NL6610901A - - Google Patents

Info

Publication number
NL6610901A
NL6610901A NL6610901A NL6610901A NL6610901A NL 6610901 A NL6610901 A NL 6610901A NL 6610901 A NL6610901 A NL 6610901A NL 6610901 A NL6610901 A NL 6610901A NL 6610901 A NL6610901 A NL 6610901A
Authority
NL
Netherlands
Application number
NL6610901A
Other versions
NL150948B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6610901A publication Critical patent/NL6610901A/xx
Publication of NL150948B publication Critical patent/NL150948B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/035Diffusion through a layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/062Gold diffusion
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/904Charge carrier lifetime control
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/919Compensation doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
NL666610901A 1965-08-18 1966-08-03 Werkwijze ter vervaardiging van een halfgeleiderdiode en halfgeleiderdiode vervaardigd volgens deze werkwijze. NL150948B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48055365A 1965-08-18 1965-08-18

Publications (2)

Publication Number Publication Date
NL6610901A true NL6610901A (US08066781-20111129-C00013.png) 1967-02-20
NL150948B NL150948B (nl) 1976-09-15

Family

ID=23908409

Family Applications (1)

Application Number Title Priority Date Filing Date
NL666610901A NL150948B (nl) 1965-08-18 1966-08-03 Werkwijze ter vervaardiging van een halfgeleiderdiode en halfgeleiderdiode vervaardigd volgens deze werkwijze.

Country Status (7)

Country Link
US (1) US3473093A (US08066781-20111129-C00013.png)
JP (1) JPS534396B1 (US08066781-20111129-C00013.png)
CH (1) CH449782A (US08066781-20111129-C00013.png)
DE (1) DE1564170C3 (US08066781-20111129-C00013.png)
FR (1) FR1489272A (US08066781-20111129-C00013.png)
GB (1) GB1150934A (US08066781-20111129-C00013.png)
NL (1) NL150948B (US08066781-20111129-C00013.png)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638081A (en) * 1968-08-13 1972-01-25 Ibm Integrated circuit having lightly doped expitaxial collector layer surrounding base and emitter elements and heavily doped buried collector larger in contact with the base element
US3582725A (en) * 1969-08-21 1971-06-01 Nippon Electric Co Semiconductor integrated circuit device and the method of manufacturing the same
JPS4975289A (US08066781-20111129-C00013.png) * 1972-11-24 1974-07-19
US3921199A (en) * 1973-07-31 1975-11-18 Texas Instruments Inc Junction breakdown voltage by means of ion implanted compensation guard ring
US3899372A (en) * 1973-10-31 1975-08-12 Ibm Process for controlling insulating film thickness across a semiconductor wafer
JPS60120805U (ja) * 1984-01-26 1985-08-15 三浪工業株式会社 木工機用自動送り装置
KR960008558B1 (en) * 1993-03-02 1996-06-28 Samsung Electronics Co Ltd Low resistance contact structure and manufacturing method of high integrated semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3007090A (en) * 1957-09-04 1961-10-31 Ibm Back resistance control for junction semiconductor devices
US2992471A (en) * 1958-11-04 1961-07-18 Bell Telephone Labor Inc Formation of p-n junctions in p-type semiconductors
US2956913A (en) * 1958-11-20 1960-10-18 Texas Instruments Inc Transistor and method of making same
US3248614A (en) * 1961-11-15 1966-04-26 Ibm Formation of small area junction devices
NL297002A (US08066781-20111129-C00013.png) * 1962-08-23 1900-01-01
FR1372069A (fr) * 1962-08-23 1964-09-11 Motorola Inc Procédé pour la fabrication des diodes redresseuses et des diodes zener
US3271201A (en) * 1962-10-30 1966-09-06 Itt Planar semiconductor devices
US3307984A (en) * 1962-12-07 1967-03-07 Trw Semiconductors Inc Method of forming diode with high resistance substrate
GB1054450A (US08066781-20111129-C00013.png) * 1963-09-26 1900-01-01
US3312881A (en) * 1963-11-08 1967-04-04 Ibm Transistor with limited area basecollector junction

Also Published As

Publication number Publication date
DE1564170A1 (de) 1970-10-15
FR1489272A (fr) 1967-07-21
CH449782A (de) 1968-01-15
DE1564170B2 (de) 1971-03-25
GB1150934A (en) 1969-05-07
DE1564170C3 (de) 1975-03-06
JPS534396B1 (US08066781-20111129-C00013.png) 1978-02-16
NL150948B (nl) 1976-09-15
US3473093A (en) 1969-10-14

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