NL6502529A - - Google Patents

Info

Publication number
NL6502529A
NL6502529A NL6502529A NL6502529A NL6502529A NL 6502529 A NL6502529 A NL 6502529A NL 6502529 A NL6502529 A NL 6502529A NL 6502529 A NL6502529 A NL 6502529A NL 6502529 A NL6502529 A NL 6502529A
Authority
NL
Netherlands
Application number
NL6502529A
Other versions
NL146720B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB1143788D priority Critical patent/GB1143788A/en
Application filed filed Critical
Priority to NL656502529A priority patent/NL146720B/xx
Priority to DE1519844A priority patent/DE1519844C3/de
Priority to AT172966A priority patent/AT269074B/de
Priority to CH266466A priority patent/CH499991A/de
Priority to FR51348A priority patent/FR1470189A/fr
Priority to BE677151D priority patent/BE677151A/xx
Publication of NL6502529A publication Critical patent/NL6502529A/xx
Priority to US00145876A priority patent/US3840652A/en
Publication of NL146720B publication Critical patent/NL146720B/xx

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D9/00Crystallisation
    • B01D9/004Fractional crystallisation; Fractionating or rectifying columns
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • C01B19/007Tellurides or selenides of metals
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/06Hydrogen phosphides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00Compounds of antimony
    • C01G30/002Compounds containing, besides antimony, two or more other elements, with the exception of oxygen or hydrogen
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00Compounds of antimony
    • C01G30/008Sulfides
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/007Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/047Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/46Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/852Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/42Magnetic properties
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/80Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
NL656502529A 1965-02-27 1965-02-27 Werkwijze voor het insluitselvrij maken van kristallen en voorwerp, verkregen onder toepassing van de werkwijze. NL146720B (nl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
GB1143788D GB1143788A (US20020128544A1-20020912-P00008.png) 1965-02-27
NL656502529A NL146720B (nl) 1965-02-27 1965-02-27 Werkwijze voor het insluitselvrij maken van kristallen en voorwerp, verkregen onder toepassing van de werkwijze.
DE1519844A DE1519844C3 (de) 1965-02-27 1966-02-23 Verfahren zum Beseitigen von Einschlüssen aus Kristallen
AT172966A AT269074B (de) 1965-02-27 1966-02-24 Verfahren zum Herstellen physikalisch reiner Kristalle einer Verbindung
CH266466A CH499991A (de) 1965-02-27 1966-02-24 Verfahren zum Herstellen von Kristallen einer aus mindestens zwei Komponenten bestehenden Verbindung
FR51348A FR1470189A (fr) 1965-02-27 1966-02-28 Procédé d'élaboration de cristaux, physiquement purs, d'un corps composé
BE677151D BE677151A (US20020128544A1-20020912-P00008.png) 1965-02-27 1966-02-28
US00145876A US3840652A (en) 1965-02-27 1971-05-21 Method of removing foreign phases from the crystals of a compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL656502529A NL146720B (nl) 1965-02-27 1965-02-27 Werkwijze voor het insluitselvrij maken van kristallen en voorwerp, verkregen onder toepassing van de werkwijze.

Publications (2)

Publication Number Publication Date
NL6502529A true NL6502529A (US20020128544A1-20020912-P00008.png) 1966-08-29
NL146720B NL146720B (nl) 1975-08-15

Family

ID=19792513

Family Applications (1)

Application Number Title Priority Date Filing Date
NL656502529A NL146720B (nl) 1965-02-27 1965-02-27 Werkwijze voor het insluitselvrij maken van kristallen en voorwerp, verkregen onder toepassing van de werkwijze.

Country Status (6)

Country Link
AT (1) AT269074B (US20020128544A1-20020912-P00008.png)
BE (1) BE677151A (US20020128544A1-20020912-P00008.png)
CH (1) CH499991A (US20020128544A1-20020912-P00008.png)
DE (1) DE1519844C3 (US20020128544A1-20020912-P00008.png)
GB (1) GB1143788A (US20020128544A1-20020912-P00008.png)
NL (1) NL146720B (US20020128544A1-20020912-P00008.png)

Also Published As

Publication number Publication date
AT269074B (de) 1969-03-10
DE1519844C3 (de) 1974-05-02
NL146720B (nl) 1975-08-15
DE1519844B2 (de) 1973-10-04
GB1143788A (US20020128544A1-20020912-P00008.png) 1900-01-01
DE1519844A1 (de) 1969-02-13
BE677151A (US20020128544A1-20020912-P00008.png) 1966-08-01
CH499991A (de) 1970-12-15

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