd o n e n e t r e s t r e t r e s t o r e t e t t e optimum © 3 (13), where each one of the individual constituents are interconnected in a hybrid opte-opposite arrangement in the same group as the other. In this case, the e1 output of the resonant tunnel diode oscillator © slsotrónnc is converted to the optimum domain and re-injected post-torment after passing through an optical cavity at the optimum fmto-input. detectors © of the oscillating © electron of the tunneling effect diode for their conversion to the electric domain. 2 . A cpcosiscteoric aseiladox, described according to the aft 1 v ind 1 caçõ η, 1 ,. Exposing by deleting one or more of the opioid pathways xx may have at least one optical fiber. (13 'in one or more small or small resonant cavities or elect.so-- bptlóas (9i characters operating at least one hand in one of the wavelengths 900 - 930 nanometers, 1300 nanometrus, 1H00-133 & nanomearos, i.xnm optasleotron oscillator, described in hollow arrangements. claims no. r 1 en, ^i: 3, characterized in that it contains a resonant tunnel effect diode oscillonic diode oscillator -1 .; (: 13) contains a fmtoconduinra region or a quota-detentor; (27) .. which may contain at least one electrical input port (33) requesting to receive a radio frequency or radio control signal, at least one optical input port (37; receiving a modulated optical signal). per default signal mu is a control signal and at least one symmetrical output port (23). 4. of the optoelectron oscillator, described according to claims η. ^:: 1 and n. ^:: 3 _? characterized in that it contains a diode laser (r; (12; and either an auto-absorbing modulator or an external madaladox (3)), which has the same optical output port {.;.} and is trimmed in at least one of the regions. of the walking length 300-700 nanometers, 13 00 nana-oysters, naked x500 ~ 1303 nanometers> S · dm slsotrõnicc diode oscillator resonant tunnel effect, described with acnrd.o reivlndinações: ^1, 2 en, j .. oaraerarisado to contain a sleotrlca gate control bias voltage (14J and controls the frequency of radiofrequency uses ® as a result of the negative differential resistance (2t) of the resonant tunnel effect diode (1) (111 and which modulate and center the laser · 12) or the externe medullar; S); and by containing a laser acid-fed c-orrents intensity control sliding port 22; , £. The resonant tunnel diode electron oscillator (1.1), described in accordance with claims 1, 2 and 1, characterized in that it contains at least one. moon absorption region or a photoconductive region (23) (27) operating at least in one of the SOQ-SUO nunomdtr., 1300 nanomdtrus, or IS00-IS65 nanometer, s-wave modulated locus (IS) waveformed regions ) .. 7. pm usoilador elactrunien diode resonant inclined tunnel (1) (11) described according claims 1 or q, ^q,> 2, 3, UL. 1, which is the third function as slutoniferous filter, radio frequency signal amplifier, optical receiver and radio frequency generator in the allogeneic domain.