NL7507269A - Dunne-laagschakeling. - Google Patents

Dunne-laagschakeling.

Info

Publication number
NL7507269A
NL7507269A NL7507269A NL7507269A NL7507269A NL 7507269 A NL7507269 A NL 7507269A NL 7507269 A NL7507269 A NL 7507269A NL 7507269 A NL7507269 A NL 7507269A NL 7507269 A NL7507269 A NL 7507269A
Authority
NL
Netherlands
Prior art keywords
thin layer
layer circuit
circuit
thin
layer
Prior art date
Application number
NL7507269A
Other languages
English (en)
Dutch (nl)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NL7507269A publication Critical patent/NL7507269A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
NL7507269A 1974-06-19 1975-06-18 Dunne-laagschakeling. NL7507269A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2429434A DE2429434B2 (de) 1974-06-19 1974-06-19 Verfahren zur Herstellung von Widerständen und Kondensatoren in Dunnschichtschaltungen

Publications (1)

Publication Number Publication Date
NL7507269A true NL7507269A (nl) 1975-12-23

Family

ID=5918410

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7507269A NL7507269A (nl) 1974-06-19 1975-06-18 Dunne-laagschakeling.

Country Status (7)

Country Link
US (1) US4020222A (forum.php)
AT (1) ATA326275A (forum.php)
CH (1) CH587568A5 (forum.php)
DE (1) DE2429434B2 (forum.php)
FR (1) FR2275889A1 (forum.php)
GB (1) GB1482300A (forum.php)
NL (1) NL7507269A (forum.php)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2546675C3 (de) * 1975-10-17 1979-08-02 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer Dünnschichtschaltung
JPS608426Y2 (ja) * 1976-12-08 1985-03-25 シャープ株式会社 半導体ウエハ−の保持基板
US4226932A (en) * 1979-07-05 1980-10-07 Gte Automatic Electric Laboratories Incorporated Titanium nitride as one layer of a multi-layered coating intended to be etched
JPS59185801U (ja) * 1983-05-26 1984-12-10 アルプス電気株式会社 チツプ抵抗
US4910516A (en) * 1987-03-25 1990-03-20 Texas Instruments Incorporated Integrated dual-slope analog to digital converter with R/C variance compensation
US4849757A (en) * 1987-03-25 1989-07-18 Texas Instruments Incorporated Integrated dual-slope analog to digital converter with r/c variance compensation
US4878770A (en) * 1987-09-09 1989-11-07 Analog Devices, Inc. IC chips with self-aligned thin film resistors
US5367179A (en) * 1990-04-25 1994-11-22 Casio Computer Co., Ltd. Thin-film transistor having electrodes made of aluminum, and an active matrix panel using same
JPH05152111A (ja) * 1991-11-28 1993-06-18 Rohm Co Ltd チツプ型複合部品
US5675310A (en) * 1994-12-05 1997-10-07 General Electric Company Thin film resistors on organic surfaces
US5683928A (en) * 1994-12-05 1997-11-04 General Electric Company Method for fabricating a thin film resistor
US5598131A (en) * 1995-11-16 1997-01-28 Emc Technology, Inc. AC coupled termination
US5872696A (en) * 1997-04-09 1999-02-16 Fujitsu Limited Sputtered and anodized capacitors capable of withstanding exposure to high temperatures
US6040226A (en) * 1997-05-27 2000-03-21 General Electric Company Method for fabricating a thin film inductor
US6342681B1 (en) 1997-10-15 2002-01-29 Avx Corporation Surface mount coupler device
US6348139B1 (en) * 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6878250B1 (en) * 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US6331233B1 (en) * 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US7517417B2 (en) * 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US6365480B1 (en) * 2000-11-27 2002-04-02 Analog Devices, Inc. IC resistor and capacitor fabrication method
US6933186B2 (en) * 2001-09-21 2005-08-23 International Business Machines Corporation Method for BEOL resistor tolerance improvement using anodic oxidation
US7001841B2 (en) * 2002-08-26 2006-02-21 Matsushita Electric Industrial Co., Ltd. Production method of semiconductor device
US7667565B2 (en) * 2004-09-08 2010-02-23 Cyntec Co., Ltd. Current measurement using inductor coil with compact configuration and low TCR alloys
US7915993B2 (en) * 2004-09-08 2011-03-29 Cyntec Co., Ltd. Inductor
US20070084527A1 (en) * 2005-10-19 2007-04-19 Stephane Ferrasse High-strength mechanical and structural components, and methods of making high-strength components
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
US8853819B2 (en) 2011-01-07 2014-10-07 Advanced Semiconductor Engineering, Inc. Semiconductor structure with passive element network and manufacturing method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3489656A (en) * 1964-11-09 1970-01-13 Western Electric Co Method of producing an integrated circuit containing multilayer tantalum compounds
US3627577A (en) * 1968-05-22 1971-12-14 Bell Telephone Labor Inc Thin film resistors
US3737343A (en) * 1971-04-19 1973-06-05 Bell Telephone Labor Inc Technique for the preparation of ion implanted tantalum-aluminum alloy
US3738919A (en) * 1972-04-13 1973-06-12 Bell Telephone Labor Inc Technique for adjusting temperature coefficient of resistance of tantalum aluminum alloy films

Also Published As

Publication number Publication date
DE2429434B2 (de) 1979-10-04
US4020222A (en) 1977-04-26
ATA326275A (de) 1979-05-15
DE2429434A1 (de) 1976-01-08
CH587568A5 (forum.php) 1977-05-13
FR2275889A1 (fr) 1976-01-16
GB1482300A (en) 1977-08-10

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Legal Events

Date Code Title Description
BV The patent application has lapsed