PH12013000318A1 - Semiconductor die singulation method and apparatus - Google Patents
Semiconductor die singulation method and apparatusInfo
- Publication number
- PH12013000318A1 PH12013000318A1 PH12013000318A PH12013000318A PH12013000318A1 PH 12013000318 A1 PH12013000318 A1 PH 12013000318A1 PH 12013000318 A PH12013000318 A PH 12013000318A PH 12013000318 A PH12013000318 A PH 12013000318A PH 12013000318 A1 PH12013000318 A1 PH 12013000318A1
- Authority
- PH
- Philippines
- Prior art keywords
- back layer
- wafer
- carrier substrate
- semiconductor die
- die singulation
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/30—Breaking or tearing apparatus
- Y10T225/304—Including means to apply thermal shock to work
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/30—Breaking or tearing apparatus
- Y10T225/371—Movable breaking tool
- Y10T225/379—Breaking tool intermediate spaced work supports
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/30—Breaking or tearing apparatus
- Y10T225/371—Movable breaking tool
- Y10T225/379—Breaking tool intermediate spaced work supports
- Y10T225/386—Clamping supports
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261723548P | 2012-11-07 | 2012-11-07 | |
US201361750520P | 2013-01-09 | 2013-01-09 | |
US201361774081P | 2013-03-07 | 2013-03-07 | |
US14/057,756 US9136173B2 (en) | 2012-11-07 | 2013-10-18 | Singulation method for semiconductor die having a layer of material along one major surface |
Publications (2)
Publication Number | Publication Date |
---|---|
PH12013000318B1 PH12013000318B1 (en) | 2015-06-01 |
PH12013000318A1 true PH12013000318A1 (en) | 2015-06-01 |
Family
ID=50622736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PH12013000318A PH12013000318A1 (en) | 2012-11-07 | 2013-10-22 | Semiconductor die singulation method and apparatus |
Country Status (6)
Country | Link |
---|---|
US (6) | US9136173B2 (de) |
KR (2) | KR102206705B1 (de) |
CN (2) | CN103811419B (de) |
DE (1) | DE202013104987U1 (de) |
PH (1) | PH12013000318A1 (de) |
TW (3) | TWI645466B (de) |
Families Citing this family (33)
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US9484260B2 (en) | 2012-11-07 | 2016-11-01 | Semiconductor Components Industries, Llc | Heated carrier substrate semiconductor die singulation method |
US9136173B2 (en) * | 2012-11-07 | 2015-09-15 | Semiconductor Components Industries, Llc | Singulation method for semiconductor die having a layer of material along one major surface |
US9219011B2 (en) * | 2013-08-29 | 2015-12-22 | Infineon Technologies Ag | Separation of chips on a substrate |
JP6251574B2 (ja) * | 2014-01-14 | 2017-12-20 | 株式会社ディスコ | 切削方法 |
US9165832B1 (en) * | 2014-06-30 | 2015-10-20 | Applied Materials, Inc. | Method of die singulation using laser ablation and induction of internal defects with a laser |
JP5959069B2 (ja) * | 2014-07-14 | 2016-08-02 | 国立研究開発法人産業技術総合研究所 | 半導体プロセス用キャリア |
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JP6407056B2 (ja) * | 2015-02-20 | 2018-10-17 | 株式会社ディスコ | 分割装置と分割方法 |
JP6490459B2 (ja) * | 2015-03-13 | 2019-03-27 | 古河電気工業株式会社 | ウェハ固定テープ、半導体ウェハの処理方法および半導体チップ |
JP6265175B2 (ja) * | 2015-06-30 | 2018-01-24 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
JP2017055012A (ja) * | 2015-09-11 | 2017-03-16 | 株式会社東芝 | デバイスの製造方法 |
JP6631782B2 (ja) * | 2015-11-16 | 2020-01-15 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
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US11075118B2 (en) | 2016-06-22 | 2021-07-27 | Semiconductor Components Industries, Llc | Semiconductor die singulation methods |
US10403544B2 (en) * | 2016-06-22 | 2019-09-03 | Semiconductor Components Industries, Llc | Semiconductor die singulation methods |
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US10283388B1 (en) | 2017-11-13 | 2019-05-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Detaping machine and detaping method |
TWI699837B (zh) * | 2017-12-20 | 2020-07-21 | 旺矽科技股份有限公司 | 多晶粒選取方法 |
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US10658240B1 (en) * | 2018-12-31 | 2020-05-19 | Texas Instruments Incorporated | Semiconductor die singulation |
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US20220270925A1 (en) * | 2019-07-22 | 2022-08-25 | Massachusetts Institute Of Technology | Flexing semiconductor structures and related techniques |
US20210296176A1 (en) * | 2020-03-23 | 2021-09-23 | Semiconductor Components Industries, Llc | Structure and method for electronic die singulation using alignment structures and multi-step singulation |
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-
2013
- 2013-10-18 US US14/057,756 patent/US9136173B2/en active Active
- 2013-10-22 PH PH12013000318A patent/PH12013000318A1/en unknown
- 2013-11-06 TW TW106126351A patent/TWI645466B/zh active
- 2013-11-06 TW TW102140335A patent/TWI601194B/zh active
- 2013-11-06 KR KR1020130134047A patent/KR102206705B1/ko active IP Right Grant
- 2013-11-06 TW TW107141259A patent/TW201916153A/zh unknown
- 2013-11-06 DE DE202013104987U patent/DE202013104987U1/de not_active Expired - Lifetime
- 2013-11-07 CN CN201310547843.9A patent/CN103811419B/zh active Active
- 2013-11-07 CN CN201811127020.XA patent/CN109037122B/zh active Active
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US10269642B2 (en) | 2019-04-23 |
PH12013000318B1 (en) | 2015-06-01 |
TWI601194B (zh) | 2017-10-01 |
US20180269104A1 (en) | 2018-09-20 |
US10014217B2 (en) | 2018-07-03 |
US20190214301A1 (en) | 2019-07-11 |
CN103811419B (zh) | 2018-11-09 |
DE202013104987U1 (de) | 2013-11-26 |
US20200118878A1 (en) | 2020-04-16 |
CN103811419A (zh) | 2014-05-21 |
TW201738951A (zh) | 2017-11-01 |
TW201916153A (zh) | 2019-04-16 |
US10770350B2 (en) | 2020-09-08 |
TW201421560A (zh) | 2014-06-01 |
KR20210011035A (ko) | 2021-01-29 |
US20150332969A1 (en) | 2015-11-19 |
US9564365B2 (en) | 2017-02-07 |
CN109037122A (zh) | 2018-12-18 |
US20140127880A1 (en) | 2014-05-08 |
CN109037122B (zh) | 2022-03-01 |
US10553491B2 (en) | 2020-02-04 |
TWI645466B (zh) | 2018-12-21 |
KR20140059140A (ko) | 2014-05-15 |
US20170103922A1 (en) | 2017-04-13 |
KR102206705B1 (ko) | 2021-01-25 |
US9136173B2 (en) | 2015-09-15 |
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