NL7908660A - Halfgeleidergeheugen. - Google Patents
Halfgeleidergeheugen. Download PDFInfo
- Publication number
- NL7908660A NL7908660A NL7908660A NL7908660A NL7908660A NL 7908660 A NL7908660 A NL 7908660A NL 7908660 A NL7908660 A NL 7908660A NL 7908660 A NL7908660 A NL 7908660A NL 7908660 A NL7908660 A NL 7908660A
- Authority
- NL
- Netherlands
- Prior art keywords
- region
- floating gate
- area
- transistor
- base
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 230000015654 memory Effects 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 32
- 238000002347 injection Methods 0.000 claims description 18
- 239000007924 injection Substances 0.000 claims description 18
- 230000007704 transition Effects 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 102100038851 Uroplakin-2 Human genes 0.000 claims 1
- 101710173761 Uroplakin-2 Proteins 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000006187 pill Substances 0.000 claims 1
- 108090000623 proteins and genes Proteins 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 26
- 239000012535 impurity Substances 0.000 description 22
- 238000010586 diagram Methods 0.000 description 14
- 239000000969 carrier Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- LXVKDQQAKAPLOW-UHFFFAOYSA-N 2-[4-(1-amino-2-methylbutyl)triazol-1-yl]-1-[4-[4-[4-[2-[4-(1-amino-2-methylbutyl)triazol-1-yl]-3-(4-hydroxyphenyl)propanoyl]piperazin-1-yl]-6-[2-[2-(2-prop-2-ynoxyethoxy)ethoxy]ethylamino]-1,3,5-triazin-2-yl]piperazin-1-yl]-3-(4-hydroxyphenyl)propan-1-on Chemical compound Cl.N1=NC(C(N)C(C)CC)=CN1C(C(=O)N1CCN(CC1)C=1N=C(N=C(NCCOCCOCCOCC#C)N=1)N1CCN(CC1)C(=O)C(CC=1C=CC(O)=CC=1)N1N=NC(=C1)C(N)C(C)CC)CC1=CC=C(O)C=C1 LXVKDQQAKAPLOW-UHFFFAOYSA-N 0.000 description 1
- 102100039981 Hairy and enhancer of split-related protein HELT Human genes 0.000 description 1
- 101001034987 Homo sapiens Hairy and enhancer of split-related protein HELT Proteins 0.000 description 1
- 101100136650 Mus musculus Pigo gene Proteins 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 235000015110 jellies Nutrition 0.000 description 1
- 239000008274 jelly Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1022—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14648678A JPS5574179A (en) | 1978-11-29 | 1978-11-29 | Semiconductor non-volatile memory |
| JP14648678 | 1978-11-29 | ||
| JP14648778 | 1978-11-29 | ||
| JP14648778A JPS5574180A (en) | 1978-11-29 | 1978-11-29 | Non-volatile memory |
| JP1908679U JPS55122299U (de) | 1979-02-19 | 1979-02-19 | |
| JP1908679 | 1979-02-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7908660A true NL7908660A (nl) | 1980-06-02 |
Family
ID=27282490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7908660A NL7908660A (nl) | 1978-11-29 | 1979-11-29 | Halfgeleidergeheugen. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4429326A (de) |
| CA (1) | CA1128660A (de) |
| DE (1) | DE2947920C2 (de) |
| GB (1) | GB2037076B (de) |
| NL (1) | NL7908660A (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4706107A (en) * | 1981-06-04 | 1987-11-10 | Nippon Electric Co., Ltd. | IC memory cells with reduced alpha particle influence |
| JPS5851561A (ja) * | 1981-09-24 | 1983-03-26 | Hitachi Ltd | 半導体集積回路装置 |
| US5541875A (en) * | 1994-07-01 | 1996-07-30 | Advanced Micro Devices, Inc. | High energy buried layer implant to provide a low resistance p-well in a flash EPROM array |
| KR100241524B1 (ko) * | 1996-12-28 | 2000-02-01 | 김영환 | 플래쉬 메모리 셀 |
| US6091634A (en) * | 1997-04-11 | 2000-07-18 | Programmable Silicon Solutions | Compact nonvolatile memory using substrate hot carrier injection |
| US6717203B2 (en) * | 2002-07-10 | 2004-04-06 | Altera Corporation | Compact nonvolatile memory using substrate hot carrier injection |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3893085A (en) * | 1973-11-28 | 1975-07-01 | Ibm | Read mostly memory cell having bipolar and FAMOS transistor |
| US4112509A (en) * | 1976-12-27 | 1978-09-05 | Texas Instruments Incorporated | Electrically alterable floating gate semiconductor memory device |
-
1979
- 1979-11-21 US US06/096,388 patent/US4429326A/en not_active Expired - Lifetime
- 1979-11-27 GB GB7940890A patent/GB2037076B/en not_active Expired
- 1979-11-28 DE DE2947920A patent/DE2947920C2/de not_active Expired
- 1979-11-29 NL NL7908660A patent/NL7908660A/nl not_active Application Discontinuation
- 1979-11-29 CA CA340,918A patent/CA1128660A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2037076A (en) | 1980-07-02 |
| DE2947920C2 (de) | 1984-01-26 |
| DE2947920A1 (de) | 1980-06-04 |
| CA1128660A (en) | 1982-07-27 |
| US4429326A (en) | 1984-01-31 |
| GB2037076B (en) | 1983-05-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |