NL162251C - BIDIRECTIONAL SWITCHING DEVICE. - Google Patents

BIDIRECTIONAL SWITCHING DEVICE.

Info

Publication number
NL162251C
NL162251C NL6811845.A NL6811845A NL162251C NL 162251 C NL162251 C NL 162251C NL 6811845 A NL6811845 A NL 6811845A NL 162251 C NL162251 C NL 162251C
Authority
NL
Netherlands
Prior art keywords
bidirectional switching
bidirectional
switching
Prior art date
Application number
NL6811845.A
Other languages
Dutch (nl)
Other versions
NL6811845A (en
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to CA845885T priority Critical
Priority to US66195467A priority
Application filed by Rca Corp filed Critical Rca Corp
Publication of NL6811845A publication Critical patent/NL6811845A/xx
Application granted granted Critical
Publication of NL162251C publication Critical patent/NL162251C/en

Links

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K4/00Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/83Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
NL6811845.A 1967-08-21 1968-08-20 BIDIRECTIONAL SWITCHING DEVICE. NL162251C (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CA845885T
US66195467A true 1967-08-21 1967-08-21

Publications (2)

Publication Number Publication Date
NL6811845A NL6811845A (en) 1969-02-25
NL162251C true NL162251C (en) 1980-04-15

Family

ID=74124947

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6811845.A NL162251C (en) 1967-08-21 1968-08-20 BIDIRECTIONAL SWITCHING DEVICE.

Country Status (7)

Country Link
JP (1) JPS4743875B1 (en)
CA (1) CA845885A (en)
DE (1) DE1764791B2 (en)
FR (1) FR1578448A (en)
GB (1) GB1234294A (en)
MY (1) MY7300382A (en)
NL (1) NL162251C (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
JPS5019437B1 (en) * 1970-06-08 1975-07-07
DE2214187C3 (en) * 1972-03-23 1978-05-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen
JPS4918279A (en) * 1972-06-08 1974-02-18
JPS5541029B2 (en) * 1972-10-30 1980-10-21
JPS4974486A (en) * 1972-11-17 1974-07-18
JPS5314917B1 (en) * 1975-06-13 1978-05-20
JPS5297684A (en) * 1976-02-12 1977-08-16 Mitsubishi Electric Corp Semiconductor element
IT1072135B (en) * 1976-12-07 1985-04-10 Indesit Semiconductor device for horizontal deflection
JPS5427887Y2 (en) * 1978-03-29 1979-09-08
JPS5547066Y2 (en) * 1978-05-16 1980-11-05
CN109698234B (en) * 2017-10-23 2021-05-11 株洲中车时代半导体有限公司 Thyristor and manufacturing method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3099591A (en) * 1958-12-15 1963-07-30 Shockley William Semiconductive device

Also Published As

Publication number Publication date
DE1764791A1 (en) 1972-04-06
JPS4743875B1 (en) 1972-11-06
FR1578448A (en) 1969-08-14
MY7300382A (en) 1973-12-31
NL6811845A (en) 1969-02-25
GB1234294A (en) 1971-06-03
CA845885A (en) 1970-06-30
DE1764791B2 (en) 1973-05-10

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee