NL190770C - Inrichting voor het produceren van een siliciumoxidelaag op halfgeleiderplaatjes. - Google Patents
Inrichting voor het produceren van een siliciumoxidelaag op halfgeleiderplaatjes.Info
- Publication number
- NL190770C NL190770C NL7802619A NL7802619A NL190770C NL 190770 C NL190770 C NL 190770C NL 7802619 A NL7802619 A NL 7802619A NL 7802619 A NL7802619 A NL 7802619A NL 190770 C NL190770 C NL 190770C
- Authority
- NL
- Netherlands
- Prior art keywords
- producing
- silicon oxide
- oxide layer
- semiconductor wafers
- wafers
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052814 silicon oxide Inorganic materials 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/775,963 US4167915A (en) | 1977-03-09 | 1977-03-09 | High-pressure, high-temperature gaseous chemical apparatus |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7802619A NL7802619A (nl) | 1978-09-12 |
NL190770B NL190770B (nl) | 1994-03-01 |
NL190770C true NL190770C (nl) | 1994-08-01 |
Family
ID=25106067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7802619A NL190770C (nl) | 1977-03-09 | 1978-03-09 | Inrichting voor het produceren van een siliciumoxidelaag op halfgeleiderplaatjes. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4167915A (de) |
JP (1) | JPS53112064A (de) |
DE (1) | DE2810492A1 (de) |
FR (1) | FR2382931A1 (de) |
GB (1) | GB1597192A (de) |
NL (1) | NL190770C (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4268538A (en) * | 1977-03-09 | 1981-05-19 | Atomel Corporation | High-pressure, high-temperature gaseous chemical method for silicon oxidation |
US4275094A (en) * | 1977-10-31 | 1981-06-23 | Fujitsu Limited | Process for high pressure oxidation of silicon |
JPS5923412Y2 (ja) * | 1979-03-08 | 1984-07-12 | テルサ−ムコ株式会社 | 半導体熱処理装置用キヤツプ装着装置 |
US4278705A (en) * | 1979-11-08 | 1981-07-14 | Bell Telephone Laboratories, Incorporated | Sequentially annealed oxidation of silicon to fill trenches with silicon dioxide |
US4253417A (en) * | 1980-02-21 | 1981-03-03 | Thermco Products Corporation | Closure for thermal reactor |
US4315479A (en) * | 1980-06-27 | 1982-02-16 | Atomel Corporation | Silicon wafer steam oxidizing apparatus |
FR2488443A1 (fr) * | 1980-08-11 | 1982-02-12 | Western Electric Co | Procede et dispositif d'oxydation de tranches de silicium |
JPS5772318A (en) * | 1980-10-24 | 1982-05-06 | Seiko Epson Corp | Vapor growth method |
US4351805A (en) * | 1981-04-06 | 1982-09-28 | International Business Machines Corporation | Single gas flow elevated pressure reactor |
US4488506A (en) * | 1981-06-18 | 1984-12-18 | Itt Industries, Inc. | Metallization plant |
US4376796A (en) * | 1981-10-27 | 1983-03-15 | Thermco Products Corporation | Processing silicon wafers employing processing gas atmospheres of similar molecular weight |
US4420503A (en) * | 1982-05-17 | 1983-12-13 | Rca Corporation | Low temperature elevated pressure glass flow/re-flow process |
JPS5977289A (ja) * | 1982-10-26 | 1984-05-02 | ウシオ電機株式会社 | 光照射炉 |
JPS5982731A (ja) * | 1982-11-04 | 1984-05-12 | Toshiba Corp | ウエハ水蒸気酸化装置 |
US4518623A (en) * | 1982-11-24 | 1985-05-21 | Riley Thomas J | Polymeric film coating method with continuous deposition pressure control |
US4495889A (en) * | 1982-11-24 | 1985-01-29 | Riley Thomas J | Polymeric film coating apparatus |
US4584205A (en) * | 1984-07-02 | 1986-04-22 | Signetics Corporation | Method for growing an oxide layer on a silicon surface |
US4619844A (en) * | 1985-01-22 | 1986-10-28 | Fairchild Camera Instrument Corp. | Method and apparatus for low pressure chemical vapor deposition |
CA1251100A (en) * | 1985-05-17 | 1989-03-14 | Richard Cloutier | Chemical vapor deposition |
DE3539981C1 (de) * | 1985-11-11 | 1987-06-11 | Telog Systems Gmbh | Verfahren und Vorrichtung zur Behandlung von Halbleitermaterialien |
JPS6317381A (ja) * | 1986-07-09 | 1988-01-25 | 東邦レーヨン株式会社 | 炭素化炉 |
US5234501A (en) * | 1987-09-01 | 1993-08-10 | Tokyo Electron Sagami Limited | Oxidation metod |
US4854863A (en) * | 1987-12-02 | 1989-08-08 | Gas Research Institute | Convective heat transfer within an industrial heat treating furnace |
US4854860A (en) * | 1987-12-02 | 1989-08-08 | Gas Research Institute | Convective heat transfer within an industrial heat treating furnace |
US4789333A (en) * | 1987-12-02 | 1988-12-06 | Gas Research Institute | Convective heat transfer within an industrial heat treating furnace |
USRE36328E (en) * | 1988-03-31 | 1999-10-05 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing apparatus including temperature control mechanism |
US4914276A (en) * | 1988-05-12 | 1990-04-03 | Princeton Scientific Enterprises, Inc. | Efficient high temperature radiant furnace |
US5167717A (en) * | 1989-02-15 | 1992-12-01 | Charles Boitnott | Apparatus and method for processing a semiconductor wafer |
US5123994A (en) * | 1989-05-30 | 1992-06-23 | Motorola, Inc. | Ramped oxide formation method |
US5167716A (en) * | 1990-09-28 | 1992-12-01 | Gasonics, Inc. | Method and apparatus for batch processing a semiconductor wafer |
US5451258A (en) * | 1994-05-11 | 1995-09-19 | Materials Research Corporation | Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber |
JP3270852B2 (ja) * | 1995-04-20 | 2002-04-02 | 東京エレクトロン株式会社 | 圧力調整装置及びこれを用いた部屋の連通方法 |
JP2867946B2 (ja) * | 1996-03-13 | 1999-03-10 | 日本電気株式会社 | 気相成長装置 |
US5846888A (en) * | 1996-09-27 | 1998-12-08 | Micron Technology, Inc. | Method for in-situ incorporation of desirable impurities into high pressure oxides |
US6037273A (en) * | 1997-07-11 | 2000-03-14 | Applied Materials, Inc. | Method and apparatus for insitu vapor generation |
US6136703A (en) * | 1998-09-03 | 2000-10-24 | Micron Technology, Inc. | Methods for forming phosphorus- and/or boron-containing silica layers on substrates |
US6331212B1 (en) * | 2000-04-17 | 2001-12-18 | Avansys, Llc | Methods and apparatus for thermally processing wafers |
FI118805B (fi) * | 2000-05-15 | 2008-03-31 | Asm Int | Menetelmä ja kokoonpano kaasufaasireaktantin syöttämiseksi reaktiokammioon |
AU2003299763B2 (en) * | 2002-12-26 | 2009-01-22 | Baker Hughes Incorporated | Alternative packer setting method |
US20050175519A1 (en) * | 2004-02-06 | 2005-08-11 | Rogers William A.Jr. | Microchannel compression reactor |
US20070187386A1 (en) * | 2006-02-10 | 2007-08-16 | Poongsan Microtec Corporation | Methods and apparatuses for high pressure gas annealing |
US20120269710A1 (en) * | 2011-04-25 | 2012-10-25 | Chunlong Li | Thermal oxidation system and method for preventing water from accumulation |
US10224224B2 (en) * | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
US10179941B1 (en) * | 2017-07-14 | 2019-01-15 | Applied Materials, Inc. | Gas delivery system for high pressure processing chamber |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL285088A (de) * | 1961-11-18 | |||
GB1081629A (en) * | 1965-08-26 | 1967-08-31 | Associated Semiconductor Mft | Improvements in or relating to silicon bodies |
US3446659A (en) * | 1966-09-16 | 1969-05-27 | Texas Instruments Inc | Apparatus and process for growing noncontaminated thermal oxide on silicon |
US3647535A (en) * | 1969-10-27 | 1972-03-07 | Ncr Co | Method of controllably oxidizing a silicon wafer |
US3865647A (en) * | 1970-09-30 | 1975-02-11 | Siemens Ag | Method for precipitation of semiconductor material |
US3907981A (en) * | 1973-03-12 | 1975-09-23 | Rockwell International Corp | Method for recombining hydrogen and oxygen |
US4018183A (en) * | 1973-11-15 | 1977-04-19 | U.S. Philips Corporation | Apparatus for treating a plurality of semiconductor slices to a reacting gas current |
JPS5337188B2 (de) * | 1974-02-15 | 1978-10-06 | ||
US4018184A (en) * | 1975-07-28 | 1977-04-19 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for treatment of semiconductor wafer |
-
1977
- 1977-03-09 US US05/775,963 patent/US4167915A/en not_active Expired - Lifetime
-
1978
- 1978-03-02 GB GB8277/78A patent/GB1597192A/en not_active Expired
- 1978-03-03 JP JP2369978A patent/JPS53112064A/ja active Pending
- 1978-03-08 FR FR7806663A patent/FR2382931A1/fr active Granted
- 1978-03-09 DE DE19782810492 patent/DE2810492A1/de active Granted
- 1978-03-09 NL NL7802619A patent/NL190770C/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
NL7802619A (nl) | 1978-09-12 |
DE2810492C2 (de) | 1987-07-02 |
US4167915A (en) | 1979-09-18 |
FR2382931A1 (fr) | 1978-10-06 |
FR2382931B1 (de) | 1985-02-08 |
NL190770B (nl) | 1994-03-01 |
GB1597192A (en) | 1981-09-03 |
JPS53112064A (en) | 1978-09-30 |
DE2810492A1 (de) | 1978-09-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A85 | Still pending on 85-01-01 | ||
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
DNT | Communications of changes of names of applicants whose applications have been laid open to public inspection |
Free format text: ATOMEL PRODUCTS CORPORATION |
|
DNT | Communications of changes of names of applicants whose applications have been laid open to public inspection |
Free format text: GASONICS, INC. |
|
V4 | Discontinued because of reaching the maximum lifetime of a patent |
Free format text: 980309 |