NL7105648A - - Google Patents

Info

Publication number
NL7105648A
NL7105648A NL7105648A NL7105648A NL7105648A NL 7105648 A NL7105648 A NL 7105648A NL 7105648 A NL7105648 A NL 7105648A NL 7105648 A NL7105648 A NL 7105648A NL 7105648 A NL7105648 A NL 7105648A
Authority
NL
Netherlands
Application number
NL7105648A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP45035904A external-priority patent/JPS5032033B1/ja
Priority claimed from JP45080325A external-priority patent/JPS5029315B1/ja
Application filed filed Critical
Publication of NL7105648A publication Critical patent/NL7105648A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30617—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
NL7105648A 1970-04-28 1971-04-27 NL7105648A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP45035904A JPS5032033B1 (en) 1970-04-28 1970-04-28
JP45080325A JPS5029315B1 (en) 1970-09-14 1970-09-14

Publications (1)

Publication Number Publication Date
NL7105648A true NL7105648A (en) 1971-11-01

Family

ID=26374916

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7105648A NL7105648A (en) 1970-04-28 1971-04-27

Country Status (4)

Country Link
US (1) US3813585A (en)
DE (1) DE2120388A1 (en)
GB (1) GB1347874A (en)
NL (1) NL7105648A (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969632A (en) * 1971-07-06 1976-07-13 Thomson-Csf Logic circuits-employing junction-type field-effect transistors
CA1049127A (en) 1974-03-05 1979-02-20 Kunio Itoh Semiconductor devices with improved heat radiation and current concentration
US3906541A (en) * 1974-03-29 1975-09-16 Gen Electric Field effect transistor devices and methods of making same
US3953879A (en) * 1974-07-12 1976-04-27 Massachusetts Institute Of Technology Current-limiting field effect device
US4092660A (en) * 1974-09-16 1978-05-30 Texas Instruments Incorporated High power field effect transistor
US3951708A (en) * 1974-10-15 1976-04-20 Rca Corporation Method of manufacturing a semiconductor device
JPS5342679B2 (en) * 1975-01-08 1978-11-14
US3998674A (en) * 1975-11-24 1976-12-21 International Business Machines Corporation Method for forming recessed regions of thermally oxidized silicon and structures thereof utilizing anisotropic etching
US4104672A (en) * 1976-10-29 1978-08-01 Bell Telephone Laboratories, Incorporated High power gallium arsenide schottky barrier field effect transistor
US4141021A (en) * 1977-02-14 1979-02-20 Varian Associates, Inc. Field effect transistor having source and gate electrodes on opposite faces of active layer
US4099305A (en) * 1977-03-14 1978-07-11 Bell Telephone Laboratories, Incorporated Fabrication of mesa devices by MBE growth over channeled substrates
US4237473A (en) * 1978-12-22 1980-12-02 Honeywell Inc. Gallium phosphide JFET
FR2449369A1 (en) * 1979-02-13 1980-09-12 Thomson Csf LOGIC CIRCUIT COMPRISING A SATURABLE RESISTANCE
US4178197A (en) * 1979-03-05 1979-12-11 International Business Machines Corporation Formation of epitaxial tunnels utilizing oriented growth techniques
US4210470A (en) * 1979-03-05 1980-07-01 International Business Machines Corporation Epitaxial tunnels from intersecting growth planes
US4227942A (en) * 1979-04-23 1980-10-14 General Electric Company Photovoltaic semiconductor devices and methods of making same
US4389429A (en) * 1980-06-16 1983-06-21 Rockwell International Corporation Method of forming integrated circuit chip transmission line
US4379307A (en) * 1980-06-16 1983-04-05 Rockwell International Corporation Integrated circuit chip transmission line
EP0059796A1 (en) * 1981-03-02 1982-09-15 Rockwell International Corporation NPN lateral transistor isolated from a substrate by orientation-dependent etching, and method of making it
US4497685A (en) * 1981-05-08 1985-02-05 Rockwell International Corporation Small area high value resistor with greatly reduced parasitic capacitance
US4506283A (en) * 1981-05-08 1985-03-19 Rockwell International Corporation Small area high value resistor with greatly reduced parasitic capacitance
US4522682A (en) * 1982-06-21 1985-06-11 Rockwell International Corporation Method for producing PNP type lateral transistor separated from substrate by O.D.E. for minimal interference therefrom
US5049971A (en) * 1983-10-21 1991-09-17 Hughes Aircraft Company Monolithic high-frequency-signal switch and power limiter device
JPS61171136A (en) * 1985-01-25 1986-08-01 Toshiba Corp Mesa etching method for semiconductor crystal
DE3509963A1 (en) * 1985-03-20 1986-09-25 Standard Elektrik Lorenz Ag, 7000 Stuttgart JUNCTION FIELD EFFECT TRANSISTOR WITH SELF-ADJUSTING GATE
US4879587A (en) * 1986-11-13 1989-11-07 Transensory Devices, Inc. Apparatus and method for forming fusible links
US4774555A (en) * 1987-08-07 1988-09-27 Siemens Corporate Research And Support, Inc. Power hemt structure
KR970000538B1 (en) * 1993-04-27 1997-01-13 엘지전자 주식회사 Method for manufacturing a field effect transistor having gate recess structure
TW307948B (en) * 1995-08-29 1997-06-11 Matsushita Electron Co Ltd
US8071457B2 (en) * 2010-01-07 2011-12-06 Globalfoundries Inc. Low capacitance precision resistor
US10134839B2 (en) * 2015-05-08 2018-11-20 Raytheon Company Field effect transistor structure having notched mesa

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3457633A (en) * 1962-12-31 1969-07-29 Ibm Method of making crystal shapes having optically related surfaces
NL143070B (en) * 1964-04-21 1974-08-15 Philips Nv PROCESS FOR APPLYING SIDE OF EACH OTHER, BY AN INTERMEDIATE SPACE OF SEPARATE METAL PARTS ON A SUBSTRATE AND OBJECT, IN PARTICULAR SEMI-CONDUCTOR DEVICE, MANUFACTURED IN APPLICATION OF THIS PROCESS.
DE1439711A1 (en) * 1964-08-04 1968-11-28 Telefunken Patent Semiconductor device with low shunt capacitance
US3363153A (en) * 1965-06-01 1968-01-09 Gen Telephone & Elect Solid state triode having gate electrode therein subtending a portion of the source electrode
DE1514673A1 (en) * 1966-01-26 1969-06-19 Siemens Ag Method of manufacturing a transistor
US3493820A (en) * 1966-12-01 1970-02-03 Raytheon Co Airgap isolated semiconductor device
CH461646A (en) * 1967-04-18 1968-08-31 Ibm Field-effect transistor and process for its manufacture
US3528168A (en) * 1967-09-26 1970-09-15 Texas Instruments Inc Method of making a semiconductor device
US3607448A (en) * 1968-10-21 1971-09-21 Hughes Aircraft Co Chemical milling of silicon carbide
US3699408A (en) * 1970-01-23 1972-10-17 Nippon Electric Co Gallium-arsenide schottky barrier type semiconductor device
US3678573A (en) * 1970-03-10 1972-07-25 Westinghouse Electric Corp Self-aligned gate field effect transistor and method of preparing
US3675313A (en) * 1970-10-01 1972-07-11 Westinghouse Electric Corp Process for producing self aligned gate field effect transistor

Also Published As

Publication number Publication date
GB1347874A (en) 1974-02-27
US3813585A (en) 1974-05-28
DE2120388A1 (en) 1971-12-16

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Legal Events

Date Code Title Description
BV The patent application has lapsed